DK4014290T3 - Indstillelig vcsel med kombineret forstærkning og dbr spejl - Google Patents

Indstillelig vcsel med kombineret forstærkning og dbr spejl Download PDF

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Publication number
DK4014290T3
DK4014290T3 DK20765122.5T DK20765122T DK4014290T3 DK 4014290 T3 DK4014290 T3 DK 4014290T3 DK 20765122 T DK20765122 T DK 20765122T DK 4014290 T3 DK4014290 T3 DK 4014290T3
Authority
DK
Denmark
Prior art keywords
dbr mirror
combined gain
vcsel
adjustable
adjustable vcsel
Prior art date
Application number
DK20765122.5T
Other languages
English (en)
Inventor
Mark E Kuznetsov
Peter S Whitney
Bartley C Johnson
Original Assignee
Excelitas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Excelitas Tech Corp filed Critical Excelitas Tech Corp
Application granted granted Critical
Publication of DK4014290T3 publication Critical patent/DK4014290T3/da

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DK20765122.5T 2019-08-15 2020-08-14 Indstillelig vcsel med kombineret forstærkning og dbr spejl DK4014290T3 (da)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962887332P 2019-08-15 2019-08-15
US202062962367P 2020-01-17 2020-01-17
PCT/US2020/046413 WO2021030704A1 (en) 2019-08-15 2020-08-14 Tunable vcsel with combined gain and dbr mirror

Publications (1)

Publication Number Publication Date
DK4014290T3 true DK4014290T3 (da) 2024-02-05

Family

ID=72322524

Family Applications (1)

Application Number Title Priority Date Filing Date
DK20765122.5T DK4014290T3 (da) 2019-08-15 2020-08-14 Indstillelig vcsel med kombineret forstærkning og dbr spejl

Country Status (4)

Country Link
US (2) US20210050712A1 (da)
EP (1) EP4014290B1 (da)
DK (1) DK4014290T3 (da)
WO (1) WO2021030704A1 (da)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA3198832A1 (en) 2020-10-14 2022-04-21 Excelitas Technologies Corp. Tunable vcsel with strain compensated semiconductor dbr
US20220173317A1 (en) * 2020-11-03 2022-06-02 Srinivasan Krishnamurthy Bright entangled photon sources
US20220311213A1 (en) 2021-03-29 2022-09-29 Excelitas Technologies Corp. Tunable VCSEL polarization control with intracavity subwavelength grating

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5052016A (en) * 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
US6661830B1 (en) * 2002-10-07 2003-12-09 Coherent, Inc. Tunable optically-pumped semiconductor laser including a polarizing resonator mirror
US9106053B2 (en) * 2012-10-15 2015-08-11 Palo Alto Research Center Incorporated Distributed feedback surface emitting laser
US20140176958A1 (en) 2012-12-21 2014-06-26 Axsun Technologies, Inc. OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source
US10951007B2 (en) 2018-05-11 2021-03-16 Excelitas Technologies Corp. Optically pumped tunable VCSEL employing geometric isolation

Also Published As

Publication number Publication date
EP4014290A1 (en) 2022-06-22
US20210050712A1 (en) 2021-02-18
WO2021030704A1 (en) 2021-02-18
US20230208107A1 (en) 2023-06-29
EP4014290B1 (en) 2023-11-08

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