EP0106396B1 - Multiplicateur d'électrons à galette de microcanaux et application dudit multiplicateur aux dispositifs détecteurs de radiations ou particules - Google Patents
Multiplicateur d'électrons à galette de microcanaux et application dudit multiplicateur aux dispositifs détecteurs de radiations ou particules Download PDFInfo
- Publication number
- EP0106396B1 EP0106396B1 EP83201389A EP83201389A EP0106396B1 EP 0106396 B1 EP0106396 B1 EP 0106396B1 EP 83201389 A EP83201389 A EP 83201389A EP 83201389 A EP83201389 A EP 83201389A EP 0106396 B1 EP0106396 B1 EP 0106396B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- multiplier
- wafer
- face
- plate
- metallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002245 particle Substances 0.000 title claims description 7
- 230000005855 radiation Effects 0.000 title claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 238000001465 metallisation Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 235000012771 pancakes Nutrition 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000863 Ferronickel Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012799 electrically-conductive coating Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
- H01J31/507—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect using a large number of channels, e.g. microchannel plates
Definitions
- the present invention relates to an electron multiplier with microchannel wafer and the application of said multiplier to radiation or particle detection devices.
- Such a tube generally comprises inside a vacuum-tight enclosure closed by means of windows transparent to light and parallel to these windows a photocathode, a microchannel plate and a fluorescent screen, suitable electrical potentials being applied to these different electrodes, the focusing of the image being of the proximity type.
- One problem to be solved concerns the uniformity of the inter-electrode distance so that the spatial resolution of the amplified image is itself uniform in the field.
- the electrical potentials are generally applied to each face of the wafer with the aid of annular metal parts bearing on the periphery of the wafer and forming a spring.
- the use of such springs has the disadvantage that the pressure they exert on the wafer is difficult to dose so that it often results during assembly, for the wafer, scratches in the glass at the point of contact with metal or the risk of tears or breakage with the consequence of the appearance of electrical ignition points.
- this kind of contact prohibits the use of any device in which the wafer would be integrated and which should operate in the presence of severe vibrations. Following these vibrations there would be sliding of the wafer on its contacts with abrasion of metallizations and glass with the same consequences as those mentioned above.
- the inter-electrode distance would have to vary over time as well as the spatial resolution.
- a scan conversion tube having a target electrode holder Such a tube is known from US Pat. No. 3,254,250 and comprises an envelope having a tubular part, a plane-type electrode positioned inside the tubular part and perpendicular to the axis of the tubular part.
- the electrode is held in the tubular part by means of an annular part made of insulating material, for example ceramic.
- annular part made of insulating material, for example ceramic.
- conductive pads electrically fixed to the support extend through the tubular part and in depressions made in the annular part to support the latter and the electrode inside the envelope.
- An electrically conductive coating is provided on the annular part and is in contact with the electrode, and at least one of the studs of the support to make electrical contact with the exterior of the envelope.
- One of the aims of the invention is to provide a solution to the problems mentioned above during the use and implementation of a microchannel pancake.
- one of the aims of the invention is to extend the use of microchannel pancakes to those of large diameter, for example of the order of 4 to 6 cm, by giving them the flatness necessary for obtaining a great uniformity of spatial resolution and also to provide that they can operate in the presence of severe vibrations of the devices in which they are incorporated.
- Another object of the invention is to facilitate the use of microchannel pancakes.
- the user generally finds himself, after having obtained a microchannel cake, confronted with the difficulties of its implementation and of its mounting in the device where it is to be incorporated.
- the wafer is provided to the user, integral with the means facilitating during its incorporation in said device its fixing and the application of electrical potentials on its faces, these means being such that they allow the user of the cake in the presence of vibrations.
- an electron multiplier of the kind comprising a microchannel wafer with electronic secondary emission and means for applying electrical potentials to each of the faces of said wafer, is remarkable in that said wafer of microchannels is sealed to a metal frame surrounding said wafer, said metal frame consisting of two circular parts in the form of rings pla created on either side of the wafer, and fixed one on the other according to a flat surface parallel to the wafer, said pieces enclosing by their internal edges the wafer of microchannels along its periphery, the metallization on one faces having a diameter greater than that of the internal edge of these parts in order to make contact with the metal frame, the metallization on the other face having a diameter less than that of the internal edge of these parts and being on its periphery provided with lugs entering inside of notches made in the part of the metal frame situated on the side of said other face, metallic contact pads being placed on the frame in the vicinity of these lugs, metallic wires electrically connecting said contact pads with said paws.
- the invention extends to the incorporation of this multiplier into a radiation or particle detector device remarkable in that the device comprises a cylindrical insulating body crossed laterally for supplying electrical potential to the wafer faces by rods.
- the device comprises a cylindrical insulating body crossed laterally for supplying electrical potential to the wafer faces by rods.
- metal these rods being distributed regularly around the cylinder substantially along a section plane, some of these rods being rigidly welded to said metal frame around its periphery, the others being connected by welding to a conductor itself connected by welding to one of the studs metallic.
- This electron multiplier consists of the microchannel wafer with electronic secondary emission 12 provided on the inlet side of the radiation or particles of metallization 13 on the outlet side of the metallization 14.
- This wafer is for example circular.
- the circle 31 represents the external contour of the wafer and at the same time, although this is not required by the invention, the external contour of the metallization 13 of the entry face of the wafer.
- the circle 32 represents the outer limit of the metallization 14 of the wafer outlet. In addition, the legs such as 15 which will be discussed later.
- the metal parts constituting the metal frame are the circular parts 16 and 17.
- the circles which limit the part 16 are the circles 33 and 34.
- the circles which limit the part 17 are the circles 34 and 35. These parts are applied to each other according to their flat part 18.
- the parts 16 and 17 are kept in contact using a number of screws such as 2.
- the part 16 has on its internal peripheral edge an L-shaped notch 20 in which the wafer 12 is placed.
- parts 16 and 17 exist grooves, respectively 21 and 22 where is placed the solder joint, for example an indium seal.
- the surfaces to be sealed Prior to welding, the surfaces to be sealed are covered with conventional metallic sub-layers (Ni Cr, Ni, Au) for bonding and wetting.
- the diameter of the circle 31 of the metallization 13 of the entry face of the wafer being greater than that of the circle 34, the part 16 is found to be directly in contact with this metallization.
- This part 16 has a circular bracket 23 on which a rigid contact can be made as explained later.
- the contact on the wafer outlet metallization 14 is carried out using lugs such as 15 which is placed in the notch 24 (part not hatched in FIG. 1) made in part 17.
- This indentation allows to connect in an electrically isolated manner the tab such as 15 to a relay pad 25 fixed on the part 17 and isolated from it.
- This block advantageously consists of a block of insulating glass 26 surmounted by a metal block 27 fixed to the part 17 for example by thermocompression after interposition of a metal strip such as aluminum, between, on the one hand, the part 17 and the block 26, namely the band 28, and, on the other hand, the block 26 and the block 27, namely the band 29.
- the electrical connection between lug such as 15 and stud such as 25 takes place advantageously using one or more metallic wires of small cross section such as 30, for example gold wires of diameter 30 ⁇ m, fixed for example parthermocompression, on the one hand on the tab 15 and on the other hand part on the metal block 27.
- the part 16 has the notch 36 (part not shaded in Figure 1). This indentation makes it possible to extend the electrical connection with the wafer outlet metallization towards the outside of the multiplier without the risk of a short circuit with the inlet metallization.
- the extension is carried out using the conductor such as 10.
- the material of parts 16 and 17 is chosen from those whose coefficient of linear expansion is close to that of wafer glass so that during the welding operation and subsequent heat treatments, the cake does not deform.
- the material used during tests was for example an alloy of ferronickel with an iron and nickel percentage by weight 52 and 48 respectively. It goes without saying that other materials can be used. In order to dissipate any mechanical tension in the metal, it underwent, before its use, annealing for several hours (800 ° C.) in a reducing atmosphere and then very slow cooling.
- FIGS. 1 and 2 show the integration of such a multiplier inside the photoelectric tube of the image intensifier type.
- the entry window is represented under the reference 41.
- the photocathode is deposited on the face 42.
- the exit window for example in the form of optical fibers, carries the reference 43.
- the screen is deposited on face 44 of this exit window.
- the tube body in the form of a truncated cylinder, the material constituting this body being insulating glass or ceramic for example. In FIG. 2, this tube body appears in circles 46 and 47.
- the multiplier described above and incorporated in this tube is rigidly fixed in this tube via the tube body 45.
- This rigid fixing is carried out by means a number of metal rods such as 48 normally welded to the circular square 23 and distributed around the periphery of the tube body.
- these rods are three in number, namely 48, 49, 50. These rods normally pass through the body of the tube and are welded to it. They allow the adequate electrical potential to be applied from the outside to the wafer entry face.
- this multiplier can be integrated into any other radiation or particle detector device, its fixing in this device being effected in the same way in the body thereof.
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Electron Tubes For Measurement (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8216551A FR2534067A1 (fr) | 1982-10-01 | 1982-10-01 | Multiplicateur d'electrons a galette de microcanaux et application dudit multiplicateur aux dispositifs detecteurs de radiations ou particules |
FR8216551 | 1982-10-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0106396A1 EP0106396A1 (fr) | 1984-04-25 |
EP0106396B1 true EP0106396B1 (fr) | 1988-12-07 |
Family
ID=9277916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP83201389A Expired EP0106396B1 (fr) | 1982-10-01 | 1983-09-29 | Multiplicateur d'électrons à galette de microcanaux et application dudit multiplicateur aux dispositifs détecteurs de radiations ou particules |
Country Status (5)
Country | Link |
---|---|
US (1) | US4672193A (enrdf_load_stackoverflow) |
EP (1) | EP0106396B1 (enrdf_load_stackoverflow) |
JP (1) | JPS59196541A (enrdf_load_stackoverflow) |
DE (1) | DE3378667D1 (enrdf_load_stackoverflow) |
FR (1) | FR2534067A1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8625529D0 (en) * | 1986-10-24 | 1986-11-26 | Griffiths I W | Control/analysis of charged particles |
GB2202367A (en) * | 1987-03-18 | 1988-09-21 | Philips Electronic Associated | Channel plate electron multipliers |
US4948965A (en) * | 1989-02-13 | 1990-08-14 | Galileo Electro-Optics Corporation | Conductively cooled microchannel plates |
US5581151A (en) * | 1993-07-30 | 1996-12-03 | Litton Systems, Inc. | Photomultiplier apparatus having a multi-layer unitary ceramic housing |
US5391874A (en) * | 1993-08-17 | 1995-02-21 | Galileo Electro-Optics Corporation | Flexible lead assembly for microchannel plate-based detector |
US5693946A (en) * | 1996-06-11 | 1997-12-02 | Trustees Of Boston University | Single photon imaging with a Bi-Linear charge-coupled device array |
US5770858A (en) * | 1997-02-28 | 1998-06-23 | Galileo Corporation | Microchannel plate-based detector for time-of-flight mass spectrometer |
US7498557B2 (en) | 2005-09-08 | 2009-03-03 | Applied Materials Israel Ltd. | Cascaded image intensifier |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3346756A (en) * | 1965-04-13 | 1967-10-10 | Robert J Doyle | Electrode support for an optical fiber disc |
FR2341940A1 (fr) * | 1976-02-23 | 1977-09-16 | Labo Electronique Physique | Tube photoelectrique comportant une galette de microcanaux a emission electronique secondaire et procede pour realiser un tel tube |
US4100445A (en) * | 1976-03-15 | 1978-07-11 | The Machlett Laboratories, Inc. | Image output screen comprising juxtaposed doped alkali-halide crystalline rods |
FR2344958A1 (fr) * | 1976-03-16 | 1977-10-14 | Commissariat Energie Atomique | Tube photoelectrique obturateur a galette de microcanaux incorporee dans une ligne a propagation d'ondes integree dans ledit tube |
US4295073A (en) * | 1978-03-28 | 1981-10-13 | The United States Of America As Represented By The Secretary Of The Army | Microchannel plate-in-wall structure |
JPS57198858U (enrdf_load_stackoverflow) * | 1981-06-12 | 1982-12-17 |
-
1982
- 1982-10-01 FR FR8216551A patent/FR2534067A1/fr active Granted
-
1983
- 1983-09-29 DE DE8383201389T patent/DE3378667D1/de not_active Expired
- 1983-09-29 EP EP83201389A patent/EP0106396B1/fr not_active Expired
- 1983-10-01 JP JP58181839A patent/JPS59196541A/ja active Granted
-
1985
- 1985-11-25 US US06/851,891 patent/US4672193A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4672193A (en) | 1987-06-09 |
JPS59196541A (ja) | 1984-11-07 |
DE3378667D1 (en) | 1989-01-12 |
FR2534067B1 (enrdf_load_stackoverflow) | 1985-02-15 |
EP0106396A1 (fr) | 1984-04-25 |
JPH0471301B2 (enrdf_load_stackoverflow) | 1992-11-13 |
FR2534067A1 (fr) | 1984-04-06 |
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