DK0645613T3 - Process for manufacturing thin-layer absolute pressure sensors - Google Patents

Process for manufacturing thin-layer absolute pressure sensors

Info

Publication number
DK0645613T3
DK0645613T3 DK93810589T DK93810589T DK0645613T3 DK 0645613 T3 DK0645613 T3 DK 0645613T3 DK 93810589 T DK93810589 T DK 93810589T DK 93810589 T DK93810589 T DK 93810589T DK 0645613 T3 DK0645613 T3 DK 0645613T3
Authority
DK
Denmark
Prior art keywords
pressure sensors
absolute pressure
manufacturing thin
layer absolute
layer
Prior art date
Application number
DK93810589T
Other languages
Danish (da)
Inventor
Frank Dr Hegner
Masoud Dr Ing Habibi
Ernst Prof Dr-Ing Habil Lueder
Traugott Dr Kallfass
Georg Dr Schneider
Original Assignee
Endress Hauser Gmbh Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Endress Hauser Gmbh Co filed Critical Endress Hauser Gmbh Co
Application granted granted Critical
Publication of DK0645613T3 publication Critical patent/DK0645613T3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
DK93810589T 1993-08-20 1993-08-20 Process for manufacturing thin-layer absolute pressure sensors DK0645613T3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19930810589 EP0645613B1 (en) 1993-08-20 1993-08-20 Method of manufacturing thin-film absolute-pressure sensors

Publications (1)

Publication Number Publication Date
DK0645613T3 true DK0645613T3 (en) 1999-01-11

Family

ID=8215017

Family Applications (1)

Application Number Title Priority Date Filing Date
DK93810589T DK0645613T3 (en) 1993-08-20 1993-08-20 Process for manufacturing thin-layer absolute pressure sensors

Country Status (5)

Country Link
EP (1) EP0645613B1 (en)
JP (1) JP2642599B2 (en)
CA (1) CA2130505C (en)
DE (1) DE59308318D1 (en)
DK (1) DK0645613T3 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2762389B1 (en) 1997-04-17 1999-05-21 Commissariat Energie Atomique FLEXIBLE MEMBRANE MICROSYSTEM FOR PRESSURE SENSOR AND METHOD FOR PRODUCING THE SAME
DE10144847A1 (en) * 2001-09-12 2003-03-27 Infineon Technologies Ag Production of a membrane on a semiconductor substrate comprises forming trenches in the substrate, applying a dielectric material, isotropically etching the substrate, and applying a further dielectric material
US7353719B2 (en) 2002-03-28 2008-04-08 Seiko Epson Corporation Pressure sensor and method for fabricating the same
KR100798601B1 (en) * 2002-03-29 2008-01-28 산요덴키가부시키가이샤 Pressure sensor and method for fabricating the same
WO2003083426A1 (en) * 2002-03-29 2003-10-09 Sanyo Electric Co., Ltd. Pressure sensor
CN1330952C (en) * 2003-11-14 2007-08-08 中国科学院电子学研究所 Polymerized material baroceptor chip
JP4534622B2 (en) * 2004-06-23 2010-09-01 ソニー株式会社 Functional element and manufacturing method thereof, fluid discharge head, and printing apparatus
KR100608927B1 (en) * 2005-05-26 2006-08-08 한국과학기술원 Electrode layer for capacitor, method of manufacturing the electrode layer, unit sensor using the electrode layer and tactile sensor using the unit sensor
WO2009130628A1 (en) * 2008-04-23 2009-10-29 Nxp B.V. Capacitive pressure sensor
CN116608988B (en) * 2023-06-02 2024-02-27 兰州空间技术物理研究所 Multi-pressure-sensitive film absolute MEMS capacitance film vacuum gauge

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3108300C2 (en) * 1980-03-06 1986-05-28 Robert Bosch Gmbh, 7000 Stuttgart Pressure cell and process for its manufacture
JPH0750789B2 (en) * 1986-07-18 1995-05-31 日産自動車株式会社 Method for manufacturing semiconductor pressure converter
US5189916A (en) * 1990-08-24 1993-03-02 Ngk Spark Plug Co., Ltd. Pressure sensor
JPH05126661A (en) * 1991-11-08 1993-05-21 Toyota Central Res & Dev Lab Inc Semiconductor pressure sensor

Also Published As

Publication number Publication date
JP2642599B2 (en) 1997-08-20
EP0645613A1 (en) 1995-03-29
CA2130505C (en) 1999-11-30
JPH0783776A (en) 1995-03-31
CA2130505A1 (en) 1995-02-21
EP0645613B1 (en) 1998-03-25
DE59308318D1 (en) 1998-04-30

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