EP0507246A2 - Optical sending and receiving device - Google Patents
Optical sending and receiving device Download PDFInfo
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- EP0507246A2 EP0507246A2 EP92105498A EP92105498A EP0507246A2 EP 0507246 A2 EP0507246 A2 EP 0507246A2 EP 92105498 A EP92105498 A EP 92105498A EP 92105498 A EP92105498 A EP 92105498A EP 0507246 A2 EP0507246 A2 EP 0507246A2
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- waveguide
- optical
- receiving device
- width
- transition
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
- G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
Definitions
- the invention relates to an optical transmitting and receiving device with a laser, a monitor diode, a wavelength-selective directional coupler, a receiving diode and with optical fibers required for light guidance.
- an optical transmitter and receiver unit with a transmitter element, a receiver element and an optical fiber directional coupler is known.
- the transmission path is interconnected with the receiving and the transmitting element via the directional coupler in such a way that the receiving element is decoupled from the transmitted signal.
- the use of the optical waveguide directional coupler enables duplex operation of an optical transmission link with a single optical fiber, via which transmit signals propagate in one direction and receive signals in the opposite direction.
- an optoelectronic transmission and reception device is also known.
- the optical receiver In the transmitting and receiving device with the optical transmitter, the optical receiver, a wavelength-selective beam splitter, a coupling optics with connecting fiber and a control device, which comprises a control circuit for the transmitter and a preamplification circuit for the receiver as many individual components as possible are combined or integrated in a semiconductor component.
- the optical transmitter is inserted into a silicon wafer as a laser chip consisting of III / V compound semiconductor material
- the optical receiver is inserted into the silicon wafer as a receiving diode chip consisting of III / V compound semiconductor material or monolithically integrated into the silicon wafer as a metal semiconductor diode.
- the wave-selective beam splitters, the control device, the optical fibers required for light guidance and the coupling optics are monolithically integrated into the silicon wafer.
- the III / V compound semiconductor material is suggested to be InP / InGaAsP.
- the use of a monitor diode for measuring and converting the light guide is proposed.
- the optoelectric transmission and reception device consists of III / V semiconductor base material, preferably InP / InGaAsP.
- III / V semiconductor base material preferably InP / InGaAsP.
- electro-optical and Optoelectric converters as well as optical fibers, but also other electronic components can be produced monolithically.
- the directional coupler thus serves for the lateral separation of the receiving and transmitting optoelectric components.
- a selective directional coupler that meets the requirements of the invention is known from DE 31 08 742 C2.
- This directional coupler consists of two optical fibers to be coupled with one another, between which a further optical fiber is arranged, such that the coupling wave of the central optical fiber is phase-synchronous with the waves in the other two optical fibers at the desired coupling frequency and that the two waveguides to be coupled are only connected to the Intermediate waveguides are coupled.
- a waveguide transition is provided for field matching between the integrated optical fibers with very small dimensions and the much larger glass fiber.
- Such a waveguide transition is described for example in P 41 03 896.7.
- An optical waveguide transition is described below which enables low-loss coupling of an optical fiber to a planar waveguide of an integrated optical circuit, the planar waveguide having a considerably smaller transverse field width than the optical fiber.
- the waveguide transition is realized on a substrate (eg made of n+-Inp).
- a substrate eg made of n+-Inp.
- a trench is etched into the substrate, which extends in the intended direction of wave propagation. Whose cross section can change along the direction of wave propagation so that the most homogeneous field transition possible.
- This trench is then overgrown with an optically active material (eg n ⁇ -InP) having a slightly higher refractive index than the substrate, whereby a rib of a rib waveguide formed in the course of the further process is formed.
- an optically active material eg n ⁇ -InP
- the cross section of this rib waveguide is to be chosen so large at one end of the waveguide transition that its field width is matched to that of a waveguide to be coupled (for example optical fiber).
- a trench is etched into the fin, which belongs to a fin waveguide, the cross section of which is considerably smaller than the aforementioned fin waveguide.
- the rib with its normal cross-section belonging to the rib waveguide with a large field width begins at one end of the waveguide transition and widens after a certain distance in the direction of the opposite end.
- the rib has a constant width before it widens. However, before the widening, the width of the rib can first be narrowed in order to achieve the most homogeneous possible transition of the field from one waveguide to the other. The widening occurs only by increasing the rib width while keeping the rib depth constant.
- a change in a layer width can be implemented with the known epitaxy methods with considerably less effort than a change in the layer thickness.
- the trench for the rib waveguide to be introduced in a next step begins with a cross section which is adapted to the required small field width.
- the trench gradually decreases in width (at constant depth) until it completely disappears.
- the rib e.g. made of InGaAsP
- a layer of the same material as the rib grow in the trench.
- the layer and the rib rising above it together form the rib waveguide with the small field width.
- FIG. 1 shows a top view in schematic form.
- the material system InGaAsP / InP offers the possibility of the monolithic integration of optical (laser, waveguide, etc.) and electronic (transistor, diode ...) components in what is interesting for optical communication Wavelength range from 1.3 to 1.55 ⁇ m.
- the figure shows the integration of a waveguide transition consisting of waveguides 8 and 6 for field matching between a glass fiber 10 and a system waveguide 6, a wavelength-selective directional coupler 3 for separating the wavelengths 1.3 ⁇ m and 1.55 ⁇ m, a laser 1 (1.3 ⁇ m ) with a monitor diode 2 (1.3 ⁇ m) and a receiving diode 4 (1.55 ⁇ m).
- the directional coupler consists of the two optical fibers 5 and 6 to be coupled and an intermediate waveguide.
- the directional coupler is used for the lateral separation between the optical waveguides 5 and 6 to be coupled and thus also for the separation between the optoelectronic components on the receiving and transmitting sides. A further separation of the optical fibers 5 and 6 by bending the optical fibers is not necessary.
- the system waveguide 6 of the optical transmission and reception device is of very small dimensions, in contrast to the core of the glass fiber 10, which is connected to the transmission and reception device. For this reason, a waveguide transition is provided. It consists of the system waveguide 6 and a further optical waveguide 8. The system waveguide 6 decreases more and more towards the core of the glass fiber 10 until it finally disappears. The other waveguide takes on ever larger dimensions in the direction of the directional coupler.
- the waveguide 8 also increases slightly in the direction of the core of the glass fiber 10. However, this takes place much more slowly than in the direction of the coupler 3.
- the glass fiber 10 is blunt on the waveguide 8 coupled.
- the core of the glass fiber 10 has a diameter d of approximately 10 ⁇ m and the waveguide 8 has a width c of approximately 9 ⁇ m.
- the glass fiber simultaneously carries light of different wavelengths, namely the light emanating from the optical transmitter and receiver with 1300 nm and the light arriving with the optical transmitter and receiver with 1550 nm.
- the extent of the optical transmitter and receiver is shown in the figure by Letters a and b marked. B is less than 2 mm in the present case, while a is approximately 100 ⁇ m. The solution presented is therefore extremely compact.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
Die Erfindung betrifft eine optische Sende- und Empfangsvorrichtung mit einem Laser, einer Monitordiode, einem wellenlängenselektiven Richtkoppler, einer Empfangsdiode und mit zur Lichtführung erforderlichen Lichtwellenleitern.The invention relates to an optical transmitting and receiving device with a laser, a monitor diode, a wavelength-selective directional coupler, a receiving diode and with optical fibers required for light guidance.
Aus der DE 33 26 406 A1 ist eine optische Sende- und Empfangseinheit mit einem Sendeelement, einem Empfangselement und einem Lichtwellenleiter-Richtkoppler bekannt. Die Übertragungsstrecke ist mit dem Empfangs- und dem Sendeelement so über den Richtkoppler zusammengeschaltet, daß das Empfangselement vom Sendesignal entkoppelt ist. Durch den Einsatz des Lichtwellenleiter-Richtkopplers ist ein Duplex-Betrieb einer optischen Übertragungsstrecke mit einer einzigen Lichtleitfaser möglich, über die sich Sendesignale in der einen und Empfangssignale in der entgegengesetzten Richtung ausbreiten.From DE 33 26 406 A1 an optical transmitter and receiver unit with a transmitter element, a receiver element and an optical fiber directional coupler is known. The transmission path is interconnected with the receiving and the transmitting element via the directional coupler in such a way that the receiving element is decoupled from the transmitted signal. The use of the optical waveguide directional coupler enables duplex operation of an optical transmission link with a single optical fiber, via which transmit signals propagate in one direction and receive signals in the opposite direction.
Aus der DE 38 33 311 A1 ist ebenfalls eine optoelektronische Sende- und Empfangsvorrichtung bekannt. In der Sende- und Empfangsvorrichtung mit dem optischen Sender, dem optischen Empfänger, einem wellenlängenselektiven Strahlteiler, einer Koppeloptik mit Anschlußfaser und einer Steuereinrichtung, die eine Ansteuerschaltung für den Sender und eine Vorverstärkungsschaltung für den Empfänger umfaßt, sollen möglichst viele Einzelbauteile in einem Halbleiterbauelement zusammengefaßt bzw. intergriert werden. Der optische Sender ist als ein aus III/V-Verbindungshalbleitermaterial bestehender Laserchip in eine Siliziumscheibe eingesetzt, der optische Empfänger ist als ein aus III/V-Verbindungshalbleitermaterial bestehender Empfangsdiodenchip in die Siliziumscheibe eingesetzt oder als Metallhalbleiterdiode in die Siliziumscheibe monolithisch integriert. In die Siliziumscheibe sind die wellenselektiven Strahlteiler, die Steuereinrichtung, zur Lichtführung erforderliche Lichtwellenleiter und Koppeloptik monolithisch integriert. Es wird vorgeschlagen, daß das III/V-Verbindungshalbleitermaterial InP/InGaAsP ist. Der Einsatz einer Monitordiode zum Messen und Wandeln der Lichtleitung wird vorgeschlagen.From DE 38 33 311 A1 an optoelectronic transmission and reception device is also known. In the transmitting and receiving device with the optical transmitter, the optical receiver, a wavelength-selective beam splitter, a coupling optics with connecting fiber and a control device, which comprises a control circuit for the transmitter and a preamplification circuit for the receiver as many individual components as possible are combined or integrated in a semiconductor component. The optical transmitter is inserted into a silicon wafer as a laser chip consisting of III / V compound semiconductor material, the optical receiver is inserted into the silicon wafer as a receiving diode chip consisting of III / V compound semiconductor material or monolithically integrated into the silicon wafer as a metal semiconductor diode. The wave-selective beam splitters, the control device, the optical fibers required for light guidance and the coupling optics are monolithically integrated into the silicon wafer. The III / V compound semiconductor material is suggested to be InP / InGaAsP. The use of a monitor diode for measuring and converting the light guide is proposed.
Ausgehend von diesem Stand der Technik ist es Aufgabe der Erfindung, eine möglichst einfach aufgebaute und kompakte optische Sende- und Empfangsvorrichtung anzugeben.Based on this prior art, it is an object of the invention to provide a compact and simple optical transmission and reception device.
Die Aufgabe wird durch die Merkmale des Patentanspruches 1 gelöst. Vorteilhafte Weiterbildungen sind in den Unteransprüchen angegeben.The object is achieved by the features of claim 1. Advantageous further developments are specified in the subclaims.
Während in der aus der DE 38 33 311 A1 bekannten optoelektronischen Sende- und Empfangsvorrichtung mindestens ein Baustein, nämlich der elektrooptische Wandler und gegebenenfalls auch die optoelektrischen Wandler nicht integriert, sondern als Chip eingesetzt sind, sind erfindungsgemäß sämtliche Komponenten auf einem Substrat monolithisch integriert. Die optoelektrische Sende- und Empfangsvorrichtung besteht dabei aus III/V-Halbleitergrundmaterial, vorzugsweise aus InP/InGaAsP. In diesem Grundmaterial sind sowohl elektrooptische und optoelektrische Wandler, sowie Lichtwellenleiter, aber auch weitere elektronische Komponenten monolithisch herstellbar. Durch die Verwendung eines Richtkopplers mit Zwischenwellenleiter ist es möglich, an die zu koppelnden Wellenleiter direkt, ohne diese zu krümmen und auseinanderzuführen, die elektrooptischen bzw. optoelektrischen Wandler anzubringen. Der Richtkoppler dient also zur lateralen Trennung der empfangs- und sendeseitigen optoelektrischen Bauelemente. Ein selektiver Richtkoppler, der die erfindungsgemäßen Anforderungen erfüllt, ist aus der DE 31 08 742 C2 bekannt. Dieser Richtkoppler besteht aus zwei miteinander zu verkoppelnden Lichtwellenleiter, zwischen denen ein weiterer Lichtwellenleiter angeordnet ist, derart, daß die Koppelwelle des mittleren Lichtwellenleiters bei der gewünschten Koppelfrequenz phasensynchron mit den Wellen in den beiden anderen Lichtwellenleitern ist und daß die beiden zu verkoppelnden Wellenleiter nur mit dem Zwischenwellenleiter verkoppelt sind.While in the optoelectronic transmitting and receiving device known from DE 38 33 311 A1, at least one component, namely the electro-optical converter and possibly also the optoelectric converter, are not integrated but are used as a chip, according to the invention all components are monolithically integrated on a substrate. The optoelectric transmission and reception device consists of III / V semiconductor base material, preferably InP / InGaAsP. In this basic material are both electro-optical and Optoelectric converters, as well as optical fibers, but also other electronic components can be produced monolithically. By using a directional coupler with an intermediate waveguide, it is possible to attach the electro-optical or opto-electrical transducers directly to the waveguides to be coupled, without bending and diverging them. The directional coupler thus serves for the lateral separation of the receiving and transmitting optoelectric components. A selective directional coupler that meets the requirements of the invention is known from DE 31 08 742 C2. This directional coupler consists of two optical fibers to be coupled with one another, between which a further optical fiber is arranged, such that the coupling wave of the central optical fiber is phase-synchronous with the waves in the other two optical fibers at the desired coupling frequency and that the two waveguides to be coupled are only connected to the Intermediate waveguides are coupled.
Zur Feldanpassung zwischen den integrierten Lichtwellenleitern mit sehr geringen Abmessungen und der wesentlich größeren Glasfaser ist ein Wellenleiterübergang vorgesehen. Ein solcher Wellenleiterübergang wird beispielsweise in der P 41 03 896.7 beschrieben. Nachfolgend wird ein optischer Wellenleiterübergang beschrieben, der eine verlustarme Ankopplung einer Lichtleitfaser an einen planaren Wellenleiter einer integrierten optischen Schaltung ermöglicht, wobei der planare Wellenleiter eine erheblich kleinere transversale Feldweite aufweist als die Lichtleitfaser. Der Wellenleiterübergang ist auf einem Substrat (z.B. aus n⁺-Inp) realisiert. In einem ersten Prozeßschritt wird, wie ein Querschnitt durch das Substrat zeigt, ein Graben in das Substrat geätzt, der sich in die vorgesehene Wellenausbreitungsrichtung erstreckt. Dessen Querschnitt kann sich entlang der Wellenausbreitungsrichtung so ändern, daß ein möglichst homogener Feldübergang erzielt wird. Darauf wird dieser Graben mit einem optisch wirksamen Material (z.B. n⁻-InP) geringfügig höherer Brechzahl als das Substrat besitzt zugewachsen, wodurch eine Rippe eines im Laufe des weiteren Verfahrens entstehenden Rippenwellenleiters gebildet wird. Der Querschnitt dieses Rippenwellenleiters ist an einem Ende des Wellenleiterübergangs so groß zu wählen, daß seine Feldweite an die eines anzukoppelnden Wellenleiters (z.B. Lichtleitfaser) angepaßt ist.A waveguide transition is provided for field matching between the integrated optical fibers with very small dimensions and the much larger glass fiber. Such a waveguide transition is described for example in P 41 03 896.7. An optical waveguide transition is described below which enables low-loss coupling of an optical fiber to a planar waveguide of an integrated optical circuit, the planar waveguide having a considerably smaller transverse field width than the optical fiber. The waveguide transition is realized on a substrate (eg made of n⁺-Inp). In a first process step, as a cross section through the substrate shows, a trench is etched into the substrate, which extends in the intended direction of wave propagation. Whose cross section can change along the direction of wave propagation so that the most homogeneous field transition possible. This trench is then overgrown with an optically active material (eg n⁻-InP) having a slightly higher refractive index than the substrate, whereby a rib of a rib waveguide formed in the course of the further process is formed. The cross section of this rib waveguide is to be chosen so large at one end of the waveguide transition that its field width is matched to that of a waveguide to be coupled (for example optical fiber).
Im nächsten Prozeßschritt wird in die Rippe ein Graben eingeätzt, der zu einem Rippenwellenleiter gehört, dessen Querschnitt erheblich kleiner ist als der zuvor erwähnte Rippenwellenleiter. Die zum Rippenwellenleiter mit großer Feldweite gehörende Rippe mit ihrem Normalquerschnitt (der an die anzukoppelnde Lichtleitfaser angepaßte Querschnitt) beginnt an einem Ende des Wellenleiterübergangs und weitet sich nach einer gewissen Strecke in Richtung auf das gegenüberliegende Ende hin auf. Die Rippe besitzt, bevor sie sich aufweitet, eine konstante Breite. Es kann aber auch vor der Aufweitung zunächst eine Breitenverjüngung der Rippe erfolgen, um einen möglichst homogenen Übergang des Feldes von einem Wellenleiter auf den anderen zu erreichen. Die Aufweitung geschieht nur durch Zunahme der Rippenbreite bei konstant gehaltener Rippentiefe. Eine Änderung einer Schichtbreite läßt sich mit den bekannten Epitaxieverfahren mit erheblich geringerem Aufwand realisieren als eine Änderung der Schichtdicke. An dem Ende, zu dem hin sich die Rippe aufweitet, beginnt der Graben für den in einem nächsten Schritt darin einzubringenden Rippenwellenleiter mit einem Querschnitt, der an die erforderliche kleine Feldweite angepaßt ist. In Richtung zum gegenüberliegenden Ende des Wellenleiterübergangs hin nimmt der Graben in seiner Breite (bei konstanter Tiefe) allmählich ab bis er ganz verschwindet.In the next process step, a trench is etched into the fin, which belongs to a fin waveguide, the cross section of which is considerably smaller than the aforementioned fin waveguide. The rib with its normal cross-section belonging to the rib waveguide with a large field width (the cross-section adapted to the optical fiber to be coupled) begins at one end of the waveguide transition and widens after a certain distance in the direction of the opposite end. The rib has a constant width before it widens. However, before the widening, the width of the rib can first be narrowed in order to achieve the most homogeneous possible transition of the field from one waveguide to the other. The widening occurs only by increasing the rib width while keeping the rib depth constant. A change in a layer width can be implemented with the known epitaxy methods with considerably less effort than a change in the layer thickness. At the end to which the rib widens, the trench for the rib waveguide to be introduced in a next step begins with a cross section which is adapted to the required small field width. Towards the opposite end of the Towards the waveguide transition, the trench gradually decreases in width (at constant depth) until it completely disappears.
In den Graben läßt man nun die Rippe (z.B. aus InGaAsP) und darüber noch eine Schicht aus dem gleichen Material wie die Rippe wachsen. Die Schicht und die sich darüber erhebende Rippe bilden zusammen den Rippenwellenleiter mit der kleinen Feldweite.Now let the rib (e.g. made of InGaAsP) and a layer of the same material as the rib grow in the trench. The layer and the rib rising above it together form the rib waveguide with the small field width.
Zur Herstellung der erfindungsgemäßen optischen Sende- und Empfangsvorrichtung ist kaum Justieraufwand notwendig. Ein erheblicher Kostenfaktor liegt in den Justagearbeiten. Bei der monolithischen Integration erfolgt diese Justage im Herstellungsprozeß. Außerdem kann eine Vielzahl gleicher Komponenten in einem Arbeitsgang hergestellt werden. Dadurch wird ein optoelektronischer Teilnehmeranschluß kostengünstig herstellbar. Zu dem ist ein integrierter Baustein gegenüber äußeren Einflüssen wie Temperaturänderungen und Erschütterungen weniger empfindlich als hybridintegrierte Lösungen. Weiterhin ist die geringe Größe der Vorrichtung von Vorteil. Die erfindungsgemäße Lösung ist extrem kompakt, da bei dem verwendeten Wellenlängenmultiplexer keine weiteren Wellenleiterkrümmungen benötigt werden. Die hohen Montagekosten entfallen, da eine Glasfaser einfach stumpf an die Vorrichtung angekoppelt werden kann.Almost no adjustment effort is required to manufacture the optical transmitting and receiving device according to the invention. A considerable cost factor lies in the adjustment work. With monolithic integration, this adjustment is made in the manufacturing process. In addition, a large number of identical components can be manufactured in one operation. This makes it possible to produce an optoelectronic subscriber connection at low cost. In addition, an integrated module is less sensitive to external influences such as temperature changes and vibrations than hybrid-integrated solutions. Furthermore, the small size of the device is advantageous. The solution according to the invention is extremely compact since no further waveguide curvatures are required in the wavelength multiplexer used. The high assembly costs are eliminated because a glass fiber can be simply butt-coupled to the device.
Ein Ausführungsbeispiel der Erfindung wird anhand der Zeichnung erläutert. Die Figur zeigt eine Aufsicht in schematischer Form.An embodiment of the invention is explained with reference to the drawing. The figure shows a top view in schematic form.
Das Materialsystem InGaAsP/InP bietet die Möglichkeit der monolithischen Integration optischer (Laser, Wellenleiter usw.) und elektronischer (Transistor, Diode...) Bauelemente im für die optische Nachrichtenübertragung interessanten Wellenlängenbereich von 1,3 bis 1,55 µm. Die Figur zeigt die Integration eines Wellenleiterübergangs bestehend aus Wellenleitern 8 und 6 zur Feldanpassung zwischen einer Glasfaser 10 und einem Systemwellenleiter 6, eines wellenlängenselektiven Richtkopplers 3 zur Trennung der Wellenlängen 1,3 µm und 1,55 µm, eines Lasers 1 (1,3 µm) mit einer Monitordiode 2 (1,3 µm) und einer Empfangsdiode 4 (1,55 µm). Es ist möglich als weitere Integrationsstufe Transistoren zur Laserregelung oder Teile der Empfangselektronik auf dem Substrat 9 vorzusehen. Die entsprechende Gegenseite zu dieser Sende- und Empfangsvorrichtung ergibt sich durch vertauschen der Arme des Richtkopplers, Laser und Monitordiode (1,55 µm) und Empfangsdiode (1,3 µm). Aus der Figur ist ersichtlich, daß der Richtkoppler aus den beiden zu verkoppelnden Lichtwellenleitern 5 und 6 und einem Zwischenwellenleiter besteht. Der Richtkoppler dient zur lateralen Trennung zwischen den zu verkoppelnden Lichtwellenleitern 5 und 6 und somit auch Trennung zwischen den empfangs- und sendeseitigen optoelektronischen Bauelementen. Eine weitere Auseinanderführung der Lichtwellenleiter 5 und 6 durch Krümmung der Lichtwellenleiter ist nicht notwendig. Der Systemwellenleiter 6 der optischen Sende- und Empfangsvorrichtung ist von sehr geringer Ausdehnung im Gegensatz zum Kern der Glasfaser 10, die an die Sende- und Empfangsvorrichtung angeschlossen wird. Aus diesem Grund ist ein Wellenleiterübergang vorgesehen. Er besteht aus dem Systemwellenleiter 6 und aus einem weiteren Lichtwellenleiter 8. Der Systemwellenleiter 6 nimmt in Richtung zum Kern der Glasfaser 10 hin immer stärker ab, bis er schließlich verschwindet. Der andere Wellenleiter nimmt in Richtung zum Richtkoppler immer größere Ausmaße an. Auch in Richtung zum Kern der Glasfaser 10 nimmt der Wellenleiter 8 geringfügig zu. Dies erfolgt jedoch wesentlich langsamer als in Richtung zum Koppler 3. Die Glasfaser 10 ist stumpf an den Wellenleiter 8 angekoppelt. Dabei weist der Kern der Glasfaser 10 einen Durchmesser d von ca. 10 µm und der Wellenleiter 8 eine Breite c von ca. 9 µm auf. Die Glasfaser führt gleichzeitig Licht verschiedener Wellenlängen, nämlich das von der optischen Sende- und Empfangsvorrichtung abgehende Licht mit 1300 nm und das zur optischen Sende- und Empfangsvorrichtung ankommende Licht mit 1550 nm. Die Ausdehnung der optischen Sende- und Empfangsvorrichtung ist in der Figur durch die Buchstaben a und b gekennzeichnet. B beträgt im vorliegenden Fall weniger als 2 mm, während a ungefähr 100 µm beträgt. Die vorgestellte Lösung ist also extrem kompakt.The material system InGaAsP / InP offers the possibility of the monolithic integration of optical (laser, waveguide, etc.) and electronic (transistor, diode ...) components in what is interesting for optical communication Wavelength range from 1.3 to 1.55 µm. The figure shows the integration of a waveguide transition consisting of
Claims (7)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19914111095 DE4111095C1 (en) | 1991-04-05 | 1991-04-05 | |
| DE4111095 | 1991-04-05 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0507246A2 true EP0507246A2 (en) | 1992-10-07 |
| EP0507246A3 EP0507246A3 (en) | 1993-04-21 |
| EP0507246B1 EP0507246B1 (en) | 1996-06-05 |
Family
ID=6428907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19920105498 Expired - Lifetime EP0507246B1 (en) | 1991-04-05 | 1992-03-31 | Optical sending and receiving device |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0507246B1 (en) |
| DE (2) | DE4111095C1 (en) |
| DK (1) | DK0507246T3 (en) |
| ES (1) | ES2089272T3 (en) |
| GR (1) | GR3020690T3 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2352558A (en) * | 1999-06-23 | 2001-01-31 | Bookham Technology Ltd | An optical transmitter |
| WO2003001626A2 (en) * | 2001-06-22 | 2003-01-03 | Massachusetts Institute Technology | Monolithic integration of micro-optics circuits and rf circuits |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4234485C1 (en) * | 1992-10-13 | 1993-09-30 | Ant Nachrichtentech | Device with two optical inputs and four optical outputs and polarization diversity receiver for optical heterodyne reception |
| DE4234486C1 (en) * | 1992-10-13 | 1993-09-30 | Ant Nachrichtentech | Arrangement for splitting an optical input signal into two signals with mutually orthogonal polarization |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0238082A2 (en) * | 1986-03-19 | 1987-09-23 | Siemens Aktiengesellschaft | Integrated optical semiconductor device |
| EP0256388A2 (en) * | 1986-08-20 | 1988-02-24 | Hitachi, Ltd. | Optical multi/demultiplexer |
| EP0284910A1 (en) * | 1987-03-30 | 1988-10-05 | Siemens Aktiengesellschaft | Integrated-optical device for bi-directional optical communications- or signal- transmission |
| EP0331338A2 (en) * | 1988-03-03 | 1989-09-06 | AT&T Corp. | Subassemblies for optoelectronic hybrid integrated circuits |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3108742C2 (en) * | 1981-03-07 | 1985-11-14 | ANT Nachrichtentechnik GmbH, 7150 Backnang | Selective directional coupler |
| DE3326406A1 (en) * | 1983-07-22 | 1985-02-07 | ANT Nachrichtentechnik GmbH, 7150 Backnang | Optical transmitting and receiving unit |
| DE3605248A1 (en) * | 1986-02-19 | 1987-09-03 | Standard Elektrik Lorenz Ag | OPTICAL TRANSMITTER / RECEIVER MODULE |
| DE3833311A1 (en) * | 1988-09-30 | 1990-04-19 | Siemens Ag | OPTOELECTRONIC TRANSMITTER AND RECEIVER |
| DE3916962A1 (en) * | 1989-05-24 | 1990-11-29 | Siemens Ag | Monolithically integrated laser diode-waveguide combination - forming branched planar closed curve |
-
1991
- 1991-04-05 DE DE19914111095 patent/DE4111095C1/de not_active Expired - Lifetime
-
1992
- 1992-03-31 ES ES92105498T patent/ES2089272T3/en not_active Expired - Lifetime
- 1992-03-31 DE DE59206453T patent/DE59206453D1/en not_active Expired - Fee Related
- 1992-03-31 EP EP19920105498 patent/EP0507246B1/en not_active Expired - Lifetime
- 1992-03-31 DK DK92105498T patent/DK0507246T3/en active
-
1996
- 1996-07-31 GR GR960402051T patent/GR3020690T3/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0238082A2 (en) * | 1986-03-19 | 1987-09-23 | Siemens Aktiengesellschaft | Integrated optical semiconductor device |
| EP0256388A2 (en) * | 1986-08-20 | 1988-02-24 | Hitachi, Ltd. | Optical multi/demultiplexer |
| EP0284910A1 (en) * | 1987-03-30 | 1988-10-05 | Siemens Aktiengesellschaft | Integrated-optical device for bi-directional optical communications- or signal- transmission |
| EP0331338A2 (en) * | 1988-03-03 | 1989-09-06 | AT&T Corp. | Subassemblies for optoelectronic hybrid integrated circuits |
Non-Patent Citations (2)
| Title |
|---|
| ELECTRONICS LETTERS vol. 24, no. 5, 3 March 1988, ENAGE GB pages 284 - 285 R.A. PATTIE, M.W. AUSTIN 'fabrication of tapered couplers in GaAs/GaAlAs waveguides' * |
| JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B vol. B9, no. 6, December 1991, NEW YORK US pages 3459 - 3463 , XP268564 R.ZENGERLE ET AL 'fabrication of optical beamwidth transformers for guided waves on InP using wedge-shaped taper structures' * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2352558A (en) * | 1999-06-23 | 2001-01-31 | Bookham Technology Ltd | An optical transmitter |
| GB2352558B (en) * | 1999-06-23 | 2001-11-07 | Bookham Technology Ltd | Optical transmitter with back facet monitor |
| WO2003001626A2 (en) * | 2001-06-22 | 2003-01-03 | Massachusetts Institute Technology | Monolithic integration of micro-optics circuits and rf circuits |
| WO2003001626A3 (en) * | 2001-06-22 | 2003-12-31 | Massachusetts Inst Technology | Monolithic integration of micro-optics circuits and rf circuits |
| US7031561B2 (en) | 2001-06-22 | 2006-04-18 | Massachusetts Institute Of Technology | Monolithic integration of micro-optics circuits and RF circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| GR3020690T3 (en) | 1996-10-31 |
| DE4111095C1 (en) | 1992-05-27 |
| DE59206453D1 (en) | 1996-07-11 |
| DK0507246T3 (en) | 1996-10-07 |
| ES2089272T3 (en) | 1996-10-01 |
| EP0507246A3 (en) | 1993-04-21 |
| EP0507246B1 (en) | 1996-06-05 |
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