EP0102178A3 - Semiconductor memory device - Google Patents

Semiconductor memory device Download PDF

Info

Publication number
EP0102178A3
EP0102178A3 EP83304220A EP83304220A EP0102178A3 EP 0102178 A3 EP0102178 A3 EP 0102178A3 EP 83304220 A EP83304220 A EP 83304220A EP 83304220 A EP83304220 A EP 83304220A EP 0102178 A3 EP0102178 A3 EP 0102178A3
Authority
EP
European Patent Office
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP83304220A
Other versions
EP0102178A2 (en
EP0102178B1 (en
Inventor
Koji Sakui
Mitsugi Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of EP0102178A2 publication Critical patent/EP0102178A2/en
Publication of EP0102178A3 publication Critical patent/EP0102178A3/en
Application granted granted Critical
Publication of EP0102178B1 publication Critical patent/EP0102178B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/911—Light sensitive array adapted to be scanned by electron beam, e.g. vidicon device
EP83304220A 1982-07-28 1983-07-20 Semiconductor memory device Expired EP0102178B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP131567/82 1982-07-28
JP57131567A JPS5922358A (en) 1982-07-28 1982-07-28 Semiconductor storage device

Publications (3)

Publication Number Publication Date
EP0102178A2 EP0102178A2 (en) 1984-03-07
EP0102178A3 true EP0102178A3 (en) 1984-04-18
EP0102178B1 EP0102178B1 (en) 1987-10-14

Family

ID=15061076

Family Applications (1)

Application Number Title Priority Date Filing Date
EP83304220A Expired EP0102178B1 (en) 1982-07-28 1983-07-20 Semiconductor memory device

Country Status (4)

Country Link
US (1) US4763178A (en)
EP (1) EP0102178B1 (en)
JP (1) JPS5922358A (en)
DE (1) DE3374103D1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651183A (en) * 1984-06-28 1987-03-17 International Business Machines Corporation High density one device memory cell arrays
JPH0815206B2 (en) * 1986-01-30 1996-02-14 三菱電機株式会社 Semiconductor memory device
JPH0787219B2 (en) * 1986-09-09 1995-09-20 三菱電機株式会社 Semiconductor memory device
JPH0815208B2 (en) * 1987-07-01 1996-02-14 三菱電機株式会社 Semiconductor memory device
DE3807162A1 (en) * 1987-07-02 1989-01-12 Mitsubishi Electric Corp SEMICONDUCTOR MEMORY DEVICE
US5093702A (en) * 1988-11-28 1992-03-03 Nec Electronics, Inc. Method of alignment for semiconductor memory device
JP2974252B2 (en) * 1989-08-19 1999-11-10 富士通株式会社 Semiconductor storage device
JPH088316B2 (en) * 1990-01-31 1996-01-29 株式会社東芝 Ultraviolet erasable nonvolatile semiconductor memory device
JPH03278573A (en) * 1990-03-28 1991-12-10 Mitsubishi Electric Corp Semiconductor memory device
JP2979731B2 (en) * 1991-06-26 1999-11-15 日本電気株式会社 Semiconductor device
US5866928A (en) * 1996-07-16 1999-02-02 Micron Technology, Inc. Single digit line with cell contact interconnect
US5835401A (en) * 1996-12-05 1998-11-10 Cypress Semiconductor Corporation Dram with hidden refresh
US7262121B2 (en) * 2004-07-29 2007-08-28 Micron Technology, Inc. Integrated circuit and methods of redistributing bondpad locations
US7501676B2 (en) * 2005-03-25 2009-03-10 Micron Technology, Inc. High density semiconductor memory

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541754A (en) * 1978-09-20 1980-03-24 Fujitsu Ltd Semiconductor memory
EP0154685B1 (en) * 1980-01-25 1990-04-18 Kabushiki Kaisha Toshiba Semiconductor memory device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 24, no. 7B, December 1981, pages 3815-3816, Armonk, New York, US *
PATENTS ABSTRACTS OF JAPAN, vol. 4, no. 75 (E-13)[557], 31st May 1980, page 19 E 13 & JP-A-55 041 754 (FUJITSU K.K.) 24-03-1980 *

Also Published As

Publication number Publication date
US4763178A (en) 1988-08-09
DE3374103D1 (en) 1987-11-19
JPS5922358A (en) 1984-02-04
EP0102178A2 (en) 1984-03-07
JPH0328831B2 (en) 1991-04-22
EP0102178B1 (en) 1987-10-14

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