DK119985B - Fremgangsmåde til fremstilling af halvlederelementer, såsom transistører og dioder. - Google Patents

Fremgangsmåde til fremstilling af halvlederelementer, såsom transistører og dioder.

Info

Publication number
DK119985B
DK119985B DK283364AA DK283364A DK119985B DK 119985 B DK119985 B DK 119985B DK 283364A A DK283364A A DK 283364AA DK 283364 A DK283364 A DK 283364A DK 119985 B DK119985 B DK 119985B
Authority
DK
Denmark
Prior art keywords
diodes
transistors
semiconductor elements
manufacturing semiconductor
manufacturing
Prior art date
Application number
DK283364AA
Other languages
English (en)
Inventor
W Steinmaier
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of DK119985B publication Critical patent/DK119985B/da

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H10P14/24—
    • H10P14/271—
    • H10P14/2905—
    • H10P14/3411—
    • H10W74/43—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/943—Movable

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
DK283364AA 1963-06-10 1964-06-06 Fremgangsmåde til fremstilling af halvlederelementer, såsom transistører og dioder. DK119985B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL293863 1963-06-10

Publications (1)

Publication Number Publication Date
DK119985B true DK119985B (da) 1971-03-22

Family

ID=19754767

Family Applications (1)

Application Number Title Priority Date Filing Date
DK283364AA DK119985B (da) 1963-06-10 1964-06-06 Fremgangsmåde til fremstilling af halvlederelementer, såsom transistører og dioder.

Country Status (11)

Country Link
US (1) US3386857A (da)
AT (1) AT251649B (da)
BE (1) BE649079A (da)
CH (1) CH434215A (da)
DE (1) DE1290925B (da)
DK (1) DK119985B (da)
ES (1) ES300735A1 (da)
FR (1) FR1403164A (da)
GB (1) GB1069525A (da)
NL (1) NL293863A (da)
SE (1) SE219233C1 (da)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552675A (en) * 1959-04-08 1996-09-03 Lemelson; Jerome H. High temperature reaction apparatus
US3926715A (en) * 1968-08-14 1975-12-16 Siemens Ag Method of epitactic precipitation of inorganic material
JPS5635024B2 (da) * 1973-12-14 1981-08-14
US4004954A (en) * 1976-02-25 1977-01-25 Rca Corporation Method of selective growth of microcrystalline silicon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL236697A (da) * 1958-05-16
BE621451A (da) * 1961-08-16
NL286507A (da) * 1961-12-11

Also Published As

Publication number Publication date
US3386857A (en) 1968-06-04
NL293863A (da) 1965-04-12
FR1403164A (fr) 1965-06-18
ES300735A1 (es) 1964-12-01
SE219233C1 (da) 1968-02-27
GB1069525A (en) 1967-05-17
CH434215A (de) 1967-04-30
BE649079A (da) 1964-12-10
DE1290925B (de) 1969-03-20
AT251649B (de) 1967-01-10

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