EP0353632A2 - Multiplicateur d'électrons amorphe - Google Patents

Multiplicateur d'électrons amorphe Download PDF

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Publication number
EP0353632A2
EP0353632A2 EP89113874A EP89113874A EP0353632A2 EP 0353632 A2 EP0353632 A2 EP 0353632A2 EP 89113874 A EP89113874 A EP 89113874A EP 89113874 A EP89113874 A EP 89113874A EP 0353632 A2 EP0353632 A2 EP 0353632A2
Authority
EP
European Patent Office
Prior art keywords
electron
electron multiplier
arrangement
electrons
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP89113874A
Other languages
German (de)
English (en)
Other versions
EP0353632A3 (fr
Inventor
Zeev Vager
Ron Naaman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yeda Research and Development Co Ltd
Original Assignee
Yeda Research and Development Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yeda Research and Development Co Ltd filed Critical Yeda Research and Development Co Ltd
Publication of EP0353632A2 publication Critical patent/EP0353632A2/fr
Publication of EP0353632A3 publication Critical patent/EP0353632A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/32—Secondary-electron-emitting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/24—Dynodes having potential gradient along their surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/12—CRTs having luminescent screens

Definitions

  • the present invention relates to detectors of radiation, atoms, molecules and charged species generally, and more particularly to electron multipliers and devices employing same.
  • Discrete dynode multipliers have been employed for detection of electrons, ions and short wavelength radiation such as X-ray and Vacuum Ultraviolet radiation.
  • Dynode multipliers operate by emitting secondary electrons upon impingement of a high energy beam upon a first dynode. The secondary electrons are accelerated by an electric field so that they collide with a further dynode, which again emits a few secondary electrons for each impinging electron. This process continues for multiple dynodes, thus producing electron amplification.
  • Such electron multipliers comprise a hollow glass tube, about 1 mm in diameter, having an internal resistive surface which has a high secondary electron emission coefficient.
  • the electron multiplier is operated under vacuum and a potential difference is applied across electrodes at the ends of the tube.
  • an electron or other charged particle or photon enters the low potential end of the tube and collides with the tube wall, several secondary electrons are produced.
  • the secondary electrons are accelerated by the applied axial electrical field and undergo further collisions with the wall and thus produce more secondary electrons. This process is repeated many times along the channel, producing a large number of electrons.
  • a channel plate electron multiplier or microchannel plate may be formed of a parallel array of straight single-­channel multipliers and produces a useful gain of about 106, which is limited by ionic feedback, whereas single channel electron multipliers achieve a gain of up to 108.
  • MCP microchannel plate
  • two plates may be operated in cascade or a single sandwich plate can be provided by fusing two or more separate plates into a single unit.
  • Microchannel plates have limited usefulness due to relatively low production yields and consequently high cost, as well as limited efficiency.
  • the present invention seeks to provide an improved electron multiplier which avoids the limitations of the prior art, and due to its high efficiency and low cost may find application in mass produced products which currently employ cathode ray tubes, such as televisions.
  • an electron multiplier comprising a multi-layer arrangement of material which provides secondary electron emissions when impinged upon by electrons and apparatus for applying an electric field across the material.
  • the multi-layer arrangement of material comprises a collection of beads of glass and means for applying an electric field across the layer.
  • the multi-layer arrangement comprises an amorphous arrangement of material.
  • the material may alternatively comprise any suitable material which provides secondary electron emission in response to impingement of electrons thereon.
  • suitable materials are: plastic particles at least partially coated with a metal, porous materials, such as lava rock, at least partially coated with a metal, particulate metal or metal ores.
  • the materials are in relatively small particles, of maximum dimensions 1 - 1000 microns.
  • the material may be a non-particulate material, such as a highly porous material.
  • the thickness of the collection is at least five bead diameters and may be as great as about one centimeter.
  • a preferred range of thickness of the collection is 5 - 50 bead diameters.
  • the surface conductivity of the material is of the order of tens to hundreds of megaohms.
  • a preferable glass is metal doped glass.
  • a standard doped glass such as Corning 8161 glass is preferred. This glass has a high concentration of lead oxide, typically 54.9% by weight.
  • the structure of the collection is maintained by sintering the glass beads or the other materials in a planar array.
  • the invention also includes an active amplifier comprising a collection of beads of glass and means for applying an electric field across the collection of beads, in accordance with an embodiment of the present invention.
  • the invention further includes a novel cathode ray tube comprising an electron emitter, an electron multiplier as described above, arranged to receive electrons from the emitter and a phosphor screen arranged to be illuminated by the secondary electron emission from the electron multiplier.
  • the invention also includes relatively inexpensive, light weight and low radiation emissive devices, such as televisions, oscilloscopes, computer displays and night vision apparatus employing a cathode ray tube as described above.
  • the electron multiplier of the present invention is operative in response to impinging X-ray radiation and is thus suitable for use in X-ray imaging.

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Electron Tubes For Measurement (AREA)
EP89113874A 1988-08-04 1989-07-27 Multiplicateur d'électrons amorphe Withdrawn EP0353632A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL87341 1988-08-04
IL87341A IL87341A (en) 1988-08-04 1988-08-04 Amorphous electron multiplier

Publications (2)

Publication Number Publication Date
EP0353632A2 true EP0353632A2 (fr) 1990-02-07
EP0353632A3 EP0353632A3 (fr) 1990-08-08

Family

ID=11059123

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89113874A Withdrawn EP0353632A3 (fr) 1988-08-04 1989-07-27 Multiplicateur d'électrons amorphe

Country Status (3)

Country Link
EP (1) EP0353632A3 (fr)
JP (1) JPH02177244A (fr)
IL (1) IL87341A (fr)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476975A1 (fr) * 1990-09-19 1992-03-25 Yeda Research And Development Company Limited Dispositif d'affichage à panneau plat
EP0826230A1 (fr) * 1995-05-15 1998-03-04 Electron R+D international, Inc. Procede de fabrication de multiplicateurs d'electrons
EP0888633A1 (fr) * 1995-11-14 1999-01-07 Yeda Research & Development Company, Ltd. Spectrometre de masse a faible vide
EP1424718A1 (fr) * 2002-11-29 2004-06-02 Ngk Insulators, Ltd. Emetteur électronique et dispositif émetteur de lumière
US6897620B1 (en) 2002-06-24 2005-05-24 Ngk Insulators, Ltd. Electron emitter, drive circuit of electron emitter and method of driving electron emitter
DE10353131A1 (de) * 2003-10-31 2005-06-16 Hahn-Meitner-Institut Berlin Gmbh Mikrokanalplatte zur Elektronenvervielfachung und Verfahren zu ihrer Herstellung
US6936972B2 (en) 2000-12-22 2005-08-30 Ngk Insulators, Ltd. Electron-emitting element and field emission display using the same
US6946800B2 (en) 2002-02-26 2005-09-20 Ngk Insulators, Ltd. Electron emitter, method of driving electron emitter, display and method of driving display
US6975074B2 (en) 2002-11-29 2005-12-13 Ngk Insulators, Ltd. Electron emitter comprising emitter section made of dielectric material
US7067970B2 (en) 2002-09-30 2006-06-27 Ngk Insulators, Ltd. Light emitting device
US7071628B2 (en) 2002-11-29 2006-07-04 Ngk Insulators, Ltd. Electronic pulse generation device
US7129642B2 (en) 2002-11-29 2006-10-31 Ngk Insulators, Ltd. Electron emitting method of electron emitter
US7176609B2 (en) 2003-10-03 2007-02-13 Ngk Insulators, Ltd. High emission low voltage electron emitter
US7187114B2 (en) 2002-11-29 2007-03-06 Ngk Insulators, Ltd. Electron emitter comprising emitter section made of dielectric material
US7307383B2 (en) 2003-10-03 2007-12-11 Ngk Insulators, Ltd. Electron emitter and method of producing the same
US7336026B2 (en) 2003-10-03 2008-02-26 Ngk Insulators, Ltd. High efficiency dielectric electron emitter
US7379037B2 (en) 2003-03-26 2008-05-27 Ngk Insulators, Ltd. Display apparatus, method of driving display apparatus, electron emitter, method of driving electron emitter, apparatus for driving electron emitter, electron emission apparatus, and method of driving electron emission apparatus
US7474060B2 (en) 2003-08-22 2009-01-06 Ngk Insulators, Ltd. Light source
US7719201B2 (en) 2003-10-03 2010-05-18 Ngk Insulators, Ltd. Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1575647A (fr) * 1967-03-29 1969-07-25
US3627550A (en) * 1968-12-30 1971-12-14 Philips Corp Reducible vitreous material
GB1295832A (fr) * 1968-12-30 1972-11-08
EP0107254A1 (fr) * 1982-10-22 1984-05-02 Philips Electronics Uk Limited Ecran de visualisation en couleurs

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1575647A (fr) * 1967-03-29 1969-07-25
US3627550A (en) * 1968-12-30 1971-12-14 Philips Corp Reducible vitreous material
GB1295832A (fr) * 1968-12-30 1972-11-08
EP0107254A1 (fr) * 1982-10-22 1984-05-02 Philips Electronics Uk Limited Ecran de visualisation en couleurs

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVIEW OF SCIENTIFIC INSTRUMENTS. vol. 45, no. 9, September 1974, NEW YORK US pages 1098 - 1105; M Lampton et al.: "The Ranicon: A resistive anode image converter" *

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476975A1 (fr) * 1990-09-19 1992-03-25 Yeda Research And Development Company Limited Dispositif d'affichage à panneau plat
US6015588A (en) * 1993-07-15 2000-01-18 Electron R+D International, Inc. Method for fabricating electron multipliers
EP0826230A1 (fr) * 1995-05-15 1998-03-04 Electron R+D international, Inc. Procede de fabrication de multiplicateurs d'electrons
EP0826230A4 (fr) * 1995-05-15 1998-08-12 Electron R & D International I Procede de fabrication de multiplicateurs d'electrons
EP0888633A1 (fr) * 1995-11-14 1999-01-07 Yeda Research & Development Company, Ltd. Spectrometre de masse a faible vide
EP0888633A4 (fr) * 1995-11-14 1999-01-27
US6936972B2 (en) 2000-12-22 2005-08-30 Ngk Insulators, Ltd. Electron-emitting element and field emission display using the same
US6946800B2 (en) 2002-02-26 2005-09-20 Ngk Insulators, Ltd. Electron emitter, method of driving electron emitter, display and method of driving display
US6897620B1 (en) 2002-06-24 2005-05-24 Ngk Insulators, Ltd. Electron emitter, drive circuit of electron emitter and method of driving electron emitter
US7067970B2 (en) 2002-09-30 2006-06-27 Ngk Insulators, Ltd. Light emitting device
US7129642B2 (en) 2002-11-29 2006-10-31 Ngk Insulators, Ltd. Electron emitting method of electron emitter
US6975074B2 (en) 2002-11-29 2005-12-13 Ngk Insulators, Ltd. Electron emitter comprising emitter section made of dielectric material
EP1424718A1 (fr) * 2002-11-29 2004-06-02 Ngk Insulators, Ltd. Emetteur électronique et dispositif émetteur de lumière
US7071628B2 (en) 2002-11-29 2006-07-04 Ngk Insulators, Ltd. Electronic pulse generation device
US7187114B2 (en) 2002-11-29 2007-03-06 Ngk Insulators, Ltd. Electron emitter comprising emitter section made of dielectric material
US7288881B2 (en) 2002-11-29 2007-10-30 Ngk Insulators, Ltd. Electron emitter and light emission element
US7379037B2 (en) 2003-03-26 2008-05-27 Ngk Insulators, Ltd. Display apparatus, method of driving display apparatus, electron emitter, method of driving electron emitter, apparatus for driving electron emitter, electron emission apparatus, and method of driving electron emission apparatus
US7474060B2 (en) 2003-08-22 2009-01-06 Ngk Insulators, Ltd. Light source
US7176609B2 (en) 2003-10-03 2007-02-13 Ngk Insulators, Ltd. High emission low voltage electron emitter
US7307383B2 (en) 2003-10-03 2007-12-11 Ngk Insulators, Ltd. Electron emitter and method of producing the same
US7336026B2 (en) 2003-10-03 2008-02-26 Ngk Insulators, Ltd. High efficiency dielectric electron emitter
US7719201B2 (en) 2003-10-03 2010-05-18 Ngk Insulators, Ltd. Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit
DE10353131A1 (de) * 2003-10-31 2005-06-16 Hahn-Meitner-Institut Berlin Gmbh Mikrokanalplatte zur Elektronenvervielfachung und Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
IL87341A (en) 1992-11-15
IL87341A0 (en) 1989-01-31
EP0353632A3 (fr) 1990-08-08
JPH02177244A (ja) 1990-07-10

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