EP0200624A1 - Line transfer read-out device with feed back - Google Patents

Line transfer read-out device with feed back Download PDF

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Publication number
EP0200624A1
EP0200624A1 EP86400810A EP86400810A EP0200624A1 EP 0200624 A1 EP0200624 A1 EP 0200624A1 EP 86400810 A EP86400810 A EP 86400810A EP 86400810 A EP86400810 A EP 86400810A EP 0200624 A1 EP0200624 A1 EP 0200624A1
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Prior art keywords
line
matrix
read
register
transfer
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EP86400810A
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German (de)
French (fr)
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EP0200624B1 (en
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Gilles Thomson-Csf Scpi Boucharlat
Louis Thomson-Csf Scpi Brissot
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Thales SA
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Thomson CSF SA
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]

Definitions

  • the present invention relates to a line transfer reading device with feedback.
  • FIG. 1 there is shown - schematically such a line transfer reading device.
  • This device comprises a matrix 1 of photosensitive detectors d arranged in the form of rows and columns.
  • Conductive buses 2 connect the detectors arranged in the same column to the input of a line memory 3.
  • a shift register 4 makes it possible to address a line of detectors of the matrix. The charges coming from the detectors of the addressed line are transferred into the line memory 3, then into a charge transfer shift register 5, the output of which is connected to an amplifier 6.
  • a training load Q E is used up to the load transfer shift register 5. This charge is transferred from each stage of the register 5 to the memory 3 then to a bus 2, and is then superimposed on the signal charges Q s , which arrive on this bus, transferred to the line memory, then to the register 5, to be read superimposed on the signal charges.
  • FIG. 1 an embodiment has been shown in which a stage 7 provides the injection of identical training charges at the entry of the register 5. While the register 5 is read, one introduces into each stage of the register just read a training load Q E.
  • the present invention relates to a line transfer reading device with feedback which enables the effects of incomplete reading of the loads on the buses to be substantially canceled.
  • the invention therefore makes it possible to improve the vertical FTM, in the case of sequential vertical addressing and makes it possible to eliminate the spurious signals in the case of random vertical addressing.
  • the present invention relates to a device for reading a matrix of photosensitive detectors by line transfer, provided with a stage allowing the serial injection of a drive load at the input of a register ensuring the reading successively of each row of matrix detectors, characterized in that it comprises means ensuring a reaction of part of the video signal of a row of the matrix which is read on the injection stage, so as to modulate the value of the training load being added to the video signal of the line of the matrix which will be read then, this modulation being inversely proportional to the video signal of the line which is read and dependent on the transfer ineffectiveness of the device.
  • FIG. 3 represents the diagram of an embodiment of a photosensitive device by line transfer according to the invention.
  • This device differs from the prior art in that it includes means ensuring a reaction of part of the video signal from a line of the matrix which is read on the injection stage 7 so as to modulate the value of the charge. drive added to the video signal of the matrix line which will be played next.
  • these means are - shown diagrammatically by a potentiometer 8, the midpoint of which is connected to the injection stage 7 of the drive charges.
  • FIG. 4 is a diagram illustrating the operation of the device of FIG. 3.
  • the output signal from register 5 is shown when reading a line N.
  • This output signal consists of the superimposition of a constant drive load Q E and d 'a signal load in steps Q s .
  • the residual signal Q r is shown , having the same profile as Q s which is present in the register 5, during the next reading which can be the reading of the line N + 1 by example.
  • a drive load Q E is injected into the register 5 which aims to compensate for the signal Q i.
  • the training load Q E in FIG. 4, on the right, is therefore not constant but has a profile opposite to that of Q ,.
  • the modulation of the training load which is carried out modifies its value inversely proportional to that of the read signal of the line which is read and as a function of the transfer ineffectiveness of the device.
  • This modulation of the training load is carried out for each value of the training load which is entered in a stage of register 5.
  • FIG. 5a an embodiment of the injection stage 7 is shown in detail.
  • This injection stage 7 consists of a diode 8 followed by two grids 9 and 10 which lead to the shift register 5.
  • the direction of charge transfer, from left to right, in the injection stage and in the register is imposed by successively implantations of type N- and N in a substrate semiconductor 11 of type P.
  • the charge transfer takes place in volume.
  • the charges are injected into stage 7 according to the "fill and spill” mode.
  • the injection diode 8 is therefore successively brought to a low level and then to a high level, as illustrated in FIG. 5b which represents the surface potentials in the substrate.
  • FIG. 5b which represents the surface potentials in the substrate.
  • the gate 9 receives a voltage V CR coming from the midpoint of the potentiometer 8 - see FIG. 3 - and which is proportional to the output signal from the register 5.
  • a constant voltage can be applied to the grid 9 and a variable voltage to the grid 10 so as to modulate the value of the training load.
  • the invention has another advantage which is to linearize the transfer characteristic representing the amount of charge read Q s at the output of register 5 for a line as a function of the amount of charge q on the corresponding buses before the transfer.
  • This characteristic is represented in FIG. 6 where a non-linear characteristic has also been shown in dotted lines.
  • FIG. 7 represents the changes in the potential of a bus P during a reading sequence.
  • Reading the charges brings the potential of the bus to a point A 'different from point A.
  • the gray range is not degraded if the device is used for image analysis.
  • the feedback according to the invention where the drive load for each bus is modulated as a function of the amplitude of the signals of the previously read line, so as to compensate for the residual signal load, makes it possible to return to substantially the same point A after the training load, the signal load and after reading the loads.
  • the rest point on the curve is stabilized and the transfer characteristic is linearized.

Abstract

La présente invention concerne un dispositif de lecture d'une matrice de détecteurs photosensibles par transfert de ligne avec contre-réaction dans lequel des moyens (8) assurent une réaction d'une partie du signal vidéo d'une ligne de la matrice qui est lue, vers un étage (7) d'injection en série d'une charge d'entraînement (QE) à l'entrée d'un registre (5) assurant la lecture successivement de chaque ligne de détecteurs de la matrice. On réalise ainsi une modulation de la valeur de la charge d'entraînement (QE) destinée à s'ajouter au signal vidéo de la ligne de la matrice qui sera lue ensuite, cette modulation étant inversement proportionnelle au signal vidéo de la ligne qui est lue et dépendant de l'inefficacité de transfert du dispositif.The present invention relates to a device for reading a matrix of photosensitive detectors by line transfer with feedback in which means (8) provide a reaction of part of the video signal of a line of the matrix which is read. , towards a stage (7) of serial injection of a training load (QE) at the input of a register (5) ensuring the successive reading of each row of detectors of the matrix. This modulates the value of the training load (QE) intended to be added to the video signal of the line of the matrix which will then be read, this modulation being inversely proportional to the video signal of the line which is read. and dependent on the transfer ineffectiveness of the device.

Description

La présente invention concerne un dispositif de lecture par transfert de ligne avec contre-réaction.The present invention relates to a line transfer reading device with feedback.

Il est bien connu dans l'art antérieur d'effectuer la lecture de matrices de détecteurs photosensibles, tels que par exemple des diodes ou des transistors MOS, par la méthode du transfert de ligne.It is well known in the prior art to read arrays of photosensitive detectors, such as for example diodes or MOS transistors, by the line transfer method.

Sur la figure 1, on a représenté de façon - schématique un tel dispositif de lecture par transfert de ligne. Ce dispositif comporte une matrice 1 de détecteurs photosensibles d disposés sous forme de lignes et de colonnes. Des bus conducteurs 2 relient les détecteurs disposés selon une même colonne à l'entrée d'une mémoire de ligne 3. Un registre à décalage 4 permet d'adresser une ligne de détecteurs de la matrice. Les charges provenant des détecteurs de la ligne adressée sont transférées dans la mémoire de ligne 3, puis dans un registre à décalage à transfert de charge 5 dont la sortie est reliée à un amplificateur 6.In Figure 1, there is shown - schematically such a line transfer reading device. This device comprises a matrix 1 of photosensitive detectors d arranged in the form of rows and columns. Conductive buses 2 connect the detectors arranged in the same column to the input of a line memory 3. A shift register 4 makes it possible to address a line of detectors of the matrix. The charges coming from the detectors of the addressed line are transferred into the line memory 3, then into a charge transfer shift register 5, the output of which is connected to an amplifier 6.

Pour améliorer l'efficacité de transfert des charges provenant des bus 2, de capacités élevées de l'ordre de quelques picofarads par exemple, jusqu'au registre à décalage à transfert de charge 5, on utilise une charge d'entraînement QE. Cette charge est transférée de chaque étage du registre 5 vers la mémoire 3 puis vers .un bus 2, et se trouve ensuite superposée aux charges-signal Qs, qui arrivent sur ce bus, transférée dans la mémoire de ligne, puis dans le registre 5, pour être lue superposée aux charges-signal.To improve the transfer efficiency of the loads coming from the buses 2, of high capacities of the order of a few picofarads for example, up to the load transfer shift register 5, a training load Q E is used . This charge is transferred from each stage of the register 5 to the memory 3 then to a bus 2, and is then superimposed on the signal charges Q s , which arrive on this bus, transferred to the line memory, then to the register 5, to be read superimposed on the signal charges.

Sur la figure 1, on a représenté un mode de réalisation dans lequel un étage 7 assure l'injection de charges d'entraînement identiques à l'entrée du registre 5. Alors qu'on lit le registre 5, on introduit dans chaque étage du registre qui vient d'être lu une charge d'entraînement QE.In FIG. 1, an embodiment has been shown in which a stage 7 provides the injection of identical training charges at the entry of the register 5. While the register 5 is read, one introduces into each stage of the register just read a training load Q E.

L'utilisation de charges d'entraînement suivant un tel parcours (registre, mémoire, bus ensuite bus, mémoire, registre et lecture avec les charges-signal) est connue dans la littérature anglo-saxonne sous le nom de "Charge Priming Device" ou C.P.D. On améliore ainsi l'efficacité de transfert c'est-à-dire la lecture des charges provenant des bus.The use of training loads along such a route (register, memory, bus then bus, memory, register and reading with the signal charges) is known in the Anglo-Saxon literature under the name of "Charge Priming Device" or CPD This improves the transfer efficiency, that is to say the reading of the loads coming from the buses.

Une lecture incomplète des charges provenant des bus modifie le potentiel de repos des bus et introduit un mélange des informations provenant de deux lignes -de la matrice lues successivement. Ceci se traduit par une perte de résolution verticale lorsque le dispositif est utilisé pour l'analyse d'image, c'est-à-dire lorsqu'on lit successivement deux lignes adjacentes. Le phénomène observé est beaucoup plus gênant lorsque les deux lignes lues successivement ne sont pas adjacentes, c'est-à-dire lorsqu'on effectue un adressage aléatoire des lignes, comme en robotique par exemple. Cela se traduit alors par l'apparition de signaux parasites.An incomplete reading of the loads coming from the buses modifies the resting potential of the buses and introduces a mixture of the information coming from two lines - of the matrix read successively. This results in a loss of vertical resolution when the device is used for image analysis, that is to say when two adjacent lines are successively read. The phenomenon observed is much more annoying when the two lines read successively are not adjacent, that is to say when performing a random addressing of the lines, as in robotics for example. This then results in the appearance of spurious signals.

Sur la figure 2, on a représenté, sur la gauche, les quantités de charges-signal Q s obtenues à la sortie du registre 5 lorsqu'on lit une ligne N. Ces charges-signal sont superposées à- une charge d'entranement QE , de valeur constante, représentée en pointillés.In FIG. 2, the quantities of signal charges Q s obtained at the output of register 5 are shown on the left when a line N is read. These signal charges are superimposed on a drive charge Q E , of constant value, represented by dotted lines.

Sur la figure 2, partie droite, on a représenté la lecture de la ligne N + 1 qui ne contient pas de charge-signal. On trouve, superposées à la charge d'entrainement constante QE, une charge-signal résiduelle Q r, qui a le même profil que la charge-signal Qε de la ligne N qui est représentée sur la figure 2, partie gauche.In Figure 2, right part, there is shown the reading of the line N + 1 which does not contain a signal load. One finds, superimposed on the constant training charge Q E , a residual signal charge Q r , which has the same profile as the signal charge Qε of line N which is represented in FIG. 2, left part.

La présente invention concerne un dispositif de lecture par transfert de ligne avec contre-réaction qui permet d'annuler sensiblement les effets de la lecture incomplète des charges se trouvant sur les bus.The present invention relates to a line transfer reading device with feedback which enables the effects of incomplete reading of the loads on the buses to be substantially canceled.

L'invention permet donc d'améliorer la FTM verticale, dans le cas d'un adressage vertical séquentiel et permet d'éliminer les signaux parasites dans le cas d'un adressage vertical aléatoire.The invention therefore makes it possible to improve the vertical FTM, in the case of sequential vertical addressing and makes it possible to eliminate the spurious signals in the case of random vertical addressing.

La présente invention concerne un dispositif de lecture d'une matrice de détecteurs photosensibles par transfert de ligne, muni d'un étage permettant l'injection en série d'une charge d'entraînement à l'entrée d'un registre assurant la lecture successivement de chaque ligne de détecteurs de la matrice, caractérisé en ce qu'il comporte des moyens assurant une réaction d'une partie du signal vidéo d'une ligne de la matrice qui est lue sur l'étage d'injection, de façon à moduler la valeur de la charge d'entraînement s'ajoutant au signal vidéo de la ligne de la matrice qui sera lue ensuite, cette modulation étant inversement proportionnelle au signal vidéo de la ligne qui est lue et dépendant de l'inefficacité de transfert du dispositif.The present invention relates to a device for reading a matrix of photosensitive detectors by line transfer, provided with a stage allowing the serial injection of a drive load at the input of a register ensuring the reading successively of each row of matrix detectors, characterized in that it comprises means ensuring a reaction of part of the video signal of a row of the matrix which is read on the injection stage, so as to modulate the value of the training load being added to the video signal of the line of the matrix which will be read then, this modulation being inversely proportional to the video signal of the line which is read and dependent on the transfer ineffectiveness of the device.

D'autre objets, caractéristiques et résultats de l'invention ressortiront de la description suivante, donnée à titre d'exemple non limitatif et illustrée par les figures annexées qui représentent

  • -la figure 1, le schéma d'un dispositif de lecture par transfert de ligne selon l'art antérieur,
  • -la figure 2, un schéma illustrant le fonctionnement du dispositif de la figure 1,
  • -la figure 3, le schéma d'un mode de réalisation d'un dispositif de lecture par transfert de ligne selon l'invention ;
  • -la figure 4, un schéma illustrant le fonctionnement du dispositif de la figure 3 ;
  • -les figures 5a et b, le schéma d'un mode de réalisation d'un étage d'injection des charges et un schéma expliquant son fonctionnement;
  • -la figure 6, la caractéristique de transfert des charges entre les bus et le registre ;
  • -la figure 7, la courbe montrant les évolutions du potentiel d'un bus au cours d'une séquence de lecture.
Other objects, characteristics and results of the invention will emerge from the following description, given by way of nonlimiting example and illustrated by the appended figures which represent
  • FIG. 1, the diagram of a line transfer reading device according to the prior art,
  • FIG. 2, a diagram illustrating the operation of the device of FIG. 1,
  • FIG. 3, the diagram of a mode of production of a line transfer reading device according to the invention;
  • FIG 4, a diagram illustrating the operation of the device of Figure 3;
  • FIGS. 5a and b, the diagram of an embodiment of a charge injection stage and a diagram explaining its operation;
  • FIG. 6, the charge transfer characteristic between the buses and the register;
  • FIG. 7, the curve showing the changes in the potential of a bus during a reading sequence.

Sur les différentes figures, les mêmes repères désignent les mêmes éléments, mais, pour des raisons de clarté, les cotes et proportions des divers éléments ne sont pas respectées.In the different figures, the same references designate the same elements, but, for reasons of clarity, the dimensions and proportions of the various elements are not observed.

La figure 3 représente le schéma d'un mode de réalisation d'un dispositif photosensible par transfert de ligne selon l'invention.FIG. 3 represents the diagram of an embodiment of a photosensitive device by line transfer according to the invention.

Ce dispositif diffère de l'art antérieur car il comporte des moyens assurant une réaction d'une partie du signal video d'une ligne de la matrice qui est lue sur l'étage d'injection 7 de façon à moduler la valeur de la charge d'entraînement s'ajoutant au signal vidéo de la ligne de la matrice qui sera lue ensuite. Sur la figure 3, ces moyens sont - schématisés par une potentiomètre 8 dont le point milieu est relié à l'étage d'injection 7 des charges d'entraînement.This device differs from the prior art in that it includes means ensuring a reaction of part of the video signal from a line of the matrix which is read on the injection stage 7 so as to modulate the value of the charge. drive added to the video signal of the matrix line which will be played next. In FIG. 3, these means are - shown diagrammatically by a potentiometer 8, the midpoint of which is connected to the injection stage 7 of the drive charges.

La figure 4 est un schéma illustrant le fonctionnement du dispositif de la figure 3.FIG. 4 is a diagram illustrating the operation of the device of FIG. 3.

Sur la partie gauche de la figure 4, on a représenté le signal de sortie du registre 5 lors de la lecture d'une ligne N. Ce signal de sortie est constitué par la superposition d'une charge d'entraînement constante QE et d'une charge-signal en escalier Qs.On the left-hand side of FIG. 4, the output signal from register 5 is shown when reading a line N. This output signal consists of the superimposition of a constant drive load Q E and d 'a signal load in steps Q s .

Sur la partie droite de la figure 4, on a représenté le signal résiduel Qr, ayant le même profil que Qs qui est présent dans le registre 5, lors de la lecture suivante qui peut être la lecture de la ligne N + 1 par exemple.On the right-hand side of FIG. 4, the residual signal Q r is shown , having the same profile as Q s which is present in the register 5, during the next reading which can be the reading of the line N + 1 by example.

Selon l'invention, on injecte dans le registre 5 une charge d'entraînement Q E qui vise à compenser le signal Q,. La charge d'entraînement QE de la figure 4, partie droite, n'est donc pas constante mais présente un profil inverse à celui de Q,.According to the invention, a drive load Q E is injected into the register 5 which aims to compensate for the signal Q i. The training load Q E in FIG. 4, on the right, is therefore not constant but has a profile opposite to that of Q ,.

Dans l'exemple de la figure 4, à droite, où la charge-signal Qε de la ligne N + est nulle, on obtient en sortie du registre 5 une charge sensiblement constante Q égale à la somme de la charge résiduelle Q , et de la charge d'entraînement QE ayant subi une contre-réaction.In the example of FIG. 4, on the right, where the signal charge Qε of the line N + is zero, there is obtained at the output of register 5 a substantially constant charge Q equal to the sum of the residual charge Q, and of the training load Q E having undergone a feedback.

La modulation de la charge d'entraînement qui est réalisée modifie sa valeur de façon inversement proportionnelle à celle du signal de lecture de la ligne qui est lue et en fonction de l'inefficacité de transfert du dispositif.The modulation of the training load which is carried out modifies its value inversely proportional to that of the read signal of the line which is read and as a function of the transfer ineffectiveness of the device.

Cette modulation de la charge d'entraînement est réalisée pour chaque valeur de la charge d'entraînement qui est entrée dans un étage du registre 5.This modulation of the training load is carried out for each value of the training load which is entered in a stage of register 5.

Sur la figure 5a, on a représenté de façon détaillée un mode de réalisation de l'étage d'injection 7.In FIG. 5a, an embodiment of the injection stage 7 is shown in detail.

Cet étage d'injection 7 est constitué par une diode 8 suivie par deux grilles 9 et 10 qui conduisent au registre à décalage 5.This injection stage 7 consists of a diode 8 followed by two grids 9 and 10 which lead to the shift register 5.

Dans le mode de réalisation de la figure 5a, le sens de transfert des charges, de la gauche vers la droite, dans l'étage d'injection et dans le registre est imposé par des implantations successivement de type N- et N dans un substrat semi-conducteur 11 de type P. Le transfert des charges s'effectue en volume.In the embodiment of FIG. 5a, the direction of charge transfer, from left to right, in the injection stage and in the register is imposed by successively implantations of type N- and N in a substrate semiconductor 11 of type P. The charge transfer takes place in volume.

On peut bien entendu fixer le sens de transfert des charges, par exemple, par des épaisseurs d'oxyde différentes ou par des potentiels différents sur les différentes électrodes.It is of course possible to fix the direction of charge transfer, for example, by different oxide thicknesses or by different potentials on the different electrodes.

Les charges sont injectées dans l'étage 7 selon le mode "fill and spill".The charges are injected into stage 7 according to the "fill and spill" mode.

La diode d'injection 8 est donc successivement portée à un niveau bas puis à un niveau haut, comme cela est illustré sur la figure 5b qui représente les potentiels de surface dans le substrat. Lorsque la diode est portée au niveau bas, il y a stockage de charges sous la grille 10 portée à un potentiel V constant.The injection diode 8 is therefore successively brought to a low level and then to a high level, as illustrated in FIG. 5b which represents the surface potentials in the substrate. When the diode is brought to the low level, there is storage of charges under the gate 10 brought to a constant potential V.

La grille 9 reçoit une tension VCR provenant du point milieu du potentiomètre 8 -voir figure 3 -et qui est proportionnelle au signal de sortie du registre 5.The gate 9 receives a voltage V CR coming from the midpoint of the potentiometer 8 - see FIG. 3 - and which is proportional to the output signal from the register 5.

Plus cette tension VCR est importante, plus la charge stockée sous la grille 10, et transmise ensuite dans le registre, est faible. Il y a donc bien une contre-réaction.The higher this voltage V CR , the lower the charge stored under the gate 10, and then transmitted in the register. So there is indeed a negative reaction.

Le mode "fill and spill" présente notamment les avantages suivants :

  • -la charge d'entraînement qui est ainsi injectée présente une fluctuation aléatoire minimale de son amplitude ;
  • -de plus, ce modé assure une insensibilité maximale aux parasites extérieurs.
The "fill and spill" mode has the following advantages in particular:
  • the training load which is thus injected has a minimum random fluctuation in its amplitude;
  • -moreover, this modé ensures a maximum insensitivity to external parasites.

Ces avantages sont dus au fait que la quantité de charge stockée dépend seulement de la différence des potentiels de surface sous les deux grilles 9 et 10, qui sont voisines et fortement couplées. Même si la diode d'injection 8 est soumise à des parasites, cela n'influe pas sur la quantité de charge injectée.These advantages are due to the fact that the quantity of charge stored depends only on the difference of the surface potentials under the two grids 9 and 10, which are neighboring and strongly coupled. Even if the injection diode 8 is subject to noise, this does not influence the amount of charge injected.

On peut bien sûr envisager diverses variantes à l'étage d'injection 7. Par exemple, on peut appliquer une tension constante sur la grille 9 et une tension variable sur la grille 10 de façon à moduler la valeur de la charge d'entraînement.It is of course possible to envisage various variants on the injection stage 7. For example, a constant voltage can be applied to the grid 9 and a variable voltage to the grid 10 so as to modulate the value of the training load.

L'invention présente un autre avantage qui est de linéariser la caractéristique de transfert représentant la quantité de charge lue Qs en sortie du registre 5 pour une ligne en fonction de la quantité de charge q sur les bus correspondant avant le transfert.The invention has another advantage which is to linearize the transfer characteristic representing the amount of charge read Q s at the output of register 5 for a line as a function of the amount of charge q on the corresponding buses before the transfer.

Cette caractéristique est représentée sur la figure 6 où l'on a également représenté en pointillés une caractéristique non linéaire.This characteristic is represented in FIG. 6 where a non-linear characteristic has also been shown in dotted lines.

Cette linéarisation est expliquée à l'aide de la figure 7 qui représente les évolutions du potentiel d'un bus P au cours d'une séquence de lecture.This linearization is explained using FIG. 7 which represents the changes in the potential of a bus P during a reading sequence.

Sur cette courbe, on a représenté le point A qui est le point de repos en l'absence de charges-signal. Ce point de repos résulte des itérations précédentes.On this curve, the point A is represented which is the point of rest in the absence of signal charges. This rest point results from previous iterations.

Lorsqu'un bus reçoit une charge d'entraînement QE, puis une charge-signal Qs, son potentiel passe en B, puis en B'.When a bus receives a training load Q E , then a signal load Q s , its potential goes to B, then to B '.

La lecture des charges ramène le potentiel du bus en un point A' différent du point A.Reading the charges brings the potential of the bus to a point A 'different from point A.

L'écart de potentiel entre A' et A est représentatif de l'inefficacité de transfert.The potential difference between A 'and A is representative of the transfer ineffectiveness.

Or cet écart de potentiel dépend de la position du point de départ donc de l'amplitude des charges-signal lues précédemment.However, this potential difference depends on the position of the starting point, therefore on the amplitude of the signal charges read previously.

L'écart entre A' et A n'introduit qu'un effet du second ordre si l'amplitude de la charge d'entraînement est correctement choisie.The difference between A 'and A only introduces a second order effect if the amplitude of the training load is correctly chosen.

Ainsi la plage des gris n'est pas dégradée si le dispositif est utilisé pour l'analyse d'image.Thus the gray range is not degraded if the device is used for image analysis.

Par contre dans des applications de photométrie, les erreurs systématiques de linéarité peuvent devenir non négligeables.On the other hand, in photometry applications, systematic errors of linearity can become significant.

La contre-réaction selon l'invention où la charge d'entraînement pour chaque bus est modulée en fonction de l'amplitude des signaux de la ligne précédemment lue, de façon à compenser la charge-signal résiduelle, permet de revenir sensiblement au même point A après l'apport de la charge d'entraînement, de la charge-signal et après la lecture des charges. Le point de repos sur la courbe se trouve stabilisé et la caractéristique de transfert est linéarisée.The feedback according to the invention where the drive load for each bus is modulated as a function of the amplitude of the signals of the previously read line, so as to compensate for the residual signal load, makes it possible to return to substantially the same point A after the training load, the signal load and after reading the loads. The rest point on the curve is stabilized and the transfer characteristic is linearized.

Claims (2)

1. Dispositif de lecture d'une matrice (1) de détecteurs photosensibles (d) par transfert de ligne, muni d'un étage (7) permettant l'injection en série d'une charge d'entraînement (Q E) à l'entrée d'un registre (5) assurant la lecture successivement de chaque ligne de détecteurs de la matrice, caractérisé en ce qu'il comporte des moyens (8) assurant une réaction d'une partie du signal vidéo d'une ligne de la matrice qui est lue sur l'étage d'injection (7), de façon à moduler la valeur de la charge d'entraînement (QE) s'ajoutant au signal vidéo de la ligne de la matrice qui sera lue ensuite, cette modulation étant inversement proportionnelle au signal vidéo de la ligne qui est lue et dépendant de l'inefficacité de transfert du dispositif.1. Device for reading a matrix (1) of photosensitive detectors (d) by line transfer, provided with a stage (7) allowing the serial injection of a training load (Q E ) at the input of a register (5) ensuring the successive reading of each line of detectors of the matrix, characterized in that it comprises means (8) ensuring a reaction of part of the video signal of a line of the matrix which is read on the injection stage (7), so as to modulate the value of the training load (Q E ) adding to the video signal of the line of the matrix which will be read next, this modulation being inversely proportional to the video signal of the line which is played and dependent on the transfer ineffectiveness of the device. 2. Dispositif selon la revendication 1, caractérisé en ce que l'étage d'injection (7) fonctionne sur le mode "fill and spill" et comporte : -une diode (8) portée successivement à un niveau bas et à un niveau haut ; - deux grilles (9 et 10), la première recevant une partie du signal vidéo issu du registre (5) et la deuxième reliée à une tension de polarisation constante (V). 2. Device according to claim 1, characterized in that the injection stage (7) operates on the "fill and spill" mode and comprises: a diode (8) brought successively to a low level and to a high level; - two gates (9 and 10), the first receiving part of the video signal from the register (5) and the second connected to a constant bias voltage (V).
EP86400810A 1985-04-19 1986-04-15 Line transfer read-out device with feed back Expired EP0200624B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8506009A FR2580883B1 (en) 1985-04-19 1985-04-19 LINE TRANSFER READING DEVICE WITH FEEDBACK
FR8506009 1985-04-19

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EP0200624A1 true EP0200624A1 (en) 1986-11-05
EP0200624B1 EP0200624B1 (en) 1989-08-02

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EP (1) EP0200624B1 (en)
JP (1) JPS61244180A (en)
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FR (1) FR2580883B1 (en)

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Publication number Priority date Publication date Assignee Title
FR2608315B1 (en) * 1986-12-16 1989-02-17 Thomson Csf ANTI-GLARE DEVICE FOR CHARGE TRANSFER IMAGE SENSOR AND IMAGE SENSOR COMPRISING SUCH A DEVICE
FR2625593B1 (en) * 1988-01-05 1990-05-04 Thomson Csf LOW NOISE READING METHOD AND CIRCUIT FOR LINE TRANSFER PHOTOSENSITIVE MATRIX
EP0563846A1 (en) * 1992-03-30 1993-10-06 Matsushita Electric Industrial Co., Ltd. Dynamic peaking aperture correction for use with a CCD camera

Citations (1)

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Publication number Priority date Publication date Assignee Title
EP0078038A1 (en) * 1981-10-22 1983-05-04 Matsushita Electric Industrial Co., Ltd. Method for driving solid-state image sensor

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US4158209A (en) * 1977-08-02 1979-06-12 Rca Corporation CCD comb filters
JPS57100361U (en) * 1980-12-12 1982-06-21
JPS58151180A (en) * 1982-03-03 1983-09-08 Hitachi Ltd Solid-state image pickup device
US4528596A (en) * 1982-11-30 1985-07-09 Rca Corporation Suppression of edge effects arising in CCD imager field registers
FR2553920B1 (en) * 1983-10-21 1985-12-13 Thomson Csf METHOD OF ANALYSIS OF A PHOTOSENSITIVE DEVICE WITH INTERLINED STRUCTURE AND DEVICE FOR IMPLEMENTING SAME
US4584609A (en) * 1985-04-15 1986-04-22 Rca Corporation Parallel-input/serial output CCD register with clocking noise cancellation, as for use in solid-state imagers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078038A1 (en) * 1981-10-22 1983-05-04 Matsushita Electric Industrial Co., Ltd. Method for driving solid-state image sensor

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DE3664856D1 (en) 1989-09-07
US4695890A (en) 1987-09-22
JPS61244180A (en) 1986-10-30
FR2580883B1 (en) 1987-05-22
FR2580883A1 (en) 1986-10-24
EP0200624B1 (en) 1989-08-02

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