DEP0034432DA - Circuit arrangement for regulating the current in the case of rapidly changing voltages - Google Patents

Description

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s & Halnfce Λ.ΰν Abt, i '& A / Fg, Muenehen; ■' - .; ■. ·. ' / entablaturig ■ '. .Inventor; ■ - \. P / of .Dr .Waiter Schottin *; ■. ". ■■ M ue η ΰ ho, η ϊ. '" ■■: _>. · '■ ■ ..?, *> Pr, ing "Friedrich .Vf unfortunately." Dienerstr. 15 /".'■■ ' Costs tr & oot. ·:' WA / Fg Ku ^ nchen. '

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J3ehaltungsaxiDrdnimg for the regulation 'of the "· Strome5; box Schnell,"' 'dlihS'

In. Signal- and Spreclastroriilcraigen., Also, in Stromvcrsorgungs-. ·. ■ ■ krbißen, · treteii'dureh Stoüramgeii lileixjGj '' fast tension saendür-imgen a-Lif in the f oriu of WecUselstroeinsn / Or ¹ · Wöchsülstromuenerlagerten Gle Stgorun | :: cn in the Vc-rbraiiehcrkreis oäor Schiipöon; on the electrical installation door ii

StroiTi8.bhaengige 'Vidorstamme knownyr kind ( ^e.g.,; äuüi'fvvici.c-rstciinde}. Voraeegen.-. Awar the influence' variaolor Lei _r : -tuTigen '-VZoit ^ sK find a -us susehalt on, by clicking on. einregeln a constant SpeisostroiiL they ^ siiid jodoch before alle'i their Waorjie- tra ^ ;; Gheit weighed not .in the lågt; ₃ 'the influence faster Spa'ftnvonr.sscli.v.'ankuiig-civ to u ^ soitigcn / Man.kanil ' nxax these two' Bodingtuigen in simple white.tuid.rait a single container-. 'Nittei er . ciiiün'.weitgehend inertia working resistance einschaltetj the "characteristic curve ¹ in a wide range ^of;.. '..?. unabhaengigon current gewaohrleistGt as a counter standskoerpgr v ^r er' dor voltage undfet nan v'orEugsweise ßporrschichtSulleri udor HaIbloit'er 'widerstaonab, sb, WaLfranspitzenj which ait üornianium, are in .Boruehruiig and' a corresponding characteristic aufwel8Gi; i, ^-,: in figure 1 is OINC g lcJns Stroia-i ^ ianranngsktinnlinie shown. ¥ It is essential for i | iy _? that lim den ArbaitstainktEhuriza. '■;.' ■ (.starlr auszo'genoa Kajivenstueel ·; :)., which by the differential- "'■■ · ■' qtiotienten dU / clJ. ^ e.geüana Scheinvxidorstand i'xior lcloine _? Spct.tttBungsschvrankungen is large ie £ strou remains at .diesen; Spannuas3SC} iW'rnkun £ 3n virtually 'constant -'Er' · ^holds: SIEA au ° ■:; iler Zurvenl.inie iJie Stroiaaiinderurigen.. pin! .cjlso v / iVsontllbh: ... klüinerv than with V ^ rViTunciuiig, an iron hydrogen resistance ^ ';"]' ■. at Vi eich em at small margins of expansion. Strüixtenderi-üagea, in -der? Οκ a hysteresis loop irastrmde kauu ^ n _{; i} the 2ua; ' .Comparison in -? I £ ur 1 is indicated by dashed lines, at the ^ other ■ side stay; jedesh'fle ^ resistance ^ egwiiucber 'Glolchstroa - U / J; \ kli ^ which, for example, ^{gets caught up in:} i! n reference to the Si'icifiüstrom. ^lst,: ': ■■■ &£'':<' ^i: 'λ'■:%; ^;'V;''/'

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borrowed number of disturbing waves of a certain kind; prc cnr is to be understood , but that when there are simultaneously impurities with a potential and negative charge, the difference between the positive and negative impurity density (multiplied by the respective charge number of the impurity ions) is important, which is decisive for the charge density "Sine effective positive otörstellendichte 10 / cnr could therefore ZLB" also by hervor- "are called" that in those parts Cleans 10 - * positive charge carriers and 9 · Iu negative Ladungsträger'vorhanden sin.d _e

Depending on the required working voltage, this low-defect layer should be selected to be more or less wide! z, 3 _e would be low in space charge with a working voltage of 50 V and a thickness. Schi ch ^ -von XO ₁ , 'cm the additional field strength can reach the order of magnitude 5GgLCF -' ^ _# Iu V / cm, while the rest field strength may be above ICK V / cm. According to the invention, however, provision is made to continue to allow the layer with a low space charge, which is defined in this way in terms of its thickness, to adjoin areas with the highest possible space charge, possibly also metals, since otherwise unnecessarily high series resistances occur, which limit the current energy of the arrangement and would prevent the required initial steep rise in the current-voltage curve (Figure 1). of which the impurity adjacent to the tip has a high content of positive excess electrons emitting impurities, while all further single crystals adjoining this contact have negative impurities which have emitted defect electrons. Here the condition that the zero zone is very thin is realized by the discontinuous juxtaposition of areas with stronger positive and stronger negative impurity density, while for the decrease in impurity density required according to the present invention towards the interior of the crystallites only more or less accidental causes are present, so that at higher voltages the saturation character ■ of these arrangements is still unsatisfactory and "appeared unsuitable for a technical application"

An advantageous application of the invention "results in stand for feed bridges in Eern ^ computer systems"

Feed bridges in telephone systems should first fulfill the condition that the supply current constant a as possible, the length of the connection line, for "B _e, has independent value to the subscriber line. In the case of voter systems, there is also the requirement that the surge receiving relay located in the feeder bridge has the lowest possible inductance, taking into account the pulses emitted by the part number dial, so that the impulses. pulsverzferrung remains small and is of 'the length of the subscriber line independent, Auf.-4e3 - other-side should · - d ^ r * impedance of the feeding bridge for-speech currents;.? because ^one of attenuation and interference resulting from the Feed battery come,% <kder caused by equalizing currents - in the earth over the capacity of the subscriber cable. be high, so that the Baeiniluseuhg the Scx'ecb.stüomkkreis <lurch die-St or flow

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loosely working resistor, the characteristic curve of which is largely a voltage independent of the voltage "b _{B" placed} in the supply bridge * ■ -

! By switching on hydrogen water stations in the. As already mentioned, the supply circuit can meet these conditions are not met, - because, due to the thermal inertia, these? / resistances are also small, but rapidly changing; η Voltages, even changes in current · occur which are disturbing noticeable in the speaking circles »

Figure 2 shows a known circuit for a Fernspz · _"e echanlage at -welcher dio feeding bridge consisting of the two windings of the Stromstossempfnngsrelais A in the first group selector I GW is arranged. The battery B feeds the relay A via the two windings, the two speech arms of the preselector VW and the speech wires of the subscriber line running in a Zabel K, the subscriber parts Tn. The relay A has; low inductivity and high pathability; The latter is achieved, for example, by a low contact spring load. The impedance ',. (dU) opposite Sfctiratrsfomen ^ or «?» ♦ *> «■

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According to the invention, the resistance. can 'be' -Apply‖ in other circuits V · wo'es apkomnrfc out trägheitslbs to ■, rules''% 1μ weilreres -Example was, wia.in Big,' ^-3. S ^ indicated the Einöchaltung -'- of a ßß $ © hani resistor in the circuit peeped by an -indulEtor. called Der, Resistance-S- dieöt - here for ^, eE ^^ r ^ UBg-des-'Itöiu ^ -örsfromg at Kur?. conclusions in the Art.

The resistors according to the invention can also be used to advantage for regulating the feed current (heating current) of VacLL pipes use instead of the previously used 5.cb.en E-i ^ enaAsseirstaffücnd Ud ± ± dbäd

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Claims (1)

.Patent on sayings " Ii attitude arrangement for regulating the strobe in the case of rapidly changing voltages (alternating currents or alternating currents ** ® »® superimposed green currents) _? gekGnnzeiehnet characterized äass _f in the circuit to be controlled, a weitgetie ^ id inertia. working resistor is switched on ₈ whose characteristic curve guarantees a current independent of the voltage within wide limits « 2 _e circuit arrangement according to claim 1 _f , characterized in that as a resistance working without inertia in the circuit to be regulated, a barrier layer or a semiconductor resistor with the corresponding characteristic is switched on 3 * circuit arrangement according to claim. , 2 ₉ characterized in that a semiconductor resistor in the form of tungsten tips on germanium is switched on in the circuit to be controlled, ■, ■ .. ^ Ih.Schaltunganordnung according to claim 1 and 2 used * semiconductor arrangement ₉ characterized ^ that the semiconductor arrangement as an effective resistance element contains a ^ thin space charge zone (of the order of a few ΙΟ "- 'up to Low voltage of about 1/2 to 1 V has developed so that rest field strengths of the order of magnitude ICr V / cm and more occur * while an additional voltage voltage is distributed over a significantly greater layer thickness (order of magnitude up to 10 "" - ^ cm) _e so that the external operating field strength remains below the rest field strength or at least does not exceed it significantly. 5 «Semiconductor arrangements according to claim 4 _P, characterized by the incorporation of large effective interference point densities (size order over 10? Cm) in the immediate area. Environment dei "thin null zone ₉ during or adjacent to the semiconductor Nullzöne in another about 10 to 10 ■ * cm thick layer only low effective Störstellen- · densities (magnitude ICR" / onr) * | _B arrangement according to claim 5 _f , characterized in that the thicker notch-poor body was not again adjoined by a body rich in imperfections or _a highly conductive body, 7 * _f arrangement according to claim 5 characterized in that _t the requested low effective impurity concentration by superimposing greater psotiver and negative impurity concentrations is produced, whose charges SiOH almost cancel * 8 * Arrangement according to one of claims 4 to 7® characterized in that the null zore is marked by an at the ' Urenae semiconductors / metal forming edge layer (physical barrier layer) is formed «' 9. An arrangement nachreinem of claims 4 to 7 ₉ marked in by "* lines, AEE & k, the zero zone on both sides of semiconductors" limited _s ISTJ wherein ala cause "of the SiOH aiisblläenäsn RuhepctentisvTiifferenz either ¹ 'of the tiberschuss- BAW _e failures * - Ieiv.p-ivi ---. T? - '. Ir \ 7?; - r- d.pr homogeneous contiguous part © ein.y £ -._- λ -.-: ■■:: .-. Rcu. Harclsxt; i.-i-! 3 Vicfcacam, .be k?> Nn ^ or the ^^ V ₁ * · *, Where as tessar te ^^ Äi »bUüe« Ä «i ttatblei« «« PtokiöM ^ Qto ki _iimi or * Def ektleituDgsch ^ iakter ssweies »to each other d ^ Hlblfc ^ "Circuit arrangement for regulating the current through resistors ■ according to claims 1 - 9 characterized by its use in signal," and grain Estrom ~ circles Fernsprechanlageng as participants feed bridges "lGduktorstroinkreisen Impiilsfcreisen _t ^ .for Hei ieraej"?. circles of vacuum tubes u <, dgle ^h 11 «Schaltur.grsanordnung -according to claim 10 _? cte & uxch gekennzeich-iet _t that the inertia working. Resistors "ic" series with the feed bridge relays of the feed circuit of a call station are connected; are "," ■ ".