EP0063415A1 - Testfläche zum Justieren und Prüfen von Infrarotempfangsvorrichtungen - Google Patents

Testfläche zum Justieren und Prüfen von Infrarotempfangsvorrichtungen Download PDF

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Publication number
EP0063415A1
EP0063415A1 EP82301491A EP82301491A EP0063415A1 EP 0063415 A1 EP0063415 A1 EP 0063415A1 EP 82301491 A EP82301491 A EP 82301491A EP 82301491 A EP82301491 A EP 82301491A EP 0063415 A1 EP0063415 A1 EP 0063415A1
Authority
EP
European Patent Office
Prior art keywords
substrate
dielectric material
target
calibrating
target pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP82301491A
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English (en)
French (fr)
Other versions
EP0063415B1 (de
Inventor
Michael P. Wirick
James P. Wright
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of EP0063415A1 publication Critical patent/EP0063415A1/de
Application granted granted Critical
Publication of EP0063415B1 publication Critical patent/EP0063415B1/de
Expired legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F41—WEAPONS
    • F41J—TARGETS; TARGET RANGES; BULLET CATCHERS
    • F41J2/00—Reflecting targets, e.g. radar-reflector targets; Active targets transmitting electromagnetic or acoustic waves
    • F41J2/02—Active targets transmitting infrared radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
    • G01J5/53—Reference sources, e.g. standard lamps; Black bodies
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H04N23/23—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from thermal infrared radiation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation

Definitions

  • This invention relates to the calibration and testing. of infrared radiation detection devices.
  • Infrared detection devices such as infrared receivers, forward looking infrared systems, infrared imaging systems and imaging radiometers are designed to detect differences in heat radiated from an object or scene. There is a need to calibrate and measure the performance of such devices, that is, to provide a measure of how well the device can resolve the image of an object of a given temperature in a background having a temperature near that of the object itself.
  • a high resolution detection device must have the capability of perceiving small differences in temperature among closely spaced objects in the field of view.
  • Apparatus and methods for calibrating and testing infrared detectors are well-known; see, e.g., U.S. Patents 3,596,096; 3,845,295; 3,971,886; 3,986,334; and 4,047,032.
  • the disclosed apparatus and methods suffer from one or more of the following disadvantages: they do not provide a desired spatial resolution of temperature differentials (AT) of about 0.01°C, or are cumbersome, or are not suitable for use in a remote field environment having uncontrolled ambient temperature or are expensive.
  • AT temperature differentials
  • an apparatus for calibrating and testing infrared detection devices which comprises
  • infrared detection devices are calibrated and tested by applying heat to the target pattern, sensing at least one differential temperature contrast between the target pattern and the substrate supporting it, and comparing the resulting contrast with either a visual or electronic depiction of the scene being detected.
  • the apparatus of the invention is capable of providing temperature differences ranging from about 10°C down to at least 0.02°C. Importantly, the apparatus is useful in the field, where ambient temperatures are characteristically not controllable and where its compact size is advantageous. Finally, the apparatus is considerably less expensive than prior art apparatus.
  • the apparatus for calibrating and testing IR detection devices produces a precise contrast (apparent differential temperature) under uncontrolled ambient temperature conditions.
  • the apparatus or infrared resolution target, comprises a target pattern 10 of dielectric material 12 formed on a substrate 14, which has a relatively constant heat input to provide a thermal flux.
  • the target By control of dielectric material composition and thickness and surface roughness of the substrate, different parts of the resolution target may have controlled, different absorptivities, transmissivities and emissivities.
  • the target will appear to have one or more differential temperatures (contrasts) to an imaging radiometer or other infrared detection device.
  • Different contrasts are achieved, for example, by forming parts of the target pattern to different thicknesses. For clarity, the thicknesses of the dielectric material forming the target pattern have been exaggerated.
  • the substrate 14 comprises a material having sufficient heat conductivity and being thin enough to pass heat from one of its major surfaces to the other.
  • suitable substrates materials include aluminum, copper, silver and nickel, which have high heat conductivities.
  • the thickness need only be sufficient to provide support for the pattern of dielectric material to be formed on one surface.
  • aluminum substrates conveniently range from 0.005 to 0.5 inch in thickness.
  • a thin metallic film may be overcoated on the metal substrate to provide a higher background emissivity or to protect the underlying substrate.
  • a thin film e.g., 400 A
  • nickel has a higher emissivity than aluminum, which implies a more rapid change in differential temperature with the dielectric material thickness and hence greater sensitivity. Further, the nickel coating stabilizes the aluminum substrate against aging effects.
  • the target pattern 10 comprising dielectric material 12 is formed on at least one region of one surface of the substrate.
  • the dielectric material is formed in a pattern such that following a slight delay from application of heat, at least one apparent differential temperature contrast is observable between the dielectric material and the substrate.
  • an array of at least two, and preferably three or four, bars of dielectric material of a particular thickness is formed on the substrate.
  • a plurality of such arrays as depicted in FIG. 2, is provided. Each array evidences different apparent temperture/emissivity characteristics.
  • the dielectric material 12 must be at least semi- absorbing in the infrared and in any event cannot be totally transparent, since there would be no variation in emissivity as compared with the substrate.
  • suitable dielectric materials include silica (Si0 2 ), titania (Ti0 2 ), polyethylene, neutral density glass (crown-type glass with absorbing particles added to the melt), alumina (A1 2 0 3 ) and zinc selenide (ZnSe).
  • the thickness of the dielectric film must not exceed the depth of field of the infrared detection device's focal plane, which provides an upper limit for most applications of about 0.005 inch. Further, no absorp-0 tion occurs for thicknesses less than about 100 A. Thus, the thickness of the dielectric film ranges from about 0 100 A to 0.005 inch. In practice, the upper range is 0 usually limited to about 20,000 A if thin film vacuum deposition procedures are utilized, since technical problems exist in maintaining film homogeneity at greater vacuum deposition thicknesses.
  • the dielectric film pattern Although a variety of procedures may be employed to fabricate the dielectric film pattern, it is advantageously produced by thin film vacuum deposition of the desired dielectric material through a metal mask such as nickel, the mask having the desired target pattern etched therethrough. Thickness of the dielectric material is conveniently controlled by covering one or more portions of the patterned mask during the deposition.
  • Means for applying heat to the backside of the substrate conveniently comprises a heater 16 such as a resistance film in silicone rubber sheet, available from Minco Products, Inc. (Minneapolis, MN).
  • the heater is supplied with power from a power supply 18.
  • the power supply need not be precisely controlled; typically, a variation of 10% will result in only a 1% variation in temperature difference.
  • FIG. 2 shows the target plate or substrate 14 mounted in a shield box 20.
  • the heater 16 is mounted just behind the substrate and is electrically connected to the power supply 18 by a cable 22.
  • Insulation 24 is provided behind the heater to retain heat and prevent undesired heat losses.
  • calibration and testing of IR detection devices is accomplished by applying a substantially constant voltage to maintain an essentially constant heat on the substrate supporting the target pattern.
  • the target pattern in conjunction with the substrate, provides two emissivity areas -- one of high emissivity (the target pattern) and the second of low emissivity (the substrate). Both receive heat from the same source and are at nearly the same temperature; however, the target pattern emits more IR radiation (heat) because of its higher emissivity. Therefore, an apparent temperature difference is perceived between the target pattern and substrate; it is this temperature difference which is used to calibrate and test an IR detection device.
  • Control over the apparent temperature difference is obtained by controlling the thicknesses of the dielectric material forming the target patterns and can be augmented by employing two or more different dielectric materials as the target pattern. Employing a combination of varying thicknesses and/or dielectric materials provides a range of apparent temperature differences.
  • the emissivity is dependent on the thickness of the dielectric material used as the target pattern. For example, on a substrate having an emissivity of 0.35, thicknesses on the order of hundreds of Angstroms provide a low emissivity of about 0.4, while films on the 0 order of tens of thousands of Angstroms thick provide comparatively higher emissivities of about 0.9.
  • ⁇ T For each AT, there is one target pattern array on a substrate. If more than one AT is required for test of a specific detection device, then additional target pattern arrays are formed on the substrate.
  • heater power There are three methods for controlling ⁇ T: heater power, dielectric film thickness and composition of dielectric film.
  • Small ⁇ Ts are achieved by using a combination of low power, thin films and a film of a composition having an emissivity close to that of the substrate.
  • a very low AT such as 0.02°C, is achieved by employing a dielectric film with very low absorption (e.g., 100 A of Si0 2 ) so that the emissivity of the substrate is barely changed, say from 0.35 to 0.36.
  • the substrate, or overcoated background material, emissivity should be chosen to provide the desired sensitivity of AT to dielectric film thickness (i.e., assuming the same heater power input, if gold of emissivity 0.04 were used in place of nickel of emissivity 0.55 for the background, then 100 A of silica would yield a AT of about 0.2°C instead of 0.02°C, as for the nickel background).
  • the background material should also be selected for good stability of emissivity with aging. Gold, aluminum and silver are less desirable than nickel in this regard. So long as the background metallic layer is sufficiently thick to evidence zero transmission (typically at least about 50 A for most metals), its emissivity is a constant of the material and is independent of thickness.
  • a target similar to that shown in FIG. 1 was designed and fabricated for performance evaluation with respect to changing ambient background temperature.
  • the target comprised a two bar pattern, with the bars painted on an aluminum disc of 20 ⁇ m rms surface roughness coated with a thin film of nickel.
  • the paint used for the bars was Liquid Retype (available from Wirth Company of Hayward, CA), which comprises about 5 to 10% hydrocarbons, about 24 to 30% titanium dioxide and about 35 to 65% solvent.
  • the emissivity of the target bars was 0.93 and that of the target background about 0.55.
  • the bar widths and separations were 0.080 inches each.
  • the target was located at the bottom of a 1.5 inch long tunnel with wall emissivity about 0.94.
  • a strip heater was located in the tunnel wall to simulate background temperature and a thermistor was also in the wall to monitor the simulated background temperature.
  • a double airspaced window of clear polyethylene was provided in order to minimize cooling of the chamber by convection and conduction.
  • a heater was mounted in contact with the aluminum target disc for providing target heat, and a thermistor was placed behind the heater to monitor the target temperature.
  • the equipment employed to perform the tests on the target consisted of a UTI Model 900 Thermal Imager and a Quantex DIP 9 Image Processor.
  • the spectral bandpass of the imager was limited to the 8 to 14 ⁇ m waveband by filtering. Differential temperature measurement accuracy limit of the imager was +0.017°C.
  • a second target was used to evaluate the minimum resolvable temperature difference (MRTD).
  • the target consisted of a series of four bar patterns for each of four spatial frequencies, in the range of 0.002 to 0.020 inch or 0.1 to 1.0 milliradians angular subtense for a 10 inches radiometer focal length.
  • the pattern series for each spatial frequency bracketed the acceptable MRTD at that frequency representing a go-no go display for an observer.
  • An aluminum disc of 12 ⁇ m rms mask surface roughness was the target substrate, and thin films of nickel (400 A) for the background and Si0 2 (100 to ° 10,000 A) for the bars were deposited in turn on the substrate to generate the background and bar emissivities, respectively, that in turn produced the required apparent temperature differences.
  • the pattern employed was similar. to that depicted in FIG. 1.
  • the measured target temperature calibration errors for 21 target patterns exhibited a range of +1.70°C to -0.11°C from the preliminary design calculated values for this thin film target.
  • the average absolute error was 0.50°C.
  • Temperature variations of 1.0 to 1.5°C over the target background were measured, due to non-uniform nickel film thickness.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Remote Sensing (AREA)
  • General Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
EP82301491A 1981-04-20 1982-03-23 Testfläche zum Justieren und Prüfen von Infrarotempfangsvorrichtungen Expired EP0063415B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US255966 1981-04-20
US06/255,966 US4387301A (en) 1981-04-20 1981-04-20 Target for calibrating and testing infrared detection devices

Publications (2)

Publication Number Publication Date
EP0063415A1 true EP0063415A1 (de) 1982-10-27
EP0063415B1 EP0063415B1 (de) 1986-03-05

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US (1) US4387301A (de)
EP (1) EP0063415B1 (de)
DE (1) DE3269547D1 (de)
IL (1) IL65268A0 (de)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990001686A1 (en) * 1988-08-04 1990-02-22 Hughes Aircraft Company Flicker-free infrared simulator with resistor bridges
US4922116A (en) * 1988-08-04 1990-05-01 Hughes Aircraft Company Flicker free infrared simulator with resistor bridges
US5010251A (en) * 1988-08-04 1991-04-23 Hughes Aircraft Company Radiation detector array using radiation sensitive bridges
WO1991012481A1 (en) * 1990-02-12 1991-08-22 Hughes Aircraft Company Multi-wavelength target system
EP0583007A1 (de) * 1992-08-11 1994-02-16 Texas Instruments Incorporated Vorrichtung und Verfahren zur Kalibrierung eines Temperatursensors
FR2731862A1 (fr) * 1995-03-14 1996-09-20 Itc Sarl Dispositif de mise au point d'appareillage de thermographie
US5594832A (en) * 1992-12-10 1997-01-14 Deutsche Forschungsanstalt Fur Luft- Und Raumfahrt E.V. Black body radiator with reflector
FR2877098A1 (fr) * 2004-10-22 2006-04-28 Thales Sa Cible pour systemes de reception a infrarouge
CN110230869A (zh) * 2019-05-17 2019-09-13 青岛海尔空调器有限总公司 空调系统及其人体温度检测方法和控制方法
US20230022988A1 (en) * 2021-07-14 2023-01-26 The Government of the United States of America, as represented by the Secretary of Homeland Security Thermal imaging test article

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US4543609A (en) * 1981-01-19 1985-09-24 Lectrolarm Custom Systems, Inc. Television surveillance system
US4621265A (en) * 1982-09-30 1986-11-04 The Boeing Company Millimeter wave passive/active simulator array and method of evaluating the tracking capability of an active/passive target seeker
FR2538202B1 (fr) * 1982-12-17 1986-10-24 Trt Telecom Radio Electr Mire thermique pour collimateur d'une camera infra-rouge
US4502792A (en) * 1982-12-20 1985-03-05 Shell Oil Company Apparatus for calibrating a pyrometer
GB2186968B (en) * 1986-02-20 1990-03-21 Metal Box Co Ltd Temperature monitoring systems
US5023459A (en) * 1987-04-17 1991-06-11 Ford Aerospace & Communications Corporation Miniature multi-temperature radiometric reference
GB8920614D0 (en) * 1989-09-12 1989-10-25 Secr Defence Testing device for thermal imagers
US5128884A (en) * 1989-12-18 1992-07-07 Prager Kenneth E Black body calibration using image processing techniques
US5175432A (en) * 1990-10-31 1992-12-29 Gruman Aerospace Corporation Infrared detector module test system
FR2679654B1 (fr) * 1991-07-23 1996-02-09 Thomson Csf Systeme d'imagerie a mesure integree de l'usure de ses elements optiques travaillant en transmission, et equipement optronique d'imagerie comportant un tel systeme d'imagerie.
US5354987A (en) * 1992-12-07 1994-10-11 Texas Instruments Incorporated Calibrating focal plane arrays using multiple variable radiometric sources
US5324937A (en) * 1993-01-21 1994-06-28 Hughes Aircraft Company Target for calibrating and testing infrared devices
US5416332A (en) * 1993-10-01 1995-05-16 Hughes Aircraft Company Integrated test target assembly and compact collimator
US5617318A (en) * 1995-05-08 1997-04-01 Northrop Grumman Corporation Dynamically reconfigurable data processing system
US5762419A (en) * 1995-07-26 1998-06-09 Applied Materials, Inc. Method and apparatus for infrared pyrometer calibration in a thermal processing system
US5703276A (en) * 1996-05-30 1997-12-30 The United States Of America As Represented By The Secretary Of The Army One-window cell for testing passive remote vapor detectors
US5756991A (en) * 1996-08-14 1998-05-26 Raytheon Company Emissivity target having a resistive thin film heater
GB0205484D0 (en) * 2002-03-08 2002-04-24 Bae Systems Plc Improvements in or relating to the calibration of infra red cameras
AU2004271181A1 (en) * 2003-09-04 2005-03-17 Quartex Temperature measuring apparatus
GB0321511D0 (en) * 2003-09-13 2003-10-15 Univ St Andrews Radiometric calibration
US7661876B2 (en) * 2007-11-14 2010-02-16 Fluke Corporation Infrared target temperature correction system and method
US8368760B1 (en) 2008-10-16 2013-02-05 Raytheon Company System and method to generate and display target patterns
CN101504317B (zh) * 2009-02-27 2011-05-25 中国人民解放军海军工程大学 一种简便检测红外成像系统性能参数的装置
US8147129B2 (en) * 2009-04-08 2012-04-03 Analog Devices, Inc. Apparatus for testing infrared sensors
DE102009054842A1 (de) * 2009-12-17 2011-06-22 Georg-Simon-Ohm-Hochschule für angewandte Wissenschaften- Fachhochschule Nürnberg, 90489 Thermografische Messvorrichtung
US20120209064A1 (en) * 2011-02-14 2012-08-16 Olympus Corporation Endoscope apparatus and method of setting reference image of endoscope apparatus
US10907938B2 (en) 2012-08-17 2021-02-02 Raytheon Company Infrared camouflage textile
EP3052911A1 (de) 2013-10-04 2016-08-10 Battelle Memorial Institute Kontrastphantom für passive millimeterwellen-bildgebungssysteme
RU170729U1 (ru) * 2015-11-20 2017-05-04 Открытое Акционерное Общество "Пеленг" Мишень контрольно-выверочная
CN109238336A (zh) * 2018-09-12 2019-01-18 东莞市奕冠塑胶五金电子有限公司 一种全自动红外线感应器测试室
CN109520624A (zh) * 2019-01-26 2019-03-26 长春奥普光电技术股份有限公司 一种靶板及光电系统分辨率测试方法
EP4121728A1 (de) * 2020-03-17 2023-01-25 Seek Thermal, Inc. Kostengünstige, massenherstellbare kalibrierungsquelle für temperaturgesteuerte thermische bildgebung

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US3478211A (en) * 1967-12-15 1969-11-11 Us Navy Infrared gray scale array
US3986304A (en) * 1975-12-02 1976-10-19 Hobart Corporation Sharpener for commodity slicing machine
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990001686A1 (en) * 1988-08-04 1990-02-22 Hughes Aircraft Company Flicker-free infrared simulator with resistor bridges
US4922116A (en) * 1988-08-04 1990-05-01 Hughes Aircraft Company Flicker free infrared simulator with resistor bridges
US5010251A (en) * 1988-08-04 1991-04-23 Hughes Aircraft Company Radiation detector array using radiation sensitive bridges
WO1991012481A1 (en) * 1990-02-12 1991-08-22 Hughes Aircraft Company Multi-wavelength target system
US5083034A (en) * 1990-02-12 1992-01-21 Hughes Aircraft Company Multi-wavelength target system
EP0583007A1 (de) * 1992-08-11 1994-02-16 Texas Instruments Incorporated Vorrichtung und Verfahren zur Kalibrierung eines Temperatursensors
US5594832A (en) * 1992-12-10 1997-01-14 Deutsche Forschungsanstalt Fur Luft- Und Raumfahrt E.V. Black body radiator with reflector
FR2731862A1 (fr) * 1995-03-14 1996-09-20 Itc Sarl Dispositif de mise au point d'appareillage de thermographie
FR2877098A1 (fr) * 2004-10-22 2006-04-28 Thales Sa Cible pour systemes de reception a infrarouge
CN110230869A (zh) * 2019-05-17 2019-09-13 青岛海尔空调器有限总公司 空调系统及其人体温度检测方法和控制方法
US20230022988A1 (en) * 2021-07-14 2023-01-26 The Government of the United States of America, as represented by the Secretary of Homeland Security Thermal imaging test article
US11579018B1 (en) * 2021-07-14 2023-02-14 The Government of the United States of America, as represented by the Secretary of Homeland Security Thermal imaging test article

Also Published As

Publication number Publication date
DE3269547D1 (en) 1986-04-10
US4387301A (en) 1983-06-07
EP0063415B1 (de) 1986-03-05
IL65268A0 (en) 1982-05-31

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