EP0074613A1 - Transition entre un guide à redan et une ligne à microbande pour un amplificateur haute fréquence - Google Patents

Transition entre un guide à redan et une ligne à microbande pour un amplificateur haute fréquence Download PDF

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Publication number
EP0074613A1
EP0074613A1 EP82108267A EP82108267A EP0074613A1 EP 0074613 A1 EP0074613 A1 EP 0074613A1 EP 82108267 A EP82108267 A EP 82108267A EP 82108267 A EP82108267 A EP 82108267A EP 0074613 A1 EP0074613 A1 EP 0074613A1
Authority
EP
European Patent Office
Prior art keywords
ridge
waveguide
microstrip line
microstrip
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP82108267A
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German (de)
English (en)
Inventor
Eiji c/o Nippon Electric Co. Ltd. Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of EP0074613A1 publication Critical patent/EP0074613A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the present invention relates to ridge waveguide-to-microstrip line transitions and, more particularly, to a ridge waveguide-to-microstrip line transition for an amplifier of the type which uses a field effect transistor (FET) or the like.
  • FET field effect transistor
  • a waveguide to-coaxial line transition or a ridge waveguide-to-microstrip line transition is employed to supply an FET amplifier with a microwave signal coming in through an antenna. Such a transition is required to prevent a d. c. bias voltage to an FET or like amplifier from flowing into the waveguide.
  • This requirement has been met in prior art waveguide-to-coaxial line transitions by the use of a circulator or a chip capacitor, as disclosed in U. S. Patent 4,152,666 issued on May 1, 1979.
  • a ridge waveguide-to-microstrip line transition on the other hand, it has been customary to install a chip capacitor in a microstrip line or, as taught by Yatsuka et al.
  • a ridge waveguide-to-microstrip line transition for an amplifier which connects a microstrip circuit with a ridge waveguide which has a waveguide body and a ridge, comprising a bias supply means for supplying the amplifier with a d.c. bias a thin layer of an insulating means interposed between the waveguide body and the ridge to block the supply of the d. c. bias voltage to the waveguide body.
  • the microwave signal is fed to the input of a ridge waveguide 2 which is made up of a waveguide body 2' and a ridge 2".
  • the transition 1 serves to convert the input microwave signal from a waveguide transmission mode to a microstrip line transmission mode.
  • the waveguide 2' is directly connected to the ridge 2".
  • the microstrip circuit 3 comprises a strip line 8 for signal transmission, a strip line 8' for the supply of a d. c.
  • the strip line 8 includes a coupling line 8" adapted to block a d- c. voltage.
  • the strip line 8 is connected at one end with the ridge 2" and at the other end with a terminal 11, that is, the gate of an FET amplifier 4. With this arrangement, the microwave signal processed by the transition 1 is coupled to the gate of the FET amplifier 4 via the strip line 8.
  • the FET amplifier may be replaced by any other type of high frequency amplifier, if desired.
  • a gate bias voltage circuit 6 is connected with a terminal 12 of the microstrip circuit 3 so as to supply the gate of the FET amplifier 4 with a d. c. bias voltage via the strip lines 8' and 8.
  • the coupling line 8" prevents this d. c. bias voltage from being grounded through the ridge 2".
  • the FET amplifier 4 amplifies the microwave signal and delivers its output to a terminal 13 of a microstrip circuit 5.
  • the microstrip circuit 5 comprises an output matching circuit (not shown), a strip line 16 and a coil 9, all of which are formed on a substrate.
  • the amplified microwave signal is fed through the strip line 16 to a terminal 14 which connects to the following RF signal processing circuit (not shown).
  • a drain bias voltage circuit 7 is connected with a terminal 15 of the microstrip circuit 5 to supply a d. c. voltage to the drain of the FET amplifier 4 via the coil 9 and strip line 16.
  • the source of the FET amplifier 4 is grounded.
  • a primer feature of the present invention is, as will become apparent later, that a thin spacer of insulator intervenes between the waveguide and the ridge of a ridge waveguide in order to intercept the gate bias voltage for an FET amplifier.
  • a second feature is that the ridge is supplied with a d. c. bias voltage from the outside of the ridge waveguide to prevent mismatching in a microstrip circuit.
  • the ridge waveguide-to-microstrip line transition shown in Figure 2 has both the first and second features stated above. It will be described with reference to Figures 3A and 3B as well.
  • a microwave signal is coupled to an input 10 of a ridge waveguide-to-microstrip line transition 21 which is interposed between the ridge waveguide 22 and a microstrip circuit 30.
  • the ridge waveguide 22 includes a waveguide body 22', a ridge 22" which includes a bolt 24, a nut 25 and a metallic terminal plate 23, for the supply of a gate bias voltage, a spacer 26 made of an insulating material (e.g. 0.05 mm thick polyester sheet), and a shaped piece of insulating resin .27.
  • the spacer 26 sets up d. c. insulation between the waveguide body 22' and the ridge 22" but allows a microwave signal to pass therethrough.
  • the resin 27 electrically insulates the bolt 24, nut 25 and terminal plate 23 from the waveguide 22'.
  • the microstrip circuit 30 comprises a microstrip line 31 for signal transmission, a microstrip line 32 for grounding and an input matching circuit (not shown), all of which are formed on the surfaces of a substrate 30' made of alumina.
  • a ribbon metal line 28 connects the ridge 22" with one end of the microstrip line 31.
  • the other end of the microstrip line 31 is connected to the gate 34 of the FET amplifier 4.
  • the source of the FET amplifier 4 is connected to the waveguide body 22' and, therefore, to the ground, while the drain 35 is connected to the microstrip circuit 5 as in the circuitry shown in Figure 1.
  • the microstrip circuit 30 is made up of a substrate 5' made of alumina, a strip line 16 for signal transmission, a strip line 17 for grounding and an output matching circuit (not shown ⁇ .
  • a microwave signal applied to the input 10 is fed to the FET amplifier 4 by way of the ridge 22', ribbon metal line 28 and microstrip line 31.
  • a d. c. bias voltage from a gate bias voltage circuit 6 is fed to the gate of the FET amplifier 4 through the terminal plate 23, nut 24, ridge 22", ribbon metal line 28 and microstrip line 31 in succession.
  • microstrip circuit 30 in the circuitry of Figure 2 does not need the coupling line 8" or the bias strip line 8' as indicated in Figure 1, because the spacer 26 blocks a d. c. voltage while the bias voltage is fed through the ridge 22". This renders the transition readily producible and excellent in electrical characteristic s.
  • FIG. 4 there is shown another embodiment of the present invention which is furnished only with the first feature in order to promote far easier production.
  • the ridge waveguide-to-microstrip line transition 51 shown in Figure 4 includes, as indicated in Figures 5A and 5B, a waveguide body 52', a ridge 52" and a spacer 53 made of an insulating material.
  • the waveguide body 52' therefore, is insulated from the ridge 52" against a d. c. voltage while the microwave signal is coupled through the spacer 53.
  • a microstrip circuit 60 comprises a substrate 60' made of alumina, a microstrip line 61 for signal transmission, a strip line 62 for connection, a strip line 63 for a d. c. bias terminal, and a grounding strip line 64.
  • the ridge 52" is connected with one end of the microstrip line 61 by a ribbon metal line 54.
  • the other end of the microstrip line 61 is connected with the gate 34 of the FET amplifier 4.
  • the output of the bias voltage circuit 6 is coupled to the strip line 63 and the d. c. voltage is supplied to the gate 34 of the FET amplifier 4 via the strip lines 63, 62 and 61. Yet, the d. c. voltage is prevented by the spacer 53 from reaching the waveguide body 52 and, therefore, to-the ground.
  • Curves shown in Figures 6A and 6B represent return loss vs. frequency characteristics actually measured with circuitries of the type shown in Figure 2 with and without a 0.05 mm thick polyester sheet.
  • Curves shown in Figures 7A and 7B indicate insertion loss vs. frequency characteristics measured under the same conditions as the curves in Figures 6A and 6B. It will be clear from these curves that the return loss and insertion loss are quite negligible and, additionally, the presence and absence of the spacer does not cause any appreciable difference in characteristics.
  • the present invention provides a ridge waveguide-to-strip line transition for an FET amplifier embodying the present invention that can be produced very easily to excellent characteristics.

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  • Microwave Amplifiers (AREA)
EP82108267A 1981-09-11 1982-09-08 Transition entre un guide à redan et une ligne à microbande pour un amplificateur haute fréquence Withdrawn EP0074613A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14412381A JPS5846702A (ja) 1981-09-11 1981-09-11 直流阻止形リツジ導波管・マイクロストリツプライン変換器
JP144123/81 1981-09-11

Publications (1)

Publication Number Publication Date
EP0074613A1 true EP0074613A1 (fr) 1983-03-23

Family

ID=15354724

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82108267A Withdrawn EP0074613A1 (fr) 1981-09-11 1982-09-08 Transition entre un guide à redan et une ligne à microbande pour un amplificateur haute fréquence

Country Status (2)

Country Link
EP (1) EP0074613A1 (fr)
JP (1) JPS5846702A (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985003170A1 (fr) * 1984-01-06 1985-07-18 B.E.L-Tronics Limited Construction d'antenne/melangeur pour detecteurs de radars micro-ondes
EP0169048A2 (fr) * 1984-07-20 1986-01-22 Nec Corporation Commutateur ultra-haute fréquence
EP0730165A2 (fr) * 1995-03-03 1996-09-04 Gec-Marconi Limited Circuit intégré à micro-ondes pour ondes millimétriques
EP0886337A2 (fr) * 1997-06-17 1998-12-23 Robert Bosch Gmbh Dispositif de couplage d'un guide d'ondes à un réseau d'alimentation pour une antenne plane
EP2500978A1 (fr) * 2011-03-17 2012-09-19 Sivers Ima AB Transition de guide d'onde
WO2018028762A1 (fr) * 2016-08-08 2018-02-15 Telefonaktiebolaget Lm Ericsson (Publ) Guide d'ondes et agencement de guide d'ondes avec transition de guide d'ondes
WO2021250117A1 (fr) * 2020-06-11 2021-12-16 Thales Amplificateur hyperfrequences de puissance a etat solide et combineur de puissance comprenant quatre tels amplificateurs a etat solide

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262739A (en) * 1989-05-16 1993-11-16 Cornell Research Foundation, Inc. Waveguide adaptors
US5017892A (en) * 1989-05-16 1991-05-21 Cornell Research Foundation, Inc. Waveguide adaptors and Gunn oscillators using the same
CN117080705B (zh) * 2023-10-17 2023-12-22 中国工程物理研究院电子工程研究所 一种共线型双脊波导-微带线过渡电路

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
1981 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, June 15-19, 1981, IEEE, New York (US) *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985003170A1 (fr) * 1984-01-06 1985-07-18 B.E.L-Tronics Limited Construction d'antenne/melangeur pour detecteurs de radars micro-ondes
EP0169048A2 (fr) * 1984-07-20 1986-01-22 Nec Corporation Commutateur ultra-haute fréquence
EP0169048A3 (en) * 1984-07-20 1986-08-27 Nec Corporation Ultra-high frequency switch
EP0730165A2 (fr) * 1995-03-03 1996-09-04 Gec-Marconi Limited Circuit intégré à micro-ondes pour ondes millimétriques
EP0730165A3 (fr) * 1995-03-03 1997-01-02 Marconi Gec Ltd Circuit intégré à micro-ondes pour ondes millimétriques
EP0886337A2 (fr) * 1997-06-17 1998-12-23 Robert Bosch Gmbh Dispositif de couplage d'un guide d'ondes à un réseau d'alimentation pour une antenne plane
EP0886337A3 (fr) * 1997-06-17 1999-11-10 Robert Bosch Gmbh Dispositif de couplage d'un guide d'ondes à un réseau d'alimentation pour une antenne plane
EP2500978A1 (fr) * 2011-03-17 2012-09-19 Sivers Ima AB Transition de guide d'onde
WO2012123473A1 (fr) * 2011-03-17 2012-09-20 Sivers Ima Ab Transition entre guides d'ondes
WO2018028762A1 (fr) * 2016-08-08 2018-02-15 Telefonaktiebolaget Lm Ericsson (Publ) Guide d'ondes et agencement de guide d'ondes avec transition de guide d'ondes
US10950920B2 (en) 2016-08-08 2021-03-16 Telefonaktiebolaget Lm Ericsson (Publ) Transition between a tubular waveguide body and an external planar connection portion through a planar matching ridge in the waveguide body
WO2021250117A1 (fr) * 2020-06-11 2021-12-16 Thales Amplificateur hyperfrequences de puissance a etat solide et combineur de puissance comprenant quatre tels amplificateurs a etat solide
FR3111478A1 (fr) 2020-06-11 2021-12-17 Thales Amplificateur hyperfréquences de puissance à état solide et combineur de puissance comprenant quatre tels amplificateurs à état solide

Also Published As

Publication number Publication date
JPS5846702A (ja) 1983-03-18

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Inventor name: NAGATA, EIJIC/O NIPPON ELECTRIC CO., LTD.