EP0020234A1 - Pick-up target, tube provided with such a target and pick-up device comprising such a tube - Google Patents

Pick-up target, tube provided with such a target and pick-up device comprising such a tube Download PDF

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Publication number
EP0020234A1
EP0020234A1 EP80400696A EP80400696A EP0020234A1 EP 0020234 A1 EP0020234 A1 EP 0020234A1 EP 80400696 A EP80400696 A EP 80400696A EP 80400696 A EP80400696 A EP 80400696A EP 0020234 A1 EP0020234 A1 EP 0020234A1
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Prior art keywords
target
signal
tube
point
elementary
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German (de)
French (fr)
Inventor
Pierre Felix
Lucien Guyot
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Thales SA
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Thomson CSF SA
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/08Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons

Definitions

  • the invention relates to a shooting target, as well as the shooting tube provided with such a target, and the entire device formed by the tube and its reading means.
  • the target of the invention can be of varied structure, photoconductive target in one of the usual materials, such as antimony sulfide (Sb 2 s 3 ), lead oxide (Pbo), etc., or mosaic target photodiodes-formed in a silicon substrate, or pyroelectric target ...
  • the invention applies generally to all these kinds of targets used for taking pictures, without distinction as to their nature.
  • the target has on one of its faces a conductive plate, or signal plate, from which the electrical signal corresponding to the different points of the target is sampled, during point-to-point scanning of the other face thereof, by the reading electron beam.
  • the beam deposits at each point a certain quantity of electrons to compensate for the effect produced at this point in the substrate by the incident radiation. This quantity, read in the circuit of the signal plate, constitutes the signal of the point.
  • the present invention relates to a target having a reduced signal plate capacity.
  • FIG. 1 we distinguish the target 1 and its two constituent parts, namely the target itself 10 , consisting of a plate of a photosensitive material, and, applied to one of the faces of this plate, the signal plate 11, from which, as we have said, the signals from the different points are taken in operation of the target.
  • the incident radiation arrives from the right of the figure, on the side of the signal plate, which has good transparency to this radiation, represented by the wavy arrow.
  • a cathode 21 provides , in operation, an electron beam, e (bent arrow), directed towards the target and scanning, as is known in the art, the target in question point by point; the means used to beam deflection to ensure this scanning have not been shown in this schematic view as known in the art.
  • a grid 22 placed in front of the target is connected to the voltage source U G.
  • the signal plate is polarized with respect to ground by the voltage source V C , or target voltage, by means of a bias resistor Rp of 5 MQ.
  • the preamplifier 3 with low input resistance comprises two stages, the first of which is constituted, in the example, by a field effect transistor with junction 30, at low noise level, the source and the drain of which are represented in S and D respectively, and the grid in G; the second stage consists of an operational amplifier 31, the output A of which is that of the reading device.
  • the signal plate 11 is connected to the transistor by a connection capacity C L of the order of 10 nanofarads.
  • the loop 40 includes a resistance R F of the order of a few megohms; the drain of the field effect transistor 30 is polarized with respect to ground by the voltage source V and the resistance R L.
  • FIG 2 gives the equivalent electrical diagram of the device object of Figure 1, for the AC component of the target current i (left arrow) flowing through the device.
  • C p represents the parasitic capacitance of the signal plate (reference 11 on the overview of the previous figure) and which is of the order of 8 picofarads in the example, that is to say the capacity between the signal plate in question and the mass, and that connections with respect to the same ground.
  • C L of the previous figure n t is not represented, because for the alternative, it is equivalent to a short circuit;
  • C S and C D denote in the figure the capacities of the gate of the junction transistor with respect to the source and the drain thereof, of 2.5 and 1.5 picofarads respectively;
  • the mark g represents the transconductance of the junction transistor;
  • V g represents the AC component of the voltage at the gate of the transistor.
  • the Schottky noise associated with the target current the lower the lower the target current, the thermal noise associated with the resistors R p and R F , the lower as these resistances are high, and the noise associated with the noise voltage at the junction transistor.
  • the noise associated with the target, generation and recombination noise in the case of a semiconductor target, thermal noise in the case of a pyroelectric target is generally negligible compared to the other noise sources.
  • the noise current associated with the first stage is also negligible in the case of a junction field effect transistor.
  • the noise of such a device is equivalent to a target noise current which will be designated by i a and of expression:
  • C T is equal to the sum of the stray capacitances and where denotes the noise voltage of the first stage, that is to say of the field effect transistor in The example.
  • C T Cp + C s + C D ; in this formula, B denotes the bandwidth of the device, proportional to the image frequency and to the number of points of the target, that is to say to the resolution.
  • the current i B is of the order of a few hundred picoamps.
  • the target noise i B is a direct reason, of the total capacity C T.
  • the noise is lower when the parasitic capacitance C p is lower.
  • the reduction in capacity C is obtained by splitting the signal plate into several parts, electrically isolated from each other, under the conditions which will be specified.
  • Figure 3 shows in perspective a target of the invention generally designated by the reference 1, as in Figure 1, and composed as in the case of this figure of the target itself 10 and the signal plate.
  • the latter bears the reference 110 and differs from that of FIG. 1 in that, in the invention, it is made up of several separate parts, electrically isolated from each other as shown in the drawing, and to which the references 101, 102, 103 have been given; in the figure, for clarity, the proportions of the elements, in particular their thicknesses, have not been respected.
  • the different portions of the target signal plate of the invention, or elementary plates, can have any orientation with respect to the direction of scanning of the target by the reading beam; however, in a preferred embodiment of the invention, they are arranged parallel to the direction of this scan.
  • the signal plate is thus divided into p elementary signal plates; p is equal to -, N being the number of lines of the scan, for example of television, and n the number of lines of this scan arranged opposite the elementary signal plate considered.
  • the previous capacity C is divided by p. It goes without saying that the maximum value of p is N, that is to say the number of lines of the scan; in this case there are as many elementary plates as there are scanning lines.
  • Each of the elementary signal plates is connected to a preamplifier.
  • a switching system makes it possible to switch at all times the output of the reading device to the preamplifier associated with the elementary signal plate which receives the single reading or analysis beam, according to known addressing techniques.
  • the p preamplifiers as well as the addressing register can be, depending on the case, inside or outside the camera tube, which has the corresponding number of outputs.
  • FIG. 4 The scheme of such a switching system is given in Figure 4; four elementary nameplates are represented by rectangles without markers; each covers on the target, in the example, the surface of five scanning lines (broken lines).
  • the p preamplifiers limited to four in the example, p l , P 2 , P 3 , P 4 , are connected sequentially to the output A of the output amplifier a by switching transistors t 1 , t 2 , t 3 , t 4 .
  • An address register R the scanning of which is synchronous with the scanning of the target by the reading beam, allows the sequential addressing of the gates of the transistors.
  • the targets of the invention and their reading device can be produced in various ways, which can be classified into two categories, fully integrated or hybrid; in the first, the preamplifiers are integrated on the same substrate as the target.
  • the preamplifiers are integrated on the same substrate as the target.
  • the lowest noise voltage of an integrated operational amplifier is, in nanovolts, 4. ⁇ B, B being the bandwidth measured in hertz.
  • the preamplifiers are produced in the form of separate "chips" bonded to a common substrate, which may be the window of the shooting tube, c that is to say the part of its envelope exposed to incident radiation: right-hand end face of this envelope in FIG. 1
  • Reading of the target of the invention can be done by means of several reading beams, each of these being used to read the lines located opposite a plate or a group of elementary plates.
  • analysis beams In the intermediate situation there is analysis beams.
  • Each of the P k reading beams analyzes in parallel the k elementary signal plates of the group.
  • a device for switching by analysis beam is used for reading, making it possible to connect sequentially to each of the outputs of the tube the k preamplifiers associated with each of the k plates of the group.
  • the pk electron beams required are obtained either from a single cathode and an electronic optic making it possible to divide the emitted beam into pk elementary beams, or a system of diaphragms arranged in the immediate vicinity of the cathode, or from pk elementary cathodes. Possibly the means of focusing and vertical and horizontal deflection are common to all the elementary beams.
  • a scanning speed of the elementary beams identical to the scanning speed in the case of a single beam (bandwidth unchanged).
  • This reduction is also favorable for reading a mosaic target of photovoltaic detectors, or MIS, sensitive to infrared radiation, and where the integration time is limited by the generation due to the continuous background.
  • the frame period T is kept; the scanning speed is then divided by , as well as the bandwidth.
  • the signal is also divided by .
  • the analysis time for a given point is therefore multiplied by , you can have the same reading efficiency of the target points with a beam resistance higher by a factor , so with a target current more small by a factor , the beam resistance being inversely proportional to the target current.
  • Schottky noise associated with the beam current proportional to (i c denoting the target current and B the bandwidth) is therefore globally divided by , since i and B are each separately divided by this factor.
  • the applications of the target of the invention are the same as those of the targets of the known art, in particular taking infrared shots.

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  • Transforming Light Signals Into Electric Signals (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

L'invention concerne une cible de prise de vues. La plaque signal (110) qui recouvre sur l'une de ses faces la cible proprement dite (10) est fractionnée en plusieurs plaques signal élémentaires (101), (102), (103) ... électriquement indépendantes, afin de réduire la capacité parasite lors du prélèvement du signal sur cette plaque. Dans une disposition préférée, ces plaques élémentaires sont orientées comme les lignes du balayage par le faisceau d'électrons de lecture. Cette lecture est faite soit par un faisceau unique, soit par un certain nombre de faisceaux indépendants couvrant chacun une portion de la cible. Mêmes applications que dans l'art antérieur, prise de vues en infra-rouge notamment.The invention relates to a shooting target. The signal plate (110) which covers on one of its faces the target proper (10) is divided into several elementary signal plates (101), (102), (103) ... electrically independent, in order to reduce the parasitic capacity when picking up the signal on this plate. In a preferred arrangement, these elementary plates are oriented like the lines of scanning by the reading electron beam. This reading is made either by a single beam or by a number of independent beams each covering a portion of the target. Same applications as in the prior art, especially taking infrared shots.

Description

L'invention concerne une cible de prise de vues, ainsi que le tube de prise de vues muni d'une telle cible, et l'ensemble du dispositif formé par le tube et ses moyens de lecture.The invention relates to a shooting target, as well as the shooting tube provided with such a target, and the entire device formed by the tube and its reading means.

La cible de l'invention peut être de structure variée, cible photoconductrice en l'un des matériaux usuels, comme le sulfure d'antimoine (Sb2 s3), l'oxyde de plomb (Pbo), etc, ou cible à mosaïque de photodiodes-formées dans un substrat de silicium, ou cible pyroélectrique... L'invention s'applique de façon générale à toutes ces sortes de cibles utilisées à la prise de vues, sans distinction quant à leur nature.The target of the invention can be of varied structure, photoconductive target in one of the usual materials, such as antimony sulfide (Sb 2 s 3 ), lead oxide (Pbo), etc., or mosaic target photodiodes-formed in a silicon substrate, or pyroelectric target ... The invention applies generally to all these kinds of targets used for taking pictures, without distinction as to their nature.

La cible comporte sur l'une de ses faces une plaque conductrice, ou plaque signal, sur laquelle est prélevé le signal électrique correspondant aux différents points de la cible, lors du balayage point par point de l'autre face de celle-ci, par le faisceau d'électrons de lecture. Le faisceau dépose en chaque point une certaine quantité d'électrons pour compenser l'effet produit en ce point dans le substrat par le rayonnement incident. Cette quantité, lue dans le circuit de la plaque signal, constitue le signal du point.The target has on one of its faces a conductive plate, or signal plate, from which the electrical signal corresponding to the different points of the target is sampled, during point-to-point scanning of the other face thereof, by the reading electron beam. The beam deposits at each point a certain quantity of electrons to compensate for the effect produced at this point in the substrate by the incident radiation. This quantity, read in the circuit of the signal plate, constitutes the signal of the point.

L'un des problèmes rencontrés dans la technique de ces cibles, et dans celle de la prise de vues en général, est celui du bruit inhérent à ces systèmes, bruit provenant de causes diverses, et de la cible elle-même notamment.One of the problems encountered in the technique of these targets, and in that of shooting in general, is that of the noise inherent in these systems, noise coming from various causes, and of the target itself in particular.

Or il apparaît que la capacité entre la plaque signal et la masse du système est l'une des causes de ce bruit.However, it appears that the capacity between the signal plate and the earth of the system is one of the causes of this noise.

La présente invention a pour objet une cible présentant une capacité de plaque signal réduite.The present invention relates to a target having a reduced signal plate capacity.

L'invention sera mieux comprise en se reportant à la description qui suit et aux figures jointes qui représentent :

  • - figure 1 : une vue schématique d'un dispositif de prise de vues de l'art antérieur ;
  • - figure 2 : un schéma électrique équivalent se rapportant au dispositif de la figure précédente ;
  • - figure 3 : une vue en perspective d'une cible de l'invention ;
  • - figures 4 et 5 : des schémas montrant deux des systèmes de commutation utilisés dans les dispositifs de prise de vues de l'invention.
The invention will be better understood by referring to the description which follows and to the attached figures which represent:
  • - Figure 1: a schematic view of a shooting device of the prior art;
  • - Figure 2: an equivalent electrical diagram relating to the device of the previous figure;
  • - Figure 3: a perspective view of a target of the invention;
  • - Figures 4 and 5: diagrams showing two of the switching systems used in the picture taking devices of the invention.

Ci-dessous est donnée la description générale d'un dispositif de prise de vues de l'art antérieur, représenté schématiquement sur la figure 1. On distingue sur cette figure la cible 1 et ses deux parties constitutives, à savoir la cible proprement dite 10, consistant en une plaquette d'un matériau photosensible, et, appliquée sur l'une des faces de cette plaquette, la plaque signal 11, sur laquelle, comme on l'a dit, sont prélevés, en fonctionnement, les signaux des différents points de la cible. Le rayonnement incident arrive de la droite de la figure, du côté de la plaque signal, qui présente une bonne transparence à ce rayonnement, représenté par la flèche ondulée.Below is given the general description of a prior art camera, shown schematically in Figure 1. In this figure we distinguish the target 1 and its two constituent parts, namely the target itself 10 , consisting of a plate of a photosensitive material, and, applied to one of the faces of this plate, the signal plate 11, from which, as we have said, the signals from the different points are taken in operation of the target. The incident radiation arrives from the right of the figure, on the side of the signal plate, which has good transparency to this radiation, represented by the wavy arrow.

On distingue d'autre part sur la figure, le tube de prise de vues, désigné dans son ensemble par le repère 2, et dont l'enveloppe à vide porte le repère 20. A l'intérieur de celle-ci une cathode 21 fournit, en fonctionnement, un faisceau d'électrons, e (flèche coudée), dirigé vers la cible et balayant, comme il est connu de la technique, la cible en question point par point ; les moyens utilisés à la déviation du faisceau pour assurer ce balayage n'ont pas été représentés sur cette vue schématique comme connus de la technique. Une grille 22 placée devant la cible est reliée à la source de tension UG.On the other hand, there is a distinction between the picture tube, designated as a whole by the reference 2, and the vacuum envelope of which bears the reference 20. Inside thereof a cathode 21 provides , in operation, an electron beam, e (bent arrow), directed towards the target and scanning, as is known in the art, the target in question point by point; the means used to beam deflection to ensure this scanning have not been shown in this schematic view as known in the art. A grid 22 placed in front of the target is connected to the voltage source U G.

On distingue enfin sur la figure 1, le préamplificateur 3, à la sortie duquel est recueilli le signal, vidéo par exemple, de la cible.Finally, in FIG. 1, a distinction is made between the preamplifier 3, at the output of which the signal, for example video, of the target is collected.

Dans une disposition courante, qui sera prise comme exemple pour fixer les idées, la plaque signal est polarisée par rapport à la masse par la source de tension VC, ou tension de cible, par l'intermédiaire d'une résistance de polarisation Rp de 5 MQ. Le préamplificateur 3, à faible résistance d'entrée, comporte deux étages dont le premier est constitué, dans l'exemple, par un transistor à effet de champ à jonction 30, à bas niveau de bruit, dont la source et le drain sont représentés en S et D respectivement, et la grille en G ; le second étage consiste en un amplificateur opérationnel 31, dont la sortie A est celle du dispositif de lecture. La plaque signal, 11 est reliée au transistor par une capacité de liaison CL de l'ordre de 10 nanofarads. La boucle 40 comporte une résistance RF de l'ordre de quelques mégohms ; le drain du transistor à effet de champ 30 est polarisé par rapport à la masse par la source de tension V et la résistance RL.In a current arrangement, which will be taken as an example to fix ideas, the signal plate is polarized with respect to ground by the voltage source V C , or target voltage, by means of a bias resistor Rp of 5 MQ. The preamplifier 3, with low input resistance, comprises two stages, the first of which is constituted, in the example, by a field effect transistor with junction 30, at low noise level, the source and the drain of which are represented in S and D respectively, and the grid in G; the second stage consists of an operational amplifier 31, the output A of which is that of the reading device. The signal plate 11 is connected to the transistor by a connection capacity C L of the order of 10 nanofarads. The loop 40 includes a resistance R F of the order of a few megohms; the drain of the field effect transistor 30 is polarized with respect to ground by the voltage source V and the resistance R L.

La figure 2 donne le schéma électrique équivalent du dispositif objet de la figure 1, pour la composante alternative du courant de cible i (flèche de gauche) parcourant le dispositif. Sur cette figure, Cp représente la capacité parasite de la plaque signal (repère 11 sur la vue d'ensemble de la figure précédente) et qui est de l'ordre de 8 picofarads dans l'exemple, c'est-à-dire la capacité entre la plaque signal en question et la masse, et celle des connexions par rapport à la même masse. La capacité CL de la figure précédente ntest pas représentée, car, pour l'alternatif, elle est équivalente à un court-circuit ; CS et CD désignent sur la figure les capacités de la grille du transistor à jonction par rapport à la source et au drain de celui-ci respectivement, de 2,5 et 1,5 picofarads ; le repère g représente la transconductance du transistor à jonction ; Vg représente la composante alternative de la tension au niveau de la grille du transistor.Figure 2 gives the equivalent electrical diagram of the device object of Figure 1, for the AC component of the target current i (left arrow) flowing through the device. In this figure, C p represents the parasitic capacitance of the signal plate (reference 11 on the overview of the previous figure) and which is of the order of 8 picofarads in the example, that is to say the capacity between the signal plate in question and the mass, and that connections with respect to the same ground. The capacitance C L of the previous figure n t is not represented, because for the alternative, it is equivalent to a short circuit; C S and C D denote in the figure the capacities of the gate of the junction transistor with respect to the source and the drain thereof, of 2.5 and 1.5 picofarads respectively; the mark g represents the transconductance of the junction transistor; V g represents the AC component of the voltage at the gate of the transistor.

En pratique, parmi les sources de bruit importantes de dispositifs de ce genre, on peut citer le bruit Schottky associé au courant de cible, d'autant plus faible que le courant de cible est faible, le bruit thermique associé aux résistances Rp et RF, d'autant plus faible que ces résistances sont élevées, et le bruit associé à la tension de bruit en du transistor à jonction. Le bruit àssocié à la cible, bruit de génération et de recombinaison dans le cas d'une cible à semiconducteur, bruit thermique dans le cas d'une cible pyroélectrique, est en général négligeable devant les autres sources de bruit. Est également négligeable le courant de bruit associé au premier étage dans le cas d'un transistor à effet de champ à jonction.In practice, among the significant noise sources of devices of this kind, one can cite the Schottky noise associated with the target current, the lower the lower the target current, the thermal noise associated with the resistors R p and R F , the lower as these resistances are high, and the noise associated with the noise voltage at the junction transistor. The noise associated with the target, generation and recombination noise in the case of a semiconductor target, thermal noise in the case of a pyroelectric target, is generally negligible compared to the other noise sources. The noise current associated with the first stage is also negligible in the case of a junction field effect transistor.

On peut montrer cependant que, dans son ensemble, le bruit d'un tel dispositif est équivalent à un courant de bruit de cible que l'on désignera par ia et d'expression :

Figure imgb0001
où CT est égale à la somme des capacités parasites et où en désigne la tension de bruit du premier étage, c'est-à-dire du transistor à effet de champ dans l'exemple. On a CT = Cp + Cs + CD ; dans cette formule, B désigne la bande passante du dispositif, proportionnelle à la fréquence image et au nombre de points de la cible, c'est-à-dire à la résolution. Le courant iB est de l'ordre de quelques centaines de picoampères.It can however be shown that, as a whole, the noise of such a device is equivalent to a target noise current which will be designated by i a and of expression:
Figure imgb0001
where C T is equal to the sum of the stray capacitances and where denotes the noise voltage of the first stage, that is to say of the field effect transistor in The example. We have C T = Cp + C s + C D ; in this formula, B denotes the bandwidth of the device, proportional to the image frequency and to the number of points of the target, that is to say to the resolution. The current i B is of the order of a few hundred picoamps.

On voit sur l'expression (1) que le bruit de cible iB est en raison directe, de la capacité totale CT. Pour un premier étage donné, c'est-à-dire en, CS et CD donnés et à bande passante B donnée, le bruit est d'autant plus faible que la capacité parasite Cp est plus faible.We see on expression (1) that the target noise i B is a direct reason, of the total capacity C T. For a given first stage, that is to say e n , C S and C D given and with given bandwidth B, the noise is lower when the parasitic capacitance C p is lower.

Selon l'invention la diminution de la capacité C est obtenue par fractionnement de la plaque signal en plusieurs parties, électriquement isolées les unes des autres, dans les conditions qui vont être précisées.According to the invention, the reduction in capacity C is obtained by splitting the signal plate into several parts, electrically isolated from each other, under the conditions which will be specified.

Pour fixer les idées on a raisonné dans ce qui précède sur un premier étage du préamplificateur constitué par un transistor à effet de champ à jonction.To fix the ideas we reasoned in the above on a first stage of the preamplifier constituted by a field effect transistor with junction.

La conclusion précédente reste valable, de façon générale, pour tout dispositif de prise de vues utilisant une cible dont le signal est prélevé par une plaque signal, quelle que soit la structure de l'étage préamplificateur auquel elle est reliée. Toutes choses étant égales, le bruit de cible diminue avec la capacité de la plaque signal.The preceding conclusion remains valid, in general, for any device for taking pictures using a target whose signal is taken by a signal plate, whatever the structure of the preamplifier stage to which it is connected. All other things being equal, the target noise decreases with the capacity of the signal plate.

La figure 3 montre en perspective une cible de l'invention désignée globalement par le repère 1, comme sur la figure 1, et composée comme dans le cas de cette figure de la cible proprement dite 10 et de la plaque signal. Cette dernière porte le repère 110 et diffère de celle de la figure 1 par le fait que, dans l'invention, elle est constituée de plusieurs parties séparées, isolées électriquement les unes des autres comme le montre le dessin, et auxquelles on a donné les repères 101, 102, 103 ... ; sur la figure, pour la clarté, les proportions des éléments, en particulier leurs épaisseurs, n'ont pas été respectées.Figure 3 shows in perspective a target of the invention generally designated by the reference 1, as in Figure 1, and composed as in the case of this figure of the target itself 10 and the signal plate. The latter bears the reference 110 and differs from that of FIG. 1 in that, in the invention, it is made up of several separate parts, electrically isolated from each other as shown in the drawing, and to which the references 101, 102, 103 have been given; in the figure, for clarity, the proportions of the elements, in particular their thicknesses, have not been respected.

Les différentes portions de la plaque signal de la cible de l'invention, ou plaques élémentaires, peuvent avoir une orientation quelconque par rapport à la direction du balayage de la cible par le faisceau de lecture ; toutefois, dans un mode préféré de réalisation de l'invention, elles sont disposées parallèlement à la direction de ce balayage.The different portions of the target signal plate of the invention, or elementary plates, can have any orientation with respect to the direction of scanning of the target by the reading beam; however, in a preferred embodiment of the invention, they are arranged parallel to the direction of this scan.

La plaque signal est ainsi fractionnée en p plaques signal élémentaires ; p est égal à ― , N étant le nombre de lignes du balayage, de télévision par exemple, et n le nombre de lignes de ce balayage disposées vis-à-vis de la plaque signal élémentaire considérée. La capacité C précédente est divisée par p. Il va sans dire que la valeur maximale de p est N, c'est-à-dire le nombre de lignes du balayage ; dans ce cas il y a autant de plaques élémentaires que de lignes de balayage.The signal plate is thus divided into p elementary signal plates; p is equal to -, N being the number of lines of the scan, for example of television, and n the number of lines of this scan arranged opposite the elementary signal plate considered. The previous capacity C is divided by p. It goes without saying that the maximum value of p is N, that is to say the number of lines of the scan; in this case there are as many elementary plates as there are scanning lines.

Chacune des plaques signal élémentaires est reliée à un préamplificateur. Un système de commutation permet de commuter à chaque instant la sortie du dispositif de lecture au préamplificateur associé à la plaque signal élémentaire qui reçoit le faisceau de lecture, ou d'analyse, unique, suivant les techniques d'adressage connues. Les p préamplificateurs ainsi que le registre d'adressage peuvent être, suivant les cas, à l'intérieur ou à l'extérieur du tube de prise de vues, qui comporte le nombre de sorties correspondantes.Each of the elementary signal plates is connected to a preamplifier. A switching system makes it possible to switch at all times the output of the reading device to the preamplifier associated with the elementary signal plate which receives the single reading or analysis beam, according to known addressing techniques. The p preamplifiers as well as the addressing register can be, depending on the case, inside or outside the camera tube, which has the corresponding number of outputs.

Le schéma d'un tel système de commutation est donné en figure 4 ; les plaques signal élémentaires au nombre de quatre sont représentées par les rectangles sans repères ; chacune couvre sur la cible, dans l'exemple, la surface de cinq lignes de balayage (traits interrompus). Les p préamplificateurs, limités à quatre dans l'exemple, pl, P2, P3, P4, sont connectés séquentiellement à la sortie A de l'amplificateur de sortie a par des transistors de commutation t1, t2, t3, t4. Un registre d'adressage R, dont le balayage est synchrone du balayage de la cible par le faisceau de lecture, permet l'adressage séquentiel des grilles des transistors.The scheme of such a switching system is given in Figure 4; four elementary nameplates are represented by rectangles without markers; each covers on the target, in the example, the surface of five scanning lines (broken lines). The p preamplifiers, limited to four in the example, p l , P 2 , P 3 , P 4 , are connected sequentially to the output A of the output amplifier a by switching transistors t 1 , t 2 , t 3 , t 4 . An address register R, the scanning of which is synchronous with the scanning of the target by the reading beam, allows the sequential addressing of the gates of the transistors.

La réalisation des cibles de l'invention et de leur dispositif dé lecture peut s'effectuer de diverses manières, que l'on peut classer en deux catégories, à intégration totale ou hybride ; dans la première, les préamplificateurs sont intégrés sur le même substrat que la cible. Cependant, dans l'état actuel de la technique des circuits intégrés, il est difficile d'obtenir de très faibles niveaux de bruit. La plus faible tension de bruit d'un amplificateur opérationnel intégré est, en nanovolts, 4 . √B, B étant la bande passante mesurée en hertz. C'est pourquoi on préférera la réalisation type bybride pour les cibles de l'invention, dans laquelle les préamplificateurs sont réalisés sous forme de "puces" séparées collées sur un substrat commun, qui peut être la fenêtre du tube de prise de vues, c'est-à-dire la partie de son enveloppe exposée aux rayonnements incidents : face terminale de droite de cette enveloppe sur la figure 1The targets of the invention and their reading device can be produced in various ways, which can be classified into two categories, fully integrated or hybrid; in the first, the preamplifiers are integrated on the same substrate as the target. However, in the current state of the art of integrated circuits, it is difficult to obtain very low noise levels. The lowest noise voltage of an integrated operational amplifier is, in nanovolts, 4. √B, B being the bandwidth measured in hertz. This is why we will prefer the bybride type embodiment for the targets of the invention, in which the preamplifiers are produced in the form of separate "chips" bonded to a common substrate, which may be the window of the shooting tube, c that is to say the part of its envelope exposed to incident radiation: right-hand end face of this envelope in FIG. 1

La lecture de la cible de l'invention, à plaque signal fractionnée en plusieurs plaques-signal élémentaires, peut se faire au moyen de plusieurs faisceaux de lecture, chacun de ceux-ci étant utilisé pour lire les lignes situées vis-à-vis d'une plaque ou d'un groupe de plaques élémentaires. Soit k le nombre de plaques élémentaires par groupe ; k est un sous- multiple de p, au maximum égal à p, ce qui correspond au cas d'un faisceau de lecture unique envisagé plus haut, et au minimum égal à 1, ce qui correspond à un faisceau d'analyse par plaque élémentaire. Dans la situation intermédiaire il y a

Figure imgb0002
faisceaux d'analyse. Chacun des P k faisceaux de lecture analyse en parallèle les k plaques signal élémentaires du groupe.Reading of the target of the invention, with a signal plate divided into several elementary signal plates, can be done by means of several reading beams, each of these being used to read the lines located opposite a plate or a group of elementary plates. Let k be the number of elementary plates per group; k is a sub-multiple of p, at most equal to p, which corresponds to the case of a single reading beam considered above, and at least equal to 1, which corresponds to an analysis beam per elementary plate . In the intermediate situation there is
Figure imgb0002
analysis beams. Each of the P k reading beams analyzes in parallel the k elementary signal plates of the group.

Dans ce cas on utilise, pour la lecture, un dispositif de commutation par faisceau d'analyse, permettant de connecter séquentiellement à chacune des sorties du tube les k préamplificateurs associés à chacune des k plaques du groupe.In this case, a device for switching by analysis beam is used for reading, making it possible to connect sequentially to each of the outputs of the tube the k preamplifiers associated with each of the k plates of the group.

Les p k faisceaux d'électrons nécessaires sont obtenus, soit à partir d'une cathode unique et une optique électronique permettant de diviser le faisceau émis en p k faisceaux élémentaires, ou un système de diaphragmes disposés au voisinage immédiat de la cathode, soit à partir de p k cathodes élémentaires. Eventuellement les moyens de focalisation et de déviation verticale et horizontale sont communs à tous les faisceaux élémentaires.The pk electron beams required are obtained either from a single cathode and an electronic optic making it possible to divide the emitted beam into pk elementary beams, or a system of diaphragms arranged in the immediate vicinity of the cathode, or from pk elementary cathodes. Possibly the means of focusing and vertical and horizontal deflection are common to all the elementary beams.

La figure 5 montre le schéma de commutation dans ce cas ; les plaques signal élémentaires, représentées par les rectangles,six dans l'exemple, de la gauche de la figure, couvrent l'espace de n lignes du balayage qui en comporte en tout N ; dans l'exemple n = 5 et N = 30. Un même faisceau de lecture est utilisé pour un groupe de trois plaques signal élémentaires : on a k = 3 ; les préamplificateurs ont les repères p1, p10, p11 et p2' p20' p21 ; la figure ne montre que deux de ces groupes, auxquels correspondent les deux registres d'adressage rI et r2 et les deux sorties A1 et A2, correspondant chacune à un groupe de trois transistors, montés comme dans l'exemple de la figure 4, et sans repères pour la clarté.Figure 5 shows the switching scheme in this case; the elementary signal plates, represented by the rectangles, six in the example, from the left of the figure, cover the space of n lines of the scan which comprises in all N; in the example n = 5 and N = 30. The same reading beam is used for a group of three elementary signal plates: on ak = 3; the preamplifiers have the references p 1 , p 10 , p 11 and p 2 ' p 20' p 21 ; the figure shows only two of these groups, to which correspond the two address registers r I and r 2 and the two outputs A 1 and A 2 , each corresponding to a group of three transistors, mounted as in the example in FIG. 4, and without markers for clarity.

L'intérêt de recourir à plusieurs faisceaux d'analyse ressort de ce qui suit.The advantage of using several beams of analysis is apparent from the following.

Dans un permier type d'utilisation, on adopte une vitesse de balayage des

Figure imgb0003
faisceaux élémentaires identique à la vitesse de balayage dans le cas d'un seul faisceau (bande passante inchangée). La période trame est alors T' =
Figure imgb0004
où T est la période trame dans le cas d'un seul faisceau ; T' représente la durée séparant deux analyses successives d'un même point. Cette réduction de la période trame dans un rapport
Figure imgb0005
est favorable notamment à la lecture d'une cible pyroélectrique dans laquelle la résolution spatiale est limitée par la diffusion latérale de la chaleur au sein du matériau pyroélectrique ; or la longueur de diffusion est proportionnelle à la racine carré du temps d'intégration, généralement confondu avec la période trame T'.In a first type of use, a scanning speed of the
Figure imgb0003
elementary beams identical to the scanning speed in the case of a single beam (bandwidth unchanged). The frame period is then T '=
Figure imgb0004
where T is the frame period in the case of a single beam; T 'represents the duration separating two successive analyzes of the same point. This reduction of the frame period in a report
Figure imgb0005
is particularly favorable for reading a pyroelectric target in which the spatial resolution is limited by the lateral diffusion of heat within the pyroelectric material; however the diffusion length is proportional to the square root of the integration time, generally confused with the frame period T '.

Cette réduction est également favorable à la lecture d'une cible à mosaïque de détecteurs photo- voltalques, ou MIS, sensible au rayonnement infra-rouge, et où le temps d'intégration est limité par la génération due au fond continu.This reduction is also favorable for reading a mosaic target of photovoltaic detectors, or MIS, sensitive to infrared radiation, and where the integration time is limited by the generation due to the continuous background.

Dans un autre type d'utilisation, on conserve, au contraire, la période trame T ; la vitesse de balayage est alors divisée par

Figure imgb0006
, de même que la bande passante. Le signal est également divisé par
Figure imgb0007
. Par contre, puisque le temps d'analyse d'un point donné se trouve de ce fait multiplié par
Figure imgb0008
, on peut avoir la même efficacité de lecture des points de la cible avec une résistance de faisceau plus élevée d'un facteur
Figure imgb0009
, donc avec un courant de cible plus petit d'un facteur
Figure imgb0010
, la résistance de faisceau étant inversement proportionnelle au courant de cible. Le bruit Schottky associé au courant de fais- ceau proportionnel à
Figure imgb0011
(ic désignant le courant de cible et B la bande passante) est donc globalement divisé par
Figure imgb0012
, puisque i et B sont chacun séparément divisés par ce facteur. Le bruit associé au préampli-ficateur,
Figure imgb0013
, est divisé par
Figure imgb0014
à cause de la réduction de la bande passante, et par un terme supplémentaire à cause de la réduction de la capacité CT = Cp + CS + CD due au fractionnement de la plaque signal. Globalement, en conservant la période trame T et en utilisant
Figure imgb0015
faisceaux d'analyse en parallèle, on obtient donc un gain sensible du rapport signal sur bruit.In another type of use, on the contrary, the frame period T is kept; the scanning speed is then divided by
Figure imgb0006
, as well as the bandwidth. The signal is also divided by
Figure imgb0007
. On the other hand, since the analysis time for a given point is therefore multiplied by
Figure imgb0008
, you can have the same reading efficiency of the target points with a beam resistance higher by a factor
Figure imgb0009
, so with a target current more small by a factor
Figure imgb0010
, the beam resistance being inversely proportional to the target current. Schottky noise associated with the beam current proportional to
Figure imgb0011
(i c denoting the target current and B the bandwidth) is therefore globally divided by
Figure imgb0012
, since i and B are each separately divided by this factor. The noise associated with the preamplifier,
Figure imgb0013
, is divided by
Figure imgb0014
because of the reduction in bandwidth, and by an additional term because of the reduction in capacity C T = C p + C S + C D due to the splitting of the signal plate. Overall, keeping the frame period T and using
Figure imgb0015
analysis beams in parallel, we therefore obtain a significant gain in the signal to noise ratio.

Les applications de la cible de l'invention sont les mêmes que celles des cibles de l'art connu, notamment la prise de vues en infra-rouge.The applications of the target of the invention are the same as those of the targets of the known art, in particular taking infrared shots.

Claims (8)

1. Cible de prise de vues, composée d'un substrat plat et d'une plaque signal, conductrice de l'électricité, appliquée sur l'une des faces du substrat dont l'autre face est balayée point par point, en fonctionnement, par un faisceau d'électrons, qui y apporte la quantité de charges nécessaires pour compenser l'effet.produit par le rayonnement incident sur le substrat, laquelle quantité de charges, lue dans le circuit de la plaque signal, constitue le signal correspondant au point balayé, caractérisée en ce que la plaque signal est fractionnée en plusieurs plaques signal élémentaires électriquement indépendantes les unes des autres.1. Shooting target, composed of a flat substrate and a signal plate, electrically conductive, applied to one side of the substrate, the other side of which is scanned point by point, in operation, by an electron beam, which brings the quantity of charges necessary to compensate for the effect produced by the incident radiation on the substrate, which quantity of charges, read in the circuit of the signal plate, constitutes the signal corresponding to the point scanned, characterized in that the signal plate is divided into several elementary electrically independent signal plates. 2. Cible de prise de vues suivant la revendication 1, caractérisée en ce que les plaques signal élémentaires consistent en des bandes parallèles entre elles et parallèles à la direction du balayage du substrat par le faisceau d'électrons.2. A shooting target according to claim 1, characterized in that the elementary signal plates consist of bands parallel to each other and parallel to the direction of scanning of the substrate by the electron beam. 3. Cible de prise de vues suivant la revendication 2, caractérisée en ce que chacune des plaques signal fait vis-à-vis à plusieurs lignes de balayage.3. A target for taking pictures according to claim 2, characterized in that each of the signal plates faces several scanning lines. 4. Tube de prise de vues, comprenant, à l'intérieur d'une enveloppe sous vide, des moyens produisant l'émission d'électrons et une cible vers laquelle sont dirigés ces électrons, et des moyens focalisant ces électrons et les déviant de manière qu'ils produisent sur l'une des faces de la cible des impacts sensiblement ponctuels, se déplaçant d'un point à l'autre de la cible suivant un réseau de lignes et de colonnes, caractérisé en ce que la cible en question est une cible suivant la revendication 1.4. Camera tube, comprising, inside a vacuum envelope, means producing the emission of electrons and a target towards which these electrons are directed, and means focusing these electrons and deflecting them from so that they produce on one of the faces of the target substantially punctual impacts, moving from one point to the other of the target in a network of rows and columns, characterized in that the target in question is a target according to claim 1. 5. Tube de prise de vues suivant la revendication 4, caractérisé en ce que les électrons sont émis en un pinceau unique balayant successivement tous les points de la cible.5. Tube of shots according to the claims tion 4, characterized in that the electrons are emitted in a single brush sweeping successively all the points of the target. 6. Tube de prise de vues suivant la revendication 4, caractérisé en ce que les électrons sont émis en plusieurs pinceaux balayant simultanément, chacun, l'ensemble des points de la cible situés vis-à-vis d'un groupe de plaques signal élémentaires.6. An image pickup tube according to claim 4, characterized in that the electrons are emitted in several brushes, each scanning simultaneously, all of the points of the target situated opposite a group of elementary signal plates . 7. Dispositif de prise de vues, composé de : - un tube de prise de vues comprenant une cible et des moyens de balayage de l'une des faces de cette cible point par point par un pinceau d'électrons produit dans le tube et y déposant des électrons en chacun de ces points ; - un dispositif de lecture des charges circulant dans le circuit de la plaque signal recouvrant la face opposée de cette cible, caractérisé en ce que le tube de prise de vues est un tube suivant la revendication 5, et caractérisé en ce que le dispositif de lecture comprend un préamplificateur par plaque signal élémentaire et un système de commutation assurant séquentiellement la commutation de chaque préamplificateur sur la sortie unique du dispositif. 7. Camera, composed of: - an image pickup tube comprising a target and means for scanning one of the faces of this target point by point with an electron brush produced in the tube and depositing electrons therein at each of these points; - a device for reading the charges circulating in the circuit of the signal plate covering the opposite face of this target, characterized in that the image pickup tube is a tube according to claim 5, and characterized in that the reading device includes a preamplifier by elementary signal plate and a switching system ensuring sequentially the switching of each preamplifier to the single output of the device. 8. Dispositif de prise de vues, composé de : - un tube de prise de vues comprenant une cible et des moyens de balayage de l'une des faces de cette cible point par point par un pinceau d'électrons produit dans le tube et y déposant des électrons en chacun de ces points ; - dispositif de lecture des charges circulant dans le circuit de la plaque signal recouvrant la face opposée de cette cible, caractérisé en ce que le tube de prise de vues est un tube suivant la revendication 6, et caractérisé en ce que le dispositif de lecture comprend un préamplificateur par plaque signal élémentaire et autant de systèmes de commutation qu'il y a de groupes de plaques signal élémentaires, chaque système assurant séquentiellement la commutation de chaque préamplificateur à une sortie du dispositif commune aux plaques d'un même groupe. 8. Camera, composed of: - an image pickup tube comprising a target and means for scanning one of the faces of this target point by point with an electron brush produced in the tube and depositing electrons therein at each of these points; - device for reading the charges circulating in the circuit of the signal plate covering the opposite face of this target, characterized in that the image pickup tube is a tube according to claim 6, and characterized in that the reading device comprises a preamplifier for each signal plate and as many switching systems as there are groups of elementary signal plates, each system sequentially ensuring the switching of each preamplifier at an output of the device common to the plates of the same group.
EP80400696A 1979-05-29 1980-05-20 Pick-up target, tube provided with such a target and pick-up device comprising such a tube Withdrawn EP0020234A1 (en)

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FR7913631A FR2458141A1 (en) 1979-05-29 1979-05-29 SHOOTING TARGET, TUBE PROVIDED WITH SUCH TARGET, AND SHOOTING DEVICE COMPRISING SUCH A TUBE
FR7913631 1979-05-29

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2920137A (en) * 1957-03-15 1960-01-05 Garbuny Max Apparatus for reducing spurious signals in thermal image converters
GB884362A (en) * 1957-03-15 1961-12-13 Emi Ltd Improvements relating to pick-up devices for colour television
FR2341242A1 (en) * 1976-02-11 1977-09-09 Philips Nv TELEVISION CAMERA AND RECORDER TUBE SUITABLE FOR THIS TUBE

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Publication number Priority date Publication date Assignee Title
US3889117A (en) * 1971-04-29 1975-06-10 Cincinnati Electronics Corp Tapered detector scanning array system
US4117515A (en) * 1976-12-24 1978-09-26 U.S. Philips Corporation Television camera having signal electrode strips
US4139444A (en) * 1977-12-12 1979-02-13 North American Philips Corporation Method of reticulating a pyroelectric vidicon target

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2920137A (en) * 1957-03-15 1960-01-05 Garbuny Max Apparatus for reducing spurious signals in thermal image converters
GB884362A (en) * 1957-03-15 1961-12-13 Emi Ltd Improvements relating to pick-up devices for colour television
FR2341242A1 (en) * 1976-02-11 1977-09-09 Philips Nv TELEVISION CAMERA AND RECORDER TUBE SUITABLE FOR THIS TUBE

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