EP0504712B1 - Process for producing single crystal silicon carbide layer - Google Patents
Process for producing single crystal silicon carbide layer Download PDFInfo
- Publication number
- EP0504712B1 EP0504712B1 EP92104092A EP92104092A EP0504712B1 EP 0504712 B1 EP0504712 B1 EP 0504712B1 EP 92104092 A EP92104092 A EP 92104092A EP 92104092 A EP92104092 A EP 92104092A EP 0504712 B1 EP0504712 B1 EP 0504712B1
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- Prior art keywords
- silicon carbide
- layer
- carbide layer
- substrate
- sic
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Definitions
- the invention relates to a method for producing a monocrystalline silicon carbide layer by epitaxial growth on only one side of a monocrystalline silicon layer.
- SiC monocrystalline silicon carbide
- the other process for the production of monocrystalline silicon carbide takes place by means of epitaxy, that is to say a thermal CVD process.
- a heated substrate is supplied with a silane and a hydrocarbon, such as propane, which forms SiC layers.
- SiC silicon carbide
- a monocrystalline silicon carbide layer is required as the substrate on which the growth can be carried out.
- Silicon carbide single crystals are not commercially available. If they are produced by the first-mentioned complex process, they are too small to be able to produce silicon carbide wafers with a sufficiently large diameter by epitaxial growth and, moreover, they have the defects mentioned.
- Si and SiC have very different coefficients of thermal expansion, namely that SiC contracts more than Si when it cools down.
- the SiC layers produced by heteroepitaxy are exposed to a tensile stress during cooling, which induces a high dislocation density in the SiC layer.
- the Si layer can crack, in particular if the Si wafer used as the substrate is too thin, or microcracks can occur in the SiC layer if, for example, an Si wafer that is too thick is used as the substrate.
- DE 36 13 012 A1 and DE 34 46 956 A1 disclose the production of a monocrystalline Si layer by growing alpha-SiC on a monocrystalline beta-SiC layer.
- the beta-SiC layer is produced by growing a thin SiC film on a monocrystalline Si layer by the CVD method, followed by removal of the Si layer by means of an acid
- a monocrystalline silicon carbide layer is produced by applying a thin amorphous silicon carbide separation layer to the silicon substrate, on which the monocrystalline silicon carbide layer is then deposited.
- a polycrystalline silicon carbide layer is first applied to a silicon substrate in the gas phase, then the silicon substrate is melted in order to apply a monocrystalline silicon carbide layer on the side of the polycrystalline silicon carbide layer by liquid-phase epitaxy, which layer Silicon substrate was facing. The molten silicon is then removed by etching.
- the object of the invention is to provide a monocrystalline SiC layer with a normal wafer diameter, which meets the highest requirements of semiconductor technology.
- the epitaxial growth of the SiC on the Si substrate can be carried out in the usual way. That is, the Si substrate is e.g. B. in an evacuated or e.g. chamber flushed with noble gases and / or hydrogen to a temperature of preferably 800 to 1400 ° C., whereupon a silane and a hydrocarbon such as propane or a gaseous silicon-carbon compound are fed to form a SiC layer .
- a silane and a hydrocarbon such as propane or a gaseous silicon-carbon compound
- the composite of the grown SiC layer and the Si substrate is not cooled by the temperature at which the epitaxy is carried out, that is to say preferably from 800 to 1400 ° C., but rather this composite becomes further heated, preferably to just below or up to the melting point of silicon of 1432 ° C, whereby the silicon layer is melted from the composite or evaporated by sublimation, so that the monocrystalline SiC layer remains. It is also possible, without cooling the composite, to etch off the silicon, e.g. B. with an etching gas or by plasma etching.
- the SiC only grows on one side of the Si substrate. This can be achieved in that the Si substrate lies on a plate during the epitaxial growth of the SiC, so that no SiC can be deposited on the side of the Si substrate facing the plate. It is also possible to have one side of the Flushing the Si substrate with an inert gas or subjecting it to vacuum in order to prevent SiC deposition on this side of the Si substrate.
- a slow SiC deposition rate is required so that an undisturbed monocrystalline SiC layer can form.
- a deposition rate of the SiC of less than 20 »m / h is preferred, preferably of 5 to 10» m / h, until an SiC layer thickness of 5 to 50 »m is reached is.
- the SiC deposition rate is then increased in the second phase. It is then even possible to carry out a plasma CVD process instead of the thermal CVD process, that is to say a chemical deposition from a vapor phase which is at least partially present as a plasma. As a result, the deposition rate can be increased to 100 »m / h or even 300» m / h in the second phase.
- monocrystalline silicon substrate 1 which is arranged on a substrate holder 2, is then heated in a chamber (not shown), one side of the substrate 1 being flushed with an inert gas, as illustrated by the arrows 3.
- a silicon carbide epitaxial layer 4 is then grown by epitaxy on the Si substrate 1, to be precise up to a layer thickness of, for example, 30 ⁇ m.
- a thicker SiC carrier layer 5 grows faster, for example by means of plasma support , the growth of the SiC layer being polycrystalline.
- the SiC wafer produced according to the invention it is in fact sufficient that a monocrystalline SiC structure of e.g. B. up to 50 »m.
- the second SiC layer only serves as a carrier, that is, for the mechanical reinforcement of the wafer. 4
- the Si substrate 1 is then z. B. removed by evaporation, so that a monocrystalline SiC semiconductor layer 4 remains on the polycrystalline SiC carrier layer 6 (Fig. 5).
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung einer monokristallinen Siliciumcarbid-Schicht durch Epitaxie-Aufwachsen auf nur einer Seite einer monokristallinen Silicium-Schicht.The invention relates to a method for producing a monocrystalline silicon carbide layer by epitaxial growth on only one side of a monocrystalline silicon layer.
Monokristallines Siliciumcarbid (SiC) stellt aufgrund seiner Hochtemperatureigenschaften einen an sich sehr wünschenswerten Verbindungshalbleiter dar.Due to its high temperature properties, monocrystalline silicon carbide (SiC) is a very desirable compound semiconductor.
Bisher sind im wesentlichen zwei Verfahren bekannt, um monokristalline SiC-Wafer herzustellen (vgl. Springer Proceedings in Physics, Vol. 43, "Amorphous and Crystalline Silicon Carbide and Related Materials II", Springer-Verlag Berlin, Heidelberg 1989). Bei dem einen Verfahren wird ein SiC-Kristall hergestellt, indem man SiC sublimiert und auf einen SiC-Impfkristall aufwachsen läßt. Das bekannte Verfahren ist extrem aufwendig. Auch läßt der Reinheitsgrad des erhaltenen monokristallinen SiC zu wünschen übrig. Dies ist darauf zurückzuführen, daß bei der erwähnten hohen Temperatur das SiC in der hexagonalen Form gebildet wird, die jedoch polytypisch ist. Die bei tieferen Temperaturen als Monotyp auftretende kubische und von den elektronischen Eigenschaften her vorzuziehende Form ist nach diesem Verfahren hingegen nicht erhältlich. Ferner ist dieses Verfahren auf die Herstellung kleiner Wafer von wenigen Zentimetern Durchmesser beschränkt.So far, essentially two methods are known for producing monocrystalline SiC wafers (cf. Springer Proceedings in Physics, Vol. 43, "Amorphous and Crystalline Silicon Carbide and Related Materials II", Springer-Verlag Berlin, Heidelberg 1989). In one method, an SiC crystal is produced by subliming SiC and growing it on an SiC seed crystal. The known method is extremely complex. The degree of purity of the monocrystalline SiC obtained also leaves something to be desired. This is due to the fact that, at the high temperature mentioned, the SiC is formed in the hexagonal form, which, however, is polytypical is. By contrast, the cubic form, which appears as a monotype at lower temperatures and is preferable from the electronic properties, cannot be obtained by this process. Furthermore, this method is limited to the production of small wafers with a diameter of a few centimeters.
Das andere Verfahren zur Herstellung von monokristallinem Siliciumcarbid erfolgt mittels Epitaxie, also einem thermischen CVD-Verfahren. Dabei wird einem erhitzten Substrat ein Silan und ein Kohlenwasserstoff, wie Propan, zugeführt, wodurch sich SiC-Schichten ausbilden.The other process for the production of monocrystalline silicon carbide takes place by means of epitaxy, that is to say a thermal CVD process. A heated substrate is supplied with a silane and a hydrocarbon, such as propane, which forms SiC layers.
Das Problem des Epitaxie-Aufwachsens von SiC besteht jedoch darin, daß man als Substrat eine monokristalline Siliciumcarbid-Schicht braucht, auf der man das Aufwachsen durchführen kann. Im Handel sind Siliciumcarbid-Einkristalle nicht erhältlich. Werden sie nach dem zuerst genannten aufwendigen Verfahren hergestellt, sind sie zu klein, um Siliciumcarbid-Wafer mit genügend großem Durchmesser durch Epitaxie-Aufwachsen herstellen zu können, und im übrigen mit den genannten Fehler behaftet.The problem with the epitaxial growth of SiC, however, is that a monocrystalline silicon carbide layer is required as the substrate on which the growth can be carried out. Silicon carbide single crystals are not commercially available. If they are produced by the first-mentioned complex process, they are too small to be able to produce silicon carbide wafers with a sufficiently large diameter by epitaxial growth and, moreover, they have the defects mentioned.
Man ist deshalb auf eine monokristalline Silicium(Si)-Scheibe (Wafer) als Heterosubstrat ausgewichen, da monokristallines Si eine monokristallinem SiC ähnliche Kristallstruktur besitzt und als Wafer im Handel mit einem Durchmesser von bis zu 200 mm und mehr erhältlich ist.One therefore switched to a monocrystalline silicon (Si) wafer as a hetero-substrate, since monocrystalline Si has a monocrystalline SiC-like crystal structure and is commercially available as a wafer with a diameter of up to 200 mm and more.
Bei diesem (Hetero-)Epitaxie-Verfahren erhält man also einen Verbund aus dem Si-Substrat und der darauf aufgewachsenen SiC-Schicht. Si und SiC besitzen jedoch voneinander stark abweichende Wärmeausdehnungskoeffizienten, und zwar zieht sich SiC beim Abkühlen stärker zusammen als Si. Dies hat zur Folge, daß die durch Heteroepitaxie hergestellten SiC-Schichten beim Abkühlen einer Zugspannung ausgesetzt sind, die eine hohe Versetzungsdichte in der SiC-Schicht induziert. Ganz abgesehen davon kann die Si-Schicht reißen, insbesondere wenn der als Substrat verwendete Si-Wafer zu dünn ist, oder es können Mikrorisse in der SiC-Schicht auftreten, wenn beispielsweise ein zu dicker Si-Wafer als Substrat eingesetzt wird.In this (hetero) epitaxy process, a composite of the Si substrate and the SiC layer grown on it is obtained. However, Si and SiC have very different coefficients of thermal expansion, namely that SiC contracts more than Si when it cools down. As a result, the SiC layers produced by heteroepitaxy are exposed to a tensile stress during cooling, which induces a high dislocation density in the SiC layer. Quite apart from this, the Si layer can crack, in particular if the Si wafer used as the substrate is too thin, or microcracks can occur in the SiC layer if, for example, an Si wafer that is too thick is used as the substrate.
Aus der DE 36 13 012 A1 und DE 34 46 956 A1 ist die Herstellung einer monokristallinen Si-Schicht durch Aufwachsen von alpha-SiC auf eine monokristalline beta-SiC-Schicht bekannt. Die beta-SiC-Schicht wird hergestellt, indem ein dünner SiC-Film nach dem CVD-Verfahren auf eine monokristalline Si-Schicht aufwachsen gelassen wird, woran sich die Entfernung der Si-Schicht mittels einer Säure anschließtDE 36 13 012 A1 and DE 34 46 956 A1 disclose the production of a monocrystalline Si layer by growing alpha-SiC on a monocrystalline beta-SiC layer. The beta-SiC layer is produced by growing a thin SiC film on a monocrystalline Si layer by the CVD method, followed by removal of the Si layer by means of an acid
Nach DE-A-3 415 799 wird eine monokristalline Siliciumcarbid-Schicht hergestellt, indem auf das Siliciumsubstrat eine dünne amorphe Siliciumcarbid-Trennschicht aufgebracht wird, auf der dann die monokristalline Siliciumcarbid-Schicht abgeschieden wird. Nach JP-A-55-105000 wird auf ein Siliciumsubstrat in der Gasphase erst eine polykristalline Siliciumcarbid-Schicht aufgebracht, dann das Siliciumsubstrat geschmolzen, um durch Flüssigphasen-Epitaxie eine monokristalline Siliciumcarbid-Schicht auf der Seite der polykristallinen Siliciumcarbid-Schicht aufzubringen, die dem Siliciumsubstrat zugewandt war. Das geschmolzene Silicium wird anschließend durch Ätzen entfernt.According to DE-A-3 415 799, a monocrystalline silicon carbide layer is produced by applying a thin amorphous silicon carbide separation layer to the silicon substrate, on which the monocrystalline silicon carbide layer is then deposited. According to JP-A-55-105000, a polycrystalline silicon carbide layer is first applied to a silicon substrate in the gas phase, then the silicon substrate is melted in order to apply a monocrystalline silicon carbide layer on the side of the polycrystalline silicon carbide layer by liquid-phase epitaxy, which layer Silicon substrate was facing. The molten silicon is then removed by etching.
Aufgabe der Erfindung ist es, eine monokristalline SiC-Schicht mit einem normalen Wafer-Durchmesser bereitzustellen, welche höchsten Anforderungen der Halbleiter-Technik genügt.The object of the invention is to provide a monocrystalline SiC layer with a normal wafer diameter, which meets the highest requirements of semiconductor technology.
Dies wird erfindungsgemäß nach dem im Anspruch 1 gekennzeichneten Verfahren erreicht.This is achieved according to the invention by the method characterized in claim 1.
Bei dem erfindungsgemäßen Verfahren kann das Epitaxie-Aufwachsen des SiC auf dem Si-Substrat in üblicher Art und Weise erfolgen. D. h., das Si-Substrat wird z. B. in einer evakuierten oder z.B. mit Edelgasen und/oder Wasserstoff gespülten Kammer auf eine Temperatur von vorzugsweise 800 bis 1400°C erwärmt, worauf der Kammer ein Silan und ein Kohlenwasserstoff, wie Propan, oder eine gasförmige Silicium-Kohlenstoff-Verbindung zugeführt werden, um eine SiC-Schicht zu bilden.In the method according to the invention, the epitaxial growth of the SiC on the Si substrate can be carried out in the usual way. That is, the Si substrate is e.g. B. in an evacuated or e.g. chamber flushed with noble gases and / or hydrogen to a temperature of preferably 800 to 1400 ° C., whereupon a silane and a hydrocarbon such as propane or a gaseous silicon-carbon compound are fed to form a SiC layer .
Erfindungsgemäß wird jedoch im Gegensatz zum Stand der Technik der Verbund aus der aufgewachsenen SiC-Schicht und dem Si-Substrat von der Temperatur, bei der die Epitaxie durchgeführt wird, also von vorzugsweise 800 bis 1400°C, nicht abgekühlt, vielmehr wird dieser Verbund weiter aufgeheizt, und zwar vorzugsweise bis knapp unter oder bis über den Schmelzpunkt von Silicium von 1432°C, wodurch die Silicium-Schicht von dem Verbund abgeschmolzen bzw. durch Sublimation verdampft wird, so daß die monokristalline SiC-Schicht zurückbleibt. Ferner ist es möglich, ohne den Verbund abzukühlen, das Silicium abzuätzen, z. B. mit einem Ätzgas oder durch Plasma-Ätzen.According to the invention, however, in contrast to the prior art, the composite of the grown SiC layer and the Si substrate is not cooled by the temperature at which the epitaxy is carried out, that is to say preferably from 800 to 1400 ° C., but rather this composite becomes further heated, preferably to just below or up to the melting point of silicon of 1432 ° C, whereby the silicon layer is melted from the composite or evaporated by sublimation, so that the monocrystalline SiC layer remains. It is also possible, without cooling the composite, to etch off the silicon, e.g. B. with an etching gas or by plasma etching.
Damit die Si-Schicht von dem Verbund entfernt werden kann, ist es bei dem erfindungsgemäßen Verfahren erforderlich, daß das SiC nur auf einer Seite des Si-Substrats aufwächst. Dies kann dadurch erreicht werden, daß das Si-Substrat beim Epitaxie-Aufwachsen des SiC auf einer Platte liegt, so daß sich auf der der Platte zugewandten Seite des Si-Substrats kein SiC abscheiden kann. Auch ist es möglich, eine Seite des Si-Substrats mit einem Inertgas zu spülen oder Vakuum auszusetzen, um eine SiC-Abscheidung an dieser Seite des Si-Substrats zu verhindern.So that the Si layer can be removed from the composite, it is necessary in the method according to the invention that the SiC only grows on one side of the Si substrate. This can be achieved in that the Si substrate lies on a plate during the epitaxial growth of the SiC, so that no SiC can be deposited on the side of the Si substrate facing the plate. It is also possible to have one side of the Flushing the Si substrate with an inert gas or subjecting it to vacuum in order to prevent SiC deposition on this side of the Si substrate.
In der ersten Phase des Epitaxie-Aufwachsens ist eine langsame SiC-Abscheidungsgeschwindigkeit erforderlich, damit sich eine störungsfreie monokristalline SiC-Schicht ausbilden kann. Demgemäß wird in der ersten Phase des Epitaxie-Aufwachsens nach dem erfindungsgemäßen Verfahren eine Abscheidungsgeschwindigkeit des SiC von weniger als 20 »m/h bevorzugt, vorzugsweise von 5 bis 10 »m/h, bis eine SiC-Schichtdicke von 5 bis 50 »m erreicht ist. In der zweiten Phase wird dann die SiC-Abscheidungsgeschwindigkeit erhöht. Es ist dann sogar möglich, statt dem thermischen CVD-Verfahren ein Plasma-CVD-Verfahren durchzuführen, also eine chemische Abscheidung aus einer Dampfphase, die zumindest teilweise als Plasma vorliegt. Dadurch kann in der zweiten Phase die Abscheidungsgeschwindigkeit auf 100 »m/h oder gar 300 »m/h erhöht werden.In the first phase of epitaxial growth, a slow SiC deposition rate is required so that an undisturbed monocrystalline SiC layer can form. Accordingly, in the first phase of epitaxial growth using the method according to the invention, a deposition rate of the SiC of less than 20 »m / h is preferred, preferably of 5 to 10» m / h, until an SiC layer thickness of 5 to 50 »m is reached is. The SiC deposition rate is then increased in the second phase. It is then even possible to carry out a plasma CVD process instead of the thermal CVD process, that is to say a chemical deposition from a vapor phase which is at least partially present as a plasma. As a result, the deposition rate can be increased to 100 »m / h or even 300» m / h in the second phase.
In der Zeichnung ist das erfindungsgemäße Verfahren anhand eines Fließschemas näher erläutert.In the drawing, the method according to the invention is explained in more detail using a flow diagram.
Danach wird gemäß Fig. 1 monokristallines Silicium-Substrat 1, das auf einem Substrathalter 2 angeordnet ist, in einer nicht dargestellten Kammer erhitzt, wobei die eine Seite des Substrats 1 mit einem Inertgas gespült wird, wie durch die Pfeile 3 verdeutlicht.1, monocrystalline silicon substrate 1, which is arranged on a
Gemäß Fig. 2 läßt man dann durch Epitaxie auf das Si-Substrat 1 eine Siliciumcarbid-Epitaxieschicht 4 aufwachsen, und zwar bis zu einer Schichtdicke von beispielsweise 30 »m. Wenn die dünne SiC-Epitaxieschicht 4 gebildet worden ist, erfolgt gemäß Fig. 3 ein schnelleres Aufwachsen einer dickeren SiC-Trägerschicht 5, beispielsweise durch Plasmaunterstützung, wobei das Wachstum der SiC-Schicht polykristallin ist. Für die Verwendung des erfindungsgemäß hergestellten SiC-Wafers als Halbleitermaterial ist es nämlich ausreichend, daß auf einer Seite eine monokristalline SiC-Struktur von z. B. bis zu 50 »m vorliegt. Demgegenüber dient die zweite SiC-Schicht nur als Träger, also zur mechanischen Verstärkung des Wafers. Gemäß Fig. 4 wird anschließend das Si-Substrat 1 z. B. durch Verdampfen entfernt, so daß eine monokristalline SiC-Halbleiterschicht 4 auf der polykristallinen SiC-Trägerschicht 6 zurückbleibt (Fig. 5).According to FIG. 2, a silicon carbide epitaxial layer 4 is then grown by epitaxy on the Si substrate 1, to be precise up to a layer thickness of, for example, 30 μm. According to FIG. 3, when the thin SiC epitaxial layer 4 has been formed, a thicker
Claims (7)
- A method for producing a compound of a monocrystalline silicon carbide layer and a polycrystalline silicon carbide layer by growing a first silicon carbide layer on one side of a monocrystalline silicon substrate in a gaseous phase, growing a second silicon carbide layer and removing the silicion substrate without previous cooling, characterized in that the monocrystalline silicon carbide layer is grown as first layer by gaseous epitaxial growth, and as second layer the polycrystalline silicon carbide layer is grown from the gaseous phase on the side of the monocrystalline silicon carbide layer opposite the silicon substrate by increasing the deposition rate, to form a compound of the solid silicon substrate, the monocrystalline silicon carbide layer and the polycrystalline silicon carbide layer, from which the silicon substrate is removed.
- The method of claim 1, characterized in that the silicon substrate is removed by melting off, vaporization or etching.
- The method of claim 1 or 2, characterized in that the opposite side of the silicon substrate is placed on a plate or subjected to an inert gas or vacuum in order for the growth of the silicon carbide to take place on only one side of the silicon substrate.
- The method of claim 3, characterized in that noble gas and/or hydrogen is used as an inert gas.
- The method of one of the above claims, characterized in that the epitaxial growth of the silicon carbide on the silicon substrate in the gaseous phase is performed in a first phase with a deposition rate of less than 20 »m/h until a silicon carbide layer thickness of 5 to 50 »m is reached, whereupon the deposition rate is increased in a second phase to form the polycrystalline silicon carbide layer.
- The method of claim 5, characterized in that the deposition rate of the monocrystalline silicon carbide in the first phase is 5 to 10 »m/h.
- The method of claim 5 or 6, characterized in that the growth of the polycrystalline silicon carbide in the second phase takes place by plasma CVD.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4109005 | 1991-03-19 | ||
| DE4109005A DE4109005C1 (en) | 1991-03-19 | 1991-03-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0504712A1 EP0504712A1 (en) | 1992-09-23 |
| EP0504712B1 true EP0504712B1 (en) | 1995-07-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP92104092A Expired - Lifetime EP0504712B1 (en) | 1991-03-19 | 1992-03-10 | Process for producing single crystal silicon carbide layer |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0504712B1 (en) |
| JP (1) | JPH0624900A (en) |
| DE (2) | DE4109005C1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4234508C2 (en) * | 1992-10-13 | 1994-12-22 | Cs Halbleiter Solartech | Method for producing a wafer with a monocrystalline silicon carbide layer |
| JPH08130439A (en) * | 1994-11-01 | 1996-05-21 | Agency Of Ind Science & Technol | High-speed surface acoustic wave element |
| US6110279A (en) * | 1996-03-29 | 2000-08-29 | Denso Corporation | Method of producing single-crystal silicon carbide |
| JP5761264B2 (en) * | 2013-07-24 | 2015-08-12 | トヨタ自動車株式会社 | Method for manufacturing SiC substrate |
| JP6488607B2 (en) * | 2014-09-22 | 2019-03-27 | 株式会社Sumco | Manufacturing method of single crystal SiC wafer |
| JP6582779B2 (en) * | 2015-09-15 | 2019-10-02 | 信越化学工業株式会社 | Manufacturing method of SiC composite substrate |
| SE544565C2 (en) * | 2021-03-11 | 2022-07-19 | Kiselkarbid I Stockholm Ab | System and method of producing monocrystalline layers on a substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59203799A (en) * | 1983-04-28 | 1984-11-17 | Sharp Corp | Preparation of substrate made of silicon carbide single crystal |
| JPS60145992A (en) * | 1983-12-29 | 1985-08-01 | Sharp Corp | Preparation of silicon carbide single crystal base |
| JPS61243000A (en) * | 1985-04-18 | 1986-10-29 | Sharp Corp | Production of substrate of silicon carbide single crystal |
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1991
- 1991-03-19 DE DE4109005A patent/DE4109005C1/de not_active Expired - Fee Related
-
1992
- 1992-03-02 JP JP4081651A patent/JPH0624900A/en active Pending
- 1992-03-10 EP EP92104092A patent/EP0504712B1/en not_active Expired - Lifetime
- 1992-03-10 DE DE59203001T patent/DE59203001D1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE59203001D1 (en) | 1995-08-31 |
| JPH0624900A (en) | 1994-02-01 |
| DE4109005C1 (en) | 1992-09-10 |
| EP0504712A1 (en) | 1992-09-23 |
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