EP0853818A4 - Low voltage short channel trench dmos transistor - Google Patents
Low voltage short channel trench dmos transistorInfo
- Publication number
- EP0853818A4 EP0853818A4 EP96927387A EP96927387A EP0853818A4 EP 0853818 A4 EP0853818 A4 EP 0853818A4 EP 96927387 A EP96927387 A EP 96927387A EP 96927387 A EP96927387 A EP 96927387A EP 0853818 A4 EP0853818 A4 EP 0853818A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- low voltage
- short channel
- dmos transistor
- channel trench
- trench dmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53715695A | 1995-08-21 | 1995-08-21 | |
US537156 | 1995-08-21 | ||
PCT/US1996/013039 WO1997007548A1 (en) | 1995-08-21 | 1996-08-15 | Low voltage short channel trench dmos transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0853818A1 EP0853818A1 (en) | 1998-07-22 |
EP0853818A4 true EP0853818A4 (en) | 1998-11-11 |
Family
ID=24141458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP96927387A Withdrawn EP0853818A4 (en) | 1995-08-21 | 1996-08-15 | Low voltage short channel trench dmos transistor |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0853818A4 (en) |
AU (1) | AU6722396A (en) |
WO (1) | WO1997007548A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6429481B1 (en) * | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
DE19935442C1 (en) * | 1999-07-28 | 2000-12-21 | Siemens Ag | Power trench-metal oxide semiconductor transistor is produced using a temporary layer to allow formation of a trench insulating film which is thicker at the trench lower end than at the trench upper end |
DE10009345C1 (en) * | 2000-02-28 | 2001-07-19 | Infineon Technologies Ag | Field effect transistor device with trench-shaped gate electrode |
US6312993B1 (en) * | 2000-02-29 | 2001-11-06 | General Semiconductor, Inc. | High speed trench DMOS |
US6921939B2 (en) * | 2000-07-20 | 2005-07-26 | Fairchild Semiconductor Corporation | Power MOSFET and method for forming same using a self-aligned body implant |
JP4813762B2 (en) * | 2003-12-25 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
US8698232B2 (en) | 2010-01-04 | 2014-04-15 | International Rectifier Corporation | Semiconductor device including a voltage controlled termination structure and method for fabricating same |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5674960A (en) * | 1979-11-22 | 1981-06-20 | Toshiba Corp | Semiconductor integrated circuit |
US4369564A (en) * | 1979-10-29 | 1983-01-25 | American Microsystems, Inc. | VMOS Memory cell and method for making same |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US4814839A (en) * | 1977-01-11 | 1989-03-21 | Zaidan Hojin Handotai Kenkyu Shinkokai | Insulated gate static induction transistor and integrated circuit including same |
US5021845A (en) * | 1985-08-30 | 1991-06-04 | Texas Instruments Incorporated | Semiconductor device and process fabrication thereof |
US5298780A (en) * | 1992-02-17 | 1994-03-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating same |
US5385853A (en) * | 1992-12-02 | 1995-01-31 | International Business Machines Corporation | Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET) |
EP0717450A2 (en) * | 1994-12-13 | 1996-06-19 | Mitsubishi Denki Kabushiki Kaisha | Vertiacal insulated gate semiconductor device and method of manufacturing the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL184551C (en) * | 1978-07-24 | 1989-08-16 | Philips Nv | FIELD-EFFECT TRANSISTOR WITH INSULATED HANDLEBAR ELECTRODE. |
US5910669A (en) * | 1992-07-24 | 1999-06-08 | Siliconix Incorporated | Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof |
US5341011A (en) * | 1993-03-15 | 1994-08-23 | Siliconix Incorporated | Short channel trenched DMOS transistor |
-
1996
- 1996-08-15 EP EP96927387A patent/EP0853818A4/en not_active Withdrawn
- 1996-08-15 WO PCT/US1996/013039 patent/WO1997007548A1/en not_active Application Discontinuation
- 1996-08-15 AU AU67223/96A patent/AU6722396A/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4814839A (en) * | 1977-01-11 | 1989-03-21 | Zaidan Hojin Handotai Kenkyu Shinkokai | Insulated gate static induction transistor and integrated circuit including same |
US4369564A (en) * | 1979-10-29 | 1983-01-25 | American Microsystems, Inc. | VMOS Memory cell and method for making same |
JPS5674960A (en) * | 1979-11-22 | 1981-06-20 | Toshiba Corp | Semiconductor integrated circuit |
US5021845A (en) * | 1985-08-30 | 1991-06-04 | Texas Instruments Incorporated | Semiconductor device and process fabrication thereof |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US5298780A (en) * | 1992-02-17 | 1994-03-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of fabricating same |
US5385853A (en) * | 1992-12-02 | 1995-01-31 | International Business Machines Corporation | Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET) |
EP0717450A2 (en) * | 1994-12-13 | 1996-06-19 | Mitsubishi Denki Kabushiki Kaisha | Vertiacal insulated gate semiconductor device and method of manufacturing the same |
Non-Patent Citations (2)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 005, no. 141 (E - 073) 5 September 1981 (1981-09-05) * |
See also references of WO9707548A1 * |
Also Published As
Publication number | Publication date |
---|---|
AU6722396A (en) | 1997-03-12 |
WO1997007548A1 (en) | 1997-02-27 |
EP0853818A1 (en) | 1998-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19980310 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB IT NL |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 19980923 |
|
AK | Designated contracting states |
Kind code of ref document: A4 Designated state(s): DE FR GB IT NL |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
18W | Application withdrawn |
Withdrawal date: 19981216 |