EP0416626A3 - Electron emitting semiconductor device - Google Patents

Electron emitting semiconductor device Download PDF

Info

Publication number
EP0416626A3
EP0416626A3 EP19900117200 EP90117200A EP0416626A3 EP 0416626 A3 EP0416626 A3 EP 0416626A3 EP 19900117200 EP19900117200 EP 19900117200 EP 90117200 A EP90117200 A EP 90117200A EP 0416626 A3 EP0416626 A3 EP 0416626A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
emitting semiconductor
electron emitting
electron
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19900117200
Other versions
EP0416626B1 (en
EP0416626A2 (en
Inventor
Toshihiko C/O Canon Kabushiki Kaisha Takeda
Takeo C/O Canon Kabushiki Kaisha Tsukamoto
Nobuo C/O Canon Kabushiki Kaisha Watanabe
Masahiko C/O Canon Kabushiki Kaisha Okunuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23394589A external-priority patent/JP2820450B2/en
Priority claimed from JP1233943A external-priority patent/JPH0395825A/en
Priority claimed from JP2221713A external-priority patent/JPH04102373A/en
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP0416626A2 publication Critical patent/EP0416626A2/en
Publication of EP0416626A3 publication Critical patent/EP0416626A3/en
Application granted granted Critical
Publication of EP0416626B1 publication Critical patent/EP0416626B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
EP19900117200 1989-09-07 1990-09-06 Electron emitting semiconductor device Expired - Lifetime EP0416626B1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP233945/89 1989-09-07
JP23394589A JP2820450B2 (en) 1989-09-07 1989-09-07 Semiconductor electron-emitting device
JP1233943A JPH0395825A (en) 1989-09-07 1989-09-07 Semiconductor electron emitting element
JP233943/89 1989-09-07
JP221713/90 1990-08-22
JP2221713A JPH04102373A (en) 1990-08-22 1990-08-22 Semiconductor electron emitting element

Publications (3)

Publication Number Publication Date
EP0416626A2 EP0416626A2 (en) 1991-03-13
EP0416626A3 true EP0416626A3 (en) 1991-05-29
EP0416626B1 EP0416626B1 (en) 1994-06-01

Family

ID=27330576

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19900117200 Expired - Lifetime EP0416626B1 (en) 1989-09-07 1990-09-06 Electron emitting semiconductor device

Country Status (2)

Country Link
EP (1) EP0416626B1 (en)
DE (1) DE69009357T2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0512988A (en) * 1990-10-13 1993-01-22 Canon Inc Semiconductor electron emitting element
DE102020113351A1 (en) * 2020-05-18 2021-11-18 Dbt Gmbh Electron emitter structure, external photo effect emitter, particle collecting device, tunnel surface emitter, semiconductor-based direct emitter, and liquid ionizer with the same, method for generating free electrons and method for collecting particles

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766340A (en) * 1984-02-01 1988-08-23 Mast Karel D V D Semiconductor device having a cold cathode
EP0331373A2 (en) * 1988-02-27 1989-09-06 Canon Kabushiki Kaisha Semiconductor electron emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766340A (en) * 1984-02-01 1988-08-23 Mast Karel D V D Semiconductor device having a cold cathode
EP0331373A2 (en) * 1988-02-27 1989-09-06 Canon Kabushiki Kaisha Semiconductor electron emitting device

Also Published As

Publication number Publication date
DE69009357T2 (en) 1994-10-06
DE69009357D1 (en) 1994-07-07
EP0416626B1 (en) 1994-06-01
EP0416626A2 (en) 1991-03-13

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