EP0753767B1 - Diffracting optical apparatus - Google Patents
Diffracting optical apparatus Download PDFInfo
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- EP0753767B1 EP0753767B1 EP96113153A EP96113153A EP0753767B1 EP 0753767 B1 EP0753767 B1 EP 0753767B1 EP 96113153 A EP96113153 A EP 96113153A EP 96113153 A EP96113153 A EP 96113153A EP 0753767 B1 EP0753767 B1 EP 0753767B1
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- optical waveguide
- wavelength
- coherent light
- fundamental waves
- waves
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
- G02F1/3775—Non-linear optics for second-harmonic generation in an optical waveguide structure with a periodic structure, e.g. domain inversion, for quasi-phase-matching [QPM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12173—Masking
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12183—Ion-exchange
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/30—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 grating
- G02F2201/307—Reflective grating, i.e. Bragg grating
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/22—Function characteristic diffractive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Description
- The present invention relates to a diffracting device with periodically inverted polarization layers, a wavelength changing device using the diffracting device, a laser beam generating apparatus including the diffracting device and an integrated optical circuit including the diffracting device.
- A diffracting device is important to be utilized for not only a device having an optical waveguide but also a light integrated circuit. In cases where a plurality of gratings are periodically arranged in an optical waveguide to manufacture a diffracting device, light propagated through the optical waveguide is controlled by the gratings. For example, in cases where the gratings periodically arranged in the optical waveguide act as a distributed Bragg reflector, coherent light having a particular wavelength is selectively reflected in the optical waveguide, and the coherent light reflected is propagated through the optical waveguide in the opposite direction.
- A conventional diffracting device is described with reference to Fig 1.
- Fig. 1 is a diagonal view of a conventional diffracting device having a distributed Bragg reflector.
- As shown in Fig. 1, a
conventional diffracting device 11 consists of a LiNbO3 substrate 12, a plurality ofgratings 13 periodically arranged in series in a central surface of thesubstrate 12 at regular intervals Λ1, and a Ti diffusedoptical waveguide 14 extending from one side of thesubstrate 12 to the other side through thegratings 13. In the above configuration, light beams having various wavelengths are radiated to anincident surface 14a positioned at one side of theoptical waveguide 14, and a particular light beam having a particular wavelength is reflected by thegratings 13 because periodic change in a refractive index of theoptical waveguide 14 is formed by thegratings 14 periodically arranged. That is, thegratings 13 act as a distributed Bragg reflector. Therefore, the particular light beam is output from theincident surface 14a of theoptical waveguide 14, and remaining light beams except the particular light beam are output from anoutput surface 14b positioned at the other side of theoptical waveguide 14. - Next, a conventional manufacturing method of the
conventional diffracting device 11 is described with reference to Figs. 2A to 2D. The method is performed with two superimposed masks (J. SOCHTIG, "Ti:LiNbO3 Stripe Waveguide Bragg Reflector Grating", Electronics Letters, Vol.24, No.14, p.844-845 (1988)). - As shown in Fig. 2A, after the
optical waveguide 14 is formed by diffusing Ti into a central surface region of thesubstrate 12, athin Ti film 15 is deposited on thesubstrate 12 and theoptical waveguide 14. Thethin Ti film 15 is utilized as a first superimposed mask. Thereafter, aphotoresist 16 is spin coated on theTi film 15. Thephotoresist 16 is utilized as a second superimposed mask. Thereafter, as shown in Fig. 2B, thephotoresist 16 is exposed to interference light according to an interference-exposure process, and thephotoresist 16 exposed is developed to remove exposed areas of thephotoresist 16. Therefore, a periodic grating pattern is transferred to thephotoresist 16. Thereafter, as shown in Fig. 2C, theTi film 15 is periodically etched at regular intervals Λ1 by reactive ions generated in an atmosphere of CCl2F2 gas according to a reactive ion etching to transfer the periodic grating pattern of thephotoresist 16 to theTi film 15. Thereafter, as shown in Fig. 2D, the patternedfilm 15 is used as a mask, and the LiNbO3 substrate 12 is etched at the regular intervals Λ1 by reactive ions generated in an atmosphere of CF4, Ar, and N2 according to the reactive ion etching. Therefore, thegratings 13 are periodically formed in surface portions of thesubstrate 12 at the regular intervals Λ1. Thereafter, both sides of theoptical waveguide 14 are polished. - Fig. 3 graphically shows transmitting and reflecting characteristics of the diffracting
device 11. - As shown in Fig. 3, when light beams having wavelengths of 1.5 µm band are radiated from a light emitting diode and are coupled to the
optical waveguide 14 of the diffractingdevice 11, a particular light beam having a particular wavelength λp which satisfies a Bragg condition is selectively reflected. The Bragg condition is determined by regular intervals of thegratings 13 and the effective refractive index of the grating. - Fig. 4 is a cross-sectional view of another conventional diffracting device.
- As shown in Fig. 4, another
conventional diffracting device 21 consists of aglass substrate 22, anoptical waveguide 23 formed in a central surface portion of thesubstrate 22 according to an ion-exchange process, and a plurality of SiO2 gratings 24 periodically arranged at regular intervals Λ1=1.2 µm. A total length of the SiO2 gratings 24 is 10 mm in a propagation direction of the coherent light. - A distributed Bragg reflector is formed by a periodic structure composed of the SiO2 gratings 24 and spaces between the
gratings 24 in cases where a distributed Bragg reflector condition (or DBR condition) Λ1 - mλ/2N is satisfied. Here the symbol Λ1 denotes the regular intervals of thegratings 24, the symbol m is a grating order of the periodic structure, the symbol λ denotes a wavelength of coherent light, and the symbol N denotes an averaged refractive index of the periodic structure. When the wavelength of the coherent light is 1.3 µm, the DBR condition is satisfied to reflect the coherent light in the periodic structure of which the grating order m is equal to 3. - In the above configuration, coherent light converged at an
incident end facet 23a transmits through theoptical waveguide 23. In this case, a part of the coherent light is distributed off theoptical waveguide 23, so that the coherent light distributed off theoptical waveguide 23 is reflected by thegratings 24. - Next, a manufacturing method of the diffracting
device 21 is described. - After the
optical waveguide 23 is formed in thesubstrate 22, a SiO2 film is deposited on theoptical waveguide 23 and thesubstrate 22. Thereafter, a photoresist film is coated on the SiO2 film. Thereafter, grating pattern areas of the photoresist is selectively exposed to ultraviolet radiation according to a conventional interference-exposure process, and the photoresist is developed to remove the grating pattern areas of the photoresist. Therefore, a grating pattern is transferred to the photoresist film. Thereafter, the SiO2 film is etched by reactive ions according to a dry etching while the photoresist film is utilized as a mask. Therefore, the grating pattern is transferred to the SiO2 film, and thegratings 24 made of SiO2 are formed on theoptical waveguide 23. - When 1.3 µm wavelength coherent light is coupled to the
optical waveguide 23. 5 % of the coherent light is reflected by the SiO2 gratings 24. - However, because the
substrate 12 is made of a hard material LiNbO3, complicated processes are required to directly etch thesubstrate 12 in theconventional diffracting device 11. Also, it is difficult to etch thegratings 13 made of the hard material by a predetermined depth. Therefore, the reproducability of theapparatus 11 deteriorates, and thegratings 13 are often excessively etched. Also, the surfaces of thegratings 13 become rough because of the radiation of the reactive ions. Therefore, light beams transmitting through theoptical waveguide 14 are increasingly scattered. In the same manner, because thegratings 24 on thesubstrate 22 are made of a hard material SiO2, complicated processes are required to form thegratings 24 according to an etching process in theconventional diffracting device 21. Also, it is difficult to etch thegratings 24 without erroneously etching theoptical waveguide 23 according to a dry etching process. Therefore, the reproducability of theapparatus 21 deteriorates, and thegratings 24 are often excessively etched to etch theoptical waveguide 23. As a result, the surfaces of theoptical waveguide 24 become rough so that the coherent light is increasingly scattered. - Also, it is difficult to etch material having a large refractive index and a large transmission coefficient because an etching rate of those materials is very low in general. Therefore. it is troublesome to deeply form the
gratings gratings gratings gratings - Also, because the unevenness of the periodic pattern in the
gratings optical waveguides gratings 13 and theoptical waveguide 23, a transmission loss of the fundamental waves is increased. Therefore, the intensity of the light is lowered, and the diffraction efficiency of thegratings - Also, because the position of the
gratings substrates gratings gratings gratings - A wavelength changing device having an optical waveguide has been proposed. The optical waveguide is provided with alternate rows of non-inverted and inverted polarization layers to change fundamental waves transmitting through the optical waveguide to second harmonic waves. The inverted polarization layers are formed by compulsorily inverting the non-linear polarization of ferroelectric substance. The wavelength changing device is utilized for a small-sized shorter wavelength laser beam generating apparatus because fundamental waves radiated from a semiconductor laser are changed to second harmonic waves such as a green or blue light. Therefore, the wavelength changing device is useful in a printing operation, an optical information processing, an optical applied measuring control field, and an optical communication field.
- The wavelength change in the wavelength changing device can be performed with high efficiency because fundamental waves radiated from a semiconductor laser are changed to second harmonic waves in the alternate rows of non-inverted and inverted polarization layers. Also, because the wavelength of the fundamental waves changed to the second harmonic waves depends on regular intervals of the alternate rows, the wavelength of the second harmonic waves obtained in the wavelength changing device can be arbitrarily changed. However, because the regular intervals of the alternate rows in the wavelength changing device are fixed, the output power of the second harmonic waves considerably fluctuates when the wavelength of the fundamental waves radiated from a semiconductor laser fluctuates.
- For example, the change of wavelength in a shorter wavelength laser beam generating apparatus has been proposed (K. Yamamoto et al, "Milliwatt-Order Blue-Light Generation in a Periodically Domain-Inverted LiTaO3 Waveguide", Optics Letters, Vol.16. No.15, p.1156-1158, (1991)). In the laser beam generating apparatus of Yamamoto, fundamental waves of semiconductor laser beams are changed to second harmonic waves in an optical waveguide having alternate rows of non-inverted and inverted polarization layers according to quasi-phase matching.
- Fig. 5 is a constitutional view of a conventional shorter wavelength laser beam generating apparatus.
- As shown in Fig. 5, a conventional shorter wavelength laser
beam generating apparatus 31 consists of asemiconductor laser 32, acollimator lens 33 for collimating fundamental waves radiated from thesemiconductor laser 32, a λ/2plate 34 for rotatively polarizing the fundamental waves, a focusinglens 35 having a numerical aperture NA=0.6, and awavelength converting device 36 having anoptical waveguide 37 for changing the fundamental waves converged at anincident end facet 37a to second harmonic waves such as blue light according to the quasi-phase matching. Theoptical waveguide 37 is provided with alternate rows of non-inverted and inverted polarization layers. Theincident end facet 37a and anoutput end facet 37b of theoptical waveguide 37 are coated with antireflection coating to prevent the fundamental waves from being reflected in the incident andoutput end facets - In the above configuration, 874 nm wavelength fundamental waves are radiated from the
semiconductor laser 32 and are collimated by thecollimator lens 34. Thereafter, the fundamental waves are rotatively polarized by the λ/2plate 34 and are converged at theincident end facet 37a of theoptical waveguide 37 by the focusinglens 35. In this case, though the antireflection coating is coated on theincident end facet 37a, approximately 1 % of the fundamental waves are fed back to thesemiconductor laser 32 in practical use. Thereafter, blue light consisting of 437 nm wavelength second harmonic waves are radiated from theoutput end facet 37b of theoptical waveguide 37 on condition that a quasi-phase matching condition formulated by an equation Λ2 = λf/{2*(N2ω-Nω)} is satisfied. Here the symbol Λ2 denotes regular intervals of the alternate rows in theoptical waveguide 37, the symbol λf denotes a wavelength of the fundamental waves, the symbol N2ω denotes an effective refractive index of the non-inverted and inverted polarization layers for the second harmonic waves, and the symbol Nω denotes an effective refractive index of the non-inverted and inverted polarization layers for the fundamental waves. - Accordingly, the fundamental waves of infrared light can be reliably changed to blue light. For example, when the pumping power of the fundamental waves converged at the
incident end facet 37a of theoptical waveguide 37 is 35 mW, the pumping power of the blue light radiated from theoutput end facet 37b is 1.1 mW. - However, because the blue light is generated by changing the fundamental waves to the second harmonic waves and multiplying the second harmonic waves in the
optical waveguide 37 in which the alternated rows of the non-inverted and inverted polarization layers are arranged at regular intervals, a wavelength range of the fundamental waves allowed to obtain the second harmonic waves is only 0.2 nm in theoptical waveguide 37. Also, the wavelength of the fundamental waves radiated from thesemiconductor laser 32 fluctuates depending on the ambient temperature of thesemiconductor laser 32. The fluctuation ratio of the wavelength to the ambient temperature is about 0.2 nm/°C. Therefore, in cases where the ambient temperature of thesemiconductor laser 32 varies by 1 °C, the blue light cannot be generated in theoptical waveguide 37. - In addition to the fluctuation of the ambient temperature, the amplification mode of the fundamental waves radiated from the
semiconductor laser 32 varies because approximately 1% of the fundamental waves converged at theincident end facet 37a of theoptical waveguide 37 is fed back to thesemiconductor laser 32. In this case, the wavelength of the fundamental waves radiated from thesemiconductor laser 32 varies about 1 nm after a short time. Therefore, the stable change period of the fundamental waves to the second harmonic waves is no more than several seconds. - Accordingly, the stabilization of the wavelength of the fundamental waves is required to stably generate the blue light in the conventional shorter wavelength laser
beam generating apparatus 31. - To stably change fundamental waves to second harmonic waves with a wavelength changing device according to the quasi-phase matching, a wavelength changing device having a plurality of gratings periodically arranged has been proposed (K. Shinozaki, et al. "Self-Quasi-Phase-Matched Second-Harmonic Generation in the Proton-Exchanged LiNbO3 Optical Waveguide with Periodically Domain-Inverted Regions", Appl. Phys. Lett., Vol.59, No.5, p.510-512(1991)).
- Fig. 6 is a constitutional view of another conventional shorter wavelength laser beam generating apparatus in which a conventional wavelength changing device of Shinozaki is arranged.
- As shown in Fig. 6, a conventional shorter wavelength laser
beam generating apparatus 41 consists of a semiconductor laser 42, a conventionalwavelength changing device 43 for changing 1.3 µm wavelength fundamental waves radiated from the semiconductor laser 42 to 0.65 µm wavelength second harmonic waves, a spectrum analyzer 44 for analyzing the wavelength of the fundamental waves radiated from the semiconductor laser 42, and two pairs ofoptical lenses 45 for converging the fundamental waves radiated from the semiconductor laser 42 at single mode fibers connected to thewavelength changing device 43 and the spectrum analyzer 44. Thewavelength changing device 43 consists of a polarized LiNbO3 substrate 46, anoptical waveguide 47 having inverted polarization layers 48 (or domain-inverted regions) periodically arranged at regular intervals Λ. Regions between the inverted polarization layers 48 are called non-inverted polarization layers 49 for convenience. - In the
optical waveguide 47, mismatching between a propagation constant of the fundamental waves and another propagation constant of the second harmonic waves is compensated by alternate rows of the inverted and non-inverted polarization layers 48, 49. This is, because the difference in the propagation constant between the fundamental waves and the second harmonic waves occurs, the phase of the fundamental waves agrees with that of the second harmonic waves in theoptical waveguide 47 each time the fundamental waves transmit a minimum distance. Therefore, in cases where the regular intervals Λ of the inverted polarization layers 48 agree with a multiple of the minimum distance, the quasi-phase matching condition Λ = λf/{2*(N2ω-Nω)} is satisfied, and the fundamental waves are changed to the second harmonic waves. The condition that the regular intervals Λ of the inverted polarization layers 48 agree with the minimum distance is called a first-order quasi-phase matching. Also, the condition that the regular intervals Λ agree with N times minimum distance is called an Nth-order quasi-phase matching. - In the above configuration, fundamental waves having various wavelengths around 1.3 µm are radiated from the semiconductor laser 42 and are converged at the
optical waveguide 47 through theoptical lenses 45 and the single mode fiber. In theoptical waveguide 47, quasi-phase matching (QPM) fundamental waves having a QPM wavelength satisfying the quasi-phase matching condition are selectively changed to second harmonic waves, and the second harmonic waves are efficiently amplified and output from theoptical waveguide 47. Therefore, the QPM fundamental waves are selectively changed to the second harmonic waves in thewavelength changing device 43. - In addition, because the effective refractive index of the inverted polarization layers 48 is slightly higher than the effective refractive index of the non-inverted polarization layers 49, a periodic structure in the effective refractive index consisting of the inverted polarization layers 48 and the non-inverted polarization layers 49 is produced in the
optical waveguide 47. Therefore, a plurality of gratings are substantially formed in theoptical waveguide 47. A group of the gratings substantially formed functions as a distributed Bragg reflector on condition that the DBR condition Λ = mλ/2N is satisfied. That is, DBR fundamental waves having a DBR wavelength satisfying the DBR condition are selectively reflected in the gratings. Thereafter, the reflected DBR fundamental waves are fed back to the semiconductor laser 42. Therefore, the wavelength of the fundamental waves radiated from the semiconductor laser 42 is fixed to the DBR wavelength. - Accordingly, in cases where the DBR wavelength of the DBR fundamental waves reflected in the periodic structure functioning as the distributed Bragg reflector agrees with the QPM wavelength of the QPM fundamental waves, the change of the fundamental waves to the second harmonic waves can be stably performed in the conventional shorter wavelength laser
beam generating apparatus 41. - To achieve an agreement of the DBR wavelength of the reflected DBR fundamental waves and the QPM wavelength of the QPM fundamental waves, regular intervals Λ of the inverted polarization layers 48 periodically arranged are set to 13 µm µm. In this case, the wavelength of the fundamental waves radiated from the semiconductor laser 42 is fixed to 1.327 µm, and 1.327/2 µm wavelength second harmonic waves are stably generated. Also, the alternate rows of the inverted and non-inverted polarization layers 48, 49 becomes a first-order in the QPM structure, and the gratings functioning as the distributed Bragg reflector becomes a forty-third order in the DBR periodic structure. The grating order m is defined as an equation m= Λ/(λf/2N). Here the symbol Λ denotes the regular intervals of the inverted polarization layers 48, the symbol λf denotes a wavelength of the fundamental waves, and the symbol N denotes an effective averaged refractive index of the
optical waveguide 47 for the fundamental waves. In cases where the pumping power of the fundamental waves converged at theoptical waveguide 47 is 60 µW and the length of theoptical waveguide 47 is 2 mm, the output power of the second harmonic waves is 0.652 pW. - However, because the inverted polarization layers 48 periodically arranged function as a distributed Bragg reflector grating in the conventional shorter wavelength laser
beam generating apparatus 41, the propagation speed of the fundamental waves and the propagation speed of the second harmonic waves are required to be controlled with high accuracy to achieve the agreement of the DBR wavelength of the DBR fundamental waves and the QPM wavelength of the QPM fundamental waves. - Also, the range of the wavelength of the fundamental waves changed in the
apparatus 41 is limited. Therefore, even though 1. 3 µm wavelength fundamental waves can be stably changed to 0. 65 µm wavelength second harmonic waves, there is a drawback that shorter wavelength second harmonic waves (the wavelengths range from 400 nm to 500 nm useful in various fields) are difficult to be generated in theapparatus 41. - Also. because the inverted polarization layers 48 periodically arranged are utilized as the distributed Bragg reflector in the conventional shorter wavelength laser
beam generating apparatus 41, the grating order in the DBR periodic structure becomes large in theapparatus 41. For example, in cases where the alternate rows of the inverted and non-inverted polarization layers 48, 49 is equivalent to the first-order in the QPM structure, the periodic structure functioning as the distributed Bragg reflector is equivalent to a several tens of grating order in the DBR periodic structure. Therefore, the fundamental waves are coupled to various radiation modes in theoptical waveguide 47. The radiation modes consists of N types of radiation modes from a first radiation mode corresponding to the first grating order to an Nth radiation mode corresponding to an Nth grating order in cases where the periodic structure of the inverted polarization layers 48 is equivalent to the Nth grating order. Thereafter, the fundamental waves are radiated to various directions without being changed to the second harmonic waves while being led by the various radiation modes. As a result, the fundamental waves attenuates in theoptical waveguide 47, and a radiating loss of the fundamental waves is increased. Accordingly, because the fundamental waves contributing the generation of the second harmonic waves are decreased by the increase of the radiating loss. there is a drawback that a changing efficiency of the fundamental waves to the second harmonic waves deteriorates. This drawback is illustrated in Fig. 7. - Fig. 7 graphically shows a relationship between a reflection efficiency of the fundamental waves and the grating order and another relationship between a radiation loss of the fundamental waves and the grating order. As shown in Fig. 7, in cases where the gratings are arranged in a tenth grating order periodic structure, the reflection efficiency is only 10 %, and the radiation loss is no less than 75 %. Therefore, in cases where the grating order of periodic structure in the the distributed Bragg reflector grating is equal to or sore than third grating order, the radiation loss of the fundamental waves is too many so that the conventional shorter wavelength laser
beam generating apparatus 41 is not useful in practical use. - In addition, higher grating order of the DBR periodic structure adversely influences on not only the fundamental waves but also the second harmonic waves generated in the
optical waveguide 47 to increase a radiation loss of the second harmonic waves. Therefore, the second harmonic waves are scattered and reflected in theoptical waveguide 47 to decrease the second harmonic waves radiated from anoutput end facet 47b of theoptical waveguide 47. As a result, there is a drawback that the changing efficiency of the fundamental waves to the second harmonic waves moreover deteriorates. Accordingly, a wavelength changing device having the DBR periodic structure of a lower grating order (a first grating order or a second grating order) is required to change the fundamental waves to the second harmonic waves at high efficiency in practical use. - The present invention provides a diffracting device, comprising:
- a substrate made of a non-linear optical crystal, the substrate being polarized in a first polarization direction;
- an optical waveguide arranged in the substrate for transmitting coherent light in a propagation direction perpendicular to the first polarization direction; and
- a plurality of inverted polarization layers polarized in a second polarization direction opposite to the first polarization direction of the substrate and periodically arranged in the substrate at regular intervals in the propagation direction to reflect a part of the coherent light in a diffraction grating composed of the optical waveguide and the inverted polarization layers periodically crossing the optical waveguide, characterised by
- an electrode arranged on the optical waveguide, in which the inverted polarization layers periodically cross, for including an electric field which penetrates through the diffraction grating to change a first refractive index of the inverted polarization layers and to change a second refractive index of the optical waveguide, changes of the first refractive index with the electric field being opposite to those of the second refractive index with the electric field to increase or decrease a difference between the first refractive index and the second refractive index.
-
- In the above configuration, when an electric potential is applied to the electrode an electric field penetrating through the inverted polarization layers and the non-inverted polarization layers is induced. Therefore. the refractive index of the inverted polarization layers and the non-inverted polarization layers change according to an electro-optic effect. Also, because the polarization direction of the inverted polarization layers is opposite to that of the non-inverted polarization layers, increase or decrease of the first refractive index of the inverted polarization layers is opposite to the second refractive index of the non-inverted polarization layers. Therefore, a diffraction grating is formed by periodic change of the refractive index in the alternate rows of the inverted polarization layers and the non-inverted polarization layers.
- When coherent light transmits through the optical waveguide, the coherent light is reflected by the alternate rows which function as the diffraction grating, on condition that a distributed Bragg condition Λ = m*λ/(2N) is satisfied. Here the symbol Λ denotes the regular intervals of the inverted polarization layers, the symbol λ denotes the wavelength of the coherent light, the symbol N denotes an averaged refractive index of the alternate rows, and the symbol m denotes a grating number.
- Accordingly, because the second inverted polarization layers are generally formed at a high uniformity without any damage, the diffracting device according to the present invention has superior reflection efficiency. Also, a transmission loss can be lowered.
- Optimally according to the invention, the ratio of a width of each of the gratings in the propagation direction to the regular intervals Λ of the gratings is in a first range from 0.05 to 0.24 or in a second range from 0.76 to 0.95 on condition that an equation Λ = m*λ/(2N), m=2 where the symbol λ is a wavelength of the coherent light and the symbol N is an effective refractive index of the optical waveguide.
- In the above configuration, the regular interval of the gratings is set to satisfy the DBR condition expressed by the equation m*λ/(2N), m=2. In this case, a radiation loss for the coherent light transmitting through the optical waveguide is generally increased. For example, when the ratio W/Λ of the width W of each of the gratings to the regular intervals Λ of the gratings is in the vicinity of 0.5, the diffracting device does not function as the distributed Bragg reflector. However, in cases where the ratio W/Λ is in the first range from 0.05 to 0.24 or in the second range from 0.76 to 0.95, the diffracting device functions as the distributed Bragg reflector at high efficiency.
- The present invention also provides a wavelength changing device including the diffracting device described above and further comprising:
- a plurality of resist elements having a first refractive index N1 and periodically arranged on an incident side of the optical waveguide at grating intervals in the propagation direction of the coherent light, the resist elements being made of a soft material which has high workability; and
- a reflecting element having a second refractive index N2 higher than the first refractive index N1 of the resist elements and arranged between the resist elements for reflecting a part of fundamental waves of the coherent light distributed in the reflecting element, a refractive change being made by a periodic structure consisting of the resist elements and the reflecting element, and the remaining part of the fundamental waves being changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers periodically crossing the optical waveguide.
-
- In the above configuration, a part of fundamental waves radiated to the optical waveguide change to second harmonic waves, of which a wavelength λh is half of another wavelength λf of the fundamental waves, in the alternate rows of the inverted polarization layers and the non-inverted polarization layers. Thereafter, the second harmonic waves are output from an output end facet of the optical waveguide.
- Also, the fundamental waves not changing to the second harmonic waves are reflected by the periodic structure of the covering layer and the gratings because the first refractive index N1 of the gratings differs from the second refractive index of the covering layer to form a refractive change functioning as a diffraction grating. The fundamental waves reflected are output from an incident end facet of the optical waveguide and are fed back to a fundamental wave source such as a semiconductor laser. Therefore, the wavelength λf of the fundamental waves radiated from the fundamental source is fixed. Accordingly, the fundamental waves stably change to the second harmonic waves.
- A reflection efficiency is increased as the grating intervals of the gratings become shorter because the number of the gratings is increased. Therefore, a minute periodic structure is required of the wavelength changing device to enhance the reflection efficiency. Where an averaged refractive index N of the periodic structure and the grating order m of the periodic structure are defined, the regular intervals Λ1 of the gratings satisfy an equation Λ1 = m*λf/(2N). Specifically, when the wavelength λf=800 nm and the averaged refractive index N=2 are given, the regular intervals Λ1 in a first order grating (m=1) is 0.2 µm. The value 0.2 µm is very small. Also, the reflection efficiency is increased as the height of the gratings is large because a reflecting area in each of the gratings is increased.
- In the present invention, because the soft material is utilized as a material of the gratings. the grating intervals of the gratings can be easily shortened. For example, in cases where a photoresist material is utilized as a material of the gratings, the gratings can be minutely patterned according to an interference-exposure process. Therefore, the periodic structure of a low grating order such as a first grating order or a second grating order can be easily manufactured with high accuracy. Also, because any etching process in which the soft material is etched by reactive ions is not required to minutely pattern the soft material, the optical waveguide is not damaged by the reactive ions. In addition, the gratings can be deeply formed because the soft material has high workability.
- Accordingly, the wavelength changing device according to the present invention can have superior reflection efficiency. Also, a transmission loss is lowered.
- In addition, because the gratings are covered by the covering layer, the covering layer functions as a protector for protecting the gratings from the atmosphere. Therefore, the superior reflection efficiency can be maintained for a long time.
- The present invention also provides a laser beam generating apparatus, including a diffracting device as described above in which a part of fundamental waves of the coherent light is changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers, and the laser beam generating apparatus further comprising:
- a semiconductor laser for radiating a beam of coherent light consisting of the fundamental waves to an incident end of the optical waveguide;
- a dielectric film arranged on the optical waveguide for confining the second harmonic waves produced in the alternate rows to prevent the second harmonic waves spread outside the optical waveguide; and
- a plurality of grating elements periodically arranged on the dielectric film at grating intervals in the propagation direction of the coherent light for reflecting the fundamental waves spreading outside the dielectric film toward the semiconductor laser to fix the wavelength of the coherent light radiated from the semiconductor laser.
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- When a driving current supplied to a semiconductor laser or an ambient temperature varies, a refractive index of material of the semiconductor laser also varies. As a result, the wavelength of coherent light radiated from the semiconductor laser generally changes. For example, a first driving current supplied to the semiconductor laser to read information stored in an optical disk greatly differs from a second driving current supplied to the semiconductor laser to write information in the optical disk. Therefore, a focal point of an objective lens utilized to converge the coherent light at the optical disk conventionally changes each time a reading operation and a writing operation are exchanged to each other. To avoid adverse influence of the change in the focal point, the adjustment of the focal point is conventionally required.
- In the above configuration, because a part of coherent light radiated from the semiconductor laser is fed back to the semiconductor laser by the function of the diffracting device, the wavelength of the coherent light radiated from the semiconductor laser is fixed. Therefore, even though the driving current or the ambient temperature varies, the focal point does not change. Therefore, the exchange between the reading operation and the writing operation can be quickly performed without any adjustment of the focal point. Accordingly, lens material having a large wavelength dispersion coefficient can be utilized in the laser beam generating apparatus. Also, a lens having a large numerical aperture (NA) can be utilized.
- The present invention also provides a laser beam generating apparatus including a diffracting device as described above in which a part of fundamental waves of the coherent light is changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers, and the laser beam generating apparatus further comprising:
- a semiconductor laser for radiating a beam of coherent light consisting of the fundamental waves to an incident end of the optical waveguide;
- a plurality of second inverted polarization layers polarized in the second polarization direction and periodically arranged in the substrate at grating intervals in the propagation direction to periodically cross the optical waveguides; and another part of the fundamental waves being reflected in the periodic structure toward the semiconductor laser to fix the wavelength of the coherent light radiated from the semiconductor laser.
-
- In the above configuration, because the diffraction gratings are formed in the diffracting device by applying the electric potential to the electrode, the wavelength of the coherent light radiated from the semiconductor laser is fixed. Therefore, even though a driving current supplied to the semiconductor laser or an ambient temperature varies, the coherent light having a fixed wavelength can be obtained in the laser beam generating apparatus.
- Optionally according to the laser beam generating apparatus of the invention, the ratio of a width of each of the gratings in the propagation direction to the regular intervals Λ of the gratings is in a first range from 0.05 to 0.24 or in a second range from 0.76 to 0.95 on condition that an equation Λ = m*λ/(2N), m=2 where the symbol λ is a wavelength of the coherent light and the symbol N is an effective refractive index of the optical waveguide, a part of the coherent light being reflected by the gratings to the semiconductor laser to fix the wavelength of the coherent light radiated from the semiconductor laser, and the coherent light of which the wavelength is fixed being output from the output side of the optical waveguide.
- In the above configuration, because the ratio of the width of the gratings to the regular intervals Λ of the gratings is in the first range from 0.05 to 0.24 or in the second range from 0.76 to 0.95, the fundamental waves are efficiently reflected by the gratings to the semiconductor laser without being absorbed into the substrate even though the DBR condition Λ = m*λ/(2N), m=2 is satisfied. Therefore, the wavelength of the fundamental waves radiated from the semiconductor laser are fixed even though a driving current supplied to the semiconductor laser or an ambient temperature varies. Accordingly, the fundamental waves having a fixed wavelength can be obtained in the laser beam generating apparatus.
- The present invention also provides a laser beam generating apparatus including a diffracting device as described above and further comprising
- a semiconductor laser for radiating a beam of coherent light consisting of fundamental waves to an incident end of the optical waveguide;
- a second optical waveguide arranged in the substrate in parallel to the optical waveguide for transmitting the fundamental waves radiated from the semiconductor laser to the optical waveguide electro-magnetically coupled to the second optical waveguide; and an electrode arranged on the second optical waveguide for inducting electric field penetrating through the second optical waveguide to reduce a refractive index of the second optical waveguide, a part of the fundamental waves of the coherent light being changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers in cases where any electric field is not induced in the second optical waveguide.
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- In the above configuration, a part of fundamental waves radiated from the semiconductor laser are reflected by the gratings to be fed back to the semiconductor laser. Therefore. the wavelength of the fundamental waves is fixed. Also. a remaining part of the fundamental waves transmit through the first optical waveguide on which the electrode is arranged.
- In cases where no electric potential is applied to the electrode, the first and second optical waveguides are coupled to each other according to the electro-magnetic coupling. Therefore, the fundamental waves are transferred to.the second optical waveguide and are changed to second harmonic waves in the alternate rows. Thereafter, the second harmonic waves are output.
- In contrast, in cases where an electric potential is applied to the electrode, the refractive index of the first optical waveguide is reduced. Therefore, the fundamental waves cannot be transferred to the second optical waveguide. That is, no second harmonic wave is output.
- Accordingly, when the electric potential applied to the electrode is modulated, the output power of the second harmonic waves is also modulated.
- The present invention will be further explained in the following description of exemplary embodiments and the accompanying drawings, in which:
- Fig. 1 is a diagonal view of a conventional diffracting device having a distributed Bragg reflector;
- Figs 2A to 2D are cross-sectional views of the diffracting device shown in Fig. 1, showing a manufacturing method of the diffracting device;
- Fig. 3 graphically shows transmitting and reflecting characteristics of the diffracting device shown in Fig. 1;
- Fig. 4 is a cross-sectional view of another conventional diffracting device:
- Fig. 5 is a constitutional view of a conventional shorter wavelength laser beam generating apparatus:
- Fig. 6 is a constitutional view of another conventional shorter wavelength laser beam generating apparatus in which a conventional wavelength changing device of Shinozaki is arranged;
- Fig. 7 graphically shows a relationship between a reflection efficiency of fundamental waves and the grating order substantially formed in the wavelength changing device shown in Fig. 6 and another relationship between a radiating loss of the fundamental waves and the grating order;
- Fig. 8A is a diagonal perspective view of a diffracting device described for reference;
- Fig. 8B is a cross-sectional view of the diffracting device shown in Fig. 8A to illustrate intensity distribution of coherent light transmitting through an optical waveguide.
- Figs. 9A to 9D are diagonal views showing a manufacturing method of the diffracting device shown in Fig. 8A;
- Fig. 10 is a constitutional view of an optical system for measuring optical characteristics of the diffracting device shown in Fig. 8A;
- Fig. 11 shows a relationship between the intensity of reflected coherent light and the wavelength of the coherent light and another relationship between the intensity of transmitting coherent light and the wavelength of the coherent light, those relationships being measured with the optical system shown in Fig. 10;
- Fig. 12 shows the comparison in optical characteristics
between the diffracting device shown in Fig. 8 and
samples - Fig. 13A is a diagonal perspective view of a second diffracting device described for reference;
- Fig. 13B is a cross-sectional view of the diffracting device shown in Fig. 13A to illustrate intensity distribution of coherent light transmitting through an optical waveguide;
- Fig. 14A is a diagonal perspective view of a diffracting device according to a modification of the second reference device
- Fig. 14B is a cross-sectional view of the diffracting device shown in Fig. 14A to illustrate intensity distribution of coherent light transmitting through an optical waveguide;
- Fig. 15 is a diagonal perspective view of a third wavelength changing device described for reference;
- Fig. 16A is a diagonal perspective view of a wavelength changing device according to a further reference device;
- Fig. 16B is a cross-sectional view of the wavelength changing device shown in Fig. 16A;
- Fig. 17 is a constitutional view of an optical system for examining optical characteristics of the wavelength changing device shown in Fig. 16A;
- Fig. 18, 19 graphically show the relation between the intensity of second harmonic waves P2 and a temperature of a semiconductor laser shown in Fig. 17, depending on the ambient temperature;
- Fig. 20A is a diagonal perspective view of a wavelength changing device according to a further reference device;
- Fig. 20B is a cross-sectional view of the wavelength changing device shown in Fig. 20A;
- Fig. 21 shows influence of the positional relation between a wave reflecting region and a wavelength changing region on optical characteristics of a wavelength changing device shown in Fig. 20B;
- Fig. 22 is a cross-sectional view of a wavelength changing device according to a further reference device;
- Fig. 23 graphically shows relation between a ratio W1/Λ1 and a transmission loss for fundamental waves and relation between a ratio W1/Λ1 and a reflection efficiency for fundamental waves;
- Fig. 24A is a diagonal perspective view of a wavelength changing device according to a further reference device;
- Fig. 24B is a cross-sectional view of the wavelength changing device shown in Fig. 24A;
- Fig. 25 is an enlarged cross-sectional view of a wave reflecting region in the wavelength changing device shown in Fig. 24A, intensity distributions of fundamental waves P1 and second fundamental waves P2 being explanatorily shown;
- Fig. 26 graphically shows relation between the wavelength of fundamental waves P1 and regular intervals Λ1 of the gratings in the wavelength changing device shown in Fig. 24A;
- Fig. 27 graphically shows relation between the intensity of harmonic waves P2 and the thickness D1 of a dielectric passivation film in the wavelength changing device shown in Fig. 24A;
- Fig. 28 is a diagonal view of a wavelength changing device according to a further reference device;
- Fig. 29 is an enlarged plan view of an optical waveguide of the wavelength changing device shown in Fig. 28, intensity distributions of fundamental waves P1 and second fundamental waves P2 being explanatorily shown;
- Fig. 30 is a diagonal view of a wavelength changing device according to a first embodiment of the present invention:
- Fig. 31(a) is an enlarged cross-sectional view of an optical waveguide covered by a first electrode in a wavelength changing device shown in Fig. 30. explanatorily showing electric field induced in inverted and non-inverted polarization layers;
- Fig. 31(b) graphically shows variation of a refractive index of the inverted and non-inverted polarization layers shown in Fig. 31(a);
- Fig. 32 graphically shows relation between applied electric potential and intensity of second fundamental waves output from an optical waveguide shown in Fig. 30;
- Fig. 33 graphically shows intensity of second fundamental waves output from an optical waveguide shown in Fig. 30, showing stabilization of the intensity of second fundamental waves;
- Fig. 34 is a constitutional view of a shorter wavelength laser beam generating apparatus according to a second embodiment of the present invention;
- Fig. 35 is a diagonal view of a shorter wavelength laser beam generating apparatus described for reference;
- Fig. 36 graphically shows relation between wavelength of fundamental waves and electric potential applied to a first electrode shown in Fig. 35;
- Fig. 37 is a cross-sectional view of a second laser beam generating apparatus described for reference;
- Figs. 38A to 38C are cross-sectional views showing a manufacturing method of the diffracting device shown in Fig. 37;
- Fig. 39 graphically shows relation between driving current supplied to a semiconductor laser and wavelength λc of coherent light radiated from the semiconductor laser shown in Fig. 37;
- Fig. 40 is a constitutional view of a third laser beam generating apparatus described for reference;
- Fig. 41A is a diagonal perspective view of a diffracting device shown in Fig. 40;
- Fig. 41B is a cross-sectional view of the diffracting device shown in Fig. 41A;
- Fig. 42 is a constitutional view of an optical information processing apparatus described for reference;
- Fig. 43 is a constitutional view of a shorter wavelength laser beam generating apparatus according to a third embodiment of the present invention;
- Fig. 44 is a constitutional view of an optical information processing apparatus according to the third embodiment of the present invention;
- Fig. 45 is a constitutional view of a fourth laser beam generating apparatus described for reference;
- Fig. 46 is a diagonal view of an integrated optical circuit described for reference;
- Fig. 47 graphically shows relation between driving current supplied to a semiconductor laser and wavelength λc of coherent light radiated from the semiconductor laser shown in Fig. 46; and
- Fig. 48 is a diagonal view of an integrated optical circuit according to a fourth embodiment of the present invention.
-
- A first reference apparatus is described with reference to Figs. 8 to 12.
- Fig. 8A is a diagonal perspective view of a first reference diffracting device. Fig. 8B is a cross-sectional view of the diffracting device shown in Fig. 8A to illustrate intensity distribution of coherent light transmitting through an optical waveguide.
- As shown in Figs. 8A. 8B, a diffracting
device 51 comprises a LiTaO3 substrate 52, anoptical waveguide 53 extending in a central upper side of the LiTaO3 substrate 52 for transmitting coherent light consisting of 860 nm. wavelength fundamental waves P1 from anincident end facet 53a to anoutput end facet 53b, a grating 54 periodically arranged on the LiTaO3 substrate 52 at first regular intervals Λ1 for reflecting the coherent light transmitting through theoptical waveguide 53, and acovering layer 55 covering thegratings 54 for protecting thegrating 54. - The LiTaO3 substrate 52 is formed by cutting out LiTaO3 crystal in a direction perpendicular to a Z-axis defined as [001]-direction in Miller indices. Therefore, the LiTaO3 substrate 52 (or -Z plate) has an upper surface defined as (001)-plane in Miller indices.
- The
optical waveguide 53 is formed by exchanging a part of Li+ ions of the LiTaO3 substrate 52 for H+ ions. Therefore, an effective refractive index of theoptical waveguide 53 is slightly higher than that of the LiTaO3 substrate 52 to confine a large part of the coherent light in theoptical waveguide 53. A width of theoptical guide 53 is 4 µm, and a depth of theoptical guide 53 is 2 µm. - The
gratings 54 are made of a photoresist material (manufactured by Shiply Ltd., and product No. AZ1400-17). Because the photoresist material is a radiation-sensitive compound and a soft material having high workability, the grating 54 can be minutely formed by exposing the photoresist material to exposing light and developing the photoresist material to remove exposed areas of the photoresist material. That is, the photoresist can be minutely patterned to form thegratings 54 without being etched by reactive ions. An effective refractive index Nl of thegratings 54 is equal to 1.5. Also, thegratings 54 have the same size as one another, and thegratings 54 cross over theoptical waveguide 53 to reflect the coherent light distributed over theoptical waveguide 53. - The
covering layer 55 is made of Ta2O5 of which an effective refractive index N2 is equal to 2.0. Because thecovering layer 55 is arranged between thegratings 54, the change of the effective refractive index is generated in a periodic structure consisting of thegratings 54 and thecovering layer 55. Therefore, the periodic structure is equivalent to a diffraction grating, and the periodic structure functions as the distributed Bragg reflector on condition that the DBR condition is satisfied. Also, because the refractive difference in the effective refractive index between thegratings 54 and thecovering layer 55 is large, the reflection efficiency of the periodic structure for the coherent light becomes large. Therefore, the combination of thegratings 54 made of the photoresist and thecovering layer 55 made of Ta2O5 effectively functions as the diffraction grating. - As shown in Fig. 8B, the coherent light transmitting through the
optical waveguide 53 is also distributed in the periodic structure and thesubstrate 52. - The reflection efficiency of the periodic structure is generally increased in proportion to the height of the
gratings 54 and the refractive difference in the effective refractive index. Also, because the grating order of thegratings 55 is proportional to regular intervals Λ1 of thegratings 55, the reflection efficiency is inversely proportional to the regular intervals Λ1 of thegratings 55. - Next, a manufacturing method of the diffracting
device 51 is described. - Figs. 9A to 9D are diagonal views showing a manufacturing method of the diffracting
device 51 shown in Fig. 8. - As shown in Fig. 9A, a
Ta film 56 is deposited on the LiTaO3 substrate 52 with a sputtering method, and a stripe hole 56a is formed on a central surface of the LiTaO3 substrate 52 according to a photolithography process. The width of the stripe hole 56a is 4 µm, and the length of the stripe hole 56a is 5 mm. Thereafter, the LiTaO3 substrate 52 is immersed in a pyrophosphoric acid (H4P2O7) solution for fourteen minutes at a temperature of 260 °C to exchange a part of Li+ ions of the LiTaO3 substrate 52 not deposited by theTa film 56 for H+ ions, according to a proton-exchange process. Thereafter, the LiTaO3 substrate 52 is annealed for sixty seconds at a temperature of 420 °C to form theoptical waveguide 53 having a superior transmission efficiency. Thereafter, theTa film 56 is taken away. The width of theoptical waveguide 53 is 4µm, and the depth is 2 µm. A guided wave loss of theoptical waveguide 53 for the coherent light is only 1.0 dB/cm. Thereafter, both end facets of theoptical waveguide 53 are optically polished to form theincident end facet 53a and theoutput end facet 53b. - Thereafter, as shown in Fig. 9B, diluted photoresist 57 (AZ1400-17) is coated over the LiTaO3 substrate 52 and the
optical waveguide 53. The thickness of thephotoresist 57 coated is 0.2 µm. Thereafter, grating pattern areas of thephotoresist 57 are exposed to 0.4416 nm wavelength light radiated from He-Cd laser according to an interference-exposure process to transfer a grating pattern to thephotoresist 57. Therefore, thephotoresist 57 exposed becomes soluble in a developer solution. Thereafter, thephotoresist 57 is immersed in the developer solution to develop thephotoresist 57. Therefore, the grating patterned areas of thephotoresist 57 exposed are removed. Therefore, photoresist portions formed in the grating pattern are arranged on theoptical waveguide 53. Thereafter, the photoresist portions are cured so that thegratings 54 crossing over theoptical waveguide 53 are formed, as shown in Fig. 9C. The regular intervals Λ1 of thegratings 54 periodically arranged are set to 0.4 µm, a grating height is set to 0.2 µm, a ratio of the grating width W1 to the regular intervals Λ1 is set to 0.23, and a total length of thegratings 54 in a propagation direction of the coherent light is set to 5 mm. - Thereafter, as shown in Fig. 9D, Ta2O5 is deposited over the
gratings 54 with a sputtering method to form thecovering layer 55. The height of thecovering layer 55 deposited on thegratings 54 is 0.3 µm in thickness. Therefore, the coveringlayer 55 protects thegratings 54 from the atmosphere. - Next, characteristic estimation results of the diffracting
device 51 are described. - To estimate optical characteristics of the diffracting
device 51, anoptical system 61 is prepared as shown in Fig. 10. Theoptical system 61 comprises a Ti-Al2O3 laser 62 for radiating coherent light of which the wavelength is variable ahalf mirror 63 for dividing the coherent light, an optically convergingsystem 64 for converging the coherent light at theincident end facet 53a of the diffractingdevice 51, the diffractingdevice 51. acollimator lens 65 for collimating the coherent light which transmits through theoptical waveguide 53 without being reflected by thegratings 54, a transmittinglight detector 66 for detecting the intensity of the coherent light transmitting through theoptical waveguide 53, and a reflectedlight detector 67 for detecting the intensity of the coherent light reflected by thegratings 54. - In the above configuration, coherent light radiated from the Ti-Al2O3 laser 62 transmits through the
half mirror 63 and is converged at theincident end facet 53a of theoptical wave guide 53 by the optically convergingsystem 64. Thereafter, the coherent light transmits through theoptical waveguide 53. In this case, because a part of coherent light is distributed in thecovering layer 55 as shown in Fig. 8B, the part of coherent light is reflected by the coveringlayer 55. Therefore, the coherent light reflected is returned to theincident end facet 53a of theoptical waveguide 53 and transmits through the optically convergingsystem 64. Thereafter, the reflected coherent light is divided by thehalf mirror 63 and is detected by the reflectedlight detector 67. In contrast, the coherent light not reflected by the coveringlayer 55 is radiated from theoutput end facet 53b of theoptical waveguide 53 and is collimated by thecollimator lens 66. Thereafter, the coherent light not reflected (called transmitting coherent light) is detected by the transmittinglight detector 66. - When the wavelength of the coherent light radiated from the Ti-Al2O3 laser 62 agrees with a distributed Bragg reflector wavelength (called DBR wavelength hereinafter), the intensity of the reflected cohelent light is remarkably increased. The DBR wavelength λ is determined by the regular intervals Λ1 of the
gratings 54 and an effective refractive index N (=2.15) of theoptical waveguide 53. That is, a DBR condition is designated by an equation λ = (Λ1*2N)/m. Here the symbol m (=2) denotes a grating number. - Fig. 11 shows a relationship between the intensity of the reflected coherent light and the wavelength of the coherent light and another relationship between the intensity of the transmitting coherent light and the wavelength of the coherent light.
- As shown in Fig. 11, the DBR wavelength is 860 nm, and a diffraction efficiency (or a reflection efficiency) for the coherent light is about 50 %. Here the diffraction efficiency is defined as an intensity ratio of the reflected coherent light detected by the reflected
light detector 67 to the coherent light coupled to theoptical waveguide 53. Because a theoretical value of the diffraction efficiency is 60 %, theexperimental value 50 % of the diffraction efficiency is high and superior to that obtained in a conventional diffracting device. The reason why the experimental value is superior is as follows. Thegratings 53 is formed by developing thephotoresist 57 without being etched so that theoptical waveguide 53 is not damaged by any reactive ions. Also, because thegratings 54 having a superior uniformity is formed by exposing thephotoresist 57 to the 0.4416 nm wavelength light according to the interference-exposure process, thegratings 54 can be formed in superior uniformity in size. - Also, a full width at half maximum (FWHM) indicating the dependence of the reflected coherent light on the wavelength is only 0.03 nm. Because the full width at half maximum of the reflected coherent light also indicates the uniformity in the shape of the
gratings 54, the small value of the full width at half maximum proves that thegratings 54 is formed in superior uniformity. - Next, a comparison in optical characteristics between diffracting devices manufactured by conventional methods and the diffracting
device 51 is described. - A
sample 1 equivalent to the conventional diffractingdevice 11 shown in Fig. 1 is prepared, and asample 2 equivalent to the conventional diffractingdevice 21 shown in Fig. 4 is prepared. - A manufacturing method of the
sample 1 is as follows. After theTa film 56 shown in Fig. 9A is taken away, theoptical waveguide 53 is directly etched by reactive ions according to a dry etching method, and a plurality of gratings are formed in theoptical waveguide 53 to manufacture a first conventional diffracting device (sample 1). Regular intervals of the gratings are 0.4 µm, and the depth is 0.1 µm. A manufacturing method of thesample 2 is as follows. After theTa film 56 shown in Fig. 9A is taken away, Ta2O5 is deposited on theoptical waveguide 53 and the LiTaO3 substrate 52 with a sputtering method. The thickness of a Ta2O5 film deposited is 0.1 µm. Thereafter, a resist is coated on the Ta2O5 film with a thickness of 0.2 µm, and the resist is exposed to 0.4416 nm wavelength light radiated from a He-Cd laser according to an interference-exposure process to form a grating pattern in the resist. Thereafter, the resist exposed is developed and formed in the grating pattern. Thereafter, the Ta2O5 film is etched by reactive ions through the patterned resist functioning as a mask in a dry-etching apparatus, so that a plurality of gratings formed of the Ta2O5 film etched are arranged on theoptical waveguide 53. Regular intervals of the gratings are 0.4 µm, and the depth is 0.1 µm. - Fig. 12 shows the comparison in optical characteristics between the diffracting
device 51 and thesamples - To manufacture the
sample 1, complicated processes which are performed with two superimposed masks shown in Fig. 2A to 2D are required. Therefore, the uniformity in the shape of the gratings is inferior. Also, because the reactive ions are injected into the optical waveguide to etch the optical waveguide, the surface of the optical waveguide becomes rough. Therefore, a guided wave loss of the coherent light transmitting through the optical waveguide is increased. As a result, the reflection efficiency (or diffraction efficiency) of the conventional diffracting device (sample 1) is decreased to 5 %, and the transmission efficiency of the conventional diffracting device (sample 1) is decreased to 10 %. Accordingly, thesample 1 is not useful for practical use. - Also, to manufacture the
sample 2, the Ta2O5 film is etched by the reactive ions. Therefore, the surface of the optical waveguide is damaged by the reactive ions. As a result, a guided wave loss of the coherent light transmitting through the optical waveguide is increased, and the optical characteristics of the conventional diffracting device (sample 2) deteriorate. - In contrast, because the
photoresist 57 is not etched by any reactive ion in the diffractingdevice 51, theoptical waveguide 53 is not damaged by any reactive ion. Therefore, a scattering loss of the coherent light is lowered so that a guided wave loss of the coherent light is lowered to 1 dB/cm. Also, because thecovering layer 55 is deposited to cover thegratings 54 to protect thegratings 54 from the atmosphere, thegratings 54 are not degraded. Therefore, a reflection efficiency of the diffractingdevice 51 can be stably maintained with high degree. - In addition, any complicated processes performed with two superimposed masks are not required to manufacture the diffracting
device 51, thegratings 54 can be reliably formed in the same size, and the regular intervals Λ1 of thegratings 54 are the same. - Also, in cases where the coating of the diluted
photoresist 37 is thickened, thegratings 54 can be deeply formed by sufficiently exposing thephotoresist 57 to the 0.4416 nm wavelength light. Therefore, a theoretical diffraction efficiency is increased, * and an actual diffraction efficiency can be enhanced. - Accordingly, because the
gratings 54 made of thephotoresist 57 are deeply formed with high accuracy without damaging theoptical waveguide 53 in the diffractingdevice 51, the lowered guided wave loss and the high reflection efficiency for the coherent light transmitting through theoptical waveguide 53 can be obtained in the diffractingdevice 51. - Also, because the refractive index of the grating 54 is sufficiently small as compared with that of the
covering layer 55, the grating order can be decreased. In other words, the number ofgratings 54 arranged in a regular length can be increased by decreasing the regular intervals Λ1 of thegratings 54. Therefore, the reflection efficiency can be increased. - In the device described above, the
photoresist 57 made of AZ1400-17 manufactured by Shiply Ltd. is utilized as the material of thegratings 54. However, the material of thegratings 54 is not limited to AZ1400-17. That is, any photoresist is applicable on condition that the refractive index of the photoresist is sufficiently small as compared with that of thecovering layer 55. - Also, a burning type metallic oxide film is appliable in place of the
photoresist 57. Specifically, a burned SiO2 film obtained by burning SiO2 is useful because an etching rate of the burned SiO2 film is large. That is, a deep shape of gratings can be easily forced by etching the burned SiO2 film through a resist functioning as a mask. - Also, the position of the
gratings 54 is not limited on theoptical waveguide 53. That is, thegratings 54 adjacent to theoptical waveguide 53 is useful as the distributed Bragg reflector. For example, thegratings 54 positioned under theoptical waveguide 53 or thegratings 54 positioned at a side of theoptical waveguide 53 is useful. - Also, the covering
layer 55 is made of Ta2O5 in the first embodiment because the effective refractive index of Ta2O5 is so large and because a transmitting loss of the coherent lightis low in Ta2O5. However, the material of thecovering layer 55 is not limited to Ta2O5. That is. a material having an effective refractive index differing from that of thegratings 54 is applicable on condition that a transmitting loss for the coherent light is low. For example, TiO2 and SiN can be applied in place of Ta2O5. Specifically, in cases where a material of which the effective refractive index is over 1.8 is utilized as thecovering layer 55, the diffraction efficiency of the diffractingdevice 51 can be enhanced. - Also, the LiTaO3 substrate 52 has the upper surface indicated by the (001)-plane. However, a LiTaO3 substrate having an upper surface indicated by a (100)-plane or a (010) plane can be applied.
- A second reference device is described with reference to Figs. 13A, 13B.
- Fig. 13A is a diagonal perspective view of a second reference diffracting device. Fig. 13B is a cross-sectional view of the diffracting device shown in Fig. 13A to illustrate intensity distribution of coherent light transmitting through an optical waveguide.
- As shown in Fig. 13A, a diffracting
device 71 comprises the LiTaO3 substrate 52, anoptical waveguide 72 extending in a central upper side of the LiTaO3 substrate 52 for transmitting coherent light consisting of 860 nm wavelength fundamental waves P1 from anincident end facet 72a to anoutput end facet 72b, thegratings 54 periodically arranged on the LiTaO3 substrate 52 for reflecting the coherent light transmitting through theoptical waveguide 72, and thecovering layer 55. - The
optical waveguide 72 is formed according to the proton-exchange process in the same manner as in theoptical waveguide 53. Also, as shown in Fig. 13B, a depth D1 of theoptical waveguide 72 positioned in the neighborhood of theincident end facet 72a (a non-reflecting region) is larger than a depth D2 of theoptical waveguide 72 positioned in the neighborhood of theoutput end facet 72b (a reflecting region) on which thegratings 54 are periodically arranged at the regular intervals Λ1. Therefore, the intensity distribution of the coheren light shifts towards the periodic structure consisting of thegratings 54 and thecovering layer 55 at the reflecting region (the depth D2) of theoptical waveguide 72, as compared with that at the non-reflecting region (the depth D1) of theoptical waveguide 72. - The reflection efficiency of the periodic structure is generally proportional to the overlapping degree of the distributed coherent light and the periodic structure. In the diffracting
device 71, because the depth D2 of theoptical waveguide 72 is narrowed at the reflecting region, the overlapping degree is increased at the reflecting region. Therefore, the reflection efficiency for the coherent light is enhanced. - The optical characteristics of the diffracting
device 71 are described with reference to Fig. 12. - The depth D2 of the
optical waveguide 72 is 2 µm, the width of theoptical waveguide 72 is 4 µm, the regular intervals Λ1 of thegratings 54 is 0.4 µm, and the height (or the depth) of thegratings 54 is 0.2 µm, in the same manner as in the first reference device. Also, the depth D1 of theoptical waveguide 72 is 1.8 µm. In this case, the reflection efficiency is 60 %, the transmission efficiency is 20 %, the guided wave loss is 2db/cm, and the full width at half maximum (FWHM) is 0.05 nm. Therefore, the reflection efficiency is enhanced as compared with in the first reference device. In contrast, the guided wave loss is slightly increased because theoptical waveguide 72 is narrowed. - In the second reference device, the position of the
gratings 54 is not limited on theoptical waveguide 53. That is, thegratings 54 adjacent to theoptical waveguide 72 is useful as the distributed Bragg reflector. In this case, a cross-sectional area of theoptical waveguide 72 in the reflecting region is smaller than that in the non-reflecting region to increase the overlapping degree between the distributed coherent light and the periodic structure. - Next, a modification of the second reference device is described with reference to Fig. 14.
- Fig. 14A is a diagonal perspective view of a diffracting device according to a modification of the second reference device. Fig. 14B is a cross-sectional view of the diffracting device shown in Fig. 14A to illustrate intensity distribution of coherent light transmitting through an optical waveguide.
- As shown in Figs. 14A, B, a diffracting device =73 comprises the LiTaO3 substrate 52, an
optical waveguide 74 extending in a central upper side of the LiTaO3 substrate 52 for transmitting coherent light consisting of 860 nm wavelength fundamental waves P1 from anincident end facet 74a to anoutput end facet 74b, and thecovering layer 55. - A plurality of grooves are digged on the surface of the
optical waveguide 74 to form a plurality of gratings 74c periodically arranged in a propagation direction of the coherent light. A depth D3 of theoptical waveguide 74 positioned at a non-reflecting region adjacent to theincident end facet 74a is larger than a depth D4 of theoptical waveguide 74 positioned at a reflecting region on which the gratings 74c are periodically arranged. Therefore. the intensity distribution of the coherent light is shifted towards the periodic structure consisting of the gratings 74c and thecovering layer 55 at the reflecting region of theoptical waveguide 74, as compared with that at the non-reflecting region of theoptical waveguide 74. - Next, a manufacturing method of the diffracting
device 73 is described. - The
optical waveguide 74 is initially formed in the upper side of thesubstrate 52 in a step shape according to the proton-exchange process in the same manner as in the first reference device. The depth D3 of theoptical waveguide 74 is 2.4 µm, and the depth D4 of theoptical waveguide 74 is 2.2 µm. Thereafter, a thin Ti film is deposited on thesubstrate 52 and theoptical waveguide 74. Thereafter, a photoresist is spin coated on the Ti film. Thereafter, the photoresist is exposed to interference light according to an interference-exposure process, and the photoresist is developed to remove exposed areas of the photoresist. Therefore, a periodic grating pattern is transferred to the photoresist. Thereafter, the Ti film is periodically etched at regular intervals Λ1=0.4 µm by reactive ions generated in an atmosphere of CCl2F2 gas according to a reactive ion etching to transfer the periodic grating pattern of the photoresist to the Ti film. Thereafter, the patterned film is used as a mask, and theoptical waveguide 74 is etched by reactive ions generated in an atmosphere of CF4 according to the reactive ion etching. Therefore, the gratings 74c are periodically formed. The height of the gratings 74c is 0.1 µm, and the regular intervals Λ1 of the gratings 74c is 0.4 µm. Thereafter, bothend facets optical waveguide 74 are polished. Finally, Ta2O5 is deposited on theoptical waveguide 74 and thesubstrate 52 with a thickness of 0.3 µm to form thecovering layer 55. - Because the refractive index of Ta2O5 is 2.0 which is near to that of the
optical waveguide 74, a roughed surface of theoptical waveguide 74 is uniformed by the deposition of Ta2O5. Therefore, a scattering loss of the coherent light is extremely reduced. Also, even though the thickness of theoptical waveguide 74 is thinned by the ion etching, the guided wave loss of the coherent light is not increased because the depth of theoptical waveguide 74 is deeper than that of theoptical waveguide 72. - The optical characteristics of the diffracting
device 73 are described with reference to Fig. 12. - The reflection efficiency is increased to 70 %, the transmission efficiency is decreased to 5 %, and the guided wave loss is maintained at 2db/cm.is 0.05 nm, as compared with in the diffracting
device 71. - The position of the
gratings 54 is not limited on theoptical waveguide 72. That is, thegratings 54 positioned at peripheries of theoptical waveguide 72 is useful as the distributed Bragg reflector. For example, thegratings 54 positioned under theoptical waveguide 72 or thegratings 54 positioned at a side of theoptical waveguide 72 is useful. - A third reference device is described with reference to Fig. 15.
- Fig. 15 is a diagonal perspective view of a third reference wavelength changing device.
- As shown in Fig. 15, a diffracting device 76 comprises the LiTaO3 substrate 52, the
optical waveguide 53, thegratings 54, and acovering layer 77 covering thegratings 54 for protecting thegratings 54. - The
covering layer 77 is made of burning type metallic oxide such as TiO2. In detail, metallic oxide such as TiO2 is held in solution in a solvent. Thereafter, the metallic oxide held in solution is coated on the LiTaO3 substrate 52 and theoptical waveguide 53, and the metallic oxide coated is heated at a temperature of 200 to 500 °C. Therefore, the solvent is vaporized, and a burned metallic oxide film is formed as thecovering layer 77. - Because any vacuum system including a sputtering apparatus is not required to form the burned metallic oxide film as the
covering layer 77, the diffracting device 76 can be easily manufactured. - In cases where the
gratings 54 is made of burned SiO2, the total length of thegratings 54 in the propagation direction is 1 mm, and the periodic structure is equivalent to a first grating order (m=1), the reflection efficiency is 25%. - A further reference device is described with reference to Figs. 16 to 19.
- Fig. 16A is a diagonal perspective view of a wavelength changing device. Fig. 16B is a cross-sectional view of the wavelength changing device shown in Fig. 16A.
- As shown in Fig. 16A, a
wavelength changing device 81 comprises asubstrate 82 made of non-linear optical crystal LiTaO3 which is dielectrically polarized in a lower direction, anoptical waveguide 83 extending in a central upper side of thesubstrate 82 for transmitting coherent light consisting of 860 nm wavelength fundamental waves P1 from anincident end facet 83a to anoutput end facet 83b, a plurality of inverted-polarization layers 84 arranged in an upper side of thesubstrate 82 at second regular intervals Λ2 to cross theoptical waveguide 83, thegratings 54 periodically arranged on theoptical waveguide 83 at the first regular intervals Λ1, and thecovering layer 55. - The
gratings 54 are positioned in the neighborhood of theoutput end facet 83b. - The
substrate 82 is formed by cutting out LiTaO3 crystal in a direction perpendicular to a Z-axis defined as [001]-direction in Miller indices. Therefore, the LiTaO3 substrate 82 (or -Z plate) has an upper surface defined as (001)-plane in Miller indices. - The
optical waveguide 83 is formed at a depth of 2 µm by exchanging a part of Li+ ions of thesubstrate 82 for H+ ions. Therefore, an effective refractive index of theoptical waveguide 83 is slightly higher than that of thesubstrate 82 to confine large parts of the fundamental waves P1 in theoptical waveguide 83. A width of theoptical waveguide 83 is 4 µm. - The inverted-
polarization layers 84 dielectrically polarized in an upper direction is formed by heating the surface of thesubstrate 82 at a temperature of about 1050 °C after the surface of thesubstrate 82 is shield by a patterned mask according to a lift-off process. Each of non-inverted polarization layers 85 is positioned between the inverted polarization layers 84 as shown in Fig. 16B. - Fig. 17 is a constitutional view of an optical system for examining optical characteristics of the
wavelength changing device 81. - As shown in Fig. 17, an
optical system 87 is provided with asemiconductor laser 88 for radiating fundamental waves P1 of which the wavelength is variable, a convergingsystem 89 for converging the fundamental waves P1, and thewavelength changing device 81. - In the above configuration, fundamental waves P1 radiated from the
semiconductor laser 88 are converged at theincident end facet 83a of theoptical waveguide 83 by the convergingsystem 89, and the fundamental waves P1 transmits through alternate rows of the inverted-polarization and non-inverted polarization layers 84, 85. At this time, the fundamental waves P1 are changed to second harmonic waves P2 of which a wavelength λh is half of a wavelength λf of the fundamental waves P1 in the inverted-polarization layer 84. Thereafter, the phase of the second harmonic waves P2 is inverted while transmitting through the inverted-polarization layer 84. Thereafter, the second harmonic waves P2 transmit through thenon-inverted polarization layer 85. In this case, because the polarization direction of thenon-inverted polarization layer 85 is opposite to the inverted-polarization layer 84, the second harmonic waves P2 transmitting through thenon-inverted polarization layer 85 are amplified without attenuating. Therefore, a part of the fundamental waves P1 are changed to the second harmonic waves P2, and the second harmonic waves P2 are amplified in theoptical waveguide 83 on condition that the quasi-phase condition indicated by the equation Λ2 = λf/{2*(N2ω-Nω)} is satisfied. Here the symbol N2ω is a refractive index of theoptical waveguide 83 for the second harmonic waves P2 and the symbol Nω is a refractive index of theoptical waveguide 83 for the fundamental waves P1. In cases where the wavelength λf of the fundamental waves P1 is 860 nm, the quasi-phase condition is satisfied. Thereafter, the second harmonic waves P2 are radiated from theoutput end facet 83b of theoptical waveguide 83. Accordingly, when the pumping power of the fundamental waves P1 radiated from thesemiconductor laser 88 is 70 mW to couple the fundamental waves P1 to theoptical waveguide 83 at a power of 42 mW (or a coupling efficiency is 60 %), the intensity of the second harmonic waves P2 radiated from thewavelength changing device 81 is 3 mW. - In contrast, the fundamental waves P1 not changed to the second harmonic waves P2 are reflected in the periodic structure consisting of the
gratings 54 and thecovering layer 55 in the same manner as in the first embodiment. That is, in cases where the wavelength λf of the fundamental waves P1 is 860 nm, the periodic structure functions as the distributed Bragg reflector because the DBR condition Λ1 = mλf/2N (m=2) is satisfied. Thereafter, the fundamental waves P1 reflected is radiated from theincident end facet 83a and is fed back to thesemiconductor laser 88. Therefore, the wavelength λf of the fundamental waves P1 is fixed to 860 nm even though an ambient temperature or an injecting current to thesemiconductor laser 88 fluctuates. Also, even though the fundamental waves P1 reflected at theincident end facet 83a of theoptical waveguide 83 is fed back to thesemiconductor laser 88, the wavelength λf of the fundamental waves P1 is fixed to 860 nm. Accordingly, the intensity of the second harmonic waves P2 obtained in thewavelength changing device 81 can be stabilized regardless of the fluctuation of the ambient temperature or the injecting current to thesemiconductor laser 88. - The stabilization of the intensity of the second harmonic waves P2 is measured with the
optical system 87. - Fig. 18 graphically shows the relation between the intensity of the second harmonic waves P2 and a temperature of the
semiconductor laser 88 depending on the ambient temperature. - As shown in Fig. 18, even though a temperature of the
semiconductor laser 88 is changed in a range from 10 to 30 °C, the fluctuation of the intensity of the second harmonic waves P2 is restrained within 5 % of a maximum intensity. - Accordingly, because the
gratings 54 are uniformly formed without any damage caused by reactive ions to reflect the fundamental waves P1 not changed to the second harmonic waves P2 at high reflection efficiency and at low guided wave loss in the periodic structure consisting of thegratings 54 and thecover layer 55, the second harmonic waves P2 can be stably obtained in thewavelength changing device 81 regardless of the fluctuation of the ambient temperature or the injecting current to thesemiconductor laser 88. - Also, because the satisfaction of the quasi-phase condition Λ2 = λf/{2*(N2ω-Nω)} is achieved regardless of the satisfaction of the DBR condition Λ1 = mλf/2N, the wavelength λf of the fundamental waves P1 can be arbitrarily selected. In other words, the wavelength λh(=λf/2) of the second harmonic waves P2 can be arbitrarily selected.
- Next, a modification of the wavelength changing device shown in Figs. 16 to 19 is described.
- The depth of the
optical waveguide 83 is shallowed to 1.8 µm to increase the overlapping of the fundamental waves P1 and the periodic structure consisting of thegratings 54 and thecover layer 55. In this case, as is described in the second reference device, the reflection efficiency (or the diffraction efficiency) in thewavelength changing device 81 is enhanced. - The stabilization of the intensity of the second harmonic waves P2 measured with the
optical system 87 is shown in Fig. 19. As shown in Fig. 19, even though a temperature of thesemiconductor laser 88 is changed in a wide range from 10 to 50 °C, the fluctuation of the intensity of the second harmonic waves P2 is restrained within 5 % of a maximum intensity. - Accordingly, because the intensity of the 860 nm wavelength fundamental waves P1 fed back to the
semiconductor laser 88 is increased, the wavelength of the fundamental waves P1 radiated from thesemiconductor laser 88 can be reliably fixed even though the temperature of thesemiconductor laser 88 fluctuates in a wide range from 10 to 50 °C. As a result, the range in which the second harmonic waves P2 is stably obtained in thewavelength changing device 81 can be widened. In contrast, the intensity of the second harmonic waves P2 is slightly decreased. - In the device just described, the
substrate 82 is made of pure LiTaO3 material. However, the material of thesubstrate 82 is not limited to the pure LiTaO3 material. That is, it is applicable that LiTaO3 material doped with MgO, Nb, Nd, or the like be utilized to make thesubstrate 82. Also, it is applicable that LiNbO3 material be utilized to make thesubstrate 82. In addition, because KTiOPO4 is a highly non-linear optical crystal material, it is preferred that KTiOPO4 be utilized to make thesubstrate 82. In this case, because a refractive index of KTiOPO4 is a small value of about 1.7, the fundamental waves P1 can be reflected at high efficiency by the periodic structure consisting of thegratings 54 and thecover layer 55. - Also, the
optical waveguide 83 is formed according to the proton-exchange process. However, it is applicable that theoptical waveguide 83 be formed by diffusing Ti or Nb into thesubstrate 82. Also, it is applicable that theoptical waveguide 83 be formed by injecting ions such as Ti, Nb or the like into thesubstrate 82. - A further reference device is described with reference to Figs. 20 to 21.
- Fig. 20A is a diagonal perspective view of a wavelength changing device. Fig. 20B is a cross-sectional view of the wavelength changing device shown in Fig. 20A.
- As shown in Fig. 20A, a
wavelength changing device 91 comprises the LiTaO3 substrate 82, anoptical waveguide 92 extending in a central upper side of thesubstrate 82 for transmitting coherent light consisting of 860 nm wavelength fundamental waves P1 from anincident end facet 92a to anoutput end facet 92b, a plurality of inverted-polarization layers 93 arranged in an upper side of thesubstrate 82 at second regular intervals Λ2 to cross theoptical waveguide 92, thegratings 54 periodically arranged on theoptical waveguide 92 which is positioned in the neighborhood of theincident end facet 92a (called a wave reflecting region 94), and thecovering layer 55. - The
optical waveguide 92 is formed at a depth of 2 µm by exchanging a part of Li+ ions of thesubstrate 82 for H+ ions. Therefore, an effective refractive index of theoptical waveguide 92 is slightly higher than that of thesubstrate 82 to confine large parts of the fundamental waves P1 in theoptical waveguide 92. A width of theoptical waveguide 92 is 4 µm. - The inverted-
polarization layers 93 dielectrically polarized in an upper direction is formed in the same manner as the inverted-polarization layers 84. The inverted-polarization layers 93 is not arranged in the neighborhood of theincident end facet 92a but arranged in the neighborhood of theoutput end facet 92b (called a wavelength changing region 95). Each of non-inverted polarization layers 96 is positioned between the inverted polarization layers 93 as shown in Fig. 20B. - A total length of a series of
gratings 54 in a propagation direction of the fundamental waves P1 is lmm, and the periodic structure of thegratings 54 and thecovering layer 55 is formed in a first grating order of the DBR periodic structure. That is, Λ1 = λf/(2N)is satisfied. Here the symbol Λ1 (=0.2 µm) is regular intervals of thegratings 54, the wavelength λf of the fundamental waves is 860 nm, and the symbol N (=2.15) is an effective refractive index of theoptical waveguide 92. - In the above configuration, fundamental waves P1 radiated from the
semiconductor laser 88 shown in Fig. 17 are converged at theincident end facet 92a of theoptical waveguide 92 and transmits through thewave reflecting region 94. In this case, a first radiation mode for the fundamental waves P1 is generated in thewave reflecting region 94. Therefore, the fundamental waves P1 are reflected by the periodic structure consisting of thegratings 54 and thecovering layer 55 without changing the fundamental waves P1 to second harmonic waves P2. Thereafter, the fundamental waves P1 not reflected are changed to the second harmonic waves P2 in thewavelength changing region 95. At this time, because no distributed Bragg reflector is provided in thewavelength changing region 95, any radiation mode for the fundamental waves P1 is not generated. Therefore, the fundamental waves P1 are not reflected any more. Thereafter, the second harmonic waves P2 is radiated from theoutput end facet 92b of theoptical waveguide 92. - The first radiation mode for the fundamental waves P1 generated in the
wave reflecting region 94 is equivalent to a second radiation mode for second harmonic waves P2 because the wavelength λh of the second harmonic waves P2 is half of that of the fundamental waves P1. Therefore, in cases where the second harmonic waves P2 exist, the second harmonic waves P2 couple to a first radiation mode for the second harmonic waves P2. Therefore, the second harmonic waves P2 are led into thesubstrate 82 and the outside so that a radiation loss of the second harmonic waves P2 is increased. However, because the second harmonic waves P2 are not generated in thewave reflecting region 94, any second harmonic wave P2 is not lost. - Accordingly, because the
wave reflecting region 94 is arranged in the front of thewavelength changing region 95, the second harmonic waves P2 do not transmit through thewave reflecting region 94. Therefore, the second harmonic waves P2 can be obtained at high efficiency in thewavelength changing device 81. - Also, though the
gratings 54 made of thephotoresist material 57 function as an absorber, the second harmonic waves P2 are not absorbed by thegratings 54 because thewave reflecting region 94 is arranged in the front of thewavelength changing region 95. - Also, because the satisfaction of the quasi-phase condition Λ2 = λf/{2*(N2ω-Nω)} is achieved regardless of the satisfaction of the DBR condition Λ1 = mλf/2N, the wavelength λf of the fundamental waves P1 can be arbitrarily selected. In other words, the wavelength λh of the second harmonic waves P2 can be arbitrarily selected.
- The influence of the positional relation between the
regions - As shown in Fig. 21, in cases where the
wave reflecting region 94 is arranged in the rear of thewavelength changing region 95, a radiation loss of the second harmonic waves P2 is increased to 50 % so that the intensity of the second harmonic waves P2 radiated from theoutput end facet 92b is decreased to 3 mW. In contrast, in cases where thewave reflecting region 94 is arranged in the front of thewavelength changing region 95, no radiation loss of the second harmonic waves P2 is obtained so that the intensity of the second harmonic waves P2 radiated from theoutput end facet 92b is increased to 5 mW. - Also, when the pumping power of the fundamental waves P1 radiated from the
semiconductor laser 88 is 60 mW to couple the fundamental waves P1 to theoptical waveguide 92 at a power of 40 mW (or a coupling efficiency is 66 %), a reflection efficiency for the fundamental waves P1 is 15 % so that the wavelength of the fundamental waves P1 is completely fixed to 860 nm. - Next, a modification of the wavelength changing device shown in Figs. 20 to 21 is described.
- The depth of the
optical waveguide 92 is shallowed to 1.8 µm to increase the overlapping of the fundamental waves P1 and the periodic structure consisting of thegratings 54 and thecover layer 55. In this case, as is described in the second embodiment, the reflection efficiency (or the diffraction efficiency) in thewavelength changing device 81 is enhanced to 25 %. Also, the stabilization of the intensity of the second harmonic waves P2 is restrained within 3 % of a maximum intensity even though a temperature of thesemiconductor laser 88 is changed in a wide range from 10 to 50 °C. - Accordingly, the second harmonic waves P2 can be stably obtained at high efficiency.
- A third embodiment is described with reference to Figs. 22 to 23.
- Fig. 22 is a cross-sectional view of a wavelength changing device according to a further reference device.
- As shown in Fig. 22, a
wavelength changing device 97 comprises the LiTaO3 substrate 82, theoptical waveguide 92 having a depth of 2 µm, a plurality of inverted-polarization layers 98 arranged in an upper side of thesubstrate 82 at second regular intervals Λ2, thegratings 54 periodically arranged on theoptical waveguide 92 which is positioned in the neighborhood of theincident end facet 92a, and thecovering layer 55. - The inverted-
polarization layers 98 dielectrically polarized in au upper direction is formed in the same manner as the inverted-polarization layers 84. The inverted-polarization layers 98 is not arranged in the neighborhood of theincident end facet 92a but arranged in the neighborhood of theoutput end facet 92b (called a wavelength changing region 99). - A total length of a series of
gratings 54 in a propagation direction of the fundamental waves P1 is 1mm, and the periodic structure of thegratings 54 and thecovering layer 55 is formed in a second grating order of the DBR periodic structure. That is, the DBR condition Λ1 = 2*λf/(2N) is satisfied. Here the symbol Λ1 (=0.4 µm) is first regular intervals of thegratings 54, the wavelength λf, of the fundamental waves is 860 nm, and the symbol N (=2.15) is an effective refractive index of theoptical waveguide 92. In this case, a ratio of a width W1 of thegratings 54 to the regular intervals Λ1 of thegratings 54 is set to 0.23. The ratio W1/Λ1 = 0.23 is determined according to following reason. - A relation between the ratio W1/Λ1 and the radiation loss of the fundamental waves P1 and another relation between the ratio W1/Λ1 and the reflection efficiency for the fundamental waves P1 are shown in Fig. 23.
- Though the reflection efficiency for the fundamental waves P1 is maximized at a first ratio W1/Λ1 = 0.25 and a second ratio W1/Λ1 0.75, the radiation loss of the fundamental waves P1 is large in the range from the first ratio W1/Λ1 = 0.25 to the second ratio W1/Λ1 = 0.75. Therefore, in cases where the first ratio W1/Λ1 = 0.25 is adopted, the radiation loss of the fundamental waves P1 to be changed to the second harmonic waves P2 becomes large so that the intensity of the second harmonic waves P2 is considerably decreased. Therefore, the ratio W1/Λ1 = 0.23 is adopted.
- In the above configuration, 860 nm wavelength fundamental waves P1 radiated from the
semiconductor laser 88 shown in Fig. 17 are radiated to theoptical waveguide 92. Therefore, first parts of the fundamental waves P1 are fed back to thesemiconductor 88, second parts of the fundamental waves P1 are changed to second harmonic waves, and remaining parts of the fundamental waves P1 are lost. in the same manner as in the device shown in Fig. 20. - Optical characteristics of the
wavelength changing device 97 are as follows. When the pumping power of the fundamental waves P1 radiated from thesemiconductor laser 88 is 70 mW to couple the fundamental waves P1 to theoptical waveguide 92 at a power of 42 mW (or a coupling efficiency is 60 %), a reflection efficiency for the fundamental waves P1 is 20 %, and a radiation loss of the fundamental waves P1 is 5 %. Also, the intensity of the harmonic waves P2 is 3 mW. - Accordingly, even though the periodic structure of the
gratings 54 and thecovering layer 55 is formed in the second grating order, the fundamental waves P1 can be reflected at high efficiency, and the second harmonic waves P2 can be obtained at high efficiency. - Also, because the periodic structure formed in the second grating order is easily manufactured as compared with that formed in the first grating order, the
wavelength changing device 97 can be easily manufactured. - Also, because the satisfaction of the quasi-phase condition Λ2 = λf/{2*(N2ω-Nω)} is achieved regardless of the satisfaction of the DBR condition Λ1 = mλf/2N, the wavelength λf of the fundamental waves P1 can be arbitrarily selected. In other words, the wavelength λh of the second harmonic waves P2 can be arbitrarily selected.
- The ratio W1/Λ1 of the periodic structure is not limited to 0.23. That is, it is applicable that the ratio W1/Λ1 of the periodic structure range from 0.05 to 0.24. Also, it is applicable that the ratio W1/Λ1 of the periodic structure range from 0.76 to 0.95.
- Because shorter wavelength laser light is stably obtained by changing the fundamental waves P1 to the harmonic waves P2 in the
wavelength changing device 97, a shorter wavelength laser beam generating apparatus in which a shorter wavelength laser beam is generated at high power can be manufactured in a small size. Therefore, the apparatus can be utilized as a laser beam source of a photo disk and a laser printer. That is, a storage capacity of the photo disk can be greatly increased, and a small sized photo disk apparatus can be manufactured. - A further reference device is described with reference to Figs. 24 to 27.
- Fig. 24A is a diagonal perspective view of a wavelength changing device. Fig. 24B is a cross-sectional view of the wavelength changing device shown in Fig. 24A.
- As shown in Figs. 24A, 24B, a
wavelength changing device 101 comprises thesubstrate 82, theoptical waveguide 83, the inverted-polarization layers 84 periodically arranged at the second regular intervals Λ2, adielectric passivation film 102 deposited on thesubstrate 82 and theoptical waveguide 83 for protecting theoptical waveguide 83, and a plurality ofgratings 103 periodically arranged on thedielectric passivation film 102 at the first regular intervals Λ1. - The depth of the
optical waveguide 83 is 2 µm, and the width of theoptical waveguide 83 is 4 µm. Also, the second regular intervals Λ2 of the inverted-polarization layers 84 are about 3.6 µm. Therefore, when the wavelength λf of the fundamenal waves P1 is 860 nm, the quasi-phase matching condition Λ2 = λf/{2*(N2ω-Nω)} is satisfied. Here the symbol N2ω is a refractive index of theoptical waveguide 83 for the second harmonic waves P2, and the symbol Nω is a refractive index of theoptical waveguide 83 for the fundamental waves P1. - The
dielectric passivation film 102 is made of SiO2, and the thickness D1 of thefilm 102 is 0.06 µm. A refractive index of thedielectric passivation film 102 is 0.5. - The
gratings 103 are made of Ta2O5, and the size of thegratings 103 is the same as that of thegratings 54 shown in Fig. 16A. Also, the first regular intervals Λ1 of thegratings 103 are set to 1.98 µm, and a total length of a series ofgratings 103 is 5 mm in a propagation direction of the fundamental waves P1. In addition, thegratings 103 are not arranged in the neighborhood of theincident end facet 83a (called a wavelength changing region 104) but arranged in the neighborhood of theoutput end facet 83b (called a wave reflecting region 105). - The inverted-polarization layers 84 are arranged in not only the
wavelength changing region 104 but also thewave reflecting region 105. and a total length of a series oflayers 84 is 15 mm in the propagation direction of the fundamental waves P1. - In the above configuration, 860 nm wavelength fundamental waves P1 radiated from the
semiconductor laser 88 are radiated to theincident end facet 83a of theoptical waveguide 83. Thereafter, a part of the fundamental waves P1 are changed to 430 nm wavelengthsecond fundamental waves P2 in thewavelength changing region 104. Therefore, the fundamental waves P1 not changed and the second harmonic waves P2 transmit through theoptical waveguide 83 of thewave reflecting region 105. In thewave reflecting region 105, the fundamental waves P1 are not only changed to the second harmonic waves P2 but also selectively reflected by thegratings 103. In contrast, the second harmonic waves P2 are radiated from theoutput end facet 83b of theoptical waveguide 83 without being reflected by thegratings 103. The reason that the fundamental waves P1 are selectively reflected by thegratings 103 is described with reference to Fig. 25. - Fig. 25 is an enlarged cross-sectional view of the
wave reflecting region 105 in thewavelength changing device 101 shown in Fig. 24A, intensity distributions of the fundamental waves P1 and the second fundamental waves P2 being explanatorily shown. - The intensity distribution in a depth direction of coherent light transmitting through the
optical waveguide 83 generally depends on the wavelength of the coherent light. As shown in Fig. 25, an intensity distribution of the fundamental waves P1 spreads out to thedielectric passivation film 102 more than that of the harmonic waves P2. In detail, the intensity of the fundamental waves P1 is reduced to 1/e2 of a maximum intensity of the waves P1 at a distance of 0.1 µm from an upper surface of theoptical waveguide 83, and the intensity of the second harmonic waves P2 is reduced to 1/e2 of a maximum intensity of the waves P2 at a distance of 0.04 µm from an upper surface of theoptical waveguide 83. Therefore, because thedielectric passivation film 102 having the thickness D1=0.06 µm is arranged on theoptical waveguide 83, the intensity distribution of the second harmonic waves P2 does not substantially spread out to thegratings 103. That is, the second harmonic waves P2 are not reflected by thegratings 103. In contrast, because the intensity distribution of the fundametal waves P1 spreads out to thegratings 103, the fundamental waves P1 are selectively reflected by thegratings 103. - Thereafter, the fundamental waves P1 reflected by the
gratings 103 are fed back to thesemiconductor laser 88 in cases where the DBR condition Λ1 = mλf/2N is satisfied. Here a refractive index N of theoptical waveguide 83 is 2.17. Relation between the wavelength λf of the fundamental waves P1 and the regular intervals Λ1 of thegratings 103 is shown in Fig. 26. - As shown in Fig. 26, the 860 nm wavelength fundamental waves P1 are reflected by the
gratings 103 functioning as the distributed Bragg reflector at the grating order m=10 because the first regular intervals Λ1 of thegratings 103 is 1.98 µm. Accordingly, even though thegratings 103 are arranged in the rear of thewavelength changing region 104, the second harmonic waves P2 are not reflected by thegratings 103 because thedielectric passivation film 102 is arranged between a series ofgratings 103 and theoptical waveguide 83. Therefore, the position of thegratings 103 is not limited to the front of thewavelength changing region 104 so that thewavelength changing device 101 can be arbitrarily manufactured. Also, the second fundamental waves P2 can be obtained at high efficiency. - Also, because the fundamental waves P1 are changed to the second harmonic waves P2 in the
wave reflecting region 105, the second fundamental waves P2 can be moreover obtained at high efficiency. - Also, because the satisfaction of the quasi-phase condition Λ2 = λf/{2*(N2ω-Nω)} is achieved regardless of the satisfaction of the DBR condition Λ1 = mλf/2N, the wavelength λf of the fundamental waves P1 can be arbitrarily selected. In other words, the wavelength λh of the second harmonic waves P2 can be arbitrarily selected.
- Optical characteristics of the
wavelength changing device 101 are as follows. When the pumping power of the fundamental waves P1 radiated from thesemiconductor laser 88 is 200 mW to couple the fundamental waves P1 to theoptical waveguide 83 at a power of 120 mW (or a coupling efficiency is 60 %), the intensity of the harmonic waves P2 is 7 mW. - Relation between the output power of the harmonic waves P2 and the thickness D1 of the
dielectric passivation film 102 is described with reference to Fig. 27. - As shown in Fig. 27, in cases where the thickness D1 of the
dielectric passivation film 102 is increased to over 0.1 µm, the wavelength λf of the fundamental waves P1 radiated from thesemiconductor laser 88 is not fixed because the fundamental waves P1 are not reflected by thegratings 103. As a result, the second fundamental waves P2 cannot be stably obtained. Also, in cases where the thickness D1 of thedielectric passivation film 102 is decreased to less than 0.04 µm, the second harmonic waves P2 are scattered by thegratings 103. Therefore, as the thickness D1 of thedielectric passivation film 102 is decreased, the output power of the second harmonic waves P2 is decreased. - Accordingly, in cases where the thickness D1 of the
dielectric passivation film 102 ranges from 0.04 to 1.0 µm. the output power of the second harmonic waves P2 is equal to a maximum value of 7 mW. In general, the range of the thickness Dl is inversely proportional to a refractive index n of thedielectric passivation film 102. Therefore, in cases where a product of the reflactive index n and the thickness D1 ranges from 0.06 to 0.15 (0.06 < nD1(µm) < 0.15), the output power of the second harmonic waves P2 is maximized. - In the device shown in Figs. 24 to 27, the
dielectric passivation film 102 is made of SiO2. However, the material of thedielectric passivation film 102 is not limited. That is, any dielectric material can be utilized to make thedielectric passivation film 102 on condition that coherent light transmitting through the dielectric material is not substantially absorbed nor scattered. - Also, the
substrate 82 is made of pure LiTaO3 material. However, the material of thesubstrate 82 is not limited to the pure LiTaO3 material. That is, it is applicable that LiTaO3 material doped with MgO, Nb, Nd, or the like be utilized to make thesubstrate 82. Also. it is applicable that LiNbO3 material or LiTa(1-x)NbxO3 (0 ≦ x ≦ 1) be utilized to make thesubstrate 82. In addition, because KTiOPO4 is a highly non-linear optical crystal material. it is preferred that KTiOPO4 be utilized to make thesubstrate 82. In this case, because a refractive index of KTiOPO4 is a small value of about 1.7, the fundamental waves P1 can be reflected at high efficiency by thegratings 103. - A further reference device is described with reference to Figs. 28 to 29.
- Fig. 28 is a diagonal perspective view of a wavelength changing device.
- As shown in Fig. 28, a
wavelength changing device 106 comprises thesubstrate 82, theoptical waveguide 83, the inverted-polarization layers 84 periodically arranged at the second regular intervals Λ2, and a plurality ofgratings 107 periodically arranged on both sides of theoptical waveguide 107 at the first regular intervals Λ1. - The depth of the
optical waveguide 83 is 2 µm, and the width of theoptical waveguide 83 is 4 µm. Also. the second regular intervals Λ2 of the inverted-polarization layers 84 are about 3.6 µm. Therefore, when the wavelength λf of the fundamenal waves P1 is 860 nm, the quasi-phase matching condition Λ2 = λf/{2*(N2ω-Nω)} is satisfied. - The
gratings 107 are made of Ta2O5, and the height of thegratings 107 is 0.1 µm. Thegratings 107 are not arranged Just on theoptical waveguide 83 but arranged on thesubstrate 82 which is positioned on the both sides of theoptical waveguide 83. Also, the first regular intervals Λ1 of thegratings 106 are set to 1.98 µm, and a total length of a series ofgratings 106 is 5 mm in a propagation direction of the fundamental waves P1. In addition, thegratings 106 are not arranged in the neighborhood of theincident end facet 83a but arranged in the neighborhood of theoutput end facet 83b. The DBR condition Λ1= mλf/(2N) (m=10) is satisfied. - The inverted-polarization layers 84 are arranged in not only the neighborhood of the
incident end facet 83a but also the neighborhood of theoutput end facet 83b, and a total length of a series oflayers 84 is 15 mm in the propagation direction of the fundamental waves P1. - In the above configuration, 860 nm wavelength fundamental waves P1 radiated from the
semiconductor laser 88 are radiated to theincident end facet 83a of theoptical waveguide 83. Thereafter, a part of the fundamental waves P1 are changed to 430 nm wavelength second fundamental waves P2 in the neighborhood of theincident end facet 83a. Therefore, the fundamental waves P1 not changed and the second harmonic waves P2 transmit through theoptical waveguide 83 to the neighborhood of theoutput end facet 83b. In the neighborhood of theoutput end facet 83b, the fundamental waves P1 are not only changed to the second harmonic waves P2 but also selectively reflected by thegratings 107. In contrast, the second harmonic waves P2 are radiated from theoutput end facet 83b of theoptical waveguide 83 without being reflected by thegratings 107. The reason that the fundamental waves P1 are selectively reflected by thegratings 107 is described with reference to Fig. 29. - Fig. 29 is an enlarged plan view of the
optical waveguide 83 of thewavelength changing device 106 shown in Fig. 28, intensity distributions of the fundamental waves P1 and the second fundamental waves P2 being explanatorily shown. - The intensity distribution in a width direction (a Y-direction) of coherent light transmitting through the
optical waveguide 83 generally depends on the wavelength of the coherent light. As shown in Fig. 29, an intensity distribution of the fundamental waves P1 spreads outside theoptical waveguide 83. In contrast, an intensity distribution of the second harmonic waves P2 spreads within theoptical waveguide 83. In detail, the width of the intensity distribution of the fundamental waves P1 is 4.3 µm so that the fundamental waves P1 are reflected by thegratings 107. In contrast, the width of the intensity distribution of the second harmonic waves P2 is 3.9 µm so that the second harmonic waves P2 are not reflected by thegratings 107. Therefore, the fundamental waves P1 are selectively reflected by thegratings 107. - Accordingly, even though the
gratings 107 are arranged in the rear of thewavelength changing region 104, the second harmonic waves P2 are not reflected by thegratings 107 because thegratings 107 are not arranged just on theoptical waveguide 83 but arranged on both sides of theoptical waveguide 83. Therefore, the position of thegratings 107 is not limited to the front of thewavelength changing region 104 so that thewavelength changing device 106 can be arbitrarily manufactured. Also, the second fundamental waves P2 can be obtained at high efficiency. - Also, because the fundamental waves P1 are changed to the second harmonic waves P2 in the neighborhood of the
output end facet 83b, the second fundamental waves P2 can be moreover obtained at high efficiency. - Also, even though any dielectric film is not arranged between the
optical waveguide 83 and a series ofgratings 107, the second harmonic waves P2 can be prevented from being scattered. - Also, because the satisfaction of the quasi-phase condition Λ2 = λf/{2*(N2ω-Nω)} is achieved regardless of the satisfaction of the DBR condition Λ1 = mλf/2N, the wavelength λf of the fundamental waves P1 can be arbitrarily selected. In other words, the wavelength λh of the second harmonic waves P2 can be arbitrarily selected.
- A first embodiment is described with reference to Figs. 30 to 33.
- Fig. 30 is a diagonal perspective view of a wavelength changing device according to a first embodiment of the present invention.
- As shown in Fig. 30, a
wavelength changing device 108 comprises thesubstrate 82, theoptical waveguide 83, inverted-polarization layers 84 periodically arranged at second regular intervals Λ2 in the neighborhood of theincident end facet 83a, inverted-polarization layers 109 periodically arranged at first regular intervals Λ1 in the upper side of thesubstrate 82 in the neighborhood of theoutput end facet 83b, afirst electrode 110a and asecond electrode 110b arranged on the inverted-polarization layers 109 for applying an electric field to the inverted-polarization layers 109, and anelectric source 111 for applying a positive electric potential to thefirst electrode 110a and applying a negative electric potential to thesecond electrode 110b. - The depth of the
optical waveguide 83 is 2 µm, and the width of theoptical waveguide 83 is 4 µm. Also, the second regular intervals Λ2 of the inverted-polarization layers 84 are about 3.6 µm. Therefore, when the wavelength λf of the fundamenal waves P1 is 860 nm, the quasi-phase matching condition Λ2 = λf/{2*(N2ω-Nω)} is satisfied. - The inverted-
polarization layers 109 are formed to cross theoptical waveguide 83 according to the proton exchange process in the same manner as in the inverted-polarization layers 84. A width W1 of each inverted-polarization layer 109 is set to 1.7 µm. The regular intervals Λ1 of the inverted-polarization layers 109 is 1.98 µm, and a total length of a series oflayers 109 is 5 mm in a propagation direction of the fundamental waves P1. Also, a total length of a series oflayers 84 is 10 mm in the propagation direction. - The
first electrode 110a is arranged just on theoptical waveguide 83 and both sides of theoptical waveguide 83. Therefore, as shown in Fig. 29, even though fundametal waves P1 transmitting through theoptical waveguide 83 spread out to thesubstrate 82, all of the fundamental waves P1 transmit under thefirst electrode 110a. In contrast, any fundamental wave P1 does not transmit under thesecond electrode 110b. Therefore, in cases where a positive electric potential is applied to thefirst electrode 110a, electric field directed to a lower direction penetrates through the inverted-polarization layers 109 and non-inverted polarization layers 112 arranged between thelayers 109. As a result, the refractive index of the inverted and non-inverted polarization layers 109, 112 is changed by an electro-optic effect. - The electro-optic effect is described in detail with reference to Figs. 31(a), 31(b).
- Fig. 31(a) is an enlarged cross-sectional view of the
optical waveguide 83 covered by thefirst electrode 110a in thewavelength changing device 108 shown in Fig. 30, explanatorily showing electric field induced in the inverted and non-inverted polarization layers 109, 112, and Fig. 31(b) graphically shows variation of the refractive index of the inverted and non-inverted polarization layers 109, 112. - The electro-optic effect is defined as a phenomenon in which the refractive index of a crystal material is changed by electric field in dependence on an electro-optic constant. Because the inverted and non-inverted polarization layers 109, 112 are made of non-linear optical crystal LiNbO3 having an upper surface defined as (001)-plane in the Miller indices, the electro-optic constant in the Z-axis direction ([001] direction in the Miller devices) is large. Also, the increase or decrease of the refractive index in the inverted-
polarization layers 109 is the reverse of that in the non-inverted polarization layers 112 because the polarization directions of thelayers polarization layers 109 varies by a value -Δn. As a result, a diffraction grating (or a distributed Bragg reflector) caused by a periodic distribution of the refractive index is formed by a periodic structure consisting of the inverted and non-inverted polarization layers 109, 112. - In the above configuration, 860 nm wavelength fundamental waves P1 radiated from the
semiconductor laser 88 are converged at theincident end facet 83a of theoptical waveguide 83. Thereafter, a part of the fundamental waves P1 are changed to 430 nm wavelength second fundamental waves P2 by alternate rows of the inverted and non-inverted polarization layers 84, 85 in the neighborhood of theincident end facet 83a. Therefore, the fundamental waves P1 not changed and the second harmonic waves P2 transmit through theoptical waveguide 83 to the neighborhood of theoutput end facet 83b. In the neighborhood of theoutput end facet 83b, the fundamental waves P1 are selectively reflected by the inverted and non-inverted polarization layers 109, 112 because the periodic structure of the inverted and non-inverted polarization layers 109, 112 functions as the distributed Bragg reflector. In contrast, the second harmonic waves P2 are radiated from theoutput end facet 83b of theoptical waveguide 83 without being reflected by thelayers - When an electric potential of 50 V is applied to the
first electrode 110a, the variation value Δn of the refractive index becomes about 10-4. The variation value Δn is proportional to the electric potential applied to thefirst electrode 110a. Also, when an electric potential more than 10 V is applied to thefirst electrode 110a, a reflection efficiency becomes about 10 % so that the wavelength λf of the fundamental waves P1 radiated from thesemiconductor laser 88 can be stably fixed. For example, when the electric potential V1 applied to thefirst electrode 110a is 10 V, the wavelength λf of the fundamental waves P1 reflected in the periodic structure is 860 nm. Therefore, when the electric potential is periodically applied to thefirst electrode 110a, the output power of the second harmonic waves P2 is periodically changed. A maximum output power of the second harmonic waves P2 is 4 mW, and a quenching ratio for the second harmonic waves P2 is -30 dB. - Next, the control of the wavelength λf in the fundamental waves P1 reflected in the periodic structure of the inverted and non-inverted polarization layers 109, 112 is described.
- When an electric potential V1 is applied to the
first electrode 110a, the refractive index of the inverted-polarization layers 109 varies by the value -Δn(V1) depending on the value V1, and the refractive index of the non-inverted polarization layers 112 varies by the value Δn(V1). Therefore, an averaged variation ΔN of the refractive index in the periodic structure becomes ΔN(V1) = {Δn*(Λ1-W1) - Δn*W1}/Λ. When the electric potential Vl(t) applied to thefirst electrode 110a changes with time t, the averaged variation ΔN(V1) also changes with the time t. Because the DBR condition is indicated by the equation Λ1 = mλf/(2N), the wavelength λf of the fundamental waves P1 reflected in the periodic structure is formulated by an equation λf = 2*Λ1(N + ΔN)/m when the electric potential Vl(t) is applied to thefirst electrode 110a. Here the symbol N denotes the effective refractive index of theoptical waveguide 83 on condition that no electric potential is applied to thefirst electrode 110a. Therefore, when a modulated electric potential Vl(t) is applied to thefirst electrode 110a, the wavelength λf of the fundamental waves P1 reflected in the periodic structure is controlled. In this case, because the QPM condition is satisfied when the wavelength λf of the fundamental waves P1 is equal to 860 nm, the output power of the second harmonic waves P2 is modulated. - Optical characteristics of the
wavelength changing device 108 are described. When a pumping power of the fundamental waves P1 radiated from thesemiconductor laser 88 is 100 mW to couple the fundamental waves P1 to theoptical waveguide 83 at a power of 50 mW (or a coupling efficiency is 50 %), the output power of the harmonic waves P2 is modulated when the electric potential V1 applied to thefirst electrode 110a is modulated in the range from 0 to 20 V, as shown in Fig. 32. - Also, when the electric potential V1 applied to the
first electrode 110a is adjusted to keep the intensity of the second harmonic waves P2 at a maximum value, the output power of the second harmonic waves P2 can be stabilized for a long time, as shown in Fig. 33. - Accordingly, even though any grating is not arranged on the
optical waveguide 83 nor on any side of theoptical waveguide 83. a diffraction grating function as the distributed Bragg reflector can be arranged in theoptical waveguide 83. In addition. because the DBR condition Λ1 = mλf/2N can be arbitrarily changed, the second harmonic waves p2 can be modulated. - In the first embodiment, the ratio of the width W1 to the regular intervals Λ1 is not equal to 0.5 to change the averaged variation ΔN. However, in cases where the depth of the inverted-
polarization layers 109 is smaller than that of theoptical waveguide 83, the wavelength λf of the fundamental waves P1 reflected in the periodic structure can be controlled even though the ratio W1/Λ1 is equal to 0.5. That is, the intensity of the harmonic waves P2 can be modulated. - When a driving current supplied to a semiconductor laser or an ambient temperature varies, a refractive index of material of the semiconductor laser also varies. As a result, a wavelength of coherent light consisting of fundamental waves P1 radiated from the semiconductor laser generally changes. For example, a first driving current supplied to the semiconductor laser to read information stored in an optical disk greatly differs from a second driving current supplied to the semiconductor laser to write information in the optical disk. Therefore, a focal point of an objective lens utilized to converge the coherent light at the optical disk conventionally changes each time a reading operation and a writing operation is exchanged to each other. To avoid adverse influence of the change in the focal point, it is required to adjust the focal point.
- If the coherent light radiated from the semiconductor laser is fed back to the semiconductor laser by the function of the diffracting
device 51. 71, 73, or 76 or thewavelength changing device 81. 91, 97, 101, 106, or 108, the wavelength of the coherent light radiated from the semiconductor laser is fixed. Therefore, even though the driving current or the ambient temperature varies, the focal point does not change. Therefore, the exchange between the reading operation and the writing operation can be quickly performed without any adjustment of the focal point. Accordingly, lens material having a large wavelength dispersion coefficient can be utilized in a laser beam generating apparatus. Also, a lens having a large numerical aperture (NA) can be utilized. - Fig. 34 is a constitutional view of a shorter wavelength laser beam generating apparatus according to a second embodiment of the present invention.
- As shown in Fig. 34, a shorter wavelength laser
beam generating apparatus 121 comprises asemiconductor laser 122 for radiating fundamental waves P1 having 0.8 µm wavelength band, acollimator lens 123 for collimating the fundamental waves P1, afocus lens 124 for focusing the fundamental wave P1 collimated, awavelength changing device collimator lens 125 for collimating the second harmonic waves P2, abeam splitter 126 for splitting a beam of second harmonic waves P2 in two beams, adetector 127 for detecting a wavelength λh of the second harmonic waves P2 splitted by thebeam splitter 126, a plate type ofheat insulator 128 made of quartz for thermally insulating thewavelength changing device housing 129 for mounting thesemiconductor laser 122, the convergingoptical system detector 127. and theheat insulator 128. - In the above configuration, fundamental waves P1 transmitting through the
lenses optical waveguide semiconductor laser 122. Therefore, the wavelength λf of the fundamental waves P2 radiated from thesemiconductor laser 122 is fixed to 860 nm, and the wavelength λh of second harmonic waves P2 changed in theoptical waveguide collimator 125 and are splitted by thebeam splitter 126. One of beams of waves P2 is output, and another beam transmits to thedetector 127 to detect the wavelength λh of the second harmonic waves P2. - Accordingly, because the wavelength λf of the fundamental waves P1 radiated from the
semiconductor laser 122 is fixed to 860 nm, the wavelength λf of the fundamental waves P1 can be prevented from fluctuating even though an ambient temperature of thesemiconductor laser 122 or a driving current supplied to thesemiconductor laser 122 fluctuates. Therefore, the output power of the second harmonic waves P2 can be stabilized, and noises included in the second harmonic waves P2 can be reduced. The second harmonic waves P2 is output at a high value of 2 mW. - Also, because all parts of the shorter wavelength laser
beam generating apparatus 121 are packed in thehousing 129, theapparatus 121 can be manufactured in a small size. - Therefore, the
apparatus 121 can be useful to greatly increase the storage capacity of an optical disk and to manufacture the optical disk in a small size. - Fig. 35 is a diagonal view of a shorter wavelength laser beam generating apparatus described for reference.
- As shown in Fig. 35, a shorter wavelength laser beam generating apparatus 131 comprises the
semiconductor laser 122 and a wavelength changing device 132. The device 132 comprises thesubstrate 82, theoptical waveguide 83, the inverted-polarization layers 109 periodically arranged at the first regular intervals Λ1, thefirst electrode 110a, thesecond electrode 110b, and theelectric source 111. - The depth of the
optical waveguide 83 is 2 µm, and the width of theoptical waveguide 83 is 4 µm. - A width W1 of each inverted-
polarization layer 109 is set to 1.7 µm. The regular intervals Λ1 of the inverted-polarization layers 109 is 1.98 µm, and a total length of a series oflayers 109 is 5 mm in a propagation direction of the fundamental waves P1. - In the above configuration, when an electric potential is applied to the
first electrode 110a, a periodic distribution of the refractive index is formed by a periodic structure consisting of the inverted and non-inverted polarization layers 109, 112 according to the electro-optic effect, in the same manner as in the ninth embodiment. Therefore, a diffraction grating is formed by the periodic distribution and functions as the distributed Bragg reflector on condition that the DBR condition is satisfied. - Therefore. when the electric potential V1(t) applied to the
first electrode 110a is modulated, the wavelength λf of the fundamental waves P1 reflected by the periodic structure is controlled because the averaged variation ΔN(V1) = (Δn*(Λ1-W1) - Δn*W1}/Λ of the refractive index in the periodic structure is increased or decreased. Therefore, the wavelength λf of the fundamental waves P1 radiated from thesemiconductor laser 122 is controlled, as shown in Fig. 36. - Accordingly, because the wavelength λf of the fundamental waves P1 radiated from the
semiconductor laser 122 is fixed depending on the periodic structure, the output power of the second harmonic waves P2 can be stabilized, and noise included in the second harmonic waves P2 can be reduced. - In this apparatus, the ratio of the width W1 to the regular intervals Λ1 is not equal to 0.5 to change the averaged variation ΔN. However, in cases where the depth of the inverted-
polarization layers 109 is smaller than that of theoptical waveguide 83, the wavelength λf of the fundamental waves P1 reflected in the periodic structure can be controlled even though the ratio W1/Λ1 is equal to 0.5. That is, the intensity of the harmonic waves P2 can be modulated. - Fig. 37 is a cross-sectional view of a second laser beam generating apparatus described for reference.
- As shown in Fig. 37, a laser
beam generating apparatus 133 comprises aSi sub-mount 134 having a length of 4 mm, thesemiconductor laser 122 having anactive layer 122a which is mounted on the sub-mount 134, and a diffractingdevice 135 mounted upside down on the sub-mount 134. The diffractingdevice 135 comprises the LiTaO3 substrate 52, anoptical waveguide 136 having anincident taper region 137 which is arranged in an upper side of thesubstrate 52, a plurality ofgratings 138 periodically arranged at regular intervals Λ1 on theoptical waveguide 136, and apassivation film 140 for covering thegratings 138. Theactive layer 122a is positioned at the same height on the sub-mount 134 as that of theincident taper region 137. and thesemiconductor laser 122 is arranged closed to theincident taper region 137. Therefore, coherent light radiated from theactive layer 122a of thesemiconductor laser 122 is coupled to theincident taper region 137 of theoptical waveguide 136 at a short time without transmitting through any lens. - The
gratings 138 is made of Ta2O5, and the regular intervals Λ1 of thegratings 138 are 1.9 µm to satisfy the DBR condition Λ1=m*λc/(2N). Here the grating number m is 10, the wavelength λc of the coherent light is 840 nm, and the refractive index N of theoptical waveguide 144 is 2.2. - In the above configuration, a part of the coherent light coupled to the
incident taper region 137 is reflected by thegratings 138 and is fed back to theactive layer 122a of thesemiconductor laser 122. In contrast, a remaining part of the coherent light is output from anoutput end facet 136a of theoptical waveguide 136. The wavelength λc(=840 nm) of the coherent light reflected by thegratings 138 is determined to satisfy the DBR condition Λ1=10*λc/(2N) which depends on the regular interval Λ1(=1.9 µm) of thegratings 138 and the effective refractive index N(=2.2) of theoptical waveguide 136. Therefore, the wavelength λc of the coherent light radiated from thesemiconductor laser 122 is fixed. - Next, a manufacturing method of the diffracting
device 135 and the laserbeam generating apparatus 133 is described with reference to Figs. 38A to 38C. - Figs. 38A to 38C are cross-sectional views showing a manufacturing method of the diffracting
device 135 shown in Fig. 37. - The
optical waveguide 136 is manufactured by immersing thesubstrate 52 in a pyrophosphoric acid (H4P2O7) solution according to the proton-exchange process. Therefore, the coherent light can be efficiently confined in theoptical waveguide 136. Also, even though theoptical waveguide 136 is optically damaged, a transmission loss of the coherent light can remain lowered. - As shown in Fig. 9A, Ta is deposited on the entire surface of the
substrate 52 at a thickness of 20 nm according to a sputtering process. Thereafter, a Ta film deposited is patterned to form a slit shaped opening according to a photolithography process and a dry etching process. Thereafter, to form theincident taper region 137, one side of thesubstrate 52 is immersed in a pyrophosphoric acid (H4P2O7) solution for thirty minutes at a temperature of 260 °C to exchange a part of Li+ ions of the LiTaO3 substrate 52 for H+ ions, according to a proton-exchange process. Therefore, a proton-exchange layer having a thickness of 1.2 µm is formed in an upper side of thesubstrate 52 positioned Just under the slit shaped opening. Thereafter, thesubstrate 52 is thermally processed for twenty minutes at a temperature of 420 °C, so that theincident taper region 137 having a thickness of 5 µm is formed. Thereafter, to form theoptical waveguide 136, the other side of thesubstrate 52 is immersed in the pyrophosphoric acid (H4P2O7) solution for twelve minutes at a temperature of 260 °C to exchange a part of Li+ ions of the LiTaO3 substrate 52 for H+ ions, according to the protonexchange process. Therefore, another proton-exchange layer having a thickness of 0.5 µm is formed in another upper side of thesubstrate 52 positioned Just under the slit shaped opening. Thereafter, thesubstrate 52 is thermally processed for one minute at a temperature of 420 °C, so that the optical waveguide having a thickness of 1.9 µm is formed. - Thereafter, as shown in Fig. 38B, Ta2O5 is coated over both the
substrate 52 and theoptical waveguide 136 to form a Ta2O5 film 139 having a thickness of 30 nm. Thereafter, as shown in Fig. 38C, the Ta2O5 film 139 is etched in a periodic pattern according to a photolithography process and a dry etching process to form thegratings 138. The regular intervals Λ1 of thegratings 138 are 1.9 µm, so that the grating number becomes m=10. Thereafter, SiO2 is deposited on thegratings 138 according to a sputtering process to form thepassivation film 140 having a thickness of 2 µm. The height of theincident taper region 137 and the height of theactive layer 122a becomes the same as each other by adjusting the thickness of thepassivation film 140. Thereafter. both sides of theoptical waveguide 136 are polished. The length of theoptical waveguide 136 is 3 mm. - Thereafter, the
semiconductor laser 122 is bonded upside down to the sub-mount 134. Thereafter, the diffractingdevice 135 is mounted on the sub-mount 134 while attaching thepassivation film 140 to the sub-mount 134, and the diffractingdevice 135 is strictly positioned and bonded to the sub-mount 134 while thesemiconductor laser 122 radiates the coherent light so as to maximize the intensity of the coherent light radiated to theincident taper region 137 of theoptical waveguide 136. As a result, thedevice 133 is completely manufactured. - Accordingly, because an optical system such as a converging lens or a collimator lens is not utilized, the
device 133 can be manufactured in a small size. - Next, optical characteristics of the laser
beam generating apparatus 133 is described. - The reflection efficiency of the
gratings 138 is only 10 %. Though the reflection efficiency is not high, thevalue 10 % is enough to stably fix the wavelength of the coherent light radiated from thesemiconductor laser 122 because thesemiconductor laser 122 is arranged closed to the diffractingdevice 135. Also, even though the intensity of the coherent light radiated from thesemiconductor laser 122 is modulated, the wavelength of the coherent light radiated from thesemiconductor laser 122 is stably fixed because the coherent light radiated from thesemiconductor laser 122 is reflected and fed back to thesemiconductor laser 122 at a short time. - Fig. 39 graphically shows relation between a driving current supplied to the
semiconductor laser 122 and the wavelength λc of the coherent light radiated from thesemiconductor laser 122. - As shown in Fig. 39, the wavelength λc of the coherent light conventionally varies by 5 nm when the driving current changes by 50 mA. However, no variation of the wavelength λc of the coherent light is observed in the
device 133 according to the present invention. - Accordingly, because the wavelength λc of the coherent light is stably fixed, the coherent light obtained in the
device 133 can be useful. - In this apparatus, the
gratings 138 made of Ta2O5 is formed by etching the Ta2O5 film 139 according to the photolithography process and the dry etching process. However, the material of thegratings 138 is not limited to Ta2O5. Also, the manufacturing method of thegratings 138 is not limited to the dry etching process. For example, thegratings 54 shown in Fig. 8A is appliable. - Fig. 40 is a constitutional view of a third laser beam generating apparatus described for reference.
- As shown in Fig. 40, a laser
beam generating apparatus 141 comprises the Si sub-mount 134, thesemiconductor laser 122, and a diffractingdevice 142 mounted upside down on the sub-mount 134. - Fig. 41A is a diagonal perspective view of the diffracting
device 142 shown in Fig. 40. Fig. 41B is a cross-sectional view of the diffractingdevice 142 shown in Fig. 41A. - As shown in Figs. 41A, 41B, the diffracting
device 142 comprises a LiNbO3 substrate 143, anoptical waveguide 144 having an incident taper region 144a which is arranged in an upper side of thesubstrate 143, a plurality ofgratings 145 periodically arranged at regular intervals Λ1 on theoptical waveguide 144, adielectric passivation film 146 for protecting and insulating theoptical waveguide 144 and thegratings 145 from the outside, afirst electrode 147 arranged just over theoptical waveguide 144 through thegratings 145 and thedielectric passivation film 146 for inducing electric field which penetrates through theoptical waveguide 144, and asecond electrode 148 arranged over thesubstrate 143 through thedielectric passivation film 146. - The
substrate 143 is formed by cutting out LiNbO3 crystal in a direction perpendicular to a Z-axis defined as [001]-direction in Miller indices. Therefore, the LiNbO3 substrate 143 (or +Z plate) has an upper surface defined as (001)-plane in Miller indices. - The
optical waveguide 144 is formed at a length of 10 mm by exchanging a part of Li+ ions of thesubstrate 143 for H+ ions. Therefore, an effective refractive index of theoptical waveguide 144 is slightly higher than that of thesubstrate 143 to confine large parts of coherent light in theoptical waveguide 144. Also, because the electro-optic effect on LiNbO3 is very large, the refractive index of theoptical waveguide 144 greatly changes by inducing electric field in theoptical waveguide 144. A thickness of theoptical waveguide 144 is set close to a cut-off thickness which is equivalent to a minimum thickness required to transmit coherent light through theoptical waveguide 144. Therefore, in cases where no electric field penetrates through theoptical waveguide 144, the coherent light can transmit through theoptical waveguide 144. In contrast, in cases where electric field penetrates through theoptical waveguide 144 to decrease the refractive index of theoptical waveguide 144, the coherent light cannot transmit through theoptical waveguide 144. That is, the coherent light is cut off in theoptical waveguide 144. - The
gratings 145 is made of Ta2O5, and the regular intervals Λ1 of thegratings 145 are 0.19 µm to satisfy the DBR condition Λ1=m*λc/(2N). Here the wavelength λc of the coherent light is 840 nm and the refractive index N of theoptical waveguide 144 is 2.2. Therefore, the grating number m becomes equal to 1, so that the coherent light transmits through theoptical waveguide 144 in a single mode. - The
dielectric passivation film 146 is made of SiO2, and thefilm 146 prevents thefirst electrode 147 made of metal from being directly in contact with theoptical waveguide 144. Therefore, the transmission loss of theoptical waveguide 144 for the coherent light is greatly decreased. - The
first electrode 147 has a width of 4 µm and a thickness of 200 nm, and a positive electric potential is applied to thefirst electrode 147 to decrease the refractive index of theoptical waveguide 144. Thesecond electrode 148 is grounded. Also, the distance between theelectrodes - The height of the
active layer 122a is the same as that of the incident taper region 144a, and thesemiconductor laser 122 is arranged closed to the incident taper region 144a. Therefore, coherent light radiated from theactive layer 122a of thesemiconductor laser 122 is coupled to the incident taper region 144a of theoptical waveguide 144 at a short time without transmitting though any lens. - In the above configuration, in cases where no electric potential is applied to the
first electrode 147, the coherent light coupled to an incident end facet 144b transmits through theoptical waveguide 144 in a single mode, and a part of the coherent light is reflected by thegratings 145 to be fed back to theactive layer 122a of thesemiconductor laser 122. Also, a remaining part of the coherent light is output from an output end facet 144c of theoptical waveguide 144. Therefore, the wavelength λc of the coherent light radiated from thesemiconductor laser 122 is fixed. - In contrast, in cases where a positive electric potential is applied to the
first electrode 147, electric field is induced in theoptical waveguide 144 to decrease the refractive index of theoptical waveguide 144. Therefore, the coherent light coupled to the incident taper region 144b is cut off and transmits to thesubstrate 134 because the coherent light is coupled to a first radiation mode. As a result, no coherent light is output from the output end facet 144c of theoptical waveguide 144. - For example, when the electric potential V1 applied to the
first electrode 147 is 10 V, the intensity of the electric field becomes 2 × 106 V/m so that the refractive index of theoptical waveguide 144 decreases by 10-4. Therefore, the coherent light is cut off. Also, when a pulsated electric potential having a peak voltage 10 V is repeatedly applied to thefirst electrode 147 at a cycle of 2 ns (a frequency of 500 MHz), the intensity of the coherent light output from theoptical waveguide 144 is modulated at a frequency of 500 MHz, and the wavelength λc of the coherent light is stably fixed to 840 nm. - Accordingly, the coherent light modulated and fixed at a prescribed wavelength can be reliably obtained.
- In this apparatus, the
substrate 134 is made of LiNbO3 because the electro-optic effect on LiNbO3 is very large. However, the material of thesubstrate 134 is not limited to LiNbO3. For example, a ferroelectric substance such as LiTaO3 can be applicable. - Also, the
gratings 145 made of Ta2O5 is formed by etching the Ta2O5 film 139 according to the photolithography process and the dry etching process. However, the material of thegratings 145 is not limited to Ta2O5. Also, the manufacturing method of thegratings 145 is not limited to the dry etching process. For example, thegratings 54 shown in Fig. 8A are applicable. - Fig. 42 is a constitutional view of an optical information processing apparatus described for reference.
- As shown in Fig. 42. an optical
information processing apparatus 151 comprises the laserbeam generating apparatus 133 of 6 mm square, acollimator lens 152 for collimating coherent light radiated from thedevice 133, abeam splitter 153 for splitting a beam of coherent light collimated by thelens 152 in two beams, anobjective lens 154 for converging the coherent light splitted by thelens 152 at anoptical disk 155 in which information is stored, a converginglens 156 for converging the coherent light which is reflected by theoptical disk 155 and is splitted by thebeam splitter 153, and aSi detector 157 for detecting the intensity of the coherent light converged by the converginglens 156. - The
objective lens 154 is made of SF8 (manufactured by HOYA glass LTD. in Japan) having a refractive index of 1.68, and a numerical aperture NA of thelens 154 is 0.6. - In the above configuration, coherent light P1 radiated from the
semiconductor laser 122 transmits through theoptical waveguide 136 at a transverse magnetic TMoo mode equivalent to a lowest-order mode. Thereafter, the coherent light P1 radiated from thedevice 133 is radiated to theoptical disk 155 to form a converging spot of 1.1 µm in diameter after the coherent light PI transmits through thecollimator lens 152, thebeam splitter 153, and theobjective lens 154. Thereafter, reflected coherent light is detected by thedetector 157 after the reflected coherent light transmits through theobjective lens 154, thebeam splitter 153, and the converginglens 156. - Because the wavelength of the coherent light is stably fixed in the
device 133, a beam of coherent light can be stably radiated to a desired pit of theoptical disk 155. Therefore, even though information is stored in theoptical disk 155 with high density, the information can be read with high accuracy. For example, a relative intensity of noise (RIN) to an information signal is -140 dB/Hz. - In this apparatus, the
objective lens 154 is made of SF8. However, the material of theobjective lens 154 is not limited to SF8. For example, even though SF6 having high refractive index and high dispersion coefficient is applied as the material of theobjective lens 154, the information can be still read with high accuracy because the wavelength of the coherent light is stably fixed in thedevice 133. - Also, the
apparatus 151 can be applied to write information in theoptical disk 155. - A third embodiment is described with reference to Figs. 43, 44.
- Fig. 43 is a cross-sectional view of a shorter wavelength laser beam generating apparatus according to a third embodiment of the present invention.
- As shown in Fig. 43, a shorter wavelength laser
beam generating apparatus 161 comprises the Si sub-mount 134 of 10 mm square, thesemiconductor laser 122, and awavelength changing device 162 mounted upside down on the sub-mount 134. Thewavelength changing device 162 comprises the LiTaO3 substrate 82, anoptical waveguide 163 having anincident taper region 164 which is arranged in an upper side of thesubstrate 82, a plurality ofgratings 138 periodically arranged at grating intervals Λ1 on theoptical waveguide 163, the inverted-polarization layers 84 periodically arranged at matching intervals Λ2 in the upper side of thesubstrate 82 to cross theoptical waveguide 163, and thepassivation film 140 for covering the gratings. The height of theactive layer 122a is the same as that of theincident taper region 164, and thesemiconductor laser 122 is arranged closed to theincident taper region 164. Therefore, coherent light radiated from theactive layer 122a of thesemiconductor laser 122 is coupled to theincident taper region 164 of theoptical waveguide 163 at a short time without transmitting though any lens. - The
optical waveguide 163 including theincident caper region 164 is manufactured in the same manner as theoptical waveguide 136. - Fig. 44 is a constitutional view of an optical information processing apparatus including the third embodiment of the present invention.
- As shown in Fig. 44, an optical
information processing apparatus 165 comprises the shorter wavelength laserbeam generating apparatus 161 of 10 mm square, thecollimator lens 152, thebeam splitter 153, theobjective lens 154, the converginglens 156, and theSi detector 157. - In the above configuration, a second harmonic wave P2 is radiated to a desired pit in the
optical disk 155 to form a converging spot of 0.6 µm in diameter. The diameter of 0.6 µm is smaller than a conventional diameter 0.78 µm obtained in a conventional apparatus. Therefore, information stored with higher density more than that in theapparatus 151 can be read or written. Also, a relative intensity of noise (RIN) to an information signal is -145 dB/Hz. Therefore, the information signal can be clearly obtained. - Fig. 45 is a cross-sectional view of a laser beam generating apparatus described for reference.
- As shown in Fig. 45, a laser
beam generating apparatus 171 comprises the Si sub-mount 134 of 6 mm square, asemiconductor laser 172 having anactive layer 172a for radiating coherent light having a wavelength of 1.552 µm, and a diffractingdevice 173 mounted upside down on the sub-mount 134. The diffractingdevice 173 comprises asubstrate 174 made of glass, theoptical waveguide 136, thegratings 138, and thepassivation film 140 for covering thegratings 138. The height of theactive layer 172a is the same as that of theincident taper region 137, and thesemiconductor laser 172 is arranged closed to theincident taper region 137. Therefore, coherent light radiated from theactive layer 172a of thesemiconductor laser 172 is coupled to theincident taper region 137 of theoptical waveguide 136 at a short time without transmitting though any lens. - In the above configuration, coherent light having a wavelength of 1.552 µm is stably obtained in a temperature range from 0 to 50 "C. Therefore, even though an ambient temperature fluctuates, the coherent light having the wavelength of 1.552 µm can be stably obtained.
- In the laser
beam generating apparatus optical waveguide semiconductor laser device - Also, the
substrates - Fig. 46 is a diagonal view of an integrated optical circuit described for reference.
- As shown in Fig. 46, an integrated
optical circuit 181 comprises thesubstrate 52, a three-dimensionaloptical waveguide 182 arranged in an upper side of thesubstrate 52 for confining coherent light transmitting from anincident end facet 182a to an output end facet 182b in longitudinal and lateral directions, asemiconductor laser 183 attached closely to theincident end facet 182a for radiating the coherent light. a plurality of Ta2O5 gratings 184 periodically arranged on the LiTaO3 substrate 52 at regular intervals Λ1 of 1.9 µm for reflecting the coherent light transmitting through theoptical waveguide 182, a slaboptical waveguide 185 arranged on thesubstrate 52 for transmitting the coherent light radiated from the output end facet 182b, agrating lens 186 arranged on the slaboptical waveguide 185 for collimating the coherent light radiated from the output end facet 182b, anoptical deflecting device 187 arranged on the slaboptical waveguide 185 for radiatingelastic waves 188 into the slaboptical waveguide 185 to deflect the coherent light collimated by the grating lens, and agrating coupler 189 arranged on the slaboptical waveguide 185 for converging the coherent light deflected by theoptical deflecting device 187 at theoptical disk 155. - The
optical waveguide 182 is formed by exchanging a part of Li+ ions of thesubstrate 52 for H+ ions, and theoptical waveguide 182 has a thickness of 1.9 µm and a length of 3 mm. Therefore, an effective refractive index of theoptical waveguide 182 is slightly higher than that of thesubstrate 52 to confine light in theoptical waveguide 182. - The
grating lens 186 is formed by a series of gratings arranged in a direction vertical to a propagation direction of the coherent light. Theoptical deflecting device 187 is formed by a pair of comb electrodes. One of the comb electrodes is connected to an electric source, and another comb electrode is grounded. Therefore, when an electric potential is applied to one comb electrode, elastic waves are periodically radiated to the slaboptical waveguide 185. Thegrating coupler 189 is formed by a plurality of arch-gratings concentrically arranged. - In the above configuration, coherent light radiated from the
semiconductor laser 183 is directly coupled to theoptical waveguide 182. Thereafter, a part of the coherent light is reflected by thegratings 184 and is fed back to thesemiconductor laser 183. Therefore, thesemiconductor laser 183 radiates the coherent light of which the wavelength λc(=2*N*Λ1/m, m=10) is fixed to a particular value determined by the regular intervals Λ1 of thegratings 184 and the effective refractive index N of theoptical waveguide 182. In contrast, remaining part of the coherent light is radiated from the output end facet 182b to the slaboptical waveguide 185. Thereafter, the coherent light is collimated by thegrating lens 186 and is deflected by the elastic waves radiated from theoptical deflecting device 187. Thereafter, the coherent light is converged at theoptical disk 155 by thegrating coupler 189. - Accordingly, the coherent light of which the wavelength is fixed can be converged at a point.
- Also, even though the
grating lens 186 and thegrating coupler 189 are made of Ta2O5 which has a large wavelength dispersion coefficient, the coherent light can be focused at a focal point because the wavelength of the coherent light is reliably fixed. - Also, because the three-dimensional
optical waveguide 182 is arranged, the coherent light reflected by thegratings 184 can be smoothly fed back to thesemiconductor laser 183. - Next, a manufacturing method of the integrated
optical circuit 181 is described. - The LiTaO3 substrate 52 is immersed in a pyrophosphoric acid (H4P2O7) solution to form the
optical waveguide 182 and the slaboptical waveguide 185 according to a proton-exchange process. Thereafter. Ta2O5 is deposited on the entire surface of theoptical waveguide 182, the slaboptical waveguide 185, and thesubstrate 52 to form a Ta2O5 film. Thereafter, the Ta2O5 film is patterned according to an electron beam lithography and a dry etching. Therefore, thegratings 184, thegrating lens 186, and thegrating coupler 189 are simultaneously formed. Thereafter, metal material is deposited on the slaboptical waveguide 185, and the metal material is patterned to formoptical deflecting device 187. Thereafter, thesemiconductor laser 183 is attached to thesubstrate 52. - Accordingly, because an integrated circuit consisting of the
gratings 182, thegrating lens 186, theoptical deflecting device 187, and thegrating coupler 189 are compactly arranged on the slaboptical waveguide 185 and thesubstrate 52, the integratedoptical circuit 181 can be manufactured in a small size. - Next, optical characteristics of the integrated
optical circuit 181 is described. - The reflection efficiency of the
gratings 184 is only 10 %. Though the reflection efficiency is not high, thevalue 10 % is enough to stably fix the wavelength of the coherent light radiated from thesemiconductor laser 183 because thesemiconductor laser 183 is arranged closed to theoptical waveguide 182. - Fig. 47 graphically shows relation between a driving current supplied to the
semiconductor laser 183 and the wavelength λc of the coherent light radiated from thesemiconductor laser 183. - As shown in Fig. 47, the wavelength λc of the coherent light conventionally varies by 5 nm when the driving current changes by 50 mA. However, no variation of the wavelength λc of the coherent light is observed in the
circuit 181 according to the present invention. - Accordingly, because the wavelength λc of the coherent light is stably fixed, the coherent light obtained in the
circuit 181 can be useful. - A fourth embodiment is described with reference to Fig. 48.
- Fig. 48 is a diagonal view of an integrated optical circuit according to a fourth embodiment of the present invention.
- As shown in Fig. 48, an integrated
optical circuit 191 comprises the LiNbO3 substrate 143. a first three-dimensionaloptical waveguide 192 arranged in an upper side of thesubstrate 143 for confining coherent light transmitting from anincident end facet 192a to anoutput end facet 192b in longitudinal and lateral directions, the Ta2O5 gratings 145 arranged at grating intervals Λ1 in the neighborhood of theincident end facet 192a, asemiconductor laser 193 for radiating 840 nm wavelength fundamental waves P1, a converginglens 194 for converging the fundamental waves P1 at theincident end facet 192a of the firstoptical waveguide 192, afirst electrode 195 arranged on the firstoptical waveguide 192 which is positioned in the neighborhood of theoutput end facet 192b, asecond electrode 196 arranged on thesubstrate 143, a second three-dimensionaloptical waveguide 197 arranged in parallel closely to the firstoptical waveguide 192 for transmitting the fundamental waves P1 transferred from the firstoptical waveguide 192, and the inverted-polarization layers 84 arranged at matching intervals Λ2 to cross the secondoptical waveguide 197. - A region in which the first
optical waveguide 192 covered by thefirst electrode 195 and the secondoptical waveguide 197 are parallel closely to each other is called alight modulating region 198, and another region in which the secondoptical waveguide 197 and the inverted-polarization layers 84 cross each other is called awavelength changing region 199. - An allowed wavelength width Δλ for the fundamental waves P1 is 0.3 nm to change the fundamental waves P1 to second harmonic waves P2 in the
wavelength changing region 199. - The regular intervals Λ1 of the
gratings 145 are set to 0.19 µm to satisfy the DBR condition Λ1=m*λc/(2N). Here the wavelength λf of the fundamental waves P1 is 840 nm and the refractive index N of theoptical waveguide 192 is 2.2. Therefore, the grating number m becomes equal to 1, so that the fundamental waves transmits through theoptical waveguides - The
optical waveguide 192 is formed by exchanging a part of Li+ ions of thesubstrate 143 for H+ ions. Therefore, an effective refractive index of theoptical waveguide 192 is slightly higher than that of thesubstrate 143 to confine light in theoptical waveguide 192. Also, because the electro-optic effect on LiNbO3 is very large, the refractive index of theoptical waveguide 192 greatly changes by inducing electric field in theoptical waveguide 192. - The
first electrode 195 has a width of 4 µm and a thickness of 200 nm, and a positive electric potential is applied to thefirst electrode 195 to decrease the refractive index of the firstoptical waveguide 192 in thelight modulating region 198. Thesecond electrode 196 is grounded. Also, the distance between theelectrodes - In the above configuration, fundamental waves P1 radiated from the
semiconductor laser 193 transmit through the firstoptical waveguide 192, and a part of the fundamental waves P1 are reflected by thegratings 145 and are fed back to thesemiconductor laser 193. Therefore, the wavelength λf of the fundamental waves P1 radiated from thesemiconductor laser 193 is fixed to 840 nm, and the fluctuation of the wavelength λf ranges within the allowed wavelength width Δλ=0.3 nm. - Thereafter, in cases where no electric potential is applied to the
first electrode 195, a remaining part of the fundamental waves P1 are transferred to the secondoptical waveguide 197 in thelight modulating region 198 because bothoptical waveguides wavelength changing region 199. Therefore, the second harmonic waves P2 are output. - In contrast, in cases where a positive electric potential is applied to the
first electrode 195, the refractive index of the firstoptical waveguide 192 in thelight modulating region 198 is decreased. Therefore, the remaining part of the fundamental waves P1 transmit to thesubstrate 143 because the fundamental waves P1 are coupled to a radiation mode. As a result, no harmonic wave P2 is output. - For example, when the electric potential V1 applied to the
first electrode 195 is 10 V, the intensity of the electric field becomes 2 × 106 V/m so that the refractive index of the firstoptical waveguide 192 decreases by 10-4. Therefore, the fundamental waves P1 are not transferred to the secondoptical waveguide 197. Also, when a pulsated electric potential having a peak voltage 10 V is repeatedly applied to thefirst electrode 192 at a cycle of 2 ns (a frequency of 500 MHz), the intensity of the second harmonic waves P2 output from the secondoptical waveguide 197 is modulated at a frequency of 500 MHz, and the wavelength λh of the second harmonic waves P2 is stably fixed to 420 nm. - Accordingly, the second harmonic waves P2 modulated can be reliably obtained.
- Also, even though an ambient temperature or a driving current applied to the
semiconductor laser 193 fluctuates, the wavelength of the second harmonic waves P2 can be stably maintained. - Also, because a light reflecting region consisting of the
gratings 145, thelight modulating region 198, and thewavelength changing region 197 are compactly arranged on thesubstrate 143, the integratedoptical circuit 191 can be efficiently manufactured in a small size. - In the ninth embodiment, the
substrate 143 is made of LiNbO3 because the electro-optic effect on LiNbO3 is very large. However, material of thesubstrate 143 is not limited to LiNbO3. For example, a ferroelectric substance such as LiTaO3 can be applicable. - Also, the
gratings 145 made of Ta2O5 is formed by etching a Ta2O5 film according to a photolithography process and a dry etching process. However, the material of thegratings 145 is not limited to Ta2O5. Also, the manufacturing method of thegratings 145 is not limited to the dry etching process. For example, thegratings 54 shown in Fig. 8A is applicable. - The
substrates - Having illustrated and described the principles of our invention in a preferred embodiment thereof. It should be readily apparent to those skilled in the art that the invention can be modified in arrangement and detail without departing from such principles. We claim all modifications coming within the scope of the accompanying claims.
Claims (28)
- A diffracting device, comprising:a substrate (82, 143) made of a non-linear optical crystal, the substrate being polarized in a first polarization direction;an optical waveguide (72, 83, 92, 197) arranged in the substrate for transmitting coherent light in a propagation direction perpendicular to the first polarization direction; anda plurality of inverted polarization layers (84, 93, 98) polarized in a second polarization direction opposite to the first polarization direction of the substrate and periodically arranged in the substrate at regular intervals in the propagation direction to reflect a part of the coherent light in a diffraction grating composed of the optical waveguide and the inverted polarization layers periodically crossing the optical waveguide; characterised byan electrode (110) arranged on the optical waveguide, in which the inverted polarization layers periodically cross, for inducing an electric field which penetrates through the diffraction grating to change a first refractive index of the inverted polarization layers and to change a second refractive index of the optical waveguide, changes of the first refractive index with the electric field being opposite to those of the second refractive index with the electric field to increase or decrease a difference between the first refractive index and the second refractive index.
- A diffracting device according to claim 1 in which the regular interval A of the inverted polarization layers satisfies an equation Λ = m*λ/(2N), where m = 1 or 2, the symbol λ is a wavelength of the coherent light and the symbol N is an effective refractive index of the optical waveguide.
- A diffracting device according to claim 1 or 2 in which a depth Da of the inverted polarization layer in the first polarization direction and a depth Dw of the optical waveguide in the first polarization direction satisfy a relation Da < Dw.
- A waveguide changing device including a diffracting device according to claim 1, 2, or 3, in which a part of fundamental waves of the coherent light is changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers, and the waveguide changing device further comprising:
a plurality of second inverted polarization layers (109) polarized in the second polarization direction and periodically arranged in the substrate at grating intervals in the propagation direction to periodically cross the optical waveguide, the inverted polarization layers arranged under the electrode (110) being replaced with the second inverted polarization layers (109) to reflect another part of the fundamental waves composed of the optical waveguide and the second inverted polarization layers in the periodic structure. - A wavelength changing device according to claim 4, further comprising an electric source for periodically supplying an electric potential to the electrode to modulate the second harmonic waves output from the optical waveguide.
- A wavelength changing device according to claim 4 or 5 in which the grating interval Λ1 of the second inverted polarization layers satisfies a distributed Bragg condition Λ1 = m*λf/(2N), where m is a natural number and where the symbol λf is a wavelength of the fundamental waves and the symbol N is an effective refractive index of the optical waveguide, and the regular interval Λ2 of the inverted polarization layers satisfies a quasi-phase matching condition Λ2 = λf/{2*(N2ω-N ω)} where the symbol N2ω is a refractive index of the alternate rows for the second harmonic waves and the symbol Nω is a refractive index of the alternate rows for the fundamental waves.
- A wavelength changing device according to claim 4 or 5, in which a ratio of a width of each second inverted polarization layer in the propagation direction of the coherent light to the grating interval Λ1 of the second inverted polarization layers is in a first range of from 0.05 to 0.24 or in a second range of from 0.76 to 0.95 on condition that Λ1 = m*λf/(2N), m =2 where the symbol λf is a wavelength of the fundamental waves and the symbol N is an effective refractive index of the optical waveguide.
- A wavelength changing device according to claim 4, 5, 6 or 7 in which a width Wa of each second inverted polarization layer in the propagation direction and the grating interval Λ of each second inverted polarization layers satisfy a relation Wa ≠ Λ - Wa.
- A wavelength changing device according to any one of claims 4 to 8 in which a depth Da of the second inverted polarization layer in the first polarization direction and a depth Dw of the optical waveguide in the first polarization direction satisfy a relation Da < Dw.
- A wavelength changing device including a diffracting device according to claim 1, 2, or 3, further comprising:a plurality of resist elements (54) having a first refractive index N1 and periodically arranged on an incident side of the optical waveguide at grating intervals in the propagation direction of the coherent light, the resist elements being made of a soft material which has high workability; anda reflecting element (55) having a second refractive index N2 higher than the first refractive index N1 of the resist elements and arranged between the resist elements for reflecting a part of fundamental waves of the coherent light distributed in the reflecting element, a refractive change being made by a periodic structure consisting of the resist elements and the reflecting element, and the remaining part of the fundamental waves being changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers periodically crossing the optical waveguide.
- A wavelength changing device according to claim 10 in which the inverted polarization layers are locally arranged on an output side of the optical waveguide.
- A waveguide changing device according to claim 10 or 11 in which a ratio of a width of each resist element in the propagation direction of the coherent light to the grating interval Λ1 of the resist elements is in a first range from 0.05 to 0.24 or in a second range from 0.76 to 0.95 on condition that Λ1 = m*λf/(2N), m = 2 where the symbol λf is a wavelength of the fundamental waves and the symbol N is an effective refractive index of the optical waveguide.
- A laser beam generating apparatus including a diffracting device according to claim 1, 2 or 3, further comprising:
a semiconductor laser (88) for radiating a beam of coherent light consisting of fundamental waves to an incident end of the optical waveguide to reflect a part of the coherent light by the diffraction grating toward the semiconductor laser and fix the wavelength of the coherent light radiated from the semiconductor laser, the coherent light radiated to the optical waveguide being output from an output end of the optical waveguide. - A laser beam generating apparatus according to claim 13 in which the regular interval Λ of the inverted polarization layers satisfies an equation Λ = m*λ/ (2N), m = 1 or 2 where the symbol λ is a wavelength of the coherent light and the symbol N is an effective refractive index of the optical waveguide.
- A laser beam generating apparatus according to claim 13 or 14 in which a width Wa of each inverted polarization layer in the propagation direction and the regular interval A of each inverted polarization layers satisfy a relation Wa ≠ Λ - Wa.
- A laser beam generating apparatus according to claim 13, 14 or 15 in which a depth Da of the inverted polarization layer in the first polarization direction and a depth Dw of the optical waveguide in the first polarization direction satisfy a relation Da < Dw.
- A laser beam generating apparatus including a wavelength changing device according to claim 4, and the laser beam generating apparatus further comprising:a semiconductor laser (88) for radiating a beam of coherent light consisting of the fundamental waves to an incident end of the optical waveguide;wherein said another part of the fundamental waves being reflected towards the semiconductor laser to fix the wavelength of the coherent light radiated from the semiconductor laser.
- A laser beam generating apparatus including a diffracting device according to claim 1, 2 or 3 in which a part of fundamental waves of the coherent light is changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers, and the laser beam generating apparatus further comprising:a semiconductor laser (88) for radiating a beam of coherent light consisting of the fundamental waves to an incident end of the optical waveguide;a dielectric film arranged on the optical waveguide for confining the second harmonic waves produced in the alternate rows to prevent the second harmonic waves spread outside the optical waveguide; anda plurality of grating elements (103) periodically arranged on the dielectric film at grating intervals in the propagation direction of the coherent light for reflecting the fundamental waves spreading outside the dielectric film toward the semiconductor laser to fix the wavelength of the coherent light radiated from the semiconductor laser.
- A laser beam generating apparatus according to claim 18 in which the product of the thickness T µm of the dielectric film and the effective index n is in the range of from 0.06 to 0.15.
- A laser beam generating apparatus according to claim 18 or 19 in which the dielectric film is made of a material selected from the group consisting of SiO2, Ta2O5, Ti2O5, SiN and LiNbO3.
- A laser beam generating apparatus according to claim 18, 19 or 20 in which the grating interval Λ1 of the grating elements satisfies a distributed Bragg condition Λ1 = m*λf/(2N) where m is a natural member and where the symbol λf is a wavelength of the fundamental waves and the symbol N is an effective refractive index of the optical waveguide, and the regular interval Λ2 of the inverted polarization layers satisfies a quasi-phase matching condition Λ2 = λf/(2*(N2ω-Nω)) where the symbol N2ω is a refractive index of the alternate rows for the second harmonic waves and the symbol Nω is a refractive index of the alternate rows for the fundamental waves.
- A laser beam generating apparatus according to claim 18, 19, 20 or 21 in which a ratio of a width of each grating element in the propagation direction of the fundamental waves to the grating interval Λ1 of the grating elements is in a first range from 0.05 to 0.24 or in a second range from 0.76 to 0.95 on condition that an equation Λ1 = m*λf// (2N), m = 2 where the symbol λf is a wavelength of the fundamental waves and the symbol N is an effective refractive index of the optical waveguide.
- A laser beam generating apparatus including a diffracting device according to claim 1, 2 or 3 and further comprising:a semiconductor laser (88) for radiating a beam of coherent light consisting of fundamental waves to an incident end of the optical waveguide; anda plurality of grating elements (103) periodically arranged on an incident side portion of the optical waveguide at grating intervals in the propagation direction of the coherent light for reflecting a part of the fundamental waves of the coherent light toward the semiconductor laser to fix the wavelength of the fundamental waves radiated from the semiconductor laser, the remaining part of the fundamental waves being changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers periodically crossing the optical waveguide.
- An integrated optical circuit including a diffracting device according to claim 1, 2 or 3 and further comprising:a semiconductor laser (193) for radiating a beam of coherent light consisting of fundamental waves to an incident end of the optical waveguide;a second optical waveguide (192) arranged in the substrate in parallel to the optical waveguide for transmitting the fundamental waves radiated from the semiconductor laser to the optical waveguide electro-magnetically coupled to the second optical waveguide; anda second electrode (195) arranged on the second optical waveguide for inducing electric field penetrating through the second optical waveguide to reduce a refractive index of the second optical waveguide, a part of the fundamental waves of the coherent light being changed to second harmonic waves in alternate rows of the optical waveguide and the inverted polarization layers in cases where any electric field is not induced in the second optical waveguide.
- An integrated optical circuit according to claim 24, in which the optical waveguide and the second optical waveguide are respectively a three-dimensional optical waveguide.
- A device, apparatus or circuit according to any one of claims 1 to 25, in which the substrate is made of LiTa(1-x)NbxO3 where 0 ≤ x ≤ 1.
- A device, apparatus or circuit according to any one of claims 1 to 26, in which the optical waveguide has a composition determined by exchanging a part of Li+ ions included in the substrate for H+ ions.
- A device, apparatus or circuit according to any one of claims 1 to 27, in which the optical waveguide has a composition determined by exchanging a part of Li+ ions included in the substrate for H+ ions.
Applications Claiming Priority (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18913892 | 1992-07-16 | ||
JP189138/92 | 1992-07-16 | ||
JP18913892A JPH0637398A (en) | 1992-07-16 | 1992-07-16 | Laser light source and optical information processor |
JP20481592 | 1992-07-31 | ||
JP204821/92 | 1992-07-31 | ||
JP4204815A JPH0651359A (en) | 1992-07-31 | 1992-07-31 | Wavelength conversion element, short wavelength laser device and wavelength variable laser device |
JP4204821A JPH0653482A (en) | 1992-07-31 | 1992-07-31 | Optical integrated circuit and optical pickup |
JP20482192 | 1992-07-31 | ||
JP204815/92 | 1992-07-31 | ||
JP8595093 | 1993-04-13 | ||
JP85950/93 | 1993-04-13 | ||
JP8595093 | 1993-04-13 | ||
EP93305618A EP0579511B1 (en) | 1992-07-16 | 1993-07-16 | Diffracting optical apparatus |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93305618.6 Division | 1993-07-16 | ||
EP93305618A Division EP0579511B1 (en) | 1992-07-16 | 1993-07-16 | Diffracting optical apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0753767A2 EP0753767A2 (en) | 1997-01-15 |
EP0753767A3 EP0753767A3 (en) | 1997-01-29 |
EP0753767B1 true EP0753767B1 (en) | 2001-01-31 |
Family
ID=27467187
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93305618A Expired - Lifetime EP0579511B1 (en) | 1992-07-16 | 1993-07-16 | Diffracting optical apparatus |
EP96113155A Expired - Lifetime EP0753768B1 (en) | 1992-07-16 | 1993-07-16 | Wavelength changing device and laser beam generating apparatus |
EP96113153A Expired - Lifetime EP0753767B1 (en) | 1992-07-16 | 1993-07-16 | Diffracting optical apparatus |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93305618A Expired - Lifetime EP0579511B1 (en) | 1992-07-16 | 1993-07-16 | Diffracting optical apparatus |
EP96113155A Expired - Lifetime EP0753768B1 (en) | 1992-07-16 | 1993-07-16 | Wavelength changing device and laser beam generating apparatus |
Country Status (3)
Country | Link |
---|---|
US (1) | US5619369A (en) |
EP (3) | EP0579511B1 (en) |
DE (3) | DE69325210T2 (en) |
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1993
- 1993-07-15 US US08/091,955 patent/US5619369A/en not_active Expired - Lifetime
- 1993-07-16 EP EP93305618A patent/EP0579511B1/en not_active Expired - Lifetime
- 1993-07-16 EP EP96113155A patent/EP0753768B1/en not_active Expired - Lifetime
- 1993-07-16 DE DE69325210T patent/DE69325210T2/en not_active Expired - Fee Related
- 1993-07-16 EP EP96113153A patent/EP0753767B1/en not_active Expired - Lifetime
- 1993-07-16 DE DE69327738T patent/DE69327738T2/en not_active Expired - Fee Related
- 1993-07-16 DE DE69329912T patent/DE69329912T2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0579511A3 (en) | 1994-06-15 |
EP0753767A2 (en) | 1997-01-15 |
DE69329912T2 (en) | 2001-07-19 |
DE69325210D1 (en) | 1999-07-15 |
EP0753768B1 (en) | 2000-01-26 |
EP0753768A2 (en) | 1997-01-15 |
US5619369A (en) | 1997-04-08 |
DE69329912D1 (en) | 2001-03-08 |
DE69327738T2 (en) | 2000-06-15 |
EP0579511A2 (en) | 1994-01-19 |
EP0579511B1 (en) | 1999-06-09 |
EP0753768A3 (en) | 1997-01-22 |
EP0753767A3 (en) | 1997-01-29 |
DE69325210T2 (en) | 1999-11-11 |
DE69327738D1 (en) | 2000-03-02 |
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