DE9417364U1 - Solid state switch - Google Patents

Solid state switch

Info

Publication number
DE9417364U1
DE9417364U1 DE9417364U DE9417364U DE9417364U1 DE 9417364 U1 DE9417364 U1 DE 9417364U1 DE 9417364 U DE9417364 U DE 9417364U DE 9417364 U DE9417364 U DE 9417364U DE 9417364 U1 DE9417364 U1 DE 9417364U1
Authority
DE
Germany
Prior art keywords
solid state
state switch
switch
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE9417364U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE9417364U priority Critical patent/DE9417364U1/en
Publication of DE9417364U1 publication Critical patent/DE9417364U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608Silicon carbide
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
DE9417364U 1994-10-28 1994-10-28 Solid state switch Expired - Lifetime DE9417364U1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE9417364U DE9417364U1 (en) 1994-10-28 1994-10-28 Solid state switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE9417364U DE9417364U1 (en) 1994-10-28 1994-10-28 Solid state switch

Publications (1)

Publication Number Publication Date
DE9417364U1 true DE9417364U1 (en) 1995-01-05

Family

ID=6915454

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9417364U Expired - Lifetime DE9417364U1 (en) 1994-10-28 1994-10-28 Solid state switch

Country Status (1)

Country Link
DE (1) DE9417364U1 (en)

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