EP0852539A2

EP0852539A2 - Ink-jet printing head and method of manufacturing it

Info

Publication number: EP0852539A2
Application number: EP96944566A
Authority: EP
Inventors: Wolfgang Werner; Thomas Zettler
Original assignee: Siemens AG
Current assignee: Siemens AG
Priority date: 1995-09-29
Filing date: 1996-09-27
Publication date: 1998-07-15
Anticipated expiration: 2016-09-27
Also published as: EP0852539B1; WO1997011849A2; DE19536429A1; JP3065105B2; DE59602566D1; JPH10512205A; WO1997011849A3; US6397467B1; KR19990063906A; US6099106A

Abstract

The proposed ink-jet printing head has a plurality of parallel channels (K; K1; K2;...) which are etched isotropically through apertures (O) in a first layer (6) overlying the channels (K; K1; K2;...). After the etching process, the apertures (O) in the first layer (6) are closed off by the deposition on the first layer (6) of a second layer (7) which covers the apertures (O), the latter having a diameter of, for example, 1 νm. The apertures (O) produced in the first layer (6) by photolithography and subsequent dry etching are arranged in such a way that the desired channels (K; K1; K2;...) beneath the first layer (6) are exposed by the etching process. Advantages: no adjustment-related costs, formation of closed channels without bonding or adhesive techniques, possibility of integrating the trigger circuit and printing head on a single substrate.

Description

Ink jet printhead and method of making such an ink jet printhead

The invention relates to an inkjet printhead with channels arranged parallel to one another within a substrate and separated by partitions, which are provided with a cover plate and at one of their ends each with an outlet opening, and with a thermal or piezoelectric element assigned to each channel, which upon excitation and in the case of ink liquid located within the channel, an ink droplet is ejected from the outlet opening, and a method for producing such an ink jet print head.

Inkjet printheads are used extensively in inkjet printers today. The inkjet print head mostly works according to the known drop-on-demand method, for example, described in DE 30 12 698 C2, in short DoD method.

: aήre: mentioned Here is used to create a dot on a medium to be printed, z. As paper, an ink droplet is ejected from a channel of the ink jet print head as soon as a thermal or piezoelectric element assigned to the channel is driven with a current pulse suitable for this purpose from a control circuit. The suggestion follows z. B. by a current pulse of 2μs to lOμs duration, wherein a thermal energy of about 15 to 50 μ Joule is released. This heating leads to the local evaporation of the ink liquid (formation of bubbles), the liquid column being forced out of the corresponding channel outlet opening without first staining. After the end of the current pulse, the bubble collapses over the thermal element. As a result, part of the liquid column is withdrawn, an ink drop constricting itself outside the channel outlet openings and corresponding to the momentum. attitude moved. This ink droplet creates a black dot on the paper in the case of black ink. The typical emission frequency is around 5 kHz.

To create a character, e.g. B. a letter, the thermal or piezoelectric elements of the parallel adjacent channels must be supplied in a suitable manner by the drive circuit with current pulses so that the points necessary for this letter on the paper are visible by the impact of appropriate ink droplets.

Due to the very small channel diameter and narrow grid spacing between the channels (or nozzles), known processing methods for fine structures are used for the production of ink jet print heads from semiconductor technology. Examples of such processing methods are described in EP 0 359 417 A2, EP 0 434 946 A2 and in the publication IEEE Transactions on Electron Devices, Volume 26, 1979, page 1918. In contrast to the production of integrated semiconductor circuits which are formed on a single substrate, two different substrates are always necessary in the known methods for producing ink jet print heads. Partition walls are formed between channels on a substrate and these are closed with a cover plate which is produced from a second substrate and which is manufactured separately.

In the known methods, heating resistors can be arranged on or in the channel for thermal excitation. The channels are often formed by orientation-dependent etching in a silicon substrate. The heating resistors can be attached to the ducts by bonding. For example, a glass plate can be used as the cover plate be applied by anodic bonding on the channel plate and thus in the first substrate.

As is known from EP 0 443 722 A2, the channels of the ink jet print head can also be formed by adjusting a cover plate provided with partition walls on a first substrate which is provided with heating resistors. Instead of the cover plate provided with partition walls, a flat cover plate can also be glued to the first substrate if the channels mentioned have already been incorporated into the first substrate in the form of channel bottoms and two channel side walls. The glued-on cover plate then forms the duct ceiling for these ducts.

The problem with these known methods for producing integrable inkjet printheads is the mandatory use of two substrates to be joined together. This requires a complicated adjustment, the fine channels having to be protected from contamination when the two substrates are bonded, which means additional effort.

The invention has for its object to provide an ink jet printhead and a method for producing an ink jet printhead, in which a complicated adjustment and gluing or bonding of two separately manufactured substrates is not necessary.

This object is achieved for an ink jet print head of the type mentioned in the introduction in that the cover plate consists of at least two layers, in that a first layer with a plurality of openings lying above the channel is arranged directly on the channel, and in that on the side facing away from the channel Surface of the first layer, a second layer is arranged, which covers the openings. Further developments of the ink jet print head are specified in subclaims 2 to 14.

A method for producing such an inkjet printhead has the following method steps:

Providing a substrate which determines the height of the channel side walls and to which thermal or piezoelectric elements in the region of the later channels are assigned;

- depositing a first layer on this substrate;

Structuring of this first layer with a large number of openings above the later channels;

- Isotropic etching of the substrate through the openings in the first layer until the channels are exposed;

- Deposition of a second layer on the first layer until the openings are closed; - Formation of outlet openings at each end of the channels.

Developments of this manufacturing method specified smα m αen claims 16 to 24.

The ink jet print head according to the invention and its production method is explained in more detail below in connection with exemplary embodiments. In the exemplary embodiments, the inkjet print head and its production method are described using a print head with thermal excitation. However, it is equally possible to produce a printhead with piezoelectric excitation. The invention therefore also relates to such printheads with piezoelectric excitation. Show it: FIG. 1 shows a sectional view through an ink jet head in the region of the thermal element of a channel in the longitudinal extension of the channel,

FIG. 2 shows a sectional view through the ink jet head from FIG. 1 in the area of the thermal element, but orthogonal to the longitudinal extent of the channel,

3 shows a top view of the top of the ink jet print head shown in FIGS. 1 and 2, in which the second layer of the cover plate has not yet been applied,

FIG. 4 shows a representation similar to FIG. 1, but with a thermal element arranged inside the channel space,

FIG. 5 shows a sectional illustration of the ink jet print head from FIG. 4 along the section line E-F there,

FIG. 6 shows a section of two channel ends of an inkjet print head with outlet openings arranged orthogonally to the longitudinal extent of the channels,

Figure 7 is a fragmentary schematic representation of the inkjet printhead with an integrated transistor on a silicon substrate.

In the following figures, unless otherwise stated, the same reference symbols designate the same parts with the same meaning.

The structure of a possible embodiment of an ink jet print head according to the invention is clear from a summary of FIGS. 1, 2 and 3. The The top view of the ink jet print head is shown schematically in detail in FIG. 3, the second layer 7 of a cover plate, which will be explained in more detail below, being removed for the sake of clarity. The inkjet printhead has a plurality of parallel adjacent channels Kl, K2, K3, K _4, which may for example have a width of 50 .mu.m. Between the emzelnene channels Kl, K2 or K2, K3 or _K3, K4 are disposed partitions 10 with a width of for example 30 microns. The channels K1, K2, K3 and K4 are still closed at their ends shown in FIG. 3 above. The channels K1, K2, K3 and K4 can have a total length of 1 cm, for example, and end on their underside in a reservoir R which is provided for receiving ink liquid. This reservoir R can be provided with support points S which connect the bottom and top walls of the reservoir R to one another to increase stability. In addition, a supply channel Z can open into the reservoir R, via which the ink liquid is supplied from a storage container.

Each of the channels K1, K2, K3 and K4 has an area with an associated thermal element 2 in order to emit droplets from the front end of the respective channel K1, K2, K3 according to the known DOD method when excited by a suitable current pulse and launch K4. For this purpose, the ink jet print head shown in FIG. 3 is cut at the cutting line S1 in one production step. The z. B. in the separation of the integrated producible inkjet heads by sawing or

Sawing, etching or breaking along the cutting line S1.

The ink jet print head is shown enlarged in FIGS. 1 and 2 along the section line AB and CD shown in FIG. 3 in the area of the thermal element 2. The thermal element 2 is, for example, a bar made of polysilicon arranged on an upper main surface of a substrate 1. The bar extends orthogonally to the longitudinal direction of the channel K, has a width of approximately 1.5 to 2 μm and a length which is somewhat shorter than the width of a channel K. The thermal elements 2 of the individual channels K1, K2, K3, K4 are, as shown in FIG. 3, preferably arranged next to one another, around the ink droplets emerging from the respective channels K1, K2, K3, K4 when the respective thermal element 2 is excited to allow the same energy and thus the same speed to emerge from the outlet openings, which are identified by the reference number 15 in FIG. 3.

The thermal element 2 serves as a heating resistance zone. The substrate 1 may e.g. B. contain a complete integrated drive circuit on a silicon substrate. A sufficiently thick heat-storing layer is preferably to be arranged below the thermal element 2, which prevents the main part of the thermal energy generated in the thermal element 2 from being applied

Current pulse flows in the substrate 1 and the liquid

("Ink") in channel K is not reached. The heat-storing layer is e.g. B. SiO 2 with a thickness greater than or equal to about 1.0 μm. When integrating with an electronic control circuit on a silicon substrate, z. B. a field oxide, preferably with an additional layer of plasma oxide or TEOS, can be used.

On the substrate 1 is a protective layer 3, the z. B. may consist of 300 nm plasma oxide and 600 nm plasma nitride. This protective layer 3 can completely cover the upper main surface of the substrate 1 and serves to protect the thermal element 2 from erosion by the imploding bubbles in the ink liquid. Furthermore, this protective layer 3 can also protect an inside of the substrate 1 integrated drive circuit in front of mobile ions, which may possibly be contained in the ink liquid.

A further protective layer 4, which protects against erosion, is preferably provided in the area of the thermal element 2. This protective layer 4 extends, as can be seen from FIGS. 2 and 3, completely beyond the outer contour of the thermal element 2 and additionally beyond the width of the channel K. This additional protective layer 4 can, for. For example, from sputtered tantalum (Ta) which is patterned by photolithography and a CF _4/0 ₂ -Plasmatrockenätzung exist.

A further substrate 5 with a thickness of preferably 5 to 50 μm is arranged over the substrate 1 thus prepared on the main surface. This substrate 5 determines the depth of the channels K and thus the height of the side walls of the channel K. The substrate 5 can, for. B. from plasma oxide (Si0 ₂ ), so-called Spm-On glasses (SOG), polysiloksanes or polyimide.

A first layer 6, which is provided with a multiplicity of openings O, is applied to the substrate 5, which is initially unstructured, by deposition. This layer 6 can e.g. B. consist of plasma nitride or polysilicon and have a thickness of about 1 to 3 microns. The openings 0, which can be formed by photolithography and subsequent dry etching, are arranged in the layer 6 such that the cavities necessary for the channels K1, K2, K3, K4 and the reservoir R are formed in the substrate 5 in a subsequent isotropic etching process . The openings 0 have, for example, a diameter of 1 μm and are in a row with one another in the region of the channels K1, K2, K3 and K4 and lie in the region of the reservoir, apart from the mentioned support points S, in a large number next to one another and with one another. Furthermore, a window for the feed channel Z from FIG. 3 can be etched out in the layer 6.

The channels K1, K2, K3 and K4 and the reservoir R (cf. FIG. 3) are etched by an isotropic etching, which must be sufficiently selective to the layers 3, 4 and 6 mentioned. In the event that the substrate 5 consists of plasma oxide or SOG and the layer 6 consists of polysilicon or silicon nitride, the isotropic etching can be carried out dry with a fluorine-containing plasma, in HF steam or wet with BHF (buffered HF). In the event that the substrate 5 consists of polyamide or another organic material, the isotropic etching can be carried out using an O2 plasma.

After the desired structuring of the channels K1, K2, K3, K4 etc. and the reservoir and thus also the undercutting of the layer 6 (cf. FIG. 2) has been achieved, a second layer 7 is applied to the layer 6, e.g. B. again by deposition. This layer 7 should preferably be sufficiently non-compliant. A complete closure of the openings 0 is thereby facilitated. The layer 7 is deposited until the openings 0 are closed (for example plasma Si3N ₄ deposition) or is ended beforehand (for example CVD deposition of boron-phosphorus-silicate glass BPSG). The sealing with BPSG is preferably accomplished by a subsequent flow process at high temperatures.

The described method enables closed channels K and reservoirs R to be produced using only a single substrate, a mechanical assembly process of two components as in the prior art no longer being necessary.

If necessary, another layer or more can be applied to layer 7 for further stabilization or as protection Layers are applied. For mass production, a large number of the structures shown in FIG. 3 can of course be produced simultaneously on a common substrate and then isolated.

Instead of the embodiments of an ink jet print head according to the invention described in FIGS. 1 to 3, in which the thermal elements 2 are arranged in the region of the channel bottom of the channels K, it is also possible, as shown in FIGS. 4 and 5, the thermal element 2 to be arranged within the channel K.

For this purpose, as can be seen from FIG. 4, a resistance layer is arranged within the substrate 5, which is then structured by photolithography and etching. In the exemplary embodiment in FIG. 4, the resistance layer of the thermal element 2 is arranged at approximately half the height of the substrate 5. For this purpose, the substrate 5 is first deposited on a base plate (not shown in FIG. 4) in order to achieve its desired half thickness. The resistance layer is then deposited on the substrate 5 and structured, as shown in FIG. 5. The thermal element 2 is designed in such a way that a thin beam 2 _a hangs within the channel K em, which is suspended on the edge side via wider webs within the substrate 5. The thermal element 2 is thus not in contact with the substrate 1, but is suspended within the channel K, so that the energy generated by the thermal element 2 can advantageously be released exclusively to the ink liquid within the channel K. As mentioned, this presupposes that the substrate 5 is deposited in two steps. When the substrate 5 is isotropically etched, the thermal element 2 is automatically exposed. 5, which shows a top view from above along the section line EF in FIG. 4, to the left and right of the beam 2a, wider webs serve as resistance connections and can either from above or below be contacted. Since, in contrast to the embodiment of FIGS. 1 and 2, the thermal element 2 is exposed to the ink liquid, it is recommended that the thermal element 2 be made of an erosion-resistant material, e.g. B. tantalum. After the deposition and structuring of the resistance layer forming the thermal element 2, the second part of the substrate 5 is deposited.

In connection with Fig. 3 it was explained that the upper ends of the channels K1, K2, K3 and K4 are provided with outlet openings 15 which are arranged on the end faces of the respective channels K1, K2, K3 and K4. The channels K1, K2 of an ink jet print head, which are shown in the exemplary embodiment in FIG. 6, likewise have outlet openings 15 at their channel ends. However, these outlet openings 15 are formed on the upper channel wall by circular openings. The outlet openings 15 are located in the layer 6, which is arranged above the substrate 5. So that the outlet openings 15 are not closed during the subsequent deposition of the layer 7, the diameters of the outlet openings 15 are chosen so large that the openings 0 are securely closed during the isotropic etching process, but the outlet openings 15 themselves are certainly not closed. In the exemplary embodiment in FIG. 6, the outlet openings 15 lie parallel to the substrate surface. The outlet openings 15 are preferably larger than 1.0 μm. The diameter is expediently chosen between 5 and 50 μm. The main advantage of these outlet openings 15 can be seen in their circular shape, which allows a circular droplet to emerge, as a result of which a dot can be formed on the paper with an exactly circular outer contour. It is also advantageous in this exemplary embodiment that the outlet openings 15 can be arranged not only in a row but also in a flat manner in a matrix. Furthermore, there is no sawing or breaking like in the Embodiment of Fig. 3 necessary, whereby contamination of the outlet opening 15 can be avoided.

7 shows a detail of the inkjet printhead in the region of a thermal element 2 consisting of polysilicon with an integrated transistor on a silicon substrate. The already known reference symbols stand for the known parts. For the sake of clarity, the representation of the channel K and the layers 6 and 7 has been omitted. The thermal element 2 made of low-doped polysilicon is contacted at the edge by highly doped polysilicon. The highly doped polysilicon sections are marked with the reference symbol 31. The two highly doped polysilicon sections 31 are contracted by metal tracks 30 which act as leads. Two heat-storing layers 20, 21 are arranged below the thermal element 2. The layer 20, which consists for example of TEOS-Si0 ₂ , is located directly below the thermal element 2. Below this layer 20 there is a further heat-storing layer 21 which, for. B. consists of FOX-Si0 ₂ .

The metal path 30, which adjoins the right high-doped polysilicon section 31, contacts with its other end an n ⁺ -doped layer which, for example, forms the source connection of a MOS transistor. The metal track 30 can consist of aluminum or bismuth. Already known from Fig. 1, protective layer 3 is made of plasma-Si0 ₂ and a layer of plasma-Si ^ _ß, which extends over the metal track 30 in the area of the MOS transistor.

Claims

PATENT CLAIMS

1. Inkjet printhead with channels (K; Kl; K2 ...) arranged parallel to one another and separated by partitions (10) within a substrate (5), which have a cover plate (6, 7) and at one of their ends each with an outlet opening (15) are provided, as well as with a thermal or piezoelectric element (2) assigned to each channel (K; Kl, K2 ...), which is located when excited and within the channel (K; Kl, K2 ...) Ink liquid causes an ink droplet to be ejected from the outlet opening (15), characterized in that the cover plate (6, 7) consists of at least two layers (6, 7) that directly on the channel (K; Kl, K2 ...) a first layer (6) is provided with a plurality of openings (0) lying above the channel (K; Kl, K2 ...), and that on the surface facing away from the channel (K; Kl, K2 ...) the first layer (6) is arranged a second layer (7) covering the openings (O) .

2. Inkjet printhead according to claim 1, characterized in that an electronic control circuit (A) is integrated within the substrate (5).

3. Inkjet print head according to claim 1 or 2, characterized in that the thermal element (2) at the bottom of the channel (K; Kl, K2 ...) is arranged as a heating resistor which is formed by a polysilicon layer.

4. Ink jet print head according to claim 3, characterized in that at least one protective layer (3, 4) is arranged between the channel bottom and the polysilicon layer.

5. Inkjet printhead according to claim 1 or 2, characterized in that the thermal or piezoelectric element (2) within the channel (K; Kl, K2 ...) is arranged and suspended on the edge side of the channel side walls, and that the thermal or piezoelectric element (2) is formed from erosion-resistant material.

6. Ink jet print head according to claim 3 or 4, characterized in that a heat-storing layer (20, 21), preferably a layer of silicon oxide (Si0 ₂ ) is arranged on the surface of the chemical element (2) opposite the channel bottom.

7. Inkjet print head according to claim 6, characterized in that the heat-storing layer (20, 21) has a thickness> about 1.0 microns.

8. inkjet print head according to claim 3, 4, 6 or 7, characterized in that between the channel bottom and the thermal element (2) at least one protective layer (3, 4) is arranged.

9. Ink jet print head according to claim 8, characterized in that the protective layer (3) consists of plasma oxide with a thickness of preferably 300 nm and plasma nitride with a thickness of preferably 600 nm.

10. Ink jet print head according to claim 8, characterized in that a further protective layer (4), which preferably consists of sputtered Ta, is arranged over the first protective layer (3).

11. Ink jet print head according to one of the preceding claims, characterized in that the channel has channel side walls with a height of about 5 microns to 50 microns.

12. Inkjet print head according to one of the preceding claims, characterized in that the channel side walls are formed from plasma oxide, polysiloksanen or polyimide.

13. Ink jet print head according to one of the preceding claims, characterized in that the openings (0) provided with the first layer (6) of the cover plate is a structured plasma nitride or polysilicon layer.

14. Ink jet print head according to one of the preceding claims, characterized in that the second layer (7) consists of borophosphosilicate glass or Si ₃ N ₄ .

15. A method for producing an inkjet printhead according to one of claims 1 to 14 with the following method steps:

- Providing a substrate (5) determining the height of the channel side walls, to which thermal or piezoelectric elements (2) in the area of the later channels (K; Kl, K2 ...) are assigned;

- Deposition of a first layer (6) on this substrate (5);

- Structuring this first layer (6) with a plurality of openings (0) above the later channels (K; Kl, K2 ...);

- Isotropic etching of the substrate (5) through the openings (0) in the first layer (6) until the channels (K; Kl,

K2 ...) are exposed;

- Deposition of a second layer (7) on the first layer (6) until the openings (0) are closed;

- Formation of outlet openings (15) at each end of the channels (K; Kl, K2 ...).

16. The method according to claim 15, characterized in that the substrate (5) is deposited as a plasma oxide, polysiloksane or polyimide with a thickness of about 5 microns to 50 microns on a base plate.

17. The method according to claim 15 or 16, characterized in that the structuring of the first layer

(6) by photolithography followed by dry etching.

18. The method according to any one of claims 15 to 17, characterized in that the substrate (5) made of plasma oxide or polysiloksane and the first layer (6) consists of polysilicon or silicon nitride and the structuring of the first layer (6) by photolithography with subsequent isotropic Etching is carried out dry with a fluorine-containing plasma in HF steam or wet with BHF.

19. The method according to any one of claims 15 to 17, characterized in that the substrate (5) consists of polyimide or another organic material and the structuring of the first layer (6) by photolithography with subsequent isotropic etching by a 0 ₂ plasma .

20. The method according to any one of claims 15 to 19, characterized in that the second layer is a deposition with plasma Si3N ₄ or a CVD deposition of borophosphorus silica glass.

21. The method according to claim 20, characterized in that after the deposition of the second layer (7) on the first layer (6), a flow process is carried out at high temperatures.

22. The method according to any one of claims 15 to 21, characterized in that the substrate (5) in a first step approximately up to half the desired thickness of the substrate (5) it is deposited that in a subsequent step a resistance layer is applied and this resistance layer is structured, and that in a further step the second half of the substrate is deposited on the resistance layer.

23. The method according to claim 22, characterized in that the resistance layer is an erosion-resistant layer.

24. The method according to any one of claims 15 to 21, characterized in that in the first layer (6) at each end of the channels such an opening (A) is arranged that it does not during the subsequent separation process of the second layer (7) is closed and these openings (A) serve as outlet openings (15).