EP0420764A3 - Charge transfer device with meander channel - Google Patents

Charge transfer device with meander channel Download PDF

Info

Publication number
EP0420764A3
EP0420764A3 EP19900402694 EP90402694A EP0420764A3 EP 0420764 A3 EP0420764 A3 EP 0420764A3 EP 19900402694 EP19900402694 EP 19900402694 EP 90402694 A EP90402694 A EP 90402694A EP 0420764 A3 EP0420764 A3 EP 0420764A3
Authority
EP
European Patent Office
Prior art keywords
transfer device
charge transfer
meander channel
meander
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19900402694
Other versions
EP0420764B1 (en
EP0420764A2 (en
Inventor
Hideo Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of EP0420764A2 publication Critical patent/EP0420764A2/en
Publication of EP0420764A3 publication Critical patent/EP0420764A3/en
Application granted granted Critical
Publication of EP0420764B1 publication Critical patent/EP0420764B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
EP90402694A 1989-09-28 1990-09-28 Charge transfer device with meander channel Expired - Lifetime EP0420764B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP250530/89 1989-09-28
JP1250530A JPH03114236A (en) 1989-09-28 1989-09-28 Charge transfer device

Publications (3)

Publication Number Publication Date
EP0420764A2 EP0420764A2 (en) 1991-04-03
EP0420764A3 true EP0420764A3 (en) 1991-07-24
EP0420764B1 EP0420764B1 (en) 1997-03-19

Family

ID=17209268

Family Applications (1)

Application Number Title Priority Date Filing Date
EP90402694A Expired - Lifetime EP0420764B1 (en) 1989-09-28 1990-09-28 Charge transfer device with meander channel

Country Status (4)

Country Link
US (1) US5075747A (en)
EP (1) EP0420764B1 (en)
JP (1) JPH03114236A (en)
DE (1) DE69030227T2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960001182B1 (en) * 1992-05-20 1996-01-19 삼성전자주식회사 Solid state image pick-up device
US5760431A (en) * 1995-11-29 1998-06-02 Massachusetts Institute Of Technology Multidirectional transfer charge-coupled device
KR100239409B1 (en) * 1997-01-25 2000-01-15 김영환 Solid state image sensing device
JP4981255B2 (en) * 2005-01-24 2012-07-18 オンセミコンダクター・トレーディング・リミテッド Charge coupled device and solid-state imaging device
US7602431B2 (en) * 2005-09-28 2009-10-13 Sony Corporation Solid-state imaging element and solid-state imaging apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291239A (en) * 1980-02-25 1981-09-22 Rca Corporation Architecture line-transfer CCD imagers
US4380056A (en) * 1980-10-10 1983-04-12 Hughes Aircraft Company Charge coupled device focal plane with serial register having interdigitated electrodes
EP0333260A1 (en) * 1988-03-15 1989-09-20 Koninklijke Philips Electronics N.V. Charge-coupled device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2646301C3 (en) * 1975-10-31 1981-01-15 Fujitsu Ltd., Kawasaki, Kanagawa (Japan) Charge coupled semiconductor device
JPS5814749B2 (en) * 1976-04-15 1983-03-22 富士通株式会社 charge transfer device
US4103347A (en) * 1976-10-29 1978-07-25 Texas Instruments Incorporated Zig-zag sps ccd memory
DE2842856C3 (en) * 1978-10-02 1981-09-03 Siemens AG, 1000 Berlin und 8000 München Charge shift storage in serial-parallel-serial organization with full basic charge operation
US4446473A (en) * 1981-04-30 1984-05-01 Fairchild Camera & Instrument Corporation Serpentine charge transfer device
JPS6041374A (en) * 1983-08-16 1985-03-05 Canon Inc Frame transfer image pickup element and image pickup device using this element
JPS6169173A (en) * 1984-09-12 1986-04-09 Sanyo Electric Co Ltd Charge coupled device
US4987466A (en) * 1988-06-07 1991-01-22 Kabushiki Kaisha Toshiba Solid state image sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291239A (en) * 1980-02-25 1981-09-22 Rca Corporation Architecture line-transfer CCD imagers
US4380056A (en) * 1980-10-10 1983-04-12 Hughes Aircraft Company Charge coupled device focal plane with serial register having interdigitated electrodes
EP0333260A1 (en) * 1988-03-15 1989-09-20 Koninklijke Philips Electronics N.V. Charge-coupled device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. SC-13, no. 1, February 1978, pages 66-70, New York, US; H. SEI et al.: "A meander channel CCD linear image sensor" *
PATENT ABSTRACTS OF JAPAN, vol. 10, no. 236 (E-428)[2292], 15th August 1986; & JP-A-61 69 173 (SANYO ELECTRIC CO., LTD) 09-04-1986 *
PATENT ABSTRACTS OF JAPAN, vol. 9, no. 165 (E-327)[1888], 10th July 1985; & JP-A-60 41 374 (CANON K.K.) 05-03-1985 *

Also Published As

Publication number Publication date
DE69030227T2 (en) 1997-07-10
JPH03114236A (en) 1991-05-15
DE69030227D1 (en) 1997-04-24
EP0420764B1 (en) 1997-03-19
US5075747A (en) 1991-12-24
EP0420764A2 (en) 1991-04-03

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