EP0462599A3 - Apparatus and method for etch rate monitoring - Google Patents

Apparatus and method for etch rate monitoring Download PDF

Info

Publication number
EP0462599A3
EP0462599A3 EP19910110089 EP91110089A EP0462599A3 EP 0462599 A3 EP0462599 A3 EP 0462599A3 EP 19910110089 EP19910110089 EP 19910110089 EP 91110089 A EP91110089 A EP 91110089A EP 0462599 A3 EP0462599 A3 EP 0462599A3
Authority
EP
European Patent Office
Prior art keywords
etch rate
rate monitoring
monitoring
etch
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19910110089
Other versions
EP0462599A2 (en
EP0462599B1 (en
Inventor
Bruno Strul
Richard De Geus
Peter Ebbing
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP0462599A2 publication Critical patent/EP0462599A2/en
Publication of EP0462599A3 publication Critical patent/EP0462599A3/en
Application granted granted Critical
Publication of EP0462599B1 publication Critical patent/EP0462599B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/22—Measuring arrangements characterised by the use of optical techniques for measuring depth

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
EP91110089A 1990-06-19 1991-06-19 Apparatus and method for etch rate monitoring Expired - Lifetime EP0462599B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54066090A 1990-06-19 1990-06-19
US540660 1990-06-19

Publications (3)

Publication Number Publication Date
EP0462599A2 EP0462599A2 (en) 1991-12-27
EP0462599A3 true EP0462599A3 (en) 1992-08-12
EP0462599B1 EP0462599B1 (en) 1996-02-14

Family

ID=24156415

Family Applications (1)

Application Number Title Priority Date Filing Date
EP91110089A Expired - Lifetime EP0462599B1 (en) 1990-06-19 1991-06-19 Apparatus and method for etch rate monitoring

Country Status (4)

Country Link
EP (1) EP0462599B1 (en)
JP (1) JP3065380B2 (en)
KR (1) KR100226002B1 (en)
DE (1) DE69117103T2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6818559B2 (en) 2001-03-21 2004-11-16 Intel Corporation Method of fabrication to sharpen corners of Y-branches in integrated optical components and other micro-devices
US20050042777A1 (en) * 2003-08-20 2005-02-24 The Boc Group Inc. Control of etch and deposition processes
JP5920255B2 (en) * 2013-03-18 2016-05-18 株式会社デンソー Semiconductor device manufacturing method and dry etching apparatus used therefor
ES2540921B2 (en) * 2015-03-06 2016-02-08 Universidad Complutense De Madrid Opto-electronic device and methods to collimate and determine the degree of collimation of a light beam
WO2024091628A1 (en) * 2022-10-28 2024-05-02 Applied Materials, Inc. Methods of geometry parameters measurement for optical gratings

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873430A (en) * 1988-10-25 1989-10-10 International Business Machines Corporation Method and apparatus for optically measuring characteristics of a thin film by directing a P-polarized beam through an integrating sphere at the brewster's angle of the film
EP0352740A2 (en) * 1988-07-28 1990-01-31 Applied Materials, Inc. Laser interferometer system for monitoring and controlling IC processing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173837A (en) * 1984-09-26 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Controlling method of positioning of gap by combination diffraction grating
JPH0682636B2 (en) * 1985-04-19 1994-10-19 株式会社日立製作所 Dry etching method
JPH088242B2 (en) * 1989-10-31 1996-01-29 株式会社東芝 Etching depth measuring device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0352740A2 (en) * 1988-07-28 1990-01-31 Applied Materials, Inc. Laser interferometer system for monitoring and controlling IC processing
US4873430A (en) * 1988-10-25 1989-10-10 International Business Machines Corporation Method and apparatus for optically measuring characteristics of a thin film by directing a P-polarized beam through an integrating sphere at the brewster's angle of the film

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 10, no. 008 (E-373)14 January 1986 & JP-A-60 173 837 ( NIPON DENSHIN DENWA KOSHA ) 7 September 1985 *
PATENT ABSTRACTS OF JAPAN vol. 11, no. 088 (E-490)18 March 1987 & JP-A-61 241 923 ( HITACHI LTD ) 28 October 1986 *

Also Published As

Publication number Publication date
JP3065380B2 (en) 2000-07-17
KR920001667A (en) 1992-01-30
DE69117103D1 (en) 1996-03-28
DE69117103T2 (en) 1996-06-27
EP0462599A2 (en) 1991-12-27
JPH04297028A (en) 1992-10-21
KR100226002B1 (en) 1999-10-15
EP0462599B1 (en) 1996-02-14

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