DE928674C - Method for producing single crystals and their use - Google Patents

Method for producing single crystals and their use

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Publication number
DE928674C
DE928674C DEL12642A DEL0012642A DE928674C DE 928674 C DE928674 C DE 928674C DE L12642 A DEL12642 A DE L12642A DE L0012642 A DEL0012642 A DE L0012642A DE 928674 C DE928674 C DE 928674C
Authority
DE
Germany
Prior art keywords
single crystals
crystallization
rectifiers
divides
partition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEL12642A
Other languages
German (de)
Inventor
Werner Dr Phil Koch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to DEL12642A priority Critical patent/DE928674C/en
Application granted granted Critical
Publication of DE928674C publication Critical patent/DE928674C/en
Expired legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation

Description

Verfahren zum Herstellen von Einkristallen und deren Verwendung Es sind bereits Verfahren bekanntgeworden, um Einkristalle in waagerechten. Schiffchen herzustellen. Jedoch gelang es mit diesen Verfahren nicht, zwei durch eine Korngrenze geteilte Einlzristalle herzustellen, wie sie z. B. in. elektrisch unsymmetrisch leitenden. Systemen. Verwendung finden.Process for the production of single crystals and their use Es processes have already become known to produce single crystals in horizontal. Boat to manufacture. However, this method did not succeed in getting two through a grain boundary to produce divided single crystals, as they are, for. B. in. Electrically unbalanced senior. Systems. Find use.

Die Erfindung bezieht sich auf ein Verfahren zur Herstellung von Einkristallen, insbesondere von. Germanium-Einkristallen, die durch eine Korngrenze getrennt sind, in einem waagerechten Schiffchen, beispielsweise aus reinem Kohlenstoff, das seich von den bisher bekannten dadurch unterscheidet, daß dass Schiffchen an seinem einen Ende, an dem die Kristallisation beginnen soll, eine senkrechte Trennwand auf-,veist, die diesen Teil des Kohleschiffchens in der Längsrichtung in zwei Teile teilt, und die Kristallisation durch Abkühlung von dieser Seite her vollzogen wird.The invention relates to a method for producing single crystals, especially from. Germanium single crystals separated by a grain boundary, in a horizontal boat, for example made of pure carbon, the seich differs from the previously known in that the boat on his one At the end at which the crystallization is to begin, open a vertical partition, which divides this part of the coal boat lengthways into two parts, and the crystallization is carried out by cooling from this side.

Mit Vorteil läßt sich das Verfahren mit solchen Schiffchen durchführen., bei welchem die Trennwand herausnehmbar angeordnet ist.The method can advantageously be carried out with such boats., in which the partition is removably arranged.

Auf diese Art wird erreicht, da,ß die Kristallisation der Schmelze zunächst die Trennwand von beiden Seiten umfaßt, an, diesen Umfassungsarmen beginnt, derart, d-aß sich dort Einkris.tadle bilden, die durch die zunehmende Abkühlung längs der Trennwand Weiterwachsen: und von deren: Ende an, durch eine Korngrenze getrennt, gemeinsam Weiterwachsen,. Schneidet man, dann aus den so gewachsenen. Kristallen senkrecht zur Erstarrungsrichtung Scheiben aus, so erhält man: zwei Einkristalle, die durch eine Korngrenze getrennt sind. Einkristalle, die nach dem beschriebenen. Verfahren gezüchtet sind, eignen sich besonders, zur Verwendung in Gleichrichtern und elektrisch unsymmetrisch leitenden Systemen, wie z. B. Kris.tallverstärkern, steuerha_ren Gleichrichtern und Oberlächenbransistoiren.In this way it is achieved that the crystallization of the melt first embraces the partition on both sides, begins with these surrounding arms, in such a way that Einkris.tadle form there, caused by the increasing cooling Continue to grow along the dividing wall: and from the end of it, through a grain boundary separately, growing together. If you cut, then from those that have grown in this way. Crystals perpendicular to the direction of solidification from disks, one obtains: two single crystals, which are separated by a grain boundary. Single crystals that after the described. Procedures bred are particularly suitable for use in rectifiers and electrically asymmetrically conductive systems, such as B. Crystal amplifiers, controllable rectifiers and surface transistors.

Claims (3)

PATENTANSPRÜCHE: i. Verfahren. zum Herstellen von, EinkristaLen, insbesondere vom: Gemanium-Einkristallen, die durch eine Korngremze getrennt sind, in einem waagerechten Schi.ffchen., beispielsweise aus reinem Kohlenstoff, dadurch gekennzeichnet, daß das Schiffchen an. seinem ennen Ende, an dem die Kristallisation beginnen soll, eine senkrechte Trennwand aufweist, die diesen Teil des Kahleschiffchens in der Längsrichtung in zwei Teile teilt, und die Kristaslisation durch Abkühlung von dieser Seite vollzogen wird. PATENT CLAIMS: i. Procedure. for the production of, single crystals, in particular vom: Gemanium single crystals, which are separated by a grain boundary, in a horizontal one Schi.ffchen., For example made of pure carbon, characterized in that the shuttle on. its very end, at which the crystallization should begin, has a vertical partition that divides this part of the bald boat in the Divides lengthways into two parts, and the crystallization by cooling from this Page is carried out. 2. Verfahren nach Anspruch i, dadurch gekennzeichnet, da,B die Trennwand herausnehmbar angeoTdnet ist. 2. The method according to claim i, characterized in that, B the partition is removable. 3. Verwendung von nach dem Verfahren gemäß der Ansprüche i und 2 hergestellten Einkristallen in Gleichrichtern und elektrisch unsymmetrisch leitenden, Systemen, -wie Kris.tallverstärkern, steuerhairen Gleichrichtern und Ob:erfläzhent-rans.istoren. Angezogene Druckschriften: E. H. Hungermann, »Das Elektron«, Bd.5 (1951/1952), Heft 13/14 S. 431 u. 433; USA.-Pa,ten.tschrift Nr. 2 6o2 763.3. Use of after the procedure according to claims i and 2 produced single crystals in rectifiers and electrically asymmetrically conductive systems, such as crystal amplifiers, tax-haired rectifiers and whether: erfläzhent-rans.istoren. Printed publications: E. H. Hungermann, »Das Elektron ", Vol. 5 (1951/1952), Issue 13/14, pp. 431 and 433; USA.-Pa, ten.tschrift No. 2 6o2 763.
DEL12642A 1952-06-21 1952-06-21 Method for producing single crystals and their use Expired DE928674C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEL12642A DE928674C (en) 1952-06-21 1952-06-21 Method for producing single crystals and their use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL12642A DE928674C (en) 1952-06-21 1952-06-21 Method for producing single crystals and their use

Publications (1)

Publication Number Publication Date
DE928674C true DE928674C (en) 1955-06-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
DEL12642A Expired DE928674C (en) 1952-06-21 1952-06-21 Method for producing single crystals and their use

Country Status (1)

Country Link
DE (1) DE928674C (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2602763A (en) * 1948-12-29 1952-07-08 Bell Telephone Labor Inc Preparation of semiconductive materials for translating devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2602763A (en) * 1948-12-29 1952-07-08 Bell Telephone Labor Inc Preparation of semiconductive materials for translating devices

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