EP0582294A3 - - Google Patents

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Publication number
EP0582294A3
EP0582294A3 EP19930112518 EP93112518A EP0582294A3 EP 0582294 A3 EP0582294 A3 EP 0582294A3 EP 19930112518 EP19930112518 EP 19930112518 EP 93112518 A EP93112518 A EP 93112518A EP 0582294 A3 EP0582294 A3 EP 0582294A3
Authority
EP
European Patent Office
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19930112518
Other versions
EP0582294A2 (en
Inventor
Guoliang Shou
Makoto Yamamoto
Sunao Takatori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yozan Inc
Sharp Corp
Original Assignee
Yozan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yozan Inc filed Critical Yozan Inc
Publication of EP0582294A2 publication Critical patent/EP0582294A2/en
Publication of EP0582294A3 publication Critical patent/EP0582294A3/xx
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
EP93112518A 1992-08-05 1993-08-04 Memory device Withdrawn EP0582294A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP229260/92 1992-08-05
JP4229260A JPH0660644A (en) 1992-08-05 1992-08-05 Storage device

Publications (2)

Publication Number Publication Date
EP0582294A2 EP0582294A2 (en) 1994-02-09
EP0582294A3 true EP0582294A3 (en) 1994-04-06

Family

ID=16889331

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93112518A Withdrawn EP0582294A2 (en) 1992-08-05 1993-08-04 Memory device

Country Status (4)

Country Link
US (2) US5477483A (en)
EP (1) EP0582294A2 (en)
JP (1) JPH0660644A (en)
KR (1) KR940004647A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL140183A (en) * 2000-12-07 2007-03-08 Rafael Advanced Defense Sys Method for operating an
US6781459B1 (en) 2003-04-24 2004-08-24 Omega Reception Technologies, Inc. Circuit for improved differential amplifier and other applications
US9269422B2 (en) * 2013-09-30 2016-02-23 Simon Peter Tsaoussis Two transistor ternary random access memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1949406A1 (en) * 1969-09-30 1971-04-22 Siemens Ag Circuit arrangement with at least one bistable memory
JPS51120141A (en) * 1975-04-15 1976-10-21 Toshiba Corp Memory circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3473149A (en) * 1966-05-02 1969-10-14 Sylvania Electric Prod Memory drive circuitry
WO1980000761A1 (en) * 1978-10-03 1980-04-17 Tokyo Shibaura Electric Co Semiconductor memory device
US4455625A (en) * 1981-02-24 1984-06-19 International Business Machines Corporation Random access memory cell
US4387445A (en) * 1981-02-24 1983-06-07 International Business Machines Corporation Random access memory cell
JPS6083291A (en) * 1983-10-13 1985-05-11 Nec Corp Semiconductor memory
US4675846A (en) * 1984-12-17 1987-06-23 International Business Machines Corporation Random access memory
WO1986007487A1 (en) * 1985-06-07 1986-12-18 Anamartic Limited Electrical data storage elements
US4943740A (en) * 1988-04-12 1990-07-24 Zdzislaw Gulczynski Ultra fast logic
US4922411A (en) * 1988-12-27 1990-05-01 Atmel Corporation Memory cell circuit with supplemental current
US5117391A (en) * 1990-06-04 1992-05-26 Motorola, Inc. Bipolar memory cell array biasing technique with forward active PNP load cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1949406A1 (en) * 1969-09-30 1971-04-22 Siemens Ag Circuit arrangement with at least one bistable memory
JPS51120141A (en) * 1975-04-15 1976-10-21 Toshiba Corp Memory circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 001, no. 136 (E - 062) 10 November 1977 (1977-11-10) *

Also Published As

Publication number Publication date
JPH0660644A (en) 1994-03-04
EP0582294A2 (en) 1994-02-09
US5477483A (en) 1995-12-19
KR940004647A (en) 1994-03-15
US5537348A (en) 1996-07-16

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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AK Designated contracting states

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Effective date: 19940316

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SHARP KABUSHIKI KAISHA

Owner name: YOZAN INC.

17Q First examination report despatched

Effective date: 19961021

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19990302