EP0427801A1 - Semiconductor switch, especially a high-tension ignition switch for an internal combustion engine. - Google Patents
Semiconductor switch, especially a high-tension ignition switch for an internal combustion engine.Info
- Publication number
- EP0427801A1 EP0427801A1 EP19900903317 EP90903317A EP0427801A1 EP 0427801 A1 EP0427801 A1 EP 0427801A1 EP 19900903317 EP19900903317 EP 19900903317 EP 90903317 A EP90903317 A EP 90903317A EP 0427801 A1 EP0427801 A1 EP 0427801A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- voltage
- semiconductor
- current
- ver
- semiconductor components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P7/00—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices
- F02P7/02—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors
- F02P7/03—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors with electrical means
- F02P7/035—Arrangements of distributors, circuit-makers or -breakers, e.g. of distributor and circuit-breaker combinations or pick-up devices of distributors with electrical means without mechanical switching means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P3/00—Other installations
- F02P3/06—Other installations having capacitive energy storage
- F02P3/08—Layout of circuits
- F02P3/0807—Closing the discharge circuit of the storage capacitor with electronic switching means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P9/00—Electric spark ignition control, not otherwise provided for
- F02P9/002—Control of spark intensity, intensifying, lengthening, suppression
Definitions
- Semiconductor switch in particular as a high-voltage ignition switch for internal combustion engines
- the invention relates to a semiconductor switch, in particular as an ignition voltage switch for applying an ignition voltage to a spark plug of an internal combustion engine, with a cascade circuit formed by semiconductor components for switching an operating voltage to a consumer, according to the preamble of the main claim.
- connection elements In the case of semiconductor high-voltage switches, it is known to carry out a cascade connection (series connection) of semiconductor components, so that the dielectric strength is ensured.
- connection elements are implemented by relatively complex RC networks. An uneven voltage distribution that occurs as a result of specimen controls and due to the inevitable stray capacities is thus avoided.
- the circuit elements result in a relatively complex and expensive circuit structure.
- the device according to the invention with the features mentioned in the main claim has the advantage that no circuit elements have to be used and nevertheless a largely symmetrical voltage distribution is realized. This significantly reduces the circuitry and there are no additional voltage control losses.
- the cascaded semiconductor components connected in series each have a junction capacitance and the between Any connection made by two semiconductor components forms a corresponding (parasitic) earth capacitance due to the electrical field distribution present there. These capacitances known per se are unavoidable and therefore have nothing in common with the wiring elements known from the prior art. They are used for the symmetrical voltage distribution of the semiconductor switch according to the invention, since they cause a displacement current due to a voltage increase in the operating voltage.
- a breakdown current flowing through the semiconductor components before the conductive state is reached, relative to the displacement current is within the range i ver ⁇ i k ⁇ a ⁇ i ver , where i ver is the displacement current, i K is the breakover current and a is a factor , whose value is between 5 and 10.
- i ver is the displacement current
- i K is the breakover current
- a is a factor , whose value is between 5 and 10.
- Breakdown current is to be understood as the current of the semiconductor component which flows shortly before its conductive state is reached.
- the breakover voltage assigned to the breakover current which corresponds to the ignition voltage which leads to the semiconductor being switched on, is present at the semiconductor component which is still in the blocked state. Accordingly, if there is an increase in voltage up to the ignition voltage, the semiconductor assumes its conductive state. Here, the previously flowing, small breakdown current changes into the forward current (operating current).
- the limits of the tipping current result from the need that no semiconductor component of the cascade may switch through before the breakover voltage and thus the breakover current is reached on the output-side semiconductor component leading to the consumer.
- the voltage increases up to the ignition voltage of the semiconductor components at which switching takes place. This is called “overhead ignition” if the ignition process takes place without additional control, triggering or the like. If, for example, the semiconductor component is a thyristor, there is an overhead ignition if, without driving the gate, the anode-cathode voltage is increased to the zero breakover voltage at which the semiconductor changes into its conductive state . In the semiconductor switch according to the invention, however, components with control connections can also be used, so that switching can be carried out by driving these control connections.
- Each semiconductor component is preferably designed as a thyristor, photo thyristor or breakover diode.
- FIG. 1 shows a schematically illustrated cascade of the high-voltage switch provided with semiconductor components with a connected consumer
- Figure 2 is a diagram of the operating voltage
- FIG. 3 shows a current / voltage diagram of a semiconductor component.
- FIG. 1 shows a series connection of a plurality of thyristors T 1 to T n . These form a cascade 1 of the high-voltage switch 2 according to the invention. One end of the series circuit forms an input 3 and the other end forms an output 4 of the high-voltage switch 2.
- a junction capacitance C 1 lies parallel to each thyristor T 1 to T n .
- the size of the junction capacitance C 1 can be influenced within certain limits in semiconductor production. In practice it can be assumed that the junction capacitances C 1 of the thyristors T 1 to T n due to Variations in copies do not all have the same value.
- the connections between two calf conductor components T 1 to T n are connected to a parasitic earth capacitance C 2 determined by the electrical field distribution.
- C 2 a parasitic earth capacitance
- the size of the individual earth's capacities C 2 can vary depending on the location within the cascade; with a symmetrical structure of the cascade 1, however, it is possible that all earth capacitances C 2 have approximately the same value.
- junction capacitances C 1 and the earth capacitances C 2 are inevitable, parasitic capacitances, and therefore not additional circuit elements, as are known from the prior art. To illustrate this difference, a dashed representation has been chosen in FIG.
- the operating voltage u O is applied to the input 3 of the cascade 1 and a consumer 5 is connected to the output 4.
- the high-voltage switch 2 is preferably used as an ignition voltage switch for applying an ignition voltage to a spark plug of an internal combustion engine.
- the operating voltage u o is the secondary voltage of an ignition coil and the consumer 5 is a spark plug Z K.
- the respective gate 6 of the thyristors T 1 to T n is not wired in the illustrated embodiment. This means that the Thy Ristor T 1 to T n assume their conductive state when the anode-cathode voltage exceeds a certain limit value (zero breakover voltage) U K0 .
- the gates 6 are activated, the ignition voltage of the thyristors T 1 to T n is dependent on the control current flowing in each case. In the following, however, the activation-free embodiment shown in FIG. 1 will be discussed.
- FIG. 2 shows the voltage profile of the secondary voltage (operating voltage u o ) of an ignition coil (not shown).
- the negative half wave has an edge with the voltage rise speed du o / dt.
- FIG. 3 shows the current-voltage diagram of one of the thyristors T 1 to T n .
- the pass quadrant of the diagram is shown.
- U D With increasing anode-cathode voltage U D , the current initially hardly increases, but is limited to the blocking current I AK . If the breakover voltage u K is reached, the current suddenly rises to the breakover current i K and then jumps into the forward current I T. Since the gates 6 of the thyristor T 1 to T n are not activated (FIG. 1), the breakover voltage u K is the zero breakover voltage U K0 .
- the high-voltage switch 2 works as follows:
- the voltage curve indicated in FIG. 2 is applied to input 3 of cascade 1 by appropriate activation of the ignition coil (not shown). Accordingly, the negative half-wave runs into the circuit at a voltage change rate du o / dt, so that the thyristor T 1 appropriate junction capacitance C 1 charges and the current through the thyristor T 1 assumes the value of the breakover current i k .
- the breakover current i k then flows to the thyristor T 2 and charges the existing junction capacitance C 1 and earth capacitance C 2 there.
- the breakover current i k also occurs in the case of the thyristor T 2 .
- This process is repeated in the subsequent thyristors T3 to T n , the current coming from the thyristor T n stage (T n-1 ) of the cascade 1 receiving a charge of the capacitors in parallel on the output side stage (thyristor T n ).
- the total capacitance of the last stage is thus composed of the sum of the junction capacitance C 1 associated with the thyristor T n and the ground capacitance C 2 .
- This total capacity is the largest capacity compared to the other stages of cascade 1, since there is no series connection of capacities in the last stage.
- the voltage change rate du o / dt is applied to it, which leads to the formation of the displacement current i ver .
- the sum of the breakover voltage u k of the individual semiconductors of the cascade 1 is set exactly as the sum breakover voltage, so that sample variations are not negatively noticeable.
- the overall symmetrical voltage distribution without additional wiring elements leads to an almost simultaneous control of all tyristors T k to T n when the ignition voltage is reached.
- junction capacitance C 1 and earth capacitance C 2 are 1 pF.
- the voltage rise rate du o / dt is given as 1000 V / ⁇ s.
- breakover current i k is in the range between 1 and 5 mA
- an essentially symmetrical distribution of the cascade input voltage (operating voltage u o ) over the individual stages of the cascade 1 can be assumed.
- measures familiar to the semiconductor expert must be taken that the breakover current i k is in the range between 1 and 5 mA.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
- Electronic Switches (AREA)
- Thyristors (AREA)
Abstract
L'invention concerne un commutateur à semi-conducteurs, utilisé notamment comme contacteur haute tension pour l'application d'une tension d'allumage à une bougie d'allumage d'un moteur à combustion interne, comportant un montage en cascade formé par des éléments constitutifs semi-conducteurs disposés en série, pour le branchement d'une tension de service sur un utilisateur, les éléments semi-conducteurs présentant chacun une capacité à couche d'arrêt, et la jonction entre deux éléments semi-conducteurs formant une capacité parasitaire par rapport au sol, déterminée par la répartition électrique de champ. Pour une répartition symétrique de tension sans organes de couplage supplémentaires, il est prévu qu'un courant de décrochage (ik) parcourant les éléments semi-conducteurs (T1 à Tn) avant d'atteindre l'état conducteur, se situe, par rapport à un courant de déplacement (iver), dans l'intervalle défini ci-après: iver<ik<a.iver le courant de déplacement (iver) étant produit par un accroissement de tension (duo/dt) de la tension de service uo aux capacités à couche d'arrêt (C1) et de masse (C2) du montage en cascade, variant successivement avec le branchement desdits éléments semi-conducteurs, et le facteur (a) présentant une valeur comprise entre 5 et 10.The invention relates to a semiconductor switch, used in particular as a high voltage contactor for applying an ignition voltage to a spark plug of an internal combustion engine, comprising a cascade circuit formed by semiconductor constituent elements arranged in series, for connecting an operating voltage to a user, the semiconductor elements each having a barrier layer capacitance, and the junction between two semiconductor elements forming a parasitic capacitance relative to the ground, determined by the electrical field distribution. For a symmetrical voltage distribution without additional coupling members, it is expected that a stall current (ik) flowing through the semiconductor elements (T1 to Tn) before reaching the conductive state, is located, with respect to a displacement current (iver), in the interval defined below: iver <ik <a.iver the displacement current (iver) being produced by a voltage increase (duo / dt) of the operating voltage uo aux capacitances with stop (C1) and ground (C2) layer of the cascade assembly, varying successively with the connection of said semiconductor elements, and the factor (a) having a value between 5 and 10.
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3917968A DE3917968A1 (en) | 1989-06-02 | 1989-06-02 | SEMICONDUCTOR SWITCHES, IN PARTICULAR AS HIGH VOLTAGE IGNITION SWITCHES FOR INTERNAL COMBUSTION ENGINES |
DE3917968 | 1989-06-02 | ||
PCT/DE1990/000123 WO1990015242A1 (en) | 1989-06-02 | 1990-02-23 | Semiconductor switch, especially a high-tension ignition switch for an internal combustion engine |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0427801A1 true EP0427801A1 (en) | 1991-05-22 |
EP0427801B1 EP0427801B1 (en) | 1994-06-01 |
Family
ID=6381894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP90903317A Expired - Lifetime EP0427801B1 (en) | 1989-06-02 | 1990-02-23 | Semiconductor switch, especially a high-tension ignition switch for an internal combustion engine |
Country Status (5)
Country | Link |
---|---|
US (1) | US5255660A (en) |
EP (1) | EP0427801B1 (en) |
JP (1) | JP2783677B2 (en) |
DE (2) | DE3917968A1 (en) |
WO (1) | WO1990015242A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950704611A (en) * | 1993-09-29 | 1995-11-20 | 랄프 베렌스·위르겐 프리드만 | High voltage switch for ignition systems of internal combustion engines |
US5568035A (en) * | 1993-10-15 | 1996-10-22 | Sony/Tektronix Corporation | Variable-capacitance power supply apparatus |
US5656966A (en) * | 1994-03-09 | 1997-08-12 | Cooper Industries, Inc. | Turbine engine ignition exciter circuit including low voltage lockout control |
US5592118A (en) * | 1994-03-09 | 1997-01-07 | Cooper Industries, Inc. | Ignition exciter circuit with thyristors having high di/dt and high voltage blockage |
GB9722858D0 (en) * | 1997-10-29 | 1997-12-24 | Dibble Jonathan R | Ignition circuits |
GB0203582D0 (en) * | 2002-02-15 | 2002-04-03 | Smiths Group Plc | Ignition circuits |
DE102005025454A1 (en) * | 2005-06-02 | 2006-12-07 | Infineon Technologies Ag | Circuit arrangement use in e.g. thyristor controlled rectifier, has power thyristor with unwired control connection for supplying igniting signal, where control connection of power thyristor is not led out from housing of power thyristor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1247459A (en) * | 1959-10-22 | 1960-12-02 | Renault | Improvements to spark generators |
US4554622A (en) * | 1983-09-22 | 1985-11-19 | Graco Inc | Compact voltage multiplier for spray guns |
DE3731412A1 (en) * | 1986-11-08 | 1988-05-11 | Bosch Gmbh Robert | High-voltage switch |
US5002034A (en) * | 1987-09-18 | 1991-03-26 | Robert Bosch Gmbh | High-voltage switch |
JPH01186168A (en) * | 1988-01-20 | 1989-07-25 | Oki Electric Ind Co Ltd | Light-receiving high voltage generation circuit |
JP2604819B2 (en) * | 1988-08-19 | 1997-04-30 | 株式会社日立製作所 | Power supply device, light emitting device, fixing device, and recording device |
US4881512A (en) * | 1988-08-31 | 1989-11-21 | General Motors Corporation | Internal combustion engine ignition system |
IT1232580B (en) * | 1989-02-13 | 1992-02-26 | Fiat Auto Spa | STATIC IGNITION DEVICE FOR INTERNAL COMBUSTION ENGINES |
US5008798A (en) * | 1989-12-21 | 1991-04-16 | Hughes Aircraft Company | Compact high voltage power supply |
US5060623A (en) * | 1990-12-20 | 1991-10-29 | Caterpillar Inc. | Spark duration control for a capacitor discharge ignition system |
-
1989
- 1989-06-02 DE DE3917968A patent/DE3917968A1/en not_active Withdrawn
-
1990
- 1990-02-23 WO PCT/DE1990/000123 patent/WO1990015242A1/en active IP Right Grant
- 1990-02-23 EP EP90903317A patent/EP0427801B1/en not_active Expired - Lifetime
- 1990-02-23 US US07/777,543 patent/US5255660A/en not_active Expired - Fee Related
- 1990-02-23 DE DE59005927T patent/DE59005927D1/en not_active Expired - Fee Related
- 1990-02-23 JP JP2503802A patent/JP2783677B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
Title |
---|
See references of WO9015242A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP0427801B1 (en) | 1994-06-01 |
JPH04505200A (en) | 1992-09-10 |
JP2783677B2 (en) | 1998-08-06 |
DE3917968A1 (en) | 1990-12-06 |
WO1990015242A1 (en) | 1990-12-13 |
DE59005927D1 (en) | 1994-07-07 |
US5255660A (en) | 1993-10-26 |
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