DE930537C - Photo layer for Vidikon - Google Patents

Photo layer for Vidikon

Info

Publication number
DE930537C
DE930537C DEG9360A DEG0009360A DE930537C DE 930537 C DE930537 C DE 930537C DE G9360 A DEG9360 A DE G9360A DE G0009360 A DEG0009360 A DE G0009360A DE 930537 C DE930537 C DE 930537C
Authority
DE
Germany
Prior art keywords
vidikon
photo layer
layers
photo
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEG9360A
Other languages
German (de)
Inventor
Walter Dr-Ing Heimann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PAUL GOERCKE DIPL ING
Original Assignee
PAUL GOERCKE DIPL ING
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PAUL GOERCKE DIPL ING filed Critical PAUL GOERCKE DIPL ING
Priority to DEG9360A priority Critical patent/DE930537C/en
Priority to FR1080968D priority patent/FR1080968A/en
Application granted granted Critical
Publication of DE930537C publication Critical patent/DE930537C/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Description

Als Photoscbicfaten für Vidikons wurde bisher vornehmlich Selen in roter amorpher Modifikation benutzt. Der Nachteil dieser .Schichten liegt in der außerordentlich starken Temperaturabhängigkeit. Über so0 C werden diesel Schichten bereits, instabil und lassen sich praktisch nur bei Temperaturen zwischen io und 300 C verwenden.Selenium in red amorphous modification has so far primarily been used as photoscbicfate for vidikons. The disadvantage of these .Schichten is the extremely strong temperature dependence. Above this 0 C, these layers already become unstable and can practically only be used at temperatures between 10 and 30 ° C.

Sehr ähnlich verhalten sich Schichten aus Antimon-Trisulfid, wenn die Werte hier auch schon um Weniges besser liegen.Layers made of antimony trisulfide behave in a very similar manner, even if the values are a little better here.

Nach der vorliegenden Erfindung werden nun statt dieser bekannten Schichten solche nach der im Hauptpatent geschützten Art verwendet, die aus Cadmium-Sulfid . bestehen. Bei der Herstellung einer solchen Schicht wird der zu behandelnde Halbleiter in ein Pulver eingebettet, das aus dem gleichen oder einem verwandten Grundmaterial besteht wie der zu behandelnde Halbleiter und dessen Zusammensetzung der für dien zu behandelnden Halbleiter gewünschten entspricht. Das Pulver mit den eingebetteten Halbleitern wird erhitzt, und die für eine Thermodiffusion ausreichende Temperatur wird so lange aufrechterhalten, bis sich die verschiedenen Störstellenkonzentrationen oder Abweichungen vom stöchiometrischen Verhältnis der Grund-Substanzen zwischen Einbettpulver und zu behan-According to the present invention, instead of these known layers, those according to the im Main patent protected kind used made from cadmium sulfide. exist. In the preparation of Such a layer, the semiconductor to be treated is embedded in a powder that consists of the the same or a related basic material as the semiconductor to be treated and its Composition of the desired for the semiconductor to be treated corresponds. The powder with the embedded semiconductors is heated, and the temperature sufficient for thermal diffusion is maintained until the different Impurity concentrations or deviations from the stoichiometric ratio of the basic substances between embedding powder and to be treated

delnden Halbleiter ausgeglichen haben. Das Verfahren und seine Vorteile sind im Einzelnen im Hauptpatent eingehend dargelegt.have compensated for the delnding semiconductor. The procedure and its advantages are detailed in Main patent set out in detail.

Verwendet man nun derartige Schichten als Photoschichten für Vidikons, so treten auf diesem Gebiet ganz besondere Vorteile gegenüber den bisher verwendeten Photoschichten ein.If you now use such layers as photo layers for vidikons, you step on this Area has very special advantages over the previously used photo layers.

Die Cadmium-Sulndschdcht ist praktisch völlig temperaturunabhängig: Bei nicht allzulanger Belastung treten Veränderungen kaum unter 31600 C ein und außerdem liegt, was für die Funktion des Vidikon von ausschlaggebender Bedeutung ist, die Empfindlichkeit dieser neuen Schichten etwa um den Faktor io3 höher als bei den bisher üblichen Photoschichten. Ein weiterer Vorteil liegt in der spektralen' Verteilung. Durch besondere Aktivatoren, z. B. Kupfer, Selen, Nickel und anderes mehr, kann das Maximum der Empfindlichkeit in jeden gewünschten IS'pektraJbereieh gelegt werden.The cadmium Sulndschdcht is almost completely independent of temperature: In not too long load changes occur hardly 3160 0 C and also is what is the function of the vidicon crucial, the sensitivity of these new layers higher by about a factor io 3 than in the previously usual photo layers. Another advantage is the spectral distribution. Through special activators, e.g. B. copper, selenium, nickel and others, the maximum sensitivity can be placed in any desired range.

Claims (2)

PATENTANSPRÜCHE:PATENT CLAIMS: 1. Halbleiterschicht aus Cadmium-Sulnd, die - nach dem dm Patent 919 71217 dargelegten Verfahren hergestellt ist, gekennzeichnet durch die Verwendung als Phötoschicht für Vidikons..1. Semiconductor layer made of cadmium sulnd, the - Is produced according to the method set out in patent 919 71217, characterized by the Use as a photo layer for Vidikons. 2. Photoschicht nach Anspruch 1, dadurch gekennzeichnet, daß dais Maximum dar Empfindlichkeit durch Verwendung besonderier Aktivatoren in den jeweils gewünschten Spektralbereich gelegt ist.2. Photo layer according to claim 1, characterized characterized that the maximum sensitivity through the use of special activators is placed in the respectively desired spectral range.
DEG9360A 1952-07-15 1952-07-15 Photo layer for Vidikon Expired DE930537C (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DEG9360A DE930537C (en) 1952-07-15 1952-07-15 Photo layer for Vidikon
FR1080968D FR1080968A (en) 1952-07-15 1953-06-25 Improvements to photosensitive semiconductor layers and vacuum tubes incorporating such a layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEG9360A DE930537C (en) 1952-07-15 1952-07-15 Photo layer for Vidikon

Publications (1)

Publication Number Publication Date
DE930537C true DE930537C (en) 1955-07-18

Family

ID=7119069

Family Applications (1)

Application Number Title Priority Date Filing Date
DEG9360A Expired DE930537C (en) 1952-07-15 1952-07-15 Photo layer for Vidikon

Country Status (2)

Country Link
DE (1) DE930537C (en)
FR (1) FR1080968A (en)

Also Published As

Publication number Publication date
FR1080968A (en) 1954-12-15

Similar Documents

Publication Publication Date Title
DE2429507A1 (en) N-CONDUCTIVE AMORPHIC SEMICONDUCTOR MATERIALS, METHODS OF MANUFACTURING THEREOF, AND DEVICES CONTAINING SUCH
CH367864A (en) Thermopile, in particular electrothermal cooling element and process for their production
DE2353376A1 (en) SEMI-CONDUCTIVE GLAZE SUBSTANCE
DE727015C (en) Junction rectifier
DE930537C (en) Photo layer for Vidikon
DE1564356C2 (en) Method of making a photocell
DE2251938A1 (en) ALLOY FOR THERMOELECTRIC ENERGY CONVERSION, PROCESS FOR THEIR PRODUCTION AND THERMOELECTRIC ENERGY CONVERTERs formed therefrom
DE960373C (en) Semiconducting material
DE2846577C2 (en) Process for the production of resistor material and resistor bodies produced by this process
DE1644045A1 (en) Electroluminescent components and processes for their manufacture
DE1097038B (en) Diffusion process for the generation of transitions on semiconductor bodies of a certain conductivity type intended for semiconductor arrangements
DE2537327A1 (en) SEMICONDUCTOR DEVICE WITH A PN JUNCTION OF UNIFORM CURRENT DENSITY DISTRIBUTION AND METHOD FOR MANUFACTURING SUCH A SEMICONDUCTOR DEVICE
DE2937173C2 (en)
DE1060053B (en) Process for the production of selenium rectifiers with a multilayer semiconductor with different halogen contents and electropositive additives in the individual layers
AT219097B (en) Tunnel diode and process for its manufacture
DE974580C (en) Method of manufacturing selenium rectifier plates
DE1540420C3 (en) Process for the production of electrical thin film resistors
AT235982B (en) Method for covering a filament for an indirectly heated cathode with a dark-colored insulating layer
DE1041987B (en) Thermocouple, especially for thermoelectric cold generation
DE1914563B2 (en) METHOD OF MANUFACTURING AN ELECTROLUMINESCENT COMPONENT
DE1046193B (en) Process for the production of semiconducting, in particular photosensitive, devices by depositing lead sulfide
DE609155C (en) Luminous body for electrical heating
DE2358552A1 (en) METHOD OF MANUFACTURING A RESISTOR ELEMENT
AT219096B (en) Method for applying a doping layer in a body made of silicon
DE2330810A1 (en) TEMPERATURE SENSITIVE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING IT