EP0742453A1 - Wideband high reflectivity mirror and its manufacturing process - Google Patents

Wideband high reflectivity mirror and its manufacturing process Download PDF

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Publication number
EP0742453A1
EP0742453A1 EP95401108A EP95401108A EP0742453A1 EP 0742453 A1 EP0742453 A1 EP 0742453A1 EP 95401108 A EP95401108 A EP 95401108A EP 95401108 A EP95401108 A EP 95401108A EP 0742453 A1 EP0742453 A1 EP 0742453A1
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Prior art keywords
mirror
layer
refractive index
stack
substrate
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EP95401108A
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German (de)
French (fr)
Inventor
Michel Ida
Patrick Chaton
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Direction General pour lArmement DGA
Etat Francais
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Direction General pour lArmement DGA
Commissariat a lEnergie Atomique CEA
Etat Francais
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Priority to FR9313932A priority Critical patent/FR2712990B1/en
Priority to US08/433,963 priority patent/US5835273A/en
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Priority to EP95401108A priority patent/EP0742453A1/en
Publication of EP0742453A1 publication Critical patent/EP0742453A1/en
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • G02B5/0816Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/0825Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
    • G02B5/0833Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising inorganic materials only
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • G02B5/0883Mirrors with a refractive index gradient
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00Optical: systems and elements
    • Y10S359/90Methods

Definitions

  • the present invention relates to a broadband mirror with high reflectivity.
  • these mirrors are used, for example, as broadband mirrors for a tunable laser. They can also be used in high flux lasers or in devices with several wavelengths.
  • the problem which the invention proposes to solve is that of obtaining a mirror which has both an extended reflection band, good reflectivity, and good resistance to light flux.
  • reflection band of a mirror is understood to mean the width of the wavelength (or frequency) spectrum for which the reflectivity, that is to say the ratio between the intensity of the reflected flux and the intensity of the incident flux is greater than a determined value.
  • Good reflectivity is obtained in known manner by stacking an alternation of layers of dielectric materials of high and low refractive indices n 1 and n 2 with n 2 > n 1 and having an optical thickness equal to a quarter of the central wavelength of the mirror strip.
  • Such a stack is commonly referred to as a Bragg mirror. It is preferably carried out on a transparent substrate.
  • Document (1) relates to different types of mirrors and in particular to mirrors formed by a alternating stacking of layers. Like all the documents cited below, it is mentioned at the end of the description.
  • the width of the strip is essentially linked to the difference between the high index and the low index.
  • SiO 2 silicon oxide
  • TiO 2 titanium oxide
  • HfO 2 hafnium oxide
  • ZrO 2 zirconium oxide
  • the mirrors produced with the pair of TiO 2 -SiO 2 materials do not have very good resistance to laser flux, compared to the mirrors produced with the HFO 2 -SiO 2 couples or ZrO 2 -SiO 2 . TiO 2 is therefore ruled out.
  • Such a mirror is not entirely satisfactory.
  • such a structure suffers from the technological difficulty of its production. Indeed, the stacking of two mirrors results in a substantial increase in the thickness of the structure. The stack which can reach more than 5 ⁇ m for a reflectivity mirror greater than 99.5% is very fragile.
  • internal mechanical stresses further increase the risk of destruction of the structure. Given the limited choice of materials to make the stacks, it is difficult to also meet the mechanical strength requirements. The production yield is reduced and the cost of the double mirrors becomes too high.
  • the stacking of the two Bragg mirrors forms a sort of Perot-Fabry type cavity which generates a significant transmission peak in the spectral band, in particular for wavelengths located at 1 intersection of the reflection bands of the individual mirrors.
  • a double mirror structure is not a satisfactory solution.
  • Such a mirror is difficult and expensive to produce, in particular because of the need to determine ⁇ for each layer, the need for very precise control of the thickness of the layers, and because of the large number of layers which is essential to obtain a suitable reflectivity over the entire spectral band of the mirror.
  • An object of the present invention is to provide a mirror with high reflectivity, wide bandwidth and good resistance to laser light flux which does not have the drawbacks of the mirrors of the prior art mentioned in the foregoing.
  • Another object is to propose a method for producing such a mirror.
  • the mirror of the invention combines a mirror composed of alternating discrete layers of index n 1 and n 2 and a layer of continuously variable index.
  • the mirror of the invention comprises a substrate, a stack placed on the substrate and formed by alternating layers of a first material having a first refractive index and layers of a second material having a second refractive index greater than the first refractive index, and a layer of a third material disposed on the stack, said layer having a refractive index which varies according to a continuous profile.
  • the layer of the third material therefore does not have "index hops" from one value to another, such as stacking.
  • the profile of the index is chosen to be periodic, for example sinusoidal.
  • the calculation of the refractive index profile is obtained for example with a so-called annealing and entropy minimization algorithm, detailed in the document (4).
  • the function Ci represents the difference between the calculated optical properties and the optical properties sought for a given configuration i of parameters.
  • ⁇ Ci being a variation of this function after an elementary disturbance.
  • optical properties can be calculated by a matrix model for homogeneous isotropic layers with a parallel plane face.
  • the principle of this calculation is given in detail for example in document (1).
  • the continuously variable index layer is broken down into discrete layers. For example, a sinusoid period can be broken down into 30 elementary layers with which characteristic matrices are associated.
  • the product of these matrices and matrices associated with the Bragg mirror formed by the stack gives the optical properties of the entire structure.
  • variable index layer not only makes it possible to widen the spectral band of the mirror and to increase its reflectivity, but also to protect the stack from excessively high electric fields.
  • the stacking is preferably carried out with the pair of materials SiO 2 -TiO 2 chosen because it makes it possible to produce mirrors which have spectral bandwidths greater than those of the mirrors produced with other pairs of materials.
  • the stack can constitute a Bragg mirror.
  • the thickness of each of the layers of the stack is equal to ⁇ o / 4 where ⁇ o is the centering wavelength of the mirror. Thanks to the variable index layer, this stack is subjected to a more moderate flux than the incident flux.
  • the mirror also comprises a metal layer disposed between the substrate and the stack.
  • This metallic layer makes it possible to increase the reflectivity of the mirror and consequently to reduce the number of layers of the stack.
  • Aluminum is an example of a metal suitable because of its high reflectivity and the wide spectral reflection band.
  • the substrate can be made of silica, quartz, glass or ceramic.
  • the choice of substrate can influence the desired spectral response.
  • the substrate will be chosen according to other properties, such as its thermal conduction.
  • Alternating stacking is carried out, for example, using an ion beam sputtering technique called IBS (Ion Beam Sputtering).
  • IBS ion Beam Sputtering
  • This deposition technique is very advantageous for the deposition of dielectrics because of its energy character. It makes it possible to obtain dense materials, and of high optical index, which are very advantageous in the context of the present application. An illustration is given in particular in document (6).
  • variable index layer for which a very precise deposit control is required, a beam spraying technique is preferably used.
  • DIBS Dual Ion Beam Sputtering
  • DIBS DIBS
  • This technique using a silicon target in a reactive oxygen and nitrogen atmosphere, allows fine control of the production of a silicon oxynitride deposit, the index profile of which can be continuously adjusted by modulating the pressure. partial oxygen with respect to partial nitrogen pressure.
  • the structure of the mirror 1 represented in FIG. 1 comprises a metal layer 2, an alternating stack 4, for example a Bragg mirror, and a variable index layer 6, stacked in this order on a substrate 8.
  • the substrate plays no optical role in this embodiment, insofar as it is covered by the metal layer 2.
  • the substrate is made for example of silicon.
  • metals such as aluminum or silver can be chosen which have the advantage of good reflectivity in the visible and infrared spectrum and an extended spectral band.
  • aluminum is preferred to silver since its degradation in contact with air is less rapid.
  • This layer takes place for example by a traditional deposition technique by vacuum evaporation.
  • the stack 4 is preferably produced by an ion beam spraying technique.
  • the stack 4 is a Bragg mirror which comprises seven pairs of alternating layers.
  • Layer 6 with variable index is produced according to the DIBS technique.
  • the index profile, chosen sinusoidal, is optimized for the particularly difficult condition of a P polarization at 45 ° ( ⁇ / 4 radians) of incidence.
  • the index n varies in a direction perpendicular to the layer 6 and as a function of a thickness z measured from the surface 20 of the mirror.
  • n (z) ⁇ n ⁇ + ⁇ n.sin 2 ⁇ p z + ⁇
  • Figure 2 illustrates the index profile of the mirror.
  • the index plotted on the ordinate, is expressed as a function of the thickness z measured from the surface 20, plotted on the abscissa and expressed in nanometers.
  • the refractive index of layer 6 varies sinusoidally between 1.5 and 2.1 with a period of 205 nm.
  • FIG. 3 shows the increase in reflectivity and the widening of the spectral band of the mirror according to the invention.
  • curve 21 gives the reflectivity as a function of the wavelength of a traditional mirror formed of a metallic layer and of a Bragg mirror centered on 652 nm.
  • Curves 22 and 24 correspond to a mirror according to the invention where the variable index layer of silicon oxynitride (SiON) has been optimized respectively to widen the spectral band towards short and long wavelengths. It can be seen that the width of the strip of the mirrors according to the invention, respectively 150 nm and 160 nm is much greater than the spectral width of the strip of the conventional mirror corresponding to curve 21, which is 105 nm.
  • SiON silicon oxynitride
  • the layer of silicon oxynitride of the mirror according to the invention makes it possible to reduce in significant proportions the electric field of the incident flux which enters the Bragg mirror.
  • Figures 4 to 7 give the perpendicular S and parallel P components of the electric field as a function of the thickness z of the mirror described in the above and for different wavelengths chosen in the spectral band of the mirror where the reflectivity is greater than 99.7% (680, 625, 600 and 550 nm).
  • the components S and P of the field are respectively represented by reference curves 426 and 428. They correspond to an incident flux at 45 ° having a wavelength on the order of 680 nm.
  • a first region 430 corresponding to the variable index layer 6 is distinguished in FIG. 4, a second region 432 corresponding to the Bragg mirror 4 where dotted lines 433 recall the layers 12, 14, and a third region 434 corresponding to the layer d 'aluminum.
  • region 432 we can note discontinuities 436 corresponding to the interfaces between layers of high and low refractive index.
  • FIGS. 5, 6 and 7 which always correspond to an incident flux at 45 °, but for wavelengths respectively of the order of 625, 600 and 550 nm, the elements corresponding to those of FIG. 4 carry corresponding references but whose hundreds figure indicates the figure number.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

he mirror, having a wide band and high level of reflectivity, consists of a substrate covered with alternating layers of materials with two different refractive indices, one of which is higher than the other. The alternating layers are covered by a surface layer of a 3rd material which has a refractive index carrying with a continuous profile, either periodic or sinusoidal. The substrate is made from silica, quartz or glass and a layer of metal, esp. AL, is incorporated between the substrate and alternating layers to increase the mirror's reflectivity. The alternating layers are of SiO2 and TiO2, and the surface layer is of silicon oxynitride. The layering is carried out by ion beam pulverisation.

Description

DOMAINE TECHNIQUETECHNICAL AREA

La présente invention concerne un miroir à large bande et à haute réflectivité.The present invention relates to a broadband mirror with high reflectivity.

Elle concerne plus précisément des miroirs utilisables à la fois en incidence normale et en incidence oblique avec des angles supérieurs à 45°.It relates more precisely to mirrors which can be used both in normal incidence and in oblique incidence with angles greater than 45 °.

Selon leur domaine spectral, ces miroirs sont utilisés, par exemple, comme miroirs à large bande pour laser accordable. Ils peuvent également être utilisés dans des lasers à fort flux ou dans des dispositifs à plusieurs longueurs d'onde.Depending on their spectral range, these mirrors are used, for example, as broadband mirrors for a tunable laser. They can also be used in high flux lasers or in devices with several wavelengths.

ETAT DE LA TECHNIQUE ANTERIEURESTATE OF THE PRIOR ART

Le problème que se propose de résoudre l'invention est celui d'obtenir un miroir qui ait à la fois une bande de réflexion étendue, une bonne réflectivité, et une bonne tenue au flux lumineux.The problem which the invention proposes to solve is that of obtaining a mirror which has both an extended reflection band, good reflectivity, and good resistance to light flux.

On entend par "bande de réflexion" d'un miroir la largeur du spectre de longueur d'onde (ou de fréquence) pour lequel la réflectivité, c'est-à-dire le rapport entre l'intensité du flux réfléchi et l'intensité du flux incident est supérieure à une valeur déterminée.The expression “reflection band” of a mirror is understood to mean the width of the wavelength (or frequency) spectrum for which the reflectivity, that is to say the ratio between the intensity of the reflected flux and the intensity of the incident flux is greater than a determined value.

Une bonne réflectivité est obtenue de manière connue en empilant une alternance de couches de matériaux diélectriques de haut et bas indices de réfraction n1 et n2 avec n2>n1 et ayant une épaisseur optique égale au quart de la longueur d'onde centrale de la bande du miroir. Un tel empilement est communément désigné par miroir de Bragg. Il est de préférence réalisé sur un substrat transparent.Good reflectivity is obtained in known manner by stacking an alternation of layers of dielectric materials of high and low refractive indices n 1 and n 2 with n 2 > n 1 and having an optical thickness equal to a quarter of the central wavelength of the mirror strip. Such a stack is commonly referred to as a Bragg mirror. It is preferably carried out on a transparent substrate.

Le document (1) se rapporte à différents types de miroirs et notamment à des miroirs formés par un empilement alterné de couches. Comme tous les documents cités dans la suite du texte, il est mentionné à la fin de la description.Document (1) relates to different types of mirrors and in particular to mirrors formed by a alternating stacking of layers. Like all the documents cited below, it is mentioned at the end of the description.

Selon ce document, la réflectivité R pour un miroir de Bragg s'exprime comme suit : R = 1- n s n a n 2 n 1 2N 1+ n s n a n 2 n 1 2N 2

Figure imgb0001
où na est l'indice de réfraction de l'air et N le nombre de paires de couches de haut et bas indice (n1, n2).According to this document, the reflectivity R for a Bragg mirror is expressed as follows: R = 1- not s not at not 2 not 1 2N 1+ not s not at not 2 not 1 2N 2
Figure imgb0001
where n a is the refractive index of air and N the number of pairs of layers of high and low index (n 1 , n 2 ).

La largeur de la bande Δλ d'un tel miroir s'exprime comme suit : Δλ = λ c · 2 π · Δ n 〈n〉 où λc est la longueur d'onde centrale, Δn l'écart n2-n1 des indices et 〈n〉 l'indice moyen entre les deux matériaux.The width of the band Δλ of such a mirror is expressed as follows: Δλ = λ vs · 2 π · Δ not <not> where λ c is the central wavelength, Δ n the difference n 2 -n 1 of the indices and 〈n〉 the average index between the two materials.

Il apparaît que la largeur de la bande est liée essentiellement à la différence entre l'indice haut et l'indice bas.It appears that the width of the strip is essentially linked to the difference between the high index and the low index.

Les matériaux les plus utilisés pour de tels miroirs sont les suivants : l'oxyde de silicium (SiO2), l'oxyde de titane (TiO2), l'oxyde de hafnium (HfO2) et l'oxyde de zirconium (ZrO2) ; SiO2 étant utilisé comme matériau de bas indice.The most commonly used materials for such mirrors are: silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), hafnium oxide (HfO 2 ) and zirconium oxide (ZrO 2 ); SiO 2 being used as a low index material.

Parmi ces matériaux le TiO2 possède l'indice de réfraction le plus élevé (n=2,45) et est donc retenu avec le SiO2 pour la réalisation de miroirs à large bande.Among these materials, TiO 2 has the highest refractive index (n = 2.45) and is therefore used with SiO 2 for the production of broadband mirrors.

Malheureusement, comme l'explique le document (2), les miroirs réalisés avec le couple de matériaux TiO2-SiO2 n'ont pas une très bonne tenue au flux laser, comparativement aux miroirs réalisés avec les couples HFO2-SiO2 ou ZrO2-SiO2. Le TiO2 est donc écarté.Unfortunately, as explained in document (2), the mirrors produced with the pair of TiO 2 -SiO 2 materials do not have very good resistance to laser flux, compared to the mirrors produced with the HFO 2 -SiO 2 couples or ZrO 2 -SiO 2 . TiO 2 is therefore ruled out.

Les conditions de bande large et de bonne réflectivité apparaissent comme difficilement conciliables avec une tenue satisfaisante aux flux laser intenses.The conditions of wide band and good reflectivity appear to be difficult to reconcile with a satisfactory resistance to intense laser fluxes.

Une solution au problème, évoquée dans le document (3) aux pages 175 et suivantes, consiste de façon connue d'empiler deux miroirs de Bragg, les miroirs étant centrés sur deux longueurs d'ondes décalées λ1 et λ2. Les longueurs d'onde λ1 et λ2 sont choisies suffisamment proches pour ne pas introduire de discontinuité notable dans la bande de réflexion du miroir résultant. Cette bande est en quelque sorte la somme des bandes de réflexion des deux miroirs individuels. Les bandes de réflexion des miroirs individuels peuvent donc être un peu moins larges, ce qui permet d'utiliser les couples de matériaux présentant une différence d'indices plus faible mais ayant une meilleure tenue au flux.One solution to the problem, mentioned in document (3) on pages 175 and following, consists in a known manner of stacking two Bragg mirrors, the mirrors being centered on two offset wavelengths λ 1 and λ 2 . The wavelengths λ 1 and λ 2 are chosen close enough not to introduce any significant discontinuity in the reflection band of the resulting mirror. This strip is somehow the sum of the reflection strips of the two individual mirrors. The reflection bands of the individual mirrors can therefore be a little narrower, which makes it possible to use the pairs of materials having a smaller index difference but having better resistance to flow.

Un tel miroir n'est pas tout à fait satisfaisant. Outre des problèmes de réflectivité réduite dans la partie de recouvrement des bandes spectrales des deux miroirs de Bragg, une telle structure pêche par la difficulté technologique de sa réalisation. En effet, l'empilement de deux miroirs entraîne une augmentation conséquente de l'épaisseur de la structure. L'empilement qui peut atteindre plus de 5 µm pour un miroir de réflectivité supérieur à 99,5% est très fragile. De plus, des contraintes mécaniques internes augmentent encore le risque de destruction de la structure. Etant donné le choix restreint des matériaux pour réaliser les empilements, il est difficile de répondre aussi aux exigences de tenue mécanique. Le rendement de la fabrication en est réduit et le coût des miroirs doubles devient trop important.Such a mirror is not entirely satisfactory. In addition to problems of reduced reflectivity in the portion of overlap of the spectral bands of the two Bragg mirrors, such a structure suffers from the technological difficulty of its production. Indeed, the stacking of two mirrors results in a substantial increase in the thickness of the structure. The stack which can reach more than 5 μm for a reflectivity mirror greater than 99.5% is very fragile. In addition, internal mechanical stresses further increase the risk of destruction of the structure. Given the limited choice of materials to make the stacks, it is difficult to also meet the mechanical strength requirements. The production yield is reduced and the cost of the double mirrors becomes too high.

Par ailleurs, et comme évoqué plus haut, l'empilement des deux miroirs de Bragg forme en quelque sorte une cavité de type Pérot-Fabry qui génère un pic de transmission important dans la bande spectrale, notamment pour des longueurs d'onde situées à l'intersection des bandes de réflexion des miroirs individuels. Finalement, une structure de miroir double ne constitue pas une solution satisfaisante.Furthermore, and as mentioned above, the stacking of the two Bragg mirrors forms a sort of Perot-Fabry type cavity which generates a significant transmission peak in the spectral band, in particular for wavelengths located at 1 intersection of the reflection bands of the individual mirrors. Finally, a double mirror structure is not a satisfactory solution.

Pour obtenir un miroir à large bande, une autre possibilité encore, également évoquée dans le document (3) consiste à réaliser un empilement dont chaque couche a une épaisseur optique égale à

Figure imgb0003
où λo est la longueur d'onde de centrage de la bande du miroir et δλ un écart autour de λo calculé pour chaque couche.To obtain a broadband mirror, yet another possibility, also mentioned in document (3), consists in making a stack of which each layer has an optical thickness equal to
Figure imgb0003
where λ o is the centering wavelength of the mirror strip and δλ a deviation around λ o calculated for each layer.

Un tel miroir est difficile et cher à réaliser en raison notamment de la nécessité de déterminer δλ pour chaque couche, la nécessité d'un contrôle très précis de l'épaisseur des couches, et en raison du nombre de couches important qui est indispensable pour obtenir une réflectivité convenable sur toute la bande spectrale du miroir.Such a mirror is difficult and expensive to produce, in particular because of the need to determine δλ for each layer, the need for very precise control of the thickness of the layers, and because of the large number of layers which is essential to obtain a suitable reflectivity over the entire spectral band of the mirror.

Finalement, il apparaît qu'il est très difficile d'obtenir des miroirs adaptés par exemple aux lasers accordables à flux intense, pour un coût de fabrication raisonnable.Finally, it appears that it is very difficult to obtain mirrors suitable for example for tunable lasers with intense flux, for a reasonable manufacturing cost.

Un objet de la présente invention est de fournir un miroir de forte réflectivité, de large bande passante et de bonne tenue au flux lumineux laser ne présentant pas les inconvénients des miroirs de l'art antérieur évoqués dans ce qui précède.An object of the present invention is to provide a mirror with high reflectivity, wide bandwidth and good resistance to laser light flux which does not have the drawbacks of the mirrors of the prior art mentioned in the foregoing.

Un autre objet est de proposer un procédé de réalisation d'un tel miroir.Another object is to propose a method for producing such a mirror.

EXPOSE DE L'INVENTIONSTATEMENT OF THE INVENTION

Le miroir de l'invention associe un miroir composé de couches discrètes alternées d'indice n1 et n2 et une couche d'indice continûment variable.The mirror of the invention combines a mirror composed of alternating discrete layers of index n 1 and n 2 and a layer of continuously variable index.

A cet effet, le miroir de l'invention comporte un substrat, un empilement disposé sur le substrat et formé d'une alternance de couches d'un premier matériau ayant un premier indice de réfraction et de couches d'un second matériau ayant un second indice de réfraction supérieur au premier indice de réfraction, et une couche d'un troisième matériau disposée sur l'empilement, ladite couche présentant un indice de réfraction qui varie selon un profil continu. La couche du troisième matériau ne présente donc pas de "sauts d'indice" d'une valeur a une autre comme l'empilement.To this end, the mirror of the invention comprises a substrate, a stack placed on the substrate and formed by alternating layers of a first material having a first refractive index and layers of a second material having a second refractive index greater than the first refractive index, and a layer of a third material disposed on the stack, said layer having a refractive index which varies according to a continuous profile. The layer of the third material therefore does not have "index hops" from one value to another, such as stacking.

En adaptant le profil d'indice de cette couche aux conditions d'utilisation du miroir, il est possible non seulement d'augmenter la bande de réflexion et la réflectivité du miroir, mais aussi de réduire de manière importante le champ électrique du flux lumineux pénétrant dans l'empilement de couches discrètes. Selon un aspect de l'invention, le profil de l'indice est choisi périodique, par exemple sinusoïdal. Le calcul du profil d'indice de réfraction est obtenu par exemple avec un algorithme dit de recuit et de minimisation d'entropie, détaillé dans le document (4).By adapting the index profile of this layer to the conditions of use of the mirror, it is possible not only to increase the reflection band and the reflectivity of the mirror, but also to significantly reduce the electric field of the penetrating light flux. in the stack of discrete layers. According to one aspect of the invention, the profile of the index is chosen to be periodic, for example sinusoidal. The calculation of the refractive index profile is obtained for example with a so-called annealing and entropy minimization algorithm, detailed in the document (4).

Dans cet algorithme, la fonction Ci représente l'écart entre les propriétés optiques calculées et les propriétés optiques recherchées pour une configuration i donnée de paramètres.In this algorithm, the function Ci represents the difference between the calculated optical properties and the optical properties sought for a given configuration i of parameters.

ΔCi étant une variation de cette fonction après une perturbation élémentaire.ΔCi being a variation of this function after an elementary disturbance.

Après chaque perturbation, les propriétés optiques peuvent être calculées par un modèle matriciel pour des couches homogènes isotropes à face plane parallèle. Le principe de ce calcul est donné en détail par exemple dans le document (1).After each perturbation, the optical properties can be calculated by a matrix model for homogeneous isotropic layers with a parallel plane face. The principle of this calculation is given in detail for example in document (1).

Pour ce calcul, la couche à variation continue d'indice est décomposée en couches discrètes. Par exemple, une période de sinusoïde peut être décomposée en 30 couches élémentaires auxquelles sont associées des matrices caractéristiques. Le produit de ces matrices et de matrices associées au miroir de Bragg formé par l'empilement donne les propriétés optiques de l'ensemble de la structure. Pour ces calculs, on se référera utilement au document (5).For this calculation, the continuously variable index layer is broken down into discrete layers. For example, a sinusoid period can be broken down into 30 elementary layers with which characteristic matrices are associated. The product of these matrices and matrices associated with the Bragg mirror formed by the stack gives the optical properties of the entire structure. For these calculations, we will usefully refer to document (5).

Ainsi, la couche à indice variable permet-elle non seulement d'élargir la bande spectrale du miroir et d'augmenter sa réflectivité, mais aussi de protéger l'empilement des champs électriques trop élevés.Thus, the variable index layer not only makes it possible to widen the spectral band of the mirror and to increase its reflectivity, but also to protect the stack from excessively high electric fields.

L'empilement est réalisé préférentiellement avec le couple de matériaux SiO2-TiO2 choisi car il permet de réaliser des miroirs qui possèdent des largeurs de bande spectrale plus grandes que celles des miroirs réalisés avec d'autres couples de matériaux. L'empilement peut constituer un miroir de Bragg.The stacking is preferably carried out with the pair of materials SiO 2 -TiO 2 chosen because it makes it possible to produce mirrors which have spectral bandwidths greater than those of the mirrors produced with other pairs of materials. The stack can constitute a Bragg mirror.

Dans ce cas, l'épaisseur de chacune des couches de l'empilement est égale à λo/4 où λo est la longueur d'onde de centrage du miroir. Grâce à la couche à indice variable, cet empilement est soumis à un flux plus modéré que le flux incident.In this case, the thickness of each of the layers of the stack is equal to λo / 4 where λo is the centering wavelength of the mirror. Thanks to the variable index layer, this stack is subjected to a more moderate flux than the incident flux.

Selon une variante intéressante, le miroir comporte en outre une couche métallique disposée entre le substrat et l'empilement. Cette couche métallique permet d'accroître la réflectivité du miroir et par conséquent de réduire le nombre de couches de l'empilement. L'aluminium est un exemple de métal convenant bien en raison de sa forte réflectivité et de la large bande spectrale de réflexion.According to an advantageous variant, the mirror also comprises a metal layer disposed between the substrate and the stack. This metallic layer makes it possible to increase the reflectivity of the mirror and consequently to reduce the number of layers of the stack. Aluminum is an example of a metal suitable because of its high reflectivity and the wide spectral reflection band.

Avantageusement, le substrat peut être réalisé en silice, en quartz, en verre ou en céramique. Le choix du substrat peut influer sur la réponse spectrale recherchée. Toutefois, dans le cas où une couche métallique est prévue pour augmenter la réflectivité du miroir, le substrat sera choisi en fonction d'autres propriétés, telles que sa conduction thermique.Advantageously, the substrate can be made of silica, quartz, glass or ceramic. The choice of substrate can influence the desired spectral response. However, in the case where a metal layer is provided to increase the reflectivity of the mirror, the substrate will be chosen according to other properties, such as its thermal conduction.

Pour réaliser un miroir conforme à l'invention, on a avantageusement recours à un procédé comportant les étapes suivantes :

  • a) - dépôt sur un substrat d'une couche métallique,
  • b) - formation sur la couche métallique d'un empilement alterné de couches d'un premier et d'un second matériaux ayant respectivement un premier indice de réfraction et un second indice de réfraction supérieur au premier indice de réfraction,
  • c) - formation sur l'empilement d'une couche d'un troisième matériau présentant un indice de réfraction qui varie selon un profil continu.
To make a mirror in accordance with the invention, a process is advantageously used comprising the following steps:
  • a) - deposition on a substrate of a metal layer,
  • b) - formation on the metallic layer of an alternating stack of layers of a first and a second material having respectively a first refractive index and a second refractive index higher than the first refractive index,
  • c) - formation on the stack of a layer of a third material having a refractive index which varies according to a continuous profile.

L'empilement alterné est réalisé, par exemple, selon une technique de pulvérisation par faisceau d'ions dite IBS (Ion Beam Sputtering). Cette technique de dépôt est très avantageuse pour le dépôt de diélectriques en raison de son caractère énergétique. Elle permet d'obtenir des matériaux denses, et d'indice optique élevé, très intéressants dans le cadre de la présente application. Une illustration en est donnée notamment dans le document (6).Alternating stacking is carried out, for example, using an ion beam sputtering technique called IBS (Ion Beam Sputtering). This deposition technique is very advantageous for the deposition of dielectrics because of its energy character. It makes it possible to obtain dense materials, and of high optical index, which are very advantageous in the context of the present application. An illustration is given in particular in document (6).

Pour la couche à indice variable, pour laquelle un contrôle très précis du dépôt est requis, on utilise de préférence une technique de pulvérisation à faisceau d'ions, assistée par faisceau d'ions, dite DIBS (Dual Ion Beam Sputtering).For the variable index layer, for which a very precise deposit control is required, a beam spraying technique is preferably used. ion, assisted by ion beam, called DIBS (Dual Ion Beam Sputtering).

Un exemple de la technique DIBS est illustré par la publication de S.J. Holmes dans le document (7).An example of the DIBS technique is illustrated by the publication of S.J. Holmes in document (7).

Cette technique, mettant en oeuvre une cible de silicium dans une atmosphère réactive d'oxygène et d'azote permet de contrôler finement la réalisation d'un dépôt d'oxynitrure de silicium dont le profil d'indice peut être ajusté continûment en modulant la pression partielle d'oxygène par rapport à la pression partielle d'azote.This technique, using a silicon target in a reactive oxygen and nitrogen atmosphere, allows fine control of the production of a silicon oxynitride deposit, the index profile of which can be continuously adjusted by modulating the pressure. partial oxygen with respect to partial nitrogen pressure.

BREVE DESCRIPTION DES FIGURESBRIEF DESCRIPTION OF THE FIGURES

  • la figure 1 est une coupe schématique d'un miroir selon l'invention,FIG. 1 is a schematic section of a mirror according to the invention,
  • la figure 2 représente le profil d'indice d'une couche à indice variable et d'un empilement alterné, conformes à un aspect de l'invention,FIG. 2 represents the index profile of a variable index layer and of an alternating stack, in accordance with one aspect of the invention,
  • la figure 3 représente graphiquement la bande spectrale d'un miroir connu et de miroirs selon l'invention,FIG. 3 graphically represents the spectral band of a known mirror and of mirrors according to the invention,
  • les figures 4 à 7 illustrent les composantes parallèles et perpendiculaires du champ électrique d'un flux incident, dans le miroir de l'invention.Figures 4 to 7 illustrate the parallel and perpendicular components of the electric field of an incident flux, in the mirror of the invention.
DESCRIPTION DETAILLEE D'UN MODE DE REALISATIONDETAILED DESCRIPTION OF AN EMBODIMENT

La structure du miroir 1 représentée à la figure 1 comporte une couche métallique 2, un empilement alterné 4, par exemple un miroir de Bragg, et une couche à indice variable 6, empilés dans cet ordre sur un substrat 8. Dans la réalisation décrite à titre d'exemple, le miroir 1 est centré sur une longueur d'onde λo=652 nm et a une largeur de bande spectrale Δλ=145 nm avec une réflectivité R≧99,7% pour un flux arrivant à 45° en polarisation P.The structure of the mirror 1 represented in FIG. 1 comprises a metal layer 2, an alternating stack 4, for example a Bragg mirror, and a variable index layer 6, stacked in this order on a substrate 8. In the embodiment described in As an example, mirror 1 is centered on a wavelength λ o = 652 nm and has a spectral bandwidth Δλ = 145 nm with a reflectivity R ≧ 99.7% for a flux arriving at 45 ° in polarization P.

Le substrat ne joue dans cette réalisation aucun rôle optique, dans la mesure où il est recouvert par la couche métallique 2. Le substrat est réalisé par exemple en silicium.The substrate plays no optical role in this embodiment, insofar as it is covered by the metal layer 2. The substrate is made for example of silicon.

Pour la couche 2, on peut choisir des métaux tels que l'aluminium ou l'argent qui ont l'avantage d'une bonne réflectivité dans le spectre visible et infrarouge et d'une bande spectrale étendue. Toutefois, l'aluminium est préféré à l'argent dans la mesure où sa dégradation au contact de l'air est moins rapide.For layer 2, metals such as aluminum or silver can be chosen which have the advantage of good reflectivity in the visible and infrared spectrum and an extended spectral band. However, aluminum is preferred to silver since its degradation in contact with air is less rapid.

Le dépôt de cette couche a lieu par exemple par une technique traditionnelle de dépôt par évaporation sous vide.The deposition of this layer takes place for example by a traditional deposition technique by vacuum evaporation.

L'empilement 4 est réalisé de préférence par une technique de pulvérisation par faisceau d'ions. Dans le présent exemple, l'empilement 4 est un miroir de Bragg qui comporte sept paires de couches alternées.The stack 4 is preferably produced by an ion beam spraying technique. In the present example, the stack 4 is a Bragg mirror which comprises seven pairs of alternating layers.

Chaque paire de couches est formée d'une couche 12 de TiO2 d'indice de réfraction n2=2,4 et d'une épaisseur de 68 nm et d'une couche 14 de SiO2 d'indice de réfraction n1=1,48 et d'épaisseur 110 nm.Each pair of layers is formed of a layer 12 of TiO 2 with a refractive index n 2 = 2.4 and a thickness of 68 nm and a layer 14 of SiO 2 with a refractive index n 1 = 1.48 and 110 nm thick.

La couche 6 à indice variable est réalisée selon la technique DIBS. Dans le cadre de l'exemple décrit, le profil d'indice, choisi sinusoïdal, est optimisé pour la condition particulièrement difficile d'une polarisation P à 45° (π/4 radians) d'incidence.Layer 6 with variable index is produced according to the DIBS technique. In the context of the example described, the index profile, chosen sinusoidal, is optimized for the particularly difficult condition of a P polarization at 45 ° (π / 4 radians) of incidence.

La couche 6, en oxynitrure de silicium présente un indice de réfraction centré sur 〈n〉=1,8 et variant avec une amplitude Δn=±0,3 selon une période p=205 nm et avec une phase à l'origine φ=4 radians.Layer 6, made of silicon oxynitride has a refractive index centered on 〈n〉 = 1.8 and varying with an amplitude Δn = ± 0.3 according to a period p = 205 nm and with a phase at the origin φ = 4 radians.

L'indice n varie selon une direction perpendiculaire à la couche 6 et en fonction d'une épaisseur z mesurée à partir de la surface 20 du miroir.The index n varies in a direction perpendicular to the layer 6 and as a function of a thickness z measured from the surface 20 of the mirror.

La valeur de l'indice en fonction de z est donnée par la formule : n(z) = 〈n〉 + Δn.sin p z+φ

Figure imgb0004
The value of the index as a function of z is given by the formula: n (z) = 〈n〉 + Δn.sin p z + φ
Figure imgb0004

La figure 2 illustre le profil d'indice du miroir.Figure 2 illustrates the index profile of the mirror.

L'indice, reporté en ordonnée, est exprimé en fonction de l'épaisseur z mesurée à partir de la surface 20, reportée en abscisse et exprimée en nanomètres.The index, plotted on the ordinate, is expressed as a function of the thickness z measured from the surface 20, plotted on the abscissa and expressed in nanometers.

On vérifie que l'indice de réfraction de la couche 6 varie sinusoïdalement entre 1,5 et 2,1 avec une période de 205 nm. Le miroir de Bragg se distingue par des valeurs discontinues d'indices correspondant à n=1,48 pour le SiO2 et n2=2,4 pour le TiO2.It is verified that the refractive index of layer 6 varies sinusoidally between 1.5 and 2.1 with a period of 205 nm. The Bragg mirror is distinguished by discontinuous index values corresponding to n = 1.48 for SiO 2 and n 2 = 2.4 for TiO 2 .

La figure 3 met en évidence l'augmentation de la réflectivité et l'élargissement de la bande spectrale du miroir selon l'invention.FIG. 3 shows the increase in reflectivity and the widening of the spectral band of the mirror according to the invention.

Sur cette figure, la courbe 21 donne la réflectivité en fonction de la longueur d'onde d'un miroir traditionnel formé d'une couche métallique et d'un miroir de Bragg centré sur 652 nm.In this figure, curve 21 gives the reflectivity as a function of the wavelength of a traditional mirror formed of a metallic layer and of a Bragg mirror centered on 652 nm.

Les courbes 22 et 24 correspondent à un miroir selon l'invention où la couche à indice variable d'oxynitrure de silicium (SiON) a été respectivement optimisée pour élargir la bande spectrale vers les petites et les grandes longueurs d'onde. On constate que la largeur de la bande des miroirs selon l'invention, respectivement 150 nm et 160 nm est bien supérieure à la largeur spectrale de la bande du miroir classique correspondant à la courbe 21, qui est de 105 nm.Curves 22 and 24 correspond to a mirror according to the invention where the variable index layer of silicon oxynitride (SiON) has been optimized respectively to widen the spectral band towards short and long wavelengths. It can be seen that the width of the strip of the mirrors according to the invention, respectively 150 nm and 160 nm is much greater than the spectral width of the strip of the conventional mirror corresponding to curve 21, which is 105 nm.

Par ailleurs, la couche d'oxynitrure de silicium du miroir selon l'invention permet de réduire dans des proportions importantes le champ électrique du flux incident qui entre dans le miroir de Bragg.Furthermore, the layer of silicon oxynitride of the mirror according to the invention makes it possible to reduce in significant proportions the electric field of the incident flux which enters the Bragg mirror.

Pour exprimer ce champ on le décompose en une composante Ep parallèle au plan d'incidence du miroir et en une composante Es perpendiculaire au plan d'incidence.To express this field we decompose it into a component Ep parallel to the plane of incidence of the mirror and in a component Es perpendicular to the plane of incidence.

Les figures 4 à 7 donnent les composantes perpendiculaire S et parallèle P du champ électrique en fonction de l'épaisseur z du miroir décrit dans ce qui précède et pour différentes longueurs d'onde choisies dans la bande spectrale du miroir où la réflectivité est supérieure à 99,7% (680, 625, 600 et 550 nm).Figures 4 to 7 give the perpendicular S and parallel P components of the electric field as a function of the thickness z of the mirror described in the above and for different wavelengths chosen in the spectral band of the mirror where the reflectivity is greater than 99.7% (680, 625, 600 and 550 nm).

A la figure 4, les composantes S et P du champ sont respectivement représentées par des courbes de référence 426 et 428. Elles correspondent à un flux incident à 45° ayant une longueur d'onde de l'ordre de 680 nm.In FIG. 4, the components S and P of the field are respectively represented by reference curves 426 and 428. They correspond to an incident flux at 45 ° having a wavelength on the order of 680 nm.

On distingue sur la figure 4 une première région 430 correspondant à la couche à indice variable 6, une seconde région 432 correspondant au miroir de Bragg 4 où des pointillés 433 rappellent les couches 12, 14, et une troisième région 434 correspondant à la couche d'aluminium. Dans la région 432, on peut noter des discontinuités 436 correspondant aux interfaces entre couches de haut et bas indice de réfraction.A first region 430 corresponding to the variable index layer 6 is distinguished in FIG. 4, a second region 432 corresponding to the Bragg mirror 4 where dotted lines 433 recall the layers 12, 14, and a third region 434 corresponding to the layer d 'aluminum. In region 432, we can note discontinuities 436 corresponding to the interfaces between layers of high and low refractive index.

Sur les figures 5, 6 et 7 qui correspondent toujours à un flux incident à 45°, mais pour des longueurs d'onde respectivement de l'ordre de 625, 600 et 550 nm, les éléments correspondant à ceux de la figure 4 portent des références correspondantes mais dont le chiffre des centaines indique le numéro de la figure.In FIGS. 5, 6 and 7 which always correspond to an incident flux at 45 °, but for wavelengths respectively of the order of 625, 600 and 550 nm, the elements corresponding to those of FIG. 4 carry corresponding references but whose hundreds figure indicates the figure number.

De manière générale, on constate sur les figures 4 à 7 que grâce à la couche à indice variable pour des longueurs d'onde assez proches de λo, le champ électrique atteignant l'empilement 4 est nettement atténué par rapport au champ électrique à la surface. L'empilement est donc protégé des flux très intenses.Generally, it can be seen in FIGS. 4 to 7 that, thanks to the variable index layer for wavelengths fairly close to λo, the electric field reaching stack 4 is clearly attenuated compared to the electric field at the surface. . The stack is therefore protected from very intense flows.

LES DOCUMENTS MENTIONNES DANS CE QUI PRECEDE PORTENT LES REFERENCES SUIVANTES :THE DOCUMENTS MENTIONED IN THE FOREGOING HAVE THE FOLLOWING REFERENCES:

  • (1) OPTICAL WAVES IN LAYERED MEDIA/POSCHI YEH ED. Willey interscience(1) OPTICAL WAVES IN LAYERED MEDIA / POSCHI YEH ED. Willey interscience
  • (2) Laser conditioning of optical thin films CR WOLFE & al. N.I.S.T. public Boulder dammage symposium, CO USA 1989, p.360-375(2) Laser conditioning of optical thin films CR WOLFE & al. N.I.S.T. public Boulder dammage symposium, CO USA 1989, p.360-375
  • (3) THIN FILM OPTICAL FILTERS HA MACLEOD, ed. Adam hilger (second edition)(3) THIN FILM OPTICAL FILTERS HA MACLEOD, ed. Adam hilger (second edition)
  • (4) SIMULATED ANNEALING : THEORY AND APPLICATIONS PJM VAN LAARHOVEN 1 EHL AARTS Kluwer academic publishers(4) SIMULATED ANNEALING: THEORY AND APPLICATIONS PJM VAN LAARHOVEN 1 EHL AARTS Kluwer academic publishers
  • (5) Evaluation et réalisation de miroirs diélectriques à profil d'indice continu et périodique (filtres rugates).
    thèse de docteur de l'université Joseph Fourier - Grenoble 1
    L NOUVFLOT, mai 1993
    (5) Evaluation and production of dielectric mirrors with a continuous and periodic index profile (rugate filters).
    PhD thesis from Joseph Fourier University - Grenoble 1
    L NOUVFLOT, May 1993
  • (6) Réalisation de couches minces de TiO2 et SiO2 en pulvérisation par faisceau d'ions Mémoire d'ingénieur C.N.A.M. M IDA 1990(6) Production of thin layers of TiO 2 and SiO 2 by ion beam spraying CNAM engineering thesis M IDA 1990
  • (7) Conférence SOCIETY OF VACUUM COATERS DALLAS 1993
    Reactive ion beam sputter deposition of gradded interface optical thin films of aluminium oxynitride and siliconoxynitride SJ HOLMES & al. Northrop corporation
    (7) SOCIETY OF VACUUM COATERS DALLAS 1993 conference
    Reactive ion beam sputter deposition of gradded interface optical thin films of aluminum oxynitride and siliconoxynitride SJ HOLMES & al. Northrop corporation

Claims (11)

Miroir à large bande et à haute réflectivité comportant un empilement (4) disposé sur un substrat (8) et formé d'une alternance de couches (12, 14) d'un premier matériau ayant un premier indice de réfraction (n1) et de couches d'un second matériau ayant un second indice de réfraction (n2) supérieur au premier indice de réfraction (n1), caractérisé en ce qu'il comporte en outre une couche de surface (6) d'un troisième matériau disposée sur l'empilement, ladite couche présentant un indice de réfraction qui varie selon un profil continu.Broadband mirror with high reflectivity comprising a stack (4) disposed on a substrate (8) and formed by alternating layers (12, 14) of a first material having a first refractive index (n 1 ) and layers of a second material having a second refractive index (n 2 ) greater than the first refractive index (n 1 ), characterized in that it also comprises a surface layer (6) of a third material arranged on the stack, said layer having a refractive index which varies according to a continuous profile. Miroir selon la revendication 1, caractérisé en ce que l'indice de réfraction de la couche de surface (6) varie selon un profil continu périodique.Mirror according to claim 1, characterized in that the refractive index of the surface layer (6) varies according to a periodic continuous profile. Miroir selon l'une des revendications 1 ou 2, caractérisé en ce que l'indice de réfraction de la couche de surface (6) varie selon un profil sinusoïdal.Mirror according to one of claims 1 or 2, characterized in that the refractive index of the surface layer (6) varies according to a sinusoidal profile. Miroir selon l'une quelconque des revendications précédentes, caractérisé en ce que le substrat (8) est réalisé en un matériau choisi parmi la silice, le quartz et le verre.Mirror according to any one of the preceding claims, characterized in that the substrate (8) is made of a material chosen from silica, quartz and glass. Miroir selon l'une quelconque des revendications précédentes, caractérisé en ce qu'il comporte en outre une couche métallique (2) disposée entre le substrat (8) et l'empilement (4), de manière à accroître la réflectivité du miroir (1).Mirror according to any one of the preceding claims, characterized in that it further comprises a metal layer (2) disposed between the substrate (8) and the stack (4), so as to increase the reflectivity of the mirror (1 ). Miroir selon la revendication 5, caractérisé en ce que la couche métallique (2) est une couche d'aluminium.Mirror according to claim 5, characterized in that the metallic layer (2) is a layer of aluminum. miroir selon l'une quelconque des revendications précédentes, caractérisé en ce que le premier matériau est du SiO2 et le second matériau est du TiO2.mirror according to any one of the preceding claims, characterized in that the first material is SiO 2 and the second material is TiO 2 . Procédé de réalisation d'un miroir à large bande et haute réflectivité, caractérisé en ce qu'il comprend les étapes suivantes : a) - dépôt sur un substrat (8) d'une couche métallique (2), b) - formation sur la couche métallique d'un empilement alterné (4) de couches (12, 14) d'un premier et d'un second matériau ayant respectivement un premier indice de réfraction (n1) et un second indice de réfraction (n2) supérieur au premier indice de réfraction, c) - formation sur l'empilement d'une couche d'un troisième matériau présentant un indice de réfraction qui varie selon un profil continu et périodique. Method for producing a broadband and high reflectivity mirror, characterized in that it comprises the following steps: a) - deposition on a substrate (8) of a metal layer (2), b) - formation on the metallic layer of an alternating stack (4) of layers (12, 14) of a first and a second material having respectively a first refractive index (n 1 ) and a second refractive index (n 2 ) greater than the first refractive index, c) - formation on the stack of a layer of a third material having a refractive index which varies according to a continuous and periodic profile. Procédé selon la revendication 8, caractérisé en ce que l'empilement est réalisé selon une technique de pulvérisation par faisceau d'ions.Method according to claim 8, characterized in that the stacking is carried out according to an ion beam spraying technique. Procédé selon l'une des revendications 8 ou 9, caractérisé en ce que la couche à indice variable est réalisée selon une technique de pulvérisation par faisceau d'ions assistée par faisceau d'ions.Method according to one of claims 8 or 9, characterized in that the variable index layer is produced according to an ion beam spraying technique assisted by ion beam. Procédé selon la revendication 8, caractérisé en ce que la couche de troisième matériau est une couche d'oxynitrure de silicium.Method according to claim 8, characterized in that the layer of third material is a layer of silicon oxynitride.
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US5835273A (en) 1998-11-10
FR2712990B1 (en) 1996-04-05

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