EP0786870A1

EP0786870A1 - Protective circuit

Info

Publication number: EP0786870A1
Application number: EP97101117A
Authority: EP
Inventors: Jürgen Bareither
Original assignee: Texas Instruments Deutschland GmbH; Texas Instruments Inc
Current assignee: Texas Instruments Deutschland GmbH; Texas Instruments Inc
Priority date: 1996-01-24
Filing date: 1997-01-24
Publication date: 1997-07-30
Anticipated expiration: 2017-01-24
Also published as: DE19602456C1; JP3821899B2; DE69728309T2; EP0786870B1; JPH1084268A; US5831806A; DE69728309D1

Abstract

The present invention relates to a protective circuit for BiCMOS/CMOS circuitry in hybrid VCC systems during H operation. The object of the invention is to create such a protective circuit, which has the least possible influence on the circuitry employing it and only takes up a small amount of space. In order to attain such aim a protective circuit (MPC1,MNC2,R1,INV1) monitors the voltage (VOH) present at its output (AUS) by comparison with a predetermined voltage (REF) and when such predetermined voltage is exceeded it terminates H operation. The protective circuit is so designed that it only taps a negligible monitoring current component (Iex') from the output (AUS).

Description

The present invention relates to protective circuits and more particularly to protective circuits for BiCMOS/CMOS circuitry in hybrid VCC systems during H operation.
Hybrid VCC systems are well known in the prior art. In such systems at least two different H levels, as for example 3.3 V and 5 V are supplied to a bus by two suitable components with different BiCMOS/CMOS circuits.
In the majority of hybrid VCC systems a protective circuit is called for in H operation for the protection of components with a low power consumption.
The reasons for this will now be explained with reference to Figure 2 in detail. Figure 2 shows a part of an output stage of a BiCMOS/CMOS circuit of a prior art hybrid VCC system.
In Figure 2 MP4 denotes a PMOS output transistor having the function in its conducting state of supplying an H level, for example of 3.3 V, from its source terminal, the output AUS of the circuit, to a bus (not illustrated). The drain terminal of the PMOS output transistor MP4 is connected with a first supply potential VCC, which is selected in accordance with the H level to be supplied to the bus.
Between the output AUS and the gate terminal of the PMOS output transistor MP4 there is the principal current path of a PMOS transistor MP7, whose gate terminal is connected with the first supply potential VCC.
Furthermore the output AUS is connected via the principal current path of a PMOS transistor MP8 with the substrates of the PMOS transistors MP4, MP7 and MP8. The substrates are for their part connected via a Schottky diode D1 with the first supply potential VCC, said Schottky diode D1 being so placed in circuit that it prevents the flow of current toward VCC. At the gate terminal of the PMOS transistor MP8 VCC is also present.
The two PMOS transistors MP7 and MP8 have the function of preventing turning "ON" of the PMOS output transistor MP4, when output of the H level from the PMOS output transistor MP4 to the bus is disenabled because its gate terminal is connected to VCC.
Such turning "ON" might otherwise in fact occur, if a further component were to apply 5 V to the bus so that the voltage VOH at the output AUS would become 5V and greater than the voltage VCC, which is equal to 3.3 V, at the gate or, respectively, substrate of the PMOS output transistor MP4.
This effect is opposed by the PMOS transistors MP7 and MP8 because, at the voltages at the output AUS, which are greater than VCC + VtMP7 or, respectively, VCC + VtMP8, they are turned "ON" in order to cause the gate or, respectively, substrate potential from the PMOS output transistor MP4 to wax with the voltage VOH at the output AUS. VtMP7 and VtPM8 are the threshold voltages of the PMOS transistors MP7 and respectively MP8.
In this connection it is to be noted that a corresponding lower third and, respectively, fourth supply potential VCC - VtMP7 and, respectively, VCC - VtMP8 may also be present at the gate terminals of MP7 and, respectively, MP8 in order to render possible turning "ON" of the PMOS transistors MP7 and MP8 exactly at VCC.
Moreover a driver circuit is provided for the selective connection of the gate terminal of the PMOS output transistor MP4 with a second supply potential GND (here for instance ground potential) in order at the output AUS to produce an H level or with the first supply potential VCC to produce an L level at the output AUS.
This driver circuit comprises the following components: PMOS transistors MP1 and MP2, NMOS transistors MN1 and MN2, a pnp bipolar transistor Q1 and Schottky diodes D2 and D3.
The PMOS transistor MP2 has a drain terminal connected with the first supply potential VCC and a source terminal connected via the Schottky diode D3 with the gate terminal of the PMOS output transistor MP4. At its gate terminal the PMOS transistor MP2 gets an input signal EIN.
The gate terminal of the PMOS output transistor MP4 is furthermore connected via the NMOS transistors MN2 and MN3, placed in series with one another, with the second supply potential GND, which here is for example ground potential.
At its gate terminal the NMOS transistor MN3 gets the input signal EIN, which turns "ON" the NMOS transistor MN3, when the signal is in the H state.
The MNOS transistor MN2 is connected via a Schottky diode D2 with the source terminal of the PMOS transistor MP1, whose drain terminal is connected with the first supply potential VCC. The MOS transistors MP1 and MN2 get an enabling signal NCTRL at their gate terminal, said signal turning "OFF" the NMOS transistor MP1 and turning "ON" the NMOS transistor MN2, if such signal is in the H state.
The pnp bipolar transistor Q1 serves to shunt the PMOS transistor MP1 in a fashion dependent the complement CTRL of the enabling signal NCTRL at its base terminal.
In the condition in which EIN is equal to "H" and NCTRL is equal to "H" and accordingly CTRL is equal to "L", there will be the H state at the output AUS, for the gate terminal of the PMOS output transistor MP4 is then connected with ground via the two NMOS transistors MN2 and MN3 and the PMOS output transistor MP4 is accordingly turned "ON".
In the "L" state of NCTRL and accordingly the "H" state of CTRL or when EIN is "L", the gate terminal of the PMOS output transistor MP4 is supplied with the first supply potential VCC via the bipolar transistor Q1 and the Schottky diode D2 or via the PMOS transistor MP2 and the Schottky diode D3, with the result that the PMOS output transistor MP4 is turned "OFF". Then again the Schottky diodes D2 and D3 prevent the flow of current toward VCC
Let it now be supposed that the voltage VOH at the output AUS in the H state, i. e. with the PMOS output transistor MP4 turned "ON" by the driver circuit, it becomes greater than the voltage VCC (3.3 V) sent by it to the bus, namely because a further component, connected with the bus, supplies, in its H state VCC (= 5 V), to the bus.
Then a corresponding current Iex will flow via the PMOS output transistor MP4. If the voltage VOH at the output AUS continues to increase and becomes larger than VCC + VtMP7, then the PMOS transistor MP7 will be turned "ON", and an additional current component will flow from the output AUS via the transistors MP7, MN2 and MN3 to ground.
The current Iex so produced may damage components with a low power consumption and represent a substantial load on the power supply of the system. These problems may be only dealt using suitable protective circuitry.
Conventional protective circuits do however suffer from two substantial disadvantages, firstly that they impair function of the circuit employing them, as for instance the response behavior, and secondly that they have a substantial space requirement and accordingly hinder progressive integration of such circuitry.
One object of the present invention is accordingly to create such a protective circuit, which has the least possible influence on the circuitry employing same and only takes up a small amount of space.
In accordance with the invention this aim is to be attained by a protective circuit for a BiCMOS/CMOS circuit in hybrid VCC systems during H operation. The circuit comprises: a first, whose drain terminal is connected with a first supply potential, whose source terminal constitutes the output of the circuit; a driver circuit, which is connected with the gate terminal of the first transistor for selective connection of the gate terminal of the first transistor with the first supply potential in order to produce an L level at the output, or with a second supply potential in order during H operation to produce an H level at the output; and a second transistor, whose principal current path is between the output and the gate terminal of the first transistor and whose gate terminal is connected with a third supply potential to short circuit the output with the gate terminal of the first transistor, when the voltage at the output exceeds a predetermined value, a third transistor, whose principal current path is between the first supply potential and the gate terminal of the first transistor; a fourth transistor, whose principal current path is in series with the driver circuit between the gate terminal of the first transistor and the second supply potential; and a protective circuit triggering circuit for monitoring the voltage at the output and for limiting the monitoring current component then tapped from the output, for comparison of the voltage at the output with a predetermined reference voltage, and for causing output of a triggering signal during H operation, when the voltage at the output is larger than the reference voltage in order to turn "ON" the third transistor and to turn "OFF" the fourth transistor.
It is preferred for the protective circuit of the invention to be further characterized in that the output is connected via the principal current path of a fifth transistor with the substrates of the first, second and fifth transistors, the substrates being connected with the first supply potential and a fourth supply potential being present at the gate terminal of the fifth transistor.
It is preferred for the protective circuit of the invention to be further characterized in that a Schottky diode is placed between the first supply potential and the substrates, such Schottky diode being so placed in the circuit that it prevents any flow of current to the first supply potential.
It is preferred for the protective circuit of the invention to be further characterized in that the driver circuit comprises: a sixth transistor, whose principal current path is between the first supply potential and the gate terminal of the first transistor and which possesses a gate terminal for getting an input signal, seventh and eighth transistors placed in series with one another, and which on the one hand are connected with the gate terminal of the first transistor and on the other hand via the fourth transistor with the second supply potential, the eighth transistor getting the input signal at its gate terminal and the seventh transistor getting an enabling signal at its gate terminal; a ninth transistor, whose principal current path is between the gate terminal of the first transistor and the first supply potential; and a bipolar tenth transistor for shunting the ninth transistor in a fashion dependent the complement of the enabling signal at the base terminal thereof.
It is preferred for the protective circuit of the invention to be further characterized in that between the gate terminal of the first transistor and the ninth transistor a Schottky diode is placed, which prevents the flow of current toward the first supply potential.
It is preferred for the protective circuit of the invention to be further characterized in that between the sixth transistor and the gate terminal of the first transistor a Schottky diode is placed which prevents the flow of current toward the first supply potential.
It is preferred for the protective circuit of the invention to be further characterized in that between the third transistor and the gate terminal of the first transistor a Schottky diode is placed which prevents the flow of current toward the first supply potential.
It is preferred for the protective circuit of the invention to be further characterized in that the protective circuit triggering circuit comprises: an eleventh transistor, whose source terminal is connected with the output and whose gate terminal gets a reference voltage, a twelfth transistor, whose drain terminal is connected with the drain terminal of the eleventh transistor and whose gate terminal gets the enabling signal; a resistor, which is connected with the source terminal of the twelfth transistor and with the second supply potential; an inverter, whose input terminal is connected with a node placed between the source terminal of the twelfth transistor and the resistor, and whose output terminal is connected with the gate terminals of the third and of the fourth transistors.
It is preferred for the protective circuit of the invention to be further characterized in that the substrate of the eleventh transistor is connected via a Schottky diode with the first supply potential, said Schottky diode being so placed in circuit that it prevents any flow of current toward the first supply potential.
A particularly advantageous feature of the protective circuit of the invention is that both the switching "OFF" current and also the turning "OFF" voltage may be precisely set, that the circuit needs little space and that it does not have a disadvantageous effect on the response behavior of the circuitry incorporating it.
In the following the invention will be described in detail with reference to a preferred embodiment, which is represented in the accompanying drawings in which:-

Figure 1 shows a preferred embodiment of the protective circuit in accordance with the invention for BiCMOS/CMOS circuits in hybrid VCC systems during H operation, same being utilized in the output stage part depicted in Figure 2; and
Figure 2 shows a part of an output stage of a BiCMOS/CMOS circuit of a hybrid VCC system in accordance with the prior art.

The use of the protective circuit of the invention for BiCMOS/CMOS circuits in hybrid VCC systems in H operation is depicted in Figure 1.
In Figure 1 parts of which are the same as those in Figure 2 are provided with the same reference numerals in order to avoid repetition of the description of such parts.
The protective circuit of the invention comprises three main components.
Firstly an additional PMOS transistor MP3 is provided, whose drain terminal is connected with a first supply potential VCC and whose source terminal is connected via a Schottky diode D5, which is to prevent flow of current toward VCC, with the gate terminal of the PMOS output transistor MP4.
Moreover an NMOS transistor MNC1 is provided connected so that its principal current path is placed between the NMOS transistor MN3 and the second supply potential GND (here for example ground potential).
Finally a protective circuit triggering circuit is provided for driving the gate terminals of the transistors MP3 and MNC1. This protective circuit triggering circuit possesses, in the preferred illustrated working embodiment, a PMOS transistor MPC1, an NMOS transistor MNC2, a resistor R1, an inverter INV1 and a Schottky diode DC1.
The PMOS transistor MPC1 has its source terminal connected with the output AUS. At the gate terminal it gets a reference voltage REF, originating for example from a voltage divider or an already existing voltage source, for example the reference voltage source for a "power on demand" circuit.
The substrate of the PMOS transistor is connected via the Schottky diode DC1 with the first supply potential VCC, said Schottky diode being so placed in circuit that it prevents flow of current toward VCC.
The drain terminal of the PMOS transistor MPC1 is connected with the drain terminal of the NMOS transistor MNC2 which gets the above mentioned enabling signal NCRTL at the gate terminal.
The source terminal of the NMOS transistor NMC2 is connected via the resistor R1 with the second supply potential GND (here ground potential).
A node between the source terminal of the NMOS transistor MNC2 and the resistor R1 is connected with the input terminal of the inverter INV1, whose output terminal for its part constitutes the output terminal S of the driver circuit, said output S being connected with the gate terminals of the transistors MNC1 and MP3.
In the following the operation of the protective circuitry of the invention will be explained in more detail.
Triggering of the protective circuit for limiting the current Iex is dependent on the selection of the reference voltage REF, said voltage being present at the gate terminal of the transistor MPC1. In order for example to ensure that the protective circuit is active for output voltages (VOH) greater than VCC, the reference voltage must be set to a value REF equal to VCC - VtMPC1, VtMPC1 being the threshold voltage of the PMOS transistor MPC1.
This is due to the fact that the PMOS transistor MPC1 turns on when the following relationship (1) is complied with: $VOH > REF + VtMPC1$
or - after reaching the above value of REF - as expressed by the relationship (2): $VOH > VCC$
If the PMOS transistor MPC1 is switched "ON" in the H state on complying with the relationship (2), the node preceding the inverter INV1 goes to an H level, for in the H state, as mentioned above, the NMOS transistor NMC2 as well is turned "ON" owing to the state of NCTRL being "H".
As a result of this the output terminal S of the triggering circuit for the protective circuit changes to the inverted level, that is to say the L level. Accordingly the PMOS transistor MP3 is turned "ON" and consequently the PMOS transistor MP4 is turned "OFF". Moreover the NMOS transistor MNC1 is turned "OFF". Owing to this situation no further interfering components of the current Iex may flow, for both the current path via the PMOS output transistor MP4 and also the path via the PMOS transistor MP7 are blocked.
The resistor R1 serves in this respect to prevent a freely floating condition of the input terminal of the inverter INV1 in the H state. Owing to its existence there is only a negligible monitoring current component Iex' (of the order microamperes) through the triggering circuit of the protective circuit toward ground via R1. This current component may be set using R1 (typicallly 30 to 50 kW) and kept low in accordance with requirements.
More particularly this monitoring current component Iex' is defined by the following relationship (3) $Iex' = VOH - (VDSMPC1 - VtMNC2)/2$
In this relationship VDSMPC1 denotes the drain/source voltage of MPC1, and VtMNC2 is the threshold voltage of MNC2.
This will serve to make clear the one advantage of the NMOS transistor MNC2 that it reduces the voltage at the resistor R1 by VtMNC2 and accordingly contributes to a reduction of the value of the resistor R1. Accordingly the additional space required for the resistor R1 on the chip is marginal.
Furthermore this monitoring current component Iex' will not exist in the L state of the output stage because NCRTL is at "L" and disenabled and accordingly there are no losses.
By way of conclusion the principal functions of the triggering circuit of the protective circuit may be summarized as follows:

a) The voltage VOH is produced at the output AUS and the monitoring current component Iex' tapped at the output AUS is limited,
b) there is a comparison of the voltage VOH at the output AUS with a predetermined reference voltage REF, and
c) a triggering signal is supplied in H operation, when the voltage VOH at the output AUS is greater than the reference voltage REF in order accordingly to turn "ON" the PMOS transistor MP3 and to turn "OFF" the NMOS transistor MNC1.

The protective circuit of the invention provides effective protection for hybrid VCC driver without substantially increasing the space requirement and without having a disadvantageous effect on the function of the output stage, for example as regards its response behavior.
These properties mean that there is a wide field of application for the protection of load components with low power consumption against overloading so that the working life and reliability thereof may be increased.

Claims

A protective circuit comprising;
a first transistor (MP4) having a first current guiding region connected to a first supply potential (VCC), and a second current guiding region forming an output (AUS) of the circuit;

a driver circuit (MP1,MP2,Q1,MN2,MN3,D2 and D3) for selectively connecting the control region of the first transistor (MP4) to the first supply potential (VCC) to produce an L-level at the output (AUS), or to a second supply potential (GND) to produce an H-level at the output (AUS) during an H-operation;

a second transistor (MP7) having a principal current path between the output (AUS) and the control region of first transistor (MP4), a control region of the second transistor (MP7) connected to a third supply potential (VCC) to short-circuit the output (AUS) with the control region of the first transistor (MP4) when the voltage at the output (AUS) exceeds a predetermined value;

a third transistor (MP3) having a principal current path between the first supply potential (VCC) and the control region of the first transistor (MP4);

a fourth transistor (MNC1) having a principal current path in series with the driver circuit (MP1,MP2,Q1,MN2,MN3,D2 and D3) between the control region of the first transistor (MP4) and the second supply potential (GND);

a triggering circuit (MPC1,DC1,MNC2,RI and INV1) for monitoring voltage (VOH) at the output (AUS), for limiting a monitoring current component (Iex') tapped from the output (AUS), for comparing the voltage at the output (AUS) with a predetermined reference voltage (REF), and for generating a triggering signal during the H-operation when the voltage (VOH) at the output (AUS) is greater than the reference voltage (REF) to cause the third transistor (MP3) to turn ON and to cause the fourth transistor (MNC1) to turn OFF.
The circuit as claimed in Claim 1, wherein the output (AUS) is connected via the principal current path of a fifth transistor (MP8) to the substrates of the first, second and fifth transistors (MP4,MP7,MP8), the substrates being connected with the first supply potential (VCC) and a fourth supply potential (VCC) being present at a control region of the fifth transistor (MP8).
The circuit as claimed in Claim 2 further comprising;
a diode (D1) placed between the first supply potential (VCC) and the substrates, the diode (D1) being so placed in the circuit that it substantially prevents current flow to the first supply potential (VCC).
The circuit as claimed in any preceding claim, wherein the driver circuit (MP1,MP2,Q1,MN2,MN3,D2 and D3) further comprises;
a sixth transistor (MP2) having a principal current path between the first supply potential (VCC) and the control region of the first transistor (MP4), the sixth transistor (MP2) including a control region for receiving an input signal (EIN);

a seventh transistor (MN2) and an eighth transistor (MN3) placed in series with one another and that are connected to the control region of the first transistor (MP4) and via the fourth transistor (MNC1) to the second supply potential (GND), the eighth transistor (MN3) being capable of receiving the input signal (EIN) at a control region thereof and the seventh transistor (MN2) being capable of receiving an enabling signal (NCTRL) at a control region thereof;

a ninth transistor (MP1) having a principal current path between the control region of the first transistor (MP4) and the first supply potential (VCC);

a tenth transistor (Q1) for shunting the ninth transistor (MP1) in a manner dependent upon the complement of the enabling signal (NCTRL) at a current guiding region thereof.
The circuit as claimed in Claim 4 further comprising;
a diode (D2) connected between the control region of the first transistor (MP4) and the ninth transistor (MP1) for substantially preventing current flow towards the first supply potential (VCC).
The circuit as claimed in Claim 4 or Claim 5 further comprising;
a diode (D3) connected between the sixth transistor (MP2) and the control region of the first transistor (MP4) for substantially preventing current flow towards the first supply potential (VCC).
The circuit as claimed in any preceding claim further comprising;
a diode (D5) connected between the third transistor (MP3) and the control region of the first transistor (MP4) for substantially preventing current flow towards the first supply potential (VCC).
The circuit as claimed in any preceding claim, wherein the triggering circuit (MPC1,DC1,MNC2,RI and INV1) comprises;
an eleventh transistor (MPC1) having a second current guiding region connected to the output (AUS) and a control region connected to receive a reference voltage (REF);

a twelfth transistor (MNC2) first current guiding region connected to the first current guiding region of the eleventh transistor (MPC1) and having a control region connected to receive the enabling signal (NCTRL);

a resistance (R1) connected to the second current guiding region of the eleventh transistor (MPC1) and to the second supply potential (GND);

inverting means (INV1) having an input terminal connected to a node placed between the second current guiding region of the eleventh transistor (MPC1) and the resistance (R1), and having an output terminal (S) connected to the control regions of the third transistor (MP3) and the fourth transistor (MNC1).
The circuit as claimed in Claim 8, wherein the substrate of the eleventh transistor (MPC1) is connected via a diode (DC1) to the first supply potential (VCC), said diode (DC1) being placed such that it substantially prevents current flow towards the first supply potential (VCC).
The circuit as claimed in any preceding claim, wherein the first transistor (MP4), the second transistor (MP7), the third transistor (MP3), the fifth transistor (MP8), the sixth transistor (MP2), the ninth transistor (MP1) and the tenth transistor (MPC1) are PMOS transistors.
The circuit as claimed in any preceding claim, wherein the fourth transistor (MNC1), the seventh transistor (MN2), the eighth transistor (MN3), and the twelfth transistor (MNC2) are NMOS transistors.
The circuit as claimed in any of Claims 4 to 11, wherein the tenth transistor is a bipolar transistor.
The circuit as claimed in any of Claims 3 to 12, wherein one or more of the first diode (D1), the second diode (D2), the third diode (D3), the fourth diode (D5), and the fifth diode (DC1) are Schottky diodes.
The circuit as claimed in any preceding claim, wherein the circuit is comprised in BiCMOS/CMOS circuitry for use in hybrid VCC systems during H-operation.