EP0188938A1 - Layer acting as a barrier at the ion bombardment in vacuum tubes - Google Patents

Layer acting as a barrier at the ion bombardment in vacuum tubes Download PDF

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Publication number
EP0188938A1
EP0188938A1 EP85402478A EP85402478A EP0188938A1 EP 0188938 A1 EP0188938 A1 EP 0188938A1 EP 85402478 A EP85402478 A EP 85402478A EP 85402478 A EP85402478 A EP 85402478A EP 0188938 A1 EP0188938 A1 EP 0188938A1
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EP
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Prior art keywords
barrier layer
ion bombardment
tube
film
deposition
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EP85402478A
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German (de)
French (fr)
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EP0188938B1 (en
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Daniel Gally
Pierre-Paul Jobert
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Thales SA
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Thomson CSF SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/24—Dynodes having potential gradient along their surfaces
    • H01J43/246—Microchannel plates [MCP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18—Luminescent screens
    • H01J29/28—Luminescent screens with protective, conductive or reflective layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/84—Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection

Definitions

  • the present invention relates to an ion bombardment barrier layer for a vacuum tube.
  • the English patent 1,368,882 relates to a light image intensifier tube or IIL with a microchannel plate surmounted on the side of the photo-cathode of the tube by a barrier layer to ion bombardment.
  • a light image intensifier tube or IIL with a microchannel plate surmounted on the side of the photo-cathode of the tube by a barrier layer to ion bombardment.
  • Such a tube is shown diagrammatically in FIG. 1.
  • the reference 1 designates the glass slab which receives the light radiation symbolized by a wavy arrow.
  • the residual pressure in a vacuum tube is never zero regardless of the quality of cleaning and degassing of its constituent parts.
  • the electron bombardment ionizes the residual gases and the ions thus created, positively charged, go up the channels of the wafer towards the lowest potential and bombard the extraction layer 3 located on the surface of the photo-cathode.
  • This extraction layer which is very fragile and very thin, is very quickly destroyed by ion bombardment.
  • an ion bombardment layer 4 is used, placed on the micro-channel plate 5, on the side of the photo-cathode. This layer stops the ions but lets through the photoelectrons suitably accelerated by a sufficient potential.
  • the adhesion of the barrier layer to the microchannel wafer and the stress state of the barrier layer after annealing are not very satisfactory.
  • aluminum is a material easy to deposit and which does not present degassing when it is bombarded.
  • alumina AI 0
  • silicon oxide Si 0, or Si 0, or zinc sulfide ZnS None of these materials is fully satisfactory because the alumina presents a state of stress after annealing which is unsatisfactory, the silicon oxide Si O 2 or Si O degassed when bombarded and the zinc sulfide has a mass. atomic mean too high for photoelectrons to pass easily through it.
  • the present invention makes it possible to obtain an image intensifier tube whose lifespan is improved.
  • the present invention relates to an ion bombardment barrier layer for a vacuum tube, characterized in that it consists of a stable compound of nitrogen and silicon.
  • the vacuum tube in which the barrier layer against ion bombardment according to the invention is used may be, as explained above, a tube for intensifying light images or I.I.L.
  • This layer can also be used in other types of vacuum tubes, such as, for example, penetration screens.
  • this type of tube which is described for example in French patent application No. 76.19420 in the name of THOMSON-CSF, the barrier layer according to the invention is used to separate two layers of phosphors.
  • This barrier layer has in this use the advantage of having a minimum degassing when it is bombarded.
  • the improvement of the properties of the barrier layer made of a stable nitrogen and silicon compound is due to several factors. We know that when subjected to ion bombardment a body like silica degassed by desorption of water molecules and decomposition of hydroxyl radicals. The use of a non-oxygenated material makes it possible to reduce the extent of degassing. We observe at scanning electron microscope that when the annealing is carried out the barrier layer has a "pleated" appearance and has a state of minimum stress. Thus any impurity in the form of micro-dust or any other surface irregularity due to the preceding stages of the process does not create any tear in the film stretched over the orifices of the microchannel wafer.
  • a process of deposition by chemical reaction in vapor phase activated by plasma at low temperature is used which makes it possible to leave the microchannel wafers immobile and to reduce handling during the steps of depositing the protective material on the organic film and annealed.
  • the annealing can be done in situ while handling was required for passage through an oven in the case of sputtering or evaporation deposition.
  • FIG. 1 which schematically shows a light image intensifier tube or IIL has been described in the introduction to the description.
  • the ion bombardment barrier layer 4 consists of a stable nitrogen and silicon compound. It may be a compound of formula Si, N. for example, but non-stoichiometric formulas are also suitable as long as they give a stable compound.
  • This compound has a refractive index of between 1.6 and 2.2, and preferably between 1.8 and 1.9.
  • Silicon nitride Si, N4 has characteristics far superior to those of silica Si O 2 with regard to compactness.
  • Compactness is defined as the ratio of specific mass to average atomic mass.
  • the compactness of silicon nitride is 0.17 mol average of atom per cubic centimeter and that of silica is 0.11.
  • the average atomic mass of these two materials is identical. These two materials therefore have a permeability comparable to electrons with the same incident energy.
  • the barrier layer according to the invention When used in an IIL, it must have a thickness of approximately 30 to 300 Angstroms, and preferably from 50 to 80 Angstroms. For other applications, it is possible to use a layer of greater thickness, of the order of a few micrometers for example.
  • the barrier layer according to the invention is produced at a temperature between 70 and 200 ° C, and preferably between 120 and 150 ° C. It is necessary to find a compromise between the state of intrinsic stress in the material at a given temperature and the thermoplastic characteristics of organic thin film, placed on the micro-channel wafer.
  • barrier layers are used, such as for example sputtering or evaporation by Joule effect.
  • a deposition method which is also known from the prior art, and which is carried out by chemical reaction in vapor phase activated by plasma at low temperature.
  • the deposit is made in a cylindrical chamber, having two horizontal electrodes separated by a few centimeters.
  • the micro-channel wafers are placed on the lower electrode which is heated to a temperature such as those previously envisaged.
  • Plasma is created in a mixture of gases with chemical formulas Si H4, NH, and N ,. To decrease the deposition rate, it is possible to dilute silane Si H. in nitrogen N ,.
  • micro-channel slabs remain fixed during deposition.
  • annealing which makes it possible to remove the organic layer can be done in situ, either in air or in any suitable gas mixture.

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  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

La couche barrière selon l'invention est constituée d'un composé stable d'azote et de silicium. Elle est déposée par réaction chimique en phase vapeur activée par plasma à basse température. Application dans les tubes intensificateurs d'images lumineuse.The barrier layer according to the invention consists of a stable compound of nitrogen and silicon. It is deposited by chemical reaction in the vapor phase activated by plasma at low temperature. Application in light image intensifier tubes.

Description

La présente invention concerne une couche barrière au bombardement ionique pour tube à vide.The present invention relates to an ion bombardment barrier layer for a vacuum tube.

Il est connu d'utiliser de telles couches, notamment dans les tubes intensificateurs d'images lumineuses. 'It is known to use such layers, in particular in light image intensifier tubes. ''

Ainsi le brevet anglais 1.368.882 concerne un tube intensificateur d'images lumineuses ou IIL avec une galette de microcanaux surmontée du côté de la photo-cathode du tube par une couche barrière au bombardement ionique. Un tel tube est représenté schématiquement sur la figure 1.Thus, the English patent 1,368,882 relates to a light image intensifier tube or IIL with a microchannel plate surmounted on the side of the photo-cathode of the tube by a barrier layer to ion bombardment. Such a tube is shown diagrammatically in FIG. 1.

Sur cette figure, on désigne par la référence 1 la dalle de verre qui reçoit le rayonnement lumineux symbolisé par une flèche ondulée.In this figure, the reference 1 designates the glass slab which receives the light radiation symbolized by a wavy arrow.

A la suite de cette dalle de verre, on trouve une photocathode 2 qui est recouverte d'une couche 3 permettant l'extraction de photo-électrons. On trouve ensuite la couche barrière au bombardement ionique 4 qui est portée par la galette de micro-canaux 5, puis une couche métallique 6, une couche de luminophore 7 et une dalle de verre 8.Following this glass slab, there is a photocathode 2 which is covered with a layer 3 allowing the extraction of photo-electrons. Next, there is the ion bombardment barrier layer 4 which is carried by the micro-channel plate 5, then a metal layer 6, a phosphor layer 7 and a glass slab 8.

Le pression résiduelle dans un tube à vide n'est jamais nulle quelle que soit la qualité du nettoyage et du dégazage de ses pièces constitutives. Le bombardement électronique ionise les gaz résiduels et les ions ainsi créés, chargés positivement, remontent les canaux de la galette vers le potentiel le plus bas et bombardent la couche d'extraction 3 située à la surface de la photo-cathode. Cette couche d'extraction, qui est très fragile et très mince, est très rapidement détruite par le bombardement ionique.The residual pressure in a vacuum tube is never zero regardless of the quality of cleaning and degassing of its constituent parts. The electron bombardment ionizes the residual gases and the ions thus created, positively charged, go up the channels of the wafer towards the lowest potential and bombard the extraction layer 3 located on the surface of the photo-cathode. This extraction layer, which is very fragile and very thin, is very quickly destroyed by ion bombardment.

Pour éviter cette destruction, on utilise une couche barrière au bombardement ionique 4, posée sur la galette de micro-canaux 5, du côté de la photo-cathode. Cette couche arrête les ions mais laisse passer les photo--électrons convenablement accélérés par un potentiel suffisant.To avoid this destruction, an ion bombardment layer 4 is used, placed on the micro-channel plate 5, on the side of the photo-cathode. This layer stops the ions but lets through the photoelectrons suitably accelerated by a sufficient potential.

Dans le brevet anglais cité, le procédé utilisé pour déposer la couche barrière est le suivant :

  • - on réalise un film mince organique, à base de nitro--cellulose par exemple, en utilisant l'une des procédés de fabrication des écrans de tubes à rayons cathodiques :
  • - on dépose ce film sur la galette de micro-canaux ;
  • - on dépose une couche de matériau protecteur, de préférence une couche d'aluminium, sur le film organique posé sur la galette de micro-canaux ;
  • - on effectue un recuit à l'air pour assurer la combustion du film organique et la mise en contact de la couche de matériau protecteur avec la galette de micro-canaux.
In the cited English patent, the process used to deposit the barrier layer is as follows:
  • an organic thin film is produced, based on nitro-cellulose for example, using one of the methods of manufacturing cathode ray tube screens:
  • - this film is deposited on the micro-channel cake;
  • - A layer of protective material, preferably an aluminum layer, is deposited on the organic film placed on the micro-channel pad;
  • - An air annealing is carried out to ensure the combustion of the organic film and the contacting of the layer of protective material with the micro-channel wafer.

Lorsqu'on utilise une couche barrière en aluminium, l'adhérence de la couche barrière sur la galette de micro--canaux et l'état de contrainte de la couche barrière après le recuit ne sont pas très satisfaisants.When using an aluminum barrier layer, the adhesion of the barrier layer to the microchannel wafer and the stress state of the barrier layer after annealing are not very satisfactory.

Par contre l'aluminium est un matériau facile à déposer et qui ne présente pas de dégazage lorsqu'il est bombardé.On the other hand aluminum is a material easy to deposit and which does not present degassing when it is bombarded.

Pour réaliser cette couche barrière, il est connu d'utiliser d'autres matériaux tels que l'alumine AI, 0,, un oxyde de silicium Si 0, ou Si 0, ou le sulfure de zinc ZnS. Aucun de ces matériaux ne donne pleinement satisfaction car l'alumine présente un état de contrainte après le recuit qui est peu satisfaisant, l'oxyde de silicium Si O2 ou Si O dégaze lorsqu'il est bombardé et le sulfure de zinc a une masse atomique moyenne trop élevée pour que les photo- .électrons puissent le traverser aisément.To make this barrier layer, it is known to use other materials such as alumina AI, 0 ,, a silicon oxide Si 0, or Si 0, or zinc sulfide ZnS. None of these materials is fully satisfactory because the alumina presents a state of stress after annealing which is unsatisfactory, the silicon oxide Si O 2 or Si O degassed when bombarded and the zinc sulfide has a mass. atomic mean too high for photoelectrons to pass easily through it.

Dans l'art antérieur, les couches barrières au bombardement ionique sont déposées par les techniques bien connues de pulvérisation cathodique ou d'évaporation par effet Joule. Ces techniques présentent notamment les inconvénients suivants :

  • - le film organique peut être détérioré;
  • - il faut nécessairement des pièces en rotation et une régulation sophistiquée pour réaliser de façon reproductible des films très minces;
  • - enfin le chauffage lors des différents dépôts est difficile à réaliser.
In the prior art, the barrier layers to ion bombardment are deposited by the well known techniques of sputtering or evaporation by Joule effect. These techniques have the following disadvantages in particular:
  • - the organic film can be damaged;
  • - rotating parts and sophisticated regulation are necessarily required to reproduce very thin films in a reproducible manner;
  • - Finally, heating during different deposits is difficult to achieve.

La présente invention concerne une couche barrière qui présente des propriétés plus satisfaisantes que les couches barrières de l'art antérieur notamment sur les points suivants :

  • - l'adhérence sur la galette de micro-canaux;
  • - l'absence de dégazage sous bombardement ionique;
  • la masse atomique moyenne minimum pour que les photo--électrons la traversent aisément;
  • - l'absence de défauts tels que des trous ou des déchirures provenant d'une part du recuit et de l'état de constrainte qu'il crée et d'autre part des manipulations nécessaires par exemple pour implanter la galette de micro-canaux dans l'IIL.
The present invention relates to a barrier layer which has more satisfactory properties than the barrier layers of the prior art, in particular in the following points:
  • - the adhesion to the micro-channel wafer;
  • - the absence of degassing under ion bombardment;
  • the minimum average atomic mass for photoelectrons to easily pass through;
  • - the absence of faults such as holes or tears originating on the one hand from the annealing and from the state of constraint which it creates and on the other hand from the manipulations necessary for example to implant the microchannel pancake in the IIL.

Du fait de l'amélioration des propriétés de la couche barrière, la présente invention permet d'obtenir un tube intensificateur d'images dont la durée de vie est améliorée.Due to the improvement of the properties of the barrier layer, the present invention makes it possible to obtain an image intensifier tube whose lifespan is improved.

La présente invention concerne une couche barrière au bombardement ionique pour tube à vide, caractérisée en ce qu'elle est constituée d'un composé stable d'azote et de silicium.The present invention relates to an ion bombardment barrier layer for a vacuum tube, characterized in that it consists of a stable compound of nitrogen and silicon.

Le tube à vide dans lequel est utilisée la couche barrière au bombardement ionique selon l'invention peut être, comme cela a été exposé précédemment, un tube intensificateur d'images lumineuses ou I.I.L.The vacuum tube in which the barrier layer against ion bombardment according to the invention is used may be, as explained above, a tube for intensifying light images or I.I.L.

Cette couche peut aussi être utilisée dans d'autres types de tubes à vide, comme par exemple les écrans à pénétration. Dans ce type de tubes, qui est décrit par exemple dans la demande de brevet français n° 76.19420 au nom de THOMSON-CSF, la couche barrière selon l'invention est utilisée pour séparer deux couches de luminophores. Cette couche barrière présente dans cette utilisation l'avantage d'avoir un dégazage minimum lorsqu'elle est bombardée.This layer can also be used in other types of vacuum tubes, such as, for example, penetration screens. In this type of tube, which is described for example in French patent application No. 76.19420 in the name of THOMSON-CSF, the barrier layer according to the invention is used to separate two layers of phosphors. This barrier layer has in this use the advantage of having a minimum degassing when it is bombarded.

L'amélioration des propriétés de la couche barrière constituée d'un composé stable d'azote et de silicium tient à plusieurs facteurs. On sait que lorsqu'il est soumis au bombardement ionique un corps comme la silice dégaze par désorption de molécules d'eau et décomposition des radicaux hydroxyles. L'utilisation d'un matériau non oxygéné permet de réduire l'ampleur de dégazage. On observe au microscope électronique à balayage que lorsqu'on effectue le recuit la couche barrière a un aspect "plissé" et présente un état de contrainte minimum. Ainsi toute impureté sous forme de micro-poussière ou toute autre irrégularité de surface due aux étapes précédentes du procédé ne crée aucune déchirure dans le film tendu au--dessus des orifices de la galette de micro-canaux.The improvement of the properties of the barrier layer made of a stable nitrogen and silicon compound is due to several factors. We know that when subjected to ion bombardment a body like silica degassed by desorption of water molecules and decomposition of hydroxyl radicals. The use of a non-oxygenated material makes it possible to reduce the extent of degassing. We observe at scanning electron microscope that when the annealing is carried out the barrier layer has a "pleated" appearance and has a state of minimum stress. Thus any impurity in the form of micro-dust or any other surface irregularity due to the preceding stages of the process does not create any tear in the film stretched over the orifices of the microchannel wafer.

Au contraire, lorsqu'une couche barrière en silice Si O2 est utilisée, on observe qu'on obtient un film tendu après le recuit ce qui entraîne un état de contrainte important.On the contrary, when a barrier layer of silica Si O 2 is used, it is observed that a stretched film is obtained after annealing, which results in a significant state of stress.

Enfin, on utilise un procédé de dépôt par réaction chimique en phase vapeur activée par plasma à basse température qui permet de laisser immobiles les galettes de micro-canaux et de réduire les manipulations lors des étapes de dépôt du matériau protecteur sur le film organique et de recuit. Ainsi le recuit peut se faire in situ alors qu'il fallait une manipulation pour le passage en étuve dans le cas de dépôt par pulvérisation cathodique ou par évaporation.Finally, a process of deposition by chemical reaction in vapor phase activated by plasma at low temperature is used which makes it possible to leave the microchannel wafers immobile and to reduce handling during the steps of depositing the protective material on the organic film and annealed. Thus the annealing can be done in situ while handling was required for passage through an oven in the case of sputtering or evaporation deposition.

D'autres objets, caractéristiques et résultats de l'invention ressortiront de la description suivante donnée à titre d'exemple non limitatif et illustrée par la figure annexée qui représente le schéma d'un tube intensificateur d'images lumineuses.Other objects, characteristics and results of the invention will emerge from the following description given by way of nonlimiting example and illustrated by the appended figure which represents the diagram of a light image intensifier tube.

Sur la figure annexée, pour des raisons de clarté, les cotes et proportions des divers éléments ne sont pas respectées.In the attached figure, for reasons of clarity, the dimensions and proportions of the various elements are not observed.

La figure 1 qui représente de façon schématique un tube intensificateur d'image lumineuse ou IIL a été décrite dans l'introduction à la description.Figure 1 which schematically shows a light image intensifier tube or IIL has been described in the introduction to the description.

Selon l'invention, la couche barrière au bombardement ionique 4 est constituée d'un composé stable d'azote et de silicium. Il peut s'agir d'un composé de formule Si, N. par exemple, mais les formules non stoechiométiques conviennent aussi dès lors qu'elles donnent un composé stable.According to the invention, the ion bombardment barrier layer 4 consists of a stable nitrogen and silicon compound. It may be a compound of formula Si, N. for example, but non-stoichiometric formulas are also suitable as long as they give a stable compound.

Ce composé a un indice de réfraction compris entre 1,6 et 2,2, et préférentiellement entre 1,8 et 1,9.This compound has a refractive index of between 1.6 and 2.2, and preferably between 1.8 and 1.9.

Le nitrure de silicium Si, N4 présente des caractéristiques bien supérieures à celles de la silice Si O2 en ce qui concerne la compacité. La compacité est définie comme le rapport de la masse spécifique à la masse atomique moyenne. La compacité du nitrure de silicium est de 0,17 moles moyennes d'atome par centimètre cube et celle de la silice est de 0,11.Silicon nitride Si, N4 has characteristics far superior to those of silica Si O 2 with regard to compactness. Compactness is defined as the ratio of specific mass to average atomic mass. The compactness of silicon nitride is 0.17 mol average of atom per cubic centimeter and that of silica is 0.11.

La masse atomique moyenne de ces deux matériaux est identique. Ces deux matériaux présentent donc une perméabilité comparable aux électrons de même énergie incidente.The average atomic mass of these two materials is identical. These two materials therefore have a permeability comparable to electrons with the same incident energy.

Lorsque la couche barrière selon l'invention est utilisée dans un IIL, elle doit présenter une épaisseur de 30 à 300 Angstrôms environ, et préférentiellement de 50 à 80 Angstrôms. Pour d'autres applications, on peut utiliser une couche de plus grande épaisseur, de l'ordre de quelques micromètres par exemple.When the barrier layer according to the invention is used in an IIL, it must have a thickness of approximately 30 to 300 Angstroms, and preferably from 50 to 80 Angstroms. For other applications, it is possible to use a layer of greater thickness, of the order of a few micrometers for example.

La couche barrière selon l'invention est réalisée à une température comprise entre 70 et 200°C, et de préférence entre 120 et 150°C. II faut trouver un compromis entre l'état de contrainte intrinsèque au matériau à température donnée et les caractéristiques thermoplastiques de film mince organique, posé sur la galette de micro-canaux.The barrier layer according to the invention is produced at a temperature between 70 and 200 ° C, and preferably between 120 and 150 ° C. It is necessary to find a compromise between the state of intrinsic stress in the material at a given temperature and the thermoplastic characteristics of organic thin film, placed on the micro-channel wafer.

On a vu précédemment que dans l'art antérieur, on utilise des méthodes du dépôt des couches barrières, telles que par exemple la pulvérisation cathodique ou l'évaporation par effet Joule.We have seen above that in the prior art, methods of depositing barrier layers are used, such as for example sputtering or evaporation by Joule effect.

Ces méthodes concernent uniquement le dépôt de la couche barrière. Elles sont mises en oeuvre pour déposer la couche barrière sur le film mince organique déposé sur la galette de micro-canaux et elles sont suivies par le recuit à l'air, comme cela a été exposé précédemment.These methods relate only to the deposition of the barrier layer. They are used to deposit the barrier layer on the organic thin film deposited on the microchannel wafer and they are followed by air annealing, as has been explained above.

Selon l'invention, on utilise de préférence une méthode de dépôt qui est également connue de l'art antérieur, et qui est réalisée par réaction chimique en phase vapeur activée par plasma à basse température.According to the invention, use is preferably made of a deposition method which is also known from the prior art, and which is carried out by chemical reaction in vapor phase activated by plasma at low temperature.

Le dépôt se fait dans une chambre cylindrique, présentant deux électrodes horizontales séparées de quelques centimètres. On pose les galettes de micro-canaux sur l'électrode inférieure qui est chauffée à une température telle que celles envisagées précédemment. La plasma est créé dans un mélange de gaz de formules chimiques Si H4, NH, et N,. Pour diminuer la vitesse de dépôt, on peut diluer du silane Si H. dans de l'azote N,.The deposit is made in a cylindrical chamber, having two horizontal electrodes separated by a few centimeters. The micro-channel wafers are placed on the lower electrode which is heated to a temperature such as those previously envisaged. Plasma is created in a mixture of gases with chemical formulas Si H4, NH, and N ,. To decrease the deposition rate, it is possible to dilute silane Si H. in nitrogen N ,.

Les galettes de micro-canaux restent fixes lors du dépôt. De plus, le recuit qui permet d'éliminer la couche organique peut être fait in situ, soit à l'air, soit dans tout mélange de gaz convenable.The micro-channel slabs remain fixed during deposition. In addition, the annealing which makes it possible to remove the organic layer can be done in situ, either in air or in any suitable gas mixture.

Claims (9)

1. Couche barrière (4) au bombardement ionique pour tube à vide, caractérisée en ce qu'elle est constituée d'un composé stable d'azote et de silicium.1. Ion bombardment barrier layer (4) for vacuum tube, characterized in that it consists of a stable compound of nitrogen and silicon. 2. Couche barrière selon la revendication 1, caractérisée en ce qu'elle est constituée de nitrure de silicium Si3 N4.2. Barrier layer according to claim 1, characterized in that it consists of silicon nitride Si 3 N 4 . 3. Couche barrière selon l'une des revendications 1 ou 2, caracterisée en ce que l'indice de réfraction du matériau qui la constitue est compris entre 1,6 et 2,2.3. Barrier layer according to one of claims 1 or 2, characterized in that the refractive index of the material which constitutes it is between 1.6 and 2.2. 4. Couche barrière selon l'une des revendications 1 ou 2, caractérisée en ce que l'indice de réfraction du matériau qui la constitue est compris entre 1,8 et 1,9.4. Barrier layer according to one of claims 1 or 2, characterized in that the refractive index of the material which constitutes it is between 1.8 and 1.9. 5. Couche barrière selon l'une des revendications 1 à 4, caractérisée en ce qu'elle est utilisée dans un tube intensificateur d'images lumineuses, et elle est positionnée sur la galette de micro-canaux de tube, de côté de la photo--cathode, et en ce que l'épaisseur de cette couche barrière varie de 30 Angstrôms à 300 Angstrôms.5. Barrier layer according to one of claims 1 to 4, characterized in that it is used in a light image intensifier tube, and it is positioned on the wafer of tube microchannels, side of the photo - cathode, and in that the thickness of this barrier layer varies from 30 Angstroms to 300 Angstroms. 6. Couche barrière selon la revendication 5, caractérisée en ce que son épaisseur varie de 50 à 80 Angstrôms.6. Barrier layer according to claim 5, characterized in that its thickness varies from 50 to 80 Angstroms. 7. Procédé de fabrication d'une couche barrière au bombardement ionique pour tube à vide consistant : - à réaliser un film mince organique ; - à déposer ce film sur un élément du tube ; - à déposer une couche barrière sur le film mince organique ; - à effectuer un recuit à l'air pour assurer la combustion du film organique ;
caractérisé en ce que : - le dépôt de la couche barrière (4) est réalisé par réaction chimique en phase vapeur activée par plasma a basse température ; - la couche barrière est constituée d'un composé stable d'azote et de silicium. 7. Method for manufacturing an ion bombardment barrier layer for a vacuum tube consisting of: - to produce an organic thin film; - depositing this film on an element of the tube; - depositing a barrier layer on the organic thin film; - to carry out an annealing in air to ensure the combustion of the organic film;
characterized in that: - the deposition of the barrier layer (4) is carried out by chemical reaction in vapor phase activated by low plasma temperature ; - The barrier layer consists of a stable compound of nitrogen and silicon. 8. Procédé selon la revendication 7, caractérisé en ce que le dépôt par réaction chimique en phase vapeur activée par plasma s'effectue à une température comprise entre 70 et 200°C.8. Method according to claim 7, characterized in that the deposition by plasma vapor activated chemical reaction takes place at a temperature between 70 and 200 ° C. 9. Procédé selon la revendication 8, caractérisé en ce que le dépôt s'effectue à une température comprise entre 120 et 150°C.9. Method according to claim 8, characterized in that the deposition takes place at a temperature between 120 and 150 ° C.
EP85402478A 1984-12-18 1985-12-12 Layer acting as a barrier at the ion bombardment in vacuum tubes Expired EP0188938B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8419362A FR2580864B1 (en) 1984-12-18 1984-12-18 ION BOMBING BARRIER LAYER FOR VACUUM TUBE
FR8419362 1984-12-18

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EP0188938A1 true EP0188938A1 (en) 1986-07-30
EP0188938B1 EP0188938B1 (en) 1989-07-12

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EP (1) EP0188938B1 (en)
DE (1) DE3571530D1 (en)
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US6396049B1 (en) * 2000-01-31 2002-05-28 Northrop Grumman Corporation Microchannel plate having an enhanced coating
JP6817160B2 (en) * 2017-06-30 2021-01-20 浜松ホトニクス株式会社 Electronic polyploid

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DE3571530D1 (en) 1989-08-17
FR2580864A1 (en) 1986-10-24
EP0188938B1 (en) 1989-07-12
US4931693A (en) 1990-06-05
FR2580864B1 (en) 1987-05-22

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