DK152059C - PROCEDURE FOR PREPARING A CONTINUOUS CRYSTALLIAN BAND FROM A MELT - Google Patents

PROCEDURE FOR PREPARING A CONTINUOUS CRYSTALLIAN BAND FROM A MELT

Info

Publication number
DK152059C
DK152059C DK076775A DK76775A DK152059C DK 152059 C DK152059 C DK 152059C DK 076775 A DK076775 A DK 076775A DK 76775 A DK76775 A DK 76775A DK 152059 C DK152059 C DK 152059C
Authority
DK
Denmark
Prior art keywords
crystallian
melt
preparing
band
procedure
Prior art date
Application number
DK076775A
Other languages
Danish (da)
Other versions
DK76775A (en
DK152059B (en
Inventor
Jean-Jacques Lucien Em Brissot
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of DK76775A publication Critical patent/DK76775A/da
Publication of DK152059B publication Critical patent/DK152059B/en
Application granted granted Critical
Publication of DK152059C publication Critical patent/DK152059C/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK076775A 1974-03-01 1975-02-26 PROCEDURE FOR PREPARING A CONTINUOUS CRYSTALLIAN BAND FROM A MELT DK152059C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7407044 1974-03-01
FR7407044A FR2262554B1 (en) 1974-03-01 1974-03-01

Publications (3)

Publication Number Publication Date
DK76775A DK76775A (en) 1975-11-03
DK152059B DK152059B (en) 1988-01-25
DK152059C true DK152059C (en) 1988-07-11

Family

ID=9135672

Family Applications (1)

Application Number Title Priority Date Filing Date
DK076775A DK152059C (en) 1974-03-01 1975-02-26 PROCEDURE FOR PREPARING A CONTINUOUS CRYSTALLIAN BAND FROM A MELT

Country Status (8)

Country Link
JP (1) JPS5443997B2 (en)
BE (1) BE826094A (en)
DE (1) DE2508651C3 (en)
DK (1) DK152059C (en)
FR (1) FR2262554B1 (en)
GB (1) GB1490114A (en)
IT (1) IT1033277B (en)
NL (1) NL7502202A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
US4225378A (en) * 1978-12-27 1980-09-30 Burroughs Corporation Extrusion mold and method for growing monocrystalline structures
DE3366718D1 (en) * 1983-02-09 1986-11-13 Commissariat Energie Atomique Method of producing plates of metallic or semiconducting material by moulding without direct contact with the walls of the mould
JP3875314B2 (en) * 1996-07-29 2007-01-31 日本碍子株式会社 Silicon crystal plate growth method, silicon crystal plate growth apparatus, silicon crystal plate, and solar cell element manufacturing method
US10960659B2 (en) 2014-07-02 2021-03-30 Rotoprint Sovrastampa S.R.L. System and method for overprinting on packages and/or containers of different formats

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7004876A (en) * 1970-04-04 1971-10-06
US3759671A (en) * 1971-10-15 1973-09-18 Gen Motors Corp Horizontal growth of crystal ribbons

Also Published As

Publication number Publication date
DK76775A (en) 1975-11-03
FR2262554B1 (en) 1977-06-17
IT1033277B (en) 1979-07-10
NL7502202A (en) 1975-09-03
DE2508651C3 (en) 1981-09-17
DK152059B (en) 1988-01-25
DE2508651A1 (en) 1975-09-25
FR2262554A1 (en) 1975-09-26
JPS50126164A (en) 1975-10-03
GB1490114A (en) 1977-10-26
JPS5443997B2 (en) 1979-12-22
BE826094A (en) 1975-08-27
DE2508651B2 (en) 1980-09-18

Similar Documents

Publication Publication Date Title
DK392675A (en) PROCEDURE FOR MAKING SUBSTITUTED PURINS
DK487475A (en) PROCEDURE FOR PREPARING WATER-EVENING POLYALKYLENOXIDE
DK158614C (en) PROCEDURE FOR PREPARING A DIHALOGENEVINYLYCYCLOPROPANCARBOXYLATE
DK222375A (en) PROCEDURE FOR MAKING ALKYL-TERT BUTYLETHERS
DK258775A (en) PROCEDURE FOR MAKING A TEA PRODUCT
DK558975A (en) PROCEDURE FOR PREPARING POLYCARBONATES
DK292475A (en) PROCEDURE FOR PREPARING 3-AMINO-2-HYDROXY-1-PHENOXY-PROPANE DERIVATIVES
DK250175A (en) PROCEDURE FOR MAKING N-CYCLOALKYLMETHYLDECAHYDROISOQUINO LINER
DK351875A (en) PROCEDURE FOR PREPARING 7-METHOXY-6-THIATETRACYLINES
SE402091B (en) APPARATUS FOR ADJUSTING A WOVEN BAND
DK380379A (en) PROCEDURE FOR PREPARING A PURIFIED AMMONIUM MOLYBDATE SOLUTION FROM TECHNICAL MOLYBDENT TRYOXIDE
DK151993C (en) PROCEDURE FOR RECOVERING LEAD FROM USED LEAD CUMULATORS
DK223175A (en) PROCEDURE FOR PREPARING PYRIDOBENZODIAZEPINONS
DK152059C (en) PROCEDURE FOR PREPARING A CONTINUOUS CRYSTALLIAN BAND FROM A MELT
DK591275A (en) PROCEDURE FOR MAKING A GRAPHITABLE CARBON FIBER
DK154890C (en) PROCEDURE FOR PREPARING 7BETA-ACYLAMINO-7ALFA-ALCOXYCEPHALOSPORINES
DK547675A (en) PROCEDURE FOR MAKING 6-METHYL-8BETA-SUBSTITUTED METHYLERGOLINS
DK139094C (en) PROCEDURE FOR PREPARING A SOLDERING MATERIAL
DK137539B (en) PROCEDURE FOR MAKING 11BETA-FLUORO-4-ANDROSTEN-3-ONERS
DK554575A (en) PROCEDURE FOR MAKING ORGANOTIN COMPOUNDS
DK159266C (en) PROCEDURE FOR PREPARING SUBSTITUTED AMIDE COMPOUNDS
DK442975A (en) PROCEDURE FOR THE PREPARATION OF A SULFUR-CONTAINING PYRIDINE DERIVATIVE
DK141748C (en) ANALOGY PROCEDURE FOR PREPARING A 4-ETHYNYLBIPHENYL DERIVATIVE
DK535175A (en) PROCEDURE FOR MAKING CHROMON COMPOUNDS
DK149366C (en) PROCEDURE FOR MANUFACTURING YARN FROM ANGORACANIN WOULD

Legal Events

Date Code Title Description
AHS Application shelved for other reasons than non-payment
PBP Patent lapsed