DK199901642A - Method of depositing layers on a substrate - Google Patents
Method of depositing layers on a substrateInfo
- Publication number
- DK199901642A DK199901642A DK199901642A DKPA199901642A DK199901642A DK 199901642 A DK199901642 A DK 199901642A DK 199901642 A DK199901642 A DK 199901642A DK PA199901642 A DKPA199901642 A DK PA199901642A DK 199901642 A DK199901642 A DK 199901642A
- Authority
- DK
- Denmark
- Prior art keywords
- substrate
- depositing layers
- depositing
- layers
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DK199901642A DK173655B1 (en) | 1999-11-15 | 1999-11-15 | Method of depositing layers on a substrate |
AU13822/01A AU1382201A (en) | 1999-11-15 | 2000-11-15 | A method for depositing layers on a substrate |
PCT/DK2000/000634 WO2001036708A1 (en) | 1999-11-15 | 2000-11-15 | A method for depositing layers on a substrate |
EP00975836A EP1248866A1 (en) | 1999-11-15 | 2000-11-15 | A method for depositing layers on a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DK199901642A DK173655B1 (en) | 1999-11-15 | 1999-11-15 | Method of depositing layers on a substrate |
DK164299 | 1999-11-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
DK199901642A true DK199901642A (en) | 2001-05-16 |
DK173655B1 DK173655B1 (en) | 2001-05-28 |
Family
ID=8106816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK199901642A DK173655B1 (en) | 1999-11-15 | 1999-11-15 | Method of depositing layers on a substrate |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1248866A1 (en) |
AU (1) | AU1382201A (en) |
DK (1) | DK173655B1 (en) |
WO (1) | WO2001036708A1 (en) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4060660A (en) * | 1976-01-15 | 1977-11-29 | Rca Corporation | Deposition of transparent amorphous carbon films |
JPS6092477A (en) * | 1983-10-27 | 1985-05-24 | Matsushita Electric Ind Co Ltd | Chemical treatment device using plasma |
US4681653A (en) * | 1984-06-01 | 1987-07-21 | Texas Instruments Incorporated | Planarized dielectric deposited using plasma enhanced chemical vapor deposition |
FR2584101B1 (en) * | 1985-06-26 | 1987-08-07 | Comp Generale Electricite | DEVICE FOR MANUFACTURING AN OPTICAL COMPONENT WITH A REFRACTION INDEX GRADIENT |
FR2653633B1 (en) * | 1989-10-19 | 1991-12-20 | Commissariat Energie Atomique | CHEMICAL TREATMENT DEVICE ASSISTED BY A DIFFUSION PLASMA. |
JPH0710689A (en) * | 1993-06-17 | 1995-01-13 | Furukawa Electric Co Ltd:The | Device for growth of semiconductor in gaseous phase |
US5763020A (en) * | 1994-10-17 | 1998-06-09 | United Microelectronics Corporation | Process for evenly depositing ions using a tilting and rotating platform |
-
1999
- 1999-11-15 DK DK199901642A patent/DK173655B1/en not_active IP Right Cessation
-
2000
- 2000-11-15 WO PCT/DK2000/000634 patent/WO2001036708A1/en not_active Application Discontinuation
- 2000-11-15 AU AU13822/01A patent/AU1382201A/en not_active Abandoned
- 2000-11-15 EP EP00975836A patent/EP1248866A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
AU1382201A (en) | 2001-05-30 |
EP1248866A1 (en) | 2002-10-16 |
WO2001036708A1 (en) | 2001-05-25 |
DK173655B1 (en) | 2001-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B1 | Patent granted (law 1993) | ||
PBP | Patent lapsed |
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