EP0670587A1 - Plasma asher with microwave trap - Google Patents
Plasma asher with microwave trap Download PDFInfo
- Publication number
- EP0670587A1 EP0670587A1 EP95102332A EP95102332A EP0670587A1 EP 0670587 A1 EP0670587 A1 EP 0670587A1 EP 95102332 A EP95102332 A EP 95102332A EP 95102332 A EP95102332 A EP 95102332A EP 0670587 A1 EP0670587 A1 EP 0670587A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- microwave
- asher
- enclosure
- conductor
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
- H01J37/32275—Microwave reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/76—Prevention of microwave leakage, e.g. door sealings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
- H05B6/806—Apparatus for specific applications for laboratory use
Definitions
- the present invention is directed to a plasma afterglow asher in which microwave leakage, and its resultant disadvantages are eliminated.
- photoresists are used as masks, and after the masking function is completed, it is necessary to remove the photoresist from the semiconductor wafer.
- One type of device for stripping such photoresists is known as a plasma afterglow asher.
- a gas such as oxygen which travels through a tube which runs through a microwave enclosure is excited to a plasma state by microwave energy.
- the tube exits from the microwave enclosure through an opening, and travels to the region of the semiconductor wafer which is to be stripped.
- the idea of the device is to effect the stripping with excited atomic species which are present in the tube as extended out of the microwave enclosure (hence the name "afterglow"), rather than with the excited ionic species which are present within the part of the tube which is within the microwave enclosure, and in which the plasma is generated.
- the above problems are solved by providing a microwave trap exterior to the microwave enclosure proximate to the opening through which the plasma tube passes for trapping microwave energy which passes through the opening.
- the microwave trap is such as to reduce the microwave current reaching the exit to zero.
- an equivalent resonant circuit is created, which is effective to reduce the current in the device to zero.
- the trap is comprised of coaxial inner and outer conductors, wherein the diameter of the outer conductor becomes smaller at a region displaced from the microwave enclosure and wherein the smaller diameter part of the outer conductor is spaced from the inner conductor by a gap.
- the microwave trap is effective to eliminate microwave leakage, which has resulted in the following advantages:
- Figure 1 is a schematic representation of the asher system in accordance with an embodiment of the invention.
- Figure 2 is a plan view of the embodiment of Figure 1.
- Figure 3 is a cross-sectional view of a microwave trap in accordance with an embodiment of the invention.
- Figure 4 shows an equivalent distributed circuit for the device of Figure 3.
- Figures 5 and 6 show the part that forms the inner conductor of the coaxial device shown in Figure 3.
- Figures 7 and 8 show the part that forms the outer conductor of the coaxial device shown in Figure 3.
- FIG. 9 shows a microwave trap in accordance with a further embodiment of the invention.
- Figures 10 and 11 show the field pattern of a TM010 cylindrical cavity and an equivalent distributed circuit for the device of Figure 9.
- Semiconductor wafer 1 has a photoresist on its top surface which is to be stripped. Wafer 1 sits on support 2 which is located in sealed vacuum process chamber 3.
- Plasma tube 5 which is typically made of quartz is disposed in microwave enclosure 4, which is excited by magnetron 12. While the microwave enclosure may take a variety of specific forms, in accordance with the preferred embodiment of the present invention, it is a rectangular TE102 cavity. The length of the cavity is adjusted with slidable short 16, so that tuning may be effected. Holder 18 is attached to microwave enclosure 4 for the purpose of fixing its position relative to the vacuum process chamber 3.
- the plasma tube 5 comprises an end 14, a main portion 6 which is located in the microwave enclosure, a portion 8 which exits from the microwave enclosure, and a portion 10 which feeds down into the evacuated process chamber.
- An excitable gas is fed into the end 14 of plasma tube 5.
- oxygen which may be mixed with other gases such as N2H2 and N2O, is used, but the invention is not limited to the use of any particular gas or gas mixture.
- a plasma is excited by the microwave energy in portion 6 of plasma tube 5, which plasma is comprised of energetic ions, and which radiates light of a color which is dependent on the particular gases which are present.
- the plasma tube in the preferred embodiment has a diameter of about an inch, specifically 25 mm external diameter and 23 mm internal diameter.
- the tube therefore must pass through an opening in the microwave enclosure of at least about an inch in diameter, and from there passes down to the process chamber 3. Since the tube portions 8 and 10 are outside of the microwave enclosure, ideally there is no plasma (energetic ions) excited in these portions. Rather, what is desired is that there be excited or energetic atoms of oxygen (atomic oxygen or 0), which is to be fed onto the photoresist to accomplish the required stripping.
- the plasma is not confined to the part of the plasma tube which is in the microwave enclosure. It is believed that the reason for this is that microwave energy leaks out of the rather large opening which provides egress for the plasma tube.
- a microwave trap is provided which obviates the above-mentioned problems.
- the trap is a coaxial device, and has inner and outer cylindrical conductors 22 and 24, respectively, through which plasma tube 8 passes. It is noted that there is a gap 30 between inner conductor 22 and portion 28 of the outer conductor. Portion 29 abuts the size of microwave enclosure 4.
- Microwave trap 20 is effective to reduce the microwave current to zero in the trap, thus indicating that there is no microwave field.
- the current path in the device is depicted, and an equivalent distributed circuit is represented. It is seen that the current begins on the inside of the inner conductor 22, turns around the top of the inner conductor, and travels down the outside of the inner conductor. It then travels across part 29 and up the inside of outer conductor portion 26. It travels across outer conductor part 27, and then stops, that is, falls to zero at point 34. Thus, there is no current in portion 28 of the outer conductor.
- the equivalent distributed circuit of the device is shown at reference number 36, and is depicted as a parallel LC circuit.
- the inductance L results from the impedance of the short circuited coaxial line (by Part 29), while the capacitance C is the capacitance across the gap or open circuit 30.
- the dimensions of the device are adjusted so that the LC circuit is resonant.
- the long dimension of the outer conductor is about 1/4 wavelength.
- the inner conductor contains four lengthwise slits 32 which are located 90° apart, the purpose of which is to interrupt circumferentially directed currents which may tend to flow on the inner conductor.
- the inner conductor piece 40 is shown. This is secured to the side of microwave enclosure 4 by screws in holes 42.
- the thickness of the inner cylinder is represented by the distance between line 23 and the parallel solid line outside such dotted line.
- the positioning of the lengthwise slits 32 are clearly shown in the plan view of Figure 6.
- Figures 7 and 8 show the outer conductor piece 50 of the coaxial structure.
- the thickness of the coaxial cylinder is the distance between the inner dotted line and the parallel solid line which is exterior to the dotted line.
- Piece 50 is secured to piece 40 by placing surface 54 of piece 50 flush with part 29 of piece 40, and inserting screws in holes 52 of piece 50 and holes 42 of piece 40.
- the microwave trap described above is found to solve the problems which are caused by microwave leakage in the plasma afterglow asher.
- the presence of energetic ions near the wafer is eliminated, as is the wafer damage which is caused by such ions.
- the system is much more stable and reliable than when the trap is not present. This allows the system to be operated through a wide range of operating parameters such as pressure, flow rate, gas type, and power level. Thus the system is more flexible and versatile than in the prior art.
- the UV radiation in the part of the plasma tube which extends out of the microwave enclosure is minimized thus preventing or lessening damage to the semiconductor wafer.
- FIG 9 shows a further embodiment of the invention, wherein the microwave trap 70 comprises a cylindrical TM010 cavity having an opening 72, through which tube 8 passes.
- the cavity is comprised of cylindrical member 74, and opposing circular end pieces 76 and 78.
- the cavity is dimensioned so as to be in resonance in relation to the microwave frequency, the current flowing in the interior of the cylindrical wall 74 falls to zero at the exit end of the trap, thus indicating that there is no microwave field.
- the diameter D of the cylinder is typically 3.7'' - 4.5'', and the length L is typically .375'' - 1.0''.
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Clinical Laboratory Science (AREA)
- General Health & Medical Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Plasma Technology (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
- The present invention is directed to a plasma afterglow asher in which microwave leakage, and its resultant disadvantages are eliminated.
- In the manufacture of semiconductor devices, photoresists are used as masks, and after the masking function is completed, it is necessary to remove the photoresist from the semiconductor wafer. One type of device for stripping such photoresists is known as a plasma afterglow asher. In such a device, a gas such as oxygen which travels through a tube which runs through a microwave enclosure is excited to a plasma state by microwave energy. The tube exits from the microwave enclosure through an opening, and travels to the region of the semiconductor wafer which is to be stripped. The idea of the device is to effect the stripping with excited atomic species which are present in the tube as extended out of the microwave enclosure (hence the name "afterglow"), rather than with the excited ionic species which are present within the part of the tube which is within the microwave enclosure, and in which the plasma is generated.
- However, it has been found in prior art plasma afterglow ashers that microwave energy leaks out of the opening through which the plasma tube exits the microwave enclosure, causing multiple problems, as follows:
- a) Energetic ions are produced in the vicinity of the wafer, which can cause wafer damage. The microwave leakage creates plasma in the part of the tube right outside the microwave enclosure, which plasma is a conductor, which causes further microwave leakage to extend further down the tube. This condition leads to ion acceleration by the electric fields which are now present closer to the wafer and produce energetic ions which cause wafer damage.
- b) Due to electromagnetic interference with surrounding instruments, the microwave circuit becomes extremely unstable, thus reducing system reliability and limiting process capability.
- c) High power applications are impeded by the microwave leakage, stray plasma, and the problems which are associated with system instability.
- d) The ultraviolet radiation which is emitted by the stray plasma is also known to cause wafer damage.
- In accordance with a first aspect of the present invention, the above problems are solved by providing a microwave trap exterior to the microwave enclosure proximate to the opening through which the plasma tube passes for trapping microwave energy which passes through the opening.
- In accordance with a second aspect of the present invention, the microwave trap is such as to reduce the microwave current reaching the exit to zero.
- In accordance with a further aspect of the invention, current flows in the shaped member which comprises the trap extending outwardly from the microwave enclosure, and is reduced to zero in a region between the microwave enclosure and the outer end of the trap.
- In accordance with a still further aspect of the invention, an equivalent resonant circuit is created, which is effective to reduce the current in the device to zero.
- In a preferred embodiment, the trap is comprised of coaxial inner and outer conductors, wherein the diameter of the outer conductor becomes smaller at a region displaced from the microwave enclosure and wherein the smaller diameter part of the outer conductor is spaced from the inner conductor by a gap.
- The microwave trap is effective to eliminate microwave leakage, which has resulted in the following advantages:
- a) Elimination of energetic ions near the photoresist, hence preventing wafer damage.
- b) A tremendous increase in system stability and reliability also leading to an increase in process capability. Accordingly, with the use of the invention, the system can be operated through a wide range of operating parameters (i.e., pressure, flow rate, gas type, and power level).
- c) The UV radiation has also been minimized.
- The invention will be better understood in connection with the accompanying drawings, wherein:
- Figure 1 is a schematic representation of the asher system in accordance with an embodiment of the invention.
- Figure 2 is a plan view of the embodiment of Figure 1.
- Figure 3 is a cross-sectional view of a microwave trap in accordance with an embodiment of the invention.
- Figure 4 shows an equivalent distributed circuit for the device of Figure 3.
- Figures 5 and 6 show the part that forms the inner conductor of the coaxial device shown in Figure 3.
- Figures 7 and 8 show the part that forms the outer conductor of the coaxial device shown in Figure 3.
- Figure 9 shows a microwave trap in accordance with a further embodiment of the invention.
- Figures 10 and 11 show the field pattern of a TM₀₁₀ cylindrical cavity and an equivalent distributed circuit for the device of Figure 9.
- Referring to Figures 1 and 2, a plasma asher device in accordance with an embodiment of the invention is depicted. Semiconductor wafer 1 has a photoresist on its top surface which is to be stripped. Wafer 1 sits on support 2 which is located in sealed
vacuum process chamber 3. - Plasma tube 5, which is typically made of quartz is disposed in
microwave enclosure 4, which is excited bymagnetron 12. While the microwave enclosure may take a variety of specific forms, in accordance with the preferred embodiment of the present invention, it is a rectangular TE₁₀₂ cavity. The length of the cavity is adjusted with slidable short 16, so that tuning may be effected.Holder 18 is attached tomicrowave enclosure 4 for the purpose of fixing its position relative to thevacuum process chamber 3. - Referring again to Figures 1 and 2, it is seen that the plasma tube 5 comprises an
end 14, amain portion 6 which is located in the microwave enclosure, aportion 8 which exits from the microwave enclosure, and aportion 10 which feeds down into the evacuated process chamber. - An excitable gas is fed into the
end 14 of plasma tube 5. Typically, oxygen, which may be mixed with other gases such as N₂H₂ and N₂O, is used, but the invention is not limited to the use of any particular gas or gas mixture. A plasma is excited by the microwave energy inportion 6 of plasma tube 5, which plasma is comprised of energetic ions, and which radiates light of a color which is dependent on the particular gases which are present. - The plasma tube in the preferred embodiment has a diameter of about an inch, specifically 25 mm external diameter and 23 mm internal diameter. The tube therefore must pass through an opening in the microwave enclosure of at least about an inch in diameter, and from there passes down to the
process chamber 3. Since thetube portions - In an actual device, it is found that the plasma is not confined to the part of the plasma tube which is in the microwave enclosure. It is believed that the reason for this is that microwave energy leaks out of the rather large opening which provides egress for the plasma tube.
- This leakage microwave energy causes a number of serious problems to occur, as follows:
- a) Energetic ions are produced in the vicinity of the wafer, which can cause wafer damage. The microwave leakage creates plasma in the part of the tube right outside the microwave enclosure, which plasma is a conductor, which causes further microwave leakage to extend further down the tube. This condition leads to ion acceleration by the electric fields which are now present closer to the wafer and produce energetic ions which cause wafer damage.
- b) Due to electromagnetic interference with surrounding instruments, the microwave circuit becomes extremely unstable, thus reducing system reliability and limiting process capability.
- c) High power applications are impeded by the microwave leakage, stray plasma, and the problems which are associated with system instability.
- d) The ultraviolet radiation which is emitted by the stray plasma is also known to cause wafer damage.
- In accordance with the present invention, a microwave trap is provided which obviates the above-mentioned problems.
- Referring to Figure 3, an embodiment of such a microwave trap is depicted by
reference number 20. The trap is a coaxial device, and has inner and outercylindrical conductors plasma tube 8 passes. It is noted that there is agap 30 betweeninner conductor 22 andportion 28 of the outer conductor.Portion 29 abuts the size ofmicrowave enclosure 4. -
Microwave trap 20 is effective to reduce the microwave current to zero in the trap, thus indicating that there is no microwave field. Referring to Figure 4, the current path in the device is depicted, and an equivalent distributed circuit is represented. It is seen that the current begins on the inside of theinner conductor 22, turns around the top of the inner conductor, and travels down the outside of the inner conductor. It then travels acrosspart 29 and up the inside ofouter conductor portion 26. It travels acrossouter conductor part 27, and then stops, that is, falls to zero atpoint 34. Thus, there is no current inportion 28 of the outer conductor. - The equivalent distributed circuit of the device is shown at
reference number 36, and is depicted as a parallel LC circuit. The inductance L results from the impedance of the short circuited coaxial line (by Part 29), while the capacitance C is the capacitance across the gap oropen circuit 30. In order to cause the current atpoint 34 to fall to zero, the dimensions of the device are adjusted so that the LC circuit is resonant. It is noted that the long dimension of the outer conductor is about 1/4 wavelength. Also, it is noted that the inner conductor contains four lengthwiseslits 32 which are located 90° apart, the purpose of which is to interrupt circumferentially directed currents which may tend to flow on the inner conductor. - Referring to Figure 5, the
inner conductor piece 40 is shown. This is secured to the side ofmicrowave enclosure 4 by screws inholes 42. The thickness of the inner cylinder is represented by the distance betweenline 23 and the parallel solid line outside such dotted line. The positioning of thelengthwise slits 32 are clearly shown in the plan view of Figure 6. - Figures 7 and 8 show the
outer conductor piece 50 of the coaxial structure. The thickness of the coaxial cylinder is the distance between the inner dotted line and the parallel solid line which is exterior to the dotted line. -
Piece 50 is secured to piece 40 by placingsurface 54 ofpiece 50 flush withpart 29 ofpiece 40, and inserting screws inholes 52 ofpiece 50 and holes 42 ofpiece 40. - It is noted that the diameters of the inner and outer conductors across the gap are about the same.
- For a microwave frequency of 2450 Mhz, the dimensions of the preferred embodiment are:
Length of outer conductor (total) = 2.35'' Length of Portion 26 of outer conductor= 1.25'' Length of portion 28 of outer conductor= 1.0'' Diameter of inner conductor (ID) = 1.3'' Diameter of outer conductor (ID) = 2.70'' Length of gap 30= .375'' - The microwave trap described above is found to solve the problems which are caused by microwave leakage in the plasma afterglow asher.
- Thus, the presence of energetic ions near the wafer is eliminated, as is the wafer damage which is caused by such ions. Also, the system is much more stable and reliable than when the trap is not present. This allows the system to be operated through a wide range of operating parameters such as pressure, flow rate, gas type, and power level. Thus the system is more flexible and versatile than in the prior art. Finally, the UV radiation in the part of the plasma tube which extends out of the microwave enclosure is minimized thus preventing or lessening damage to the semiconductor wafer.
- Figure 9 shows a further embodiment of the invention, wherein the
microwave trap 70 comprises a cylindrical TM₀₁₀ cavity having anopening 72, through whichtube 8 passes. The cavity is comprised ofcylindrical member 74, and opposingcircular end pieces cylindrical wall 74 falls to zero at the exit end of the trap, thus indicating that there is no microwave field. - For a microwave frequency of 2450 Mhz, the diameter D of the cylinder is typically 3.7'' - 4.5'', and the length L is typically .375'' - 1.0''.
- The field pattern of a cylindrical TM₀₁₀ cavity is shown in Figure 10, while an equivalent distributed circuit for the embodiment of Figure 9 is depicted in Figure 11. This equivalent circuit is analogous to a shorted radial transmission line.
- While the invention has been described in connection with particular microwave traps, it is noted that other specific designs for such traps may also promote the advantages of the present invention.
- Thus, while the invention has been disclosed herein in accordance with an illustrative embodiments, it is noted that variations will certainly occur to those who are skilled in the art, and the scope of the invention is to be understood by reference to the claims which are appended hereto.
Claims (12)
means for holding said substrate which bears said photoresist,
a microwave enclosure
means for providing microwave energy to said microwave enclosure,
a plasma tube running through said microwave enclosure and exiting said enclosure through an opening, said tube thereafter extending to a region near said photoresist to be stripped,
means for feeding excitable gas through said plasma tube, and
a microwave trap located outside said microwave enclosure proximate said opening through which said plasma tube exits for trapping microwave energy which has escaped through said opening, wherein said microwave trap comprises a resonant circuit.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202187 | 1994-02-25 | ||
US08/202,187 US5498308A (en) | 1994-02-25 | 1994-02-25 | Plasma asher with microwave trap |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0670587A1 true EP0670587A1 (en) | 1995-09-06 |
EP0670587B1 EP0670587B1 (en) | 1999-07-07 |
Family
ID=22748832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95102332A Expired - Lifetime EP0670587B1 (en) | 1994-02-25 | 1995-02-20 | Plasma asher with microwave trap |
Country Status (4)
Country | Link |
---|---|
US (1) | US5498308A (en) |
EP (1) | EP0670587B1 (en) |
JP (1) | JP3190536B2 (en) |
DE (1) | DE69510576T2 (en) |
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US6225745B1 (en) | 1999-12-17 | 2001-05-01 | Axcelis Technologies, Inc. | Dual plasma source for plasma process chamber |
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US20040099283A1 (en) * | 2002-11-26 | 2004-05-27 | Axcelis Technologies, Inc. | Drying process for low-k dielectric films |
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US7338575B2 (en) * | 2004-09-10 | 2008-03-04 | Axcelis Technologies, Inc. | Hydrocarbon dielectric heat transfer fluids for microwave plasma generators |
US7562638B2 (en) * | 2005-12-23 | 2009-07-21 | Lam Research Corporation | Methods and arrangement for implementing highly efficient plasma traps |
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US7554053B2 (en) * | 2005-12-23 | 2009-06-30 | Lam Research Corporation | Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system |
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1994
- 1994-02-25 US US08/202,187 patent/US5498308A/en not_active Expired - Lifetime
-
1995
- 1995-02-20 EP EP95102332A patent/EP0670587B1/en not_active Expired - Lifetime
- 1995-02-20 DE DE69510576T patent/DE69510576T2/en not_active Expired - Fee Related
- 1995-02-27 JP JP03854995A patent/JP3190536B2/en not_active Expired - Fee Related
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6263830B1 (en) | 1999-04-12 | 2001-07-24 | Matrix Integrated Systems, Inc. | Microwave choke for remote plasma generator |
US6352050B2 (en) | 1999-04-12 | 2002-03-05 | Matrix Integrated Systems, Inc. | Remote plasma mixer |
US6412438B2 (en) | 1999-04-12 | 2002-07-02 | Matrix Integrated Systems, Inc. | Downstream sapphire elbow joint for remote plasma generator |
US6439155B1 (en) | 1999-04-12 | 2002-08-27 | Matrix Integratea Systems Inc. | Remote plasma generator with sliding short tuner |
Also Published As
Publication number | Publication date |
---|---|
DE69510576T2 (en) | 2000-01-13 |
EP0670587B1 (en) | 1999-07-07 |
JPH0864584A (en) | 1996-03-08 |
JP3190536B2 (en) | 2001-07-23 |
US5498308A (en) | 1996-03-12 |
DE69510576D1 (en) | 1999-08-12 |
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