DE918098C - Reduction semiconductor with an artificial barrier layer - Google Patents
Reduction semiconductor with an artificial barrier layerInfo
- Publication number
- DE918098C DE918098C DES3953D DES0003953D DE918098C DE 918098 C DE918098 C DE 918098C DE S3953 D DES3953 D DE S3953D DE S0003953 D DES0003953 D DE S0003953D DE 918098 C DE918098 C DE 918098C
- Authority
- DE
- Germany
- Prior art keywords
- layer
- metal
- oxide layer
- oxygen
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 230000004888 barrier function Effects 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 9
- 239000002966 varnish Substances 0.000 claims description 7
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 229910007541 Zn O Inorganic materials 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 229920002678 cellulose Polymers 0.000 claims description 2
- 239000001913 cellulose Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 229930195733 hydrocarbon Natural products 0.000 claims description 2
- 150000002430 hydrocarbons Chemical class 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- -1 naphthalene Chemical class 0.000 claims description 2
- 239000012044 organic layer Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229920001800 Shellac Polymers 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000003973 paint Substances 0.000 claims 1
- 238000002203 pretreatment Methods 0.000 claims 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 claims 1
- 239000004208 shellac Substances 0.000 claims 1
- 229940113147 shellac Drugs 0.000 claims 1
- 235000013874 shellac Nutrition 0.000 claims 1
- 239000011701 zinc Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 235000021388 linseed oil Nutrition 0.000 description 1
- 239000000944 linseed oil Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Description
Reduktionshalbleiter mit künstlicher Sperrschicht Es ist bereits eine neue Art von Gleichrichtern und Fotozellen vorgeschlagen worden, bei der die unipolare Sperrwirkung an einer zwischen einem oxydischen Halbleiter und einem Metall erzeugten Sperrschicht ausgenutzt wird, wobei der oxydische Halbleiter derart beschaffen ist, daß er mit abnehmendem Sauerstoffgehalt besser leitend wird wie Zn 0, Cd 0, Pb O, Ti 02, Mo 03,W 03,U 03 und die festen Monoxyde der in mehr als zweifacher Wertigkeit auftretenden Metalle, wie V 0 oder Cr O oder Mn 0 oder Fe O oder Co O oder NiO oder Ga O oder Ge 0 oder Nb O oder Mo 0 oder In 0 oder Sn 0 oder Pb 0 oder Bi 0 oder aus einem stabilen Oxyd der in ihren höchsten Oxyden mit fünf- oder sechsfacher Wertigkeit auftretenden Metalle, wie Nb 02 oder Mo 02 oder Sb, 0, oder Ta OZ oder W 02 oder Th 02 oder U 02 oder Cd, 0 oder TI, 0. Diese als Reduktionshalbleiter bezeichneten Oxyde werden gemäß jenem Vorschlag derart behandelt, daß sie an der Seite, wo die gewünschte Sperrwirkung auftreten soll, in dünner Schicht mit Sauerstoff angereichert und dadurch sehr schlecht leitend werden, während der übrige Teil des Oxydes bis zur anderen Elektrode sauerstoffärmer und dadurch besser leitend gewählt wird. Dann tritt zwischen dem besser leitenden Teil des Oxydes und einer außen auf die sauerstoffhaltige Schicht aufgebrachten Metall- oder Aquadagelektrode eine unipolare Sperrwirkung auf, die bemerk enswerterweise den entgegengesetzten Richtungssinn hat wie an Sperrschichten von Oxydationshalbleitern; die Elektronen gehen leicht aus dem Reduktionshalbleiter durch die Sperrschicht in die angrenzende Metallelektrode, dagegen nur sehr schwer in umgekehrter Richtung, sie zeigen also eine Klasse mit einheitlichem., dem Cu, 0 entgegengesetzten Richtungssinn der Sperrwirkung.Reduction semiconductor with artificial barrier layer A new type of rectifier and photocell has already been proposed in which the unipolar barrier effect is used on a barrier layer created between an oxide semiconductor and a metal, the oxide semiconductor being such that it improves with decreasing oxygen content Conductive like Zn 0, Cd 0, Pb O, Ti 02, Mo 03, W 03, U 03 and the solid monoxides of metals that are more than double valued, such as V 0 or Cr O or Mn 0 or Fe O or Co O or NiO or Ga O or Ge 0 or Nb O or Mo 0 or In 0 or Sn 0 or Pb 0 or Bi 0 or from a stable oxide of the metals occurring in their highest oxides with five- or six-fold valency, such as Nb 02 or Mo 02 or Sb, 0, or Ta OZ or W 02 or Th 02 or U 02 or Cd, 0 or TI, 0. These oxides, known as reducing semiconductors, are treated according to that proposal in such a way that they are on the side where the desired The blocking effect is supposed to occur, enriched with oxygen in a thin layer and thereby become very poorly conductive, while the remaining part of the oxide up to the other electrode is chosen to be less oxygenated and therefore more conductive. Then a unipolar blocking effect occurs between the more conductive part of the oxide and a metal or aquadag electrode applied externally to the oxygen-containing layer, which remarkably has the opposite sense of direction as on blocking layers of oxidation semiconductors; The electrons go easily from the reduction semiconductor through the barrier layer into the adjacent metal electrode, but only with great difficulty in the opposite direction, so they show a class with a uniform direction of the barrier effect, opposite to that of Cu, 0.
In Weiterbildung jenes Vorschlages wird nun zur Erzeugung besonders hoher und konstanter unipolarer Sperrwirkungen an Reduktionshalbleitern das für Oxydationshalbleiter bekannte Verfahren angewandt, die benötigte Sperrschicht zwischen Halbleiter und Elektrode durch eine besondere hochisolierende Schicht aus einem fremden Stoff herzustellen anstatt durch bloße Sauerstoffänderung innerhalb der äußersten Oxydschicht. Als Material für derartige Schichten haben sich bei Oxydationshalbleitern bekanntlich sowohl hochisolierende anorganische Schichten aus Stoffen, wie Quarz, Alkalihalogeniden, Schwefel, Aluminiumoxyd, Zirkonoxyd, bewährt wie auch organische Schichten von kondensierbaren Kohlenwasserstoffen, wie Naphthalin, oder trocknende bzw. härtende organische Lacke, wie Leinöllack, Zelluloselack, Kunstharzlack usw. Die gleichen Stoffe werden erfindungsgemäß auch für Reduktionshalbleiter verwendet. Daneben kommen auch Fremdschichten in Frage, die in ihrer endgültigen, hochisolierenden Form erst auf dem Reduktionshalbleiter gebildet werden. Ist z. B., wie bei Zn 0, das Sulfid oder Selenid wesentlich schlechter leitend als Zn 0 selbst, so wird in Weiterbildung der Erfindung beispielsweise eine Zn S-Schicht auf der einen Seite des Zn 0-Körpers dadurch erzeugt, daß durch Reaktion mit Schwefel das Zn 0 in einer gewissen Schichtdicke in Zn S umgesetzt wird, oder es wird auf Zn0 Zink atomar aufgebracht und dieses dann in ganzer Schichtdicke in Zn S umgewandelt, oder endlich werden andere Metalle in atomarer Form aufgebracht, deren Verbindungen mit irgendwelchen elektronegativen Elementen besonders schlecht leiten, und es werden erst durch nachträgliche Reaktion mit den betreffenden Elementen diese Verbindungen hergestellt.In a further development of that proposal, generation now becomes special high and constant unipolar blocking effects on reduction semiconductors that for Oxidation semiconductors used known methods, the required barrier layer between Semiconductor and electrode through a special, highly insulating layer made of one to produce foreign matter instead of simply changing oxygen within the outermost oxide layer. Oxidation semiconductors have proven to be the material for such layers as is well known, both highly insulating inorganic layers made of materials such as quartz, Alkali halides, sulfur, aluminum oxide, zirconium oxide, proven as well as organic Layers of condensable hydrocarbons, such as naphthalene, or desiccant or hardening organic varnishes, such as linseed oil varnish, cellulose varnish, synthetic resin varnish, etc. According to the invention, the same substances are also used for reducing semiconductors. In addition, foreign layers come into question, those in their final, highly insulating Shape can only be formed on the reduction semiconductor. Is z. B., as with Zn 0, the sulfide or selenide conducts much less well than Zn 0 itself, so in Further development of the invention, for example, a Zn S layer on one side of the Zn 0 body produced in that the Zn 0 in a A certain layer thickness is converted into Zn S, or it is applied atomically to Zn0 zinc and this is then converted into Zn S in the entire layer thickness, or becomes finite other metals applied in atomic form, their compounds with any Electronegative elements conduct particularly poorly, and it is only through subsequent Reaction with the relevant elements produces these compounds.
Alle diese Fremdschichten werden vorzugsweise in Schichten von der Größenordnung i ... iop Dicke aufgebracht.All these foreign layers are preferably applied in layers of the order of magnitude i ... iop thickness.
Eine gewisse Unipolarität erhält man mit diesen künstlichen Sperrschichten bei jedem Leitfähigkeitszustand des reduktionshalbleitenden Oxydes. Gemäß dem weiteren Inhalt der Erfindung werden die reduktionshalbleitenden Oxyde jedoch vorzugsweise im sauerstoffarmen, gut leitenden Zustande verwendet. So hat sich z. B. herausgestellt, daß ein gesintertes Zn O-Plättchen, das durch Behandlung in Wasserstoff bei etwa 8oo° eine Kaltleitfähigkeit von etwa io-2 52-1 cm-' erhalten hatte, ein Güteverhältnis :250: i bei -#- i Volt aufweist, falls als Sperrschicht eine Kunstharzschicht von i p, Dicke verwendet wird. Benutzte man unter im übrigen gleichen Bedingungen ein Zn0-Ausgangsmaterial von 6.1:0-4 52-1 cm-1 spezifischer Leitfähigkeit, so war das betreffende Güteverhältnis nur 70: z, und die absoluten Stromstärken waren bedeutend geringer. Aus demselben Grunde erweisen sich auch diejenigen Reduktionshalbleiter, die überhaupt keine hohen Kaltleitwerte zu erhalten vermögen, wie A1203, Ta205, Zr02 usw., zur Herstellung von Anordnungen gemäß der Erfindung als weniger geeignet. Als Regel kann angegeben «erden, daß diejenigen reduktionshalbleitenden Oxyde besonders gut verwendbar sind, deren Leitfähigkeit bei Sauerstoffentzug mindestens auf die Größenordnung io-4 P-1 cm-' gebracht werden kann.A certain unipolarity is obtained with these artificial barrier layers for every conductivity state of the reduction-semiconductor oxide. According to the further content of the invention, however, the reduction-semiconducting oxides are preferably used in the low-oxygen, highly conductive state. So has z. It was found, for example, that a sintered Zn O platelet, which by treatment in hydrogen at about 800 ° had a cold conductivity of about 10 -2 52-1 cm- ', has a quality ratio: 250: i at - # - i volts if a synthetic resin layer of ip, thickness is used as the barrier layer. If a ZnO starting material with a specific conductivity of 6.1: 0-4 52-1 cm-1 was used under otherwise identical conditions, the quality ratio in question was only 70: z, and the absolute currents were significantly lower. For the same reason, those reduction semiconductors which are not able to obtain any high PTC values at all, such as A1203, Ta205, Zr02, etc., also prove to be less suitable for producing arrangements according to the invention. As a rule, it can be stated that those reduction-semiconducting oxides can be used particularly well, the conductivity of which can be brought to at least the order of magnitude of 10 -4 P-1 cm -1 when oxygen is removed.
Die Stromzuführung an der nichtsperrenden Seite des Oxydes erfolgt durch eine beispielsweise aufgedampfte Metallelektrode oder durch eine Aquadagelektrode, und zwar unter Bedingungen, die eine Sauerstoffanreicherung und damit die Ausbildung einer entgegenwirkenden Sperrschicht ausschließen.The power is supplied to the non-blocking side of the oxide by a vapor-deposited metal electrode or by an aquadag electrode, for example, namely under conditions that an oxygen enrichment and thus the training exclude an opposing barrier layer.
Die Erfindung betrifft oxydische Halbleiter, bei denen der Unterschied zwischen Oxydations- und Reduktionshalbleitern ohne weiteres klargestellt werden kann. Es sei jedoch darauf hingewiesen, daß als maßgebend für das Auftreten einer unipolaren Sperrwirkung mit Elektronenflußrichtung Halbleitersperrschichtmetall nicht eigentlich das Verhalten des Halbleiters gegen Sauerstoff angesehen werden muß, sondern die Eigenschaft der Elektronenüberschußleitung, im Gegensatz zur Elektronendefektleitung.The invention relates to oxide semiconductors in which the difference between oxidation and reduction semiconductors can be clarified without further ado can. It should be noted, however, that as decisive for the occurrence of a unipolar barrier effect with electron flow direction semiconductor barrier metal the behavior of the semiconductor towards oxygen cannot actually be viewed must, but the property of the electron excess conduction, in contrast to the electron defect conduction.
Eine Ausführungsform der Erfindung ist in der Zeichnung in vergrößertem Maßstab schematisch dargestellt. 2 ist ein gut leitendes Zinkoxydplättchen von etwa i mm Dicke, 3 ist die Isolierschicht, beispielsweise aus Kunstharz, von etwa i ... ,u Dicke, die durch Auftragen und Trocknen von Kunstharzlack hergestellt wird. i und q. sind aufgedampfte Silberelektroden, 5, 5 sind die Stromzuführungen. Der Stromübergang zwischen z und 2 findet ohne jede Sperrwirkung statt, zwischen 2 und q. ist jedoch durch Zwischenschaltung der dünnen Kunstharzschicht 3 eine starke unipolare Sperrwirkung entstanden.An embodiment of the invention is shown schematically in the drawing on an enlarged scale. 2 is a zinc oxide plate with good conductivity, about 1 mm thick, 3 is the insulating layer, for example made of synthetic resin, about 1 ... , u thick, which is produced by applying and drying synthetic resin varnish. i and q. are vapor-deposited silver electrodes, 5, 5 are the power supply lines. The current transfer between z and 2 takes place without any blocking effect, between 2 and q. However, the interposition of the thin synthetic resin layer 3 has produced a strong unipolar blocking effect.
Soll die Anordnung als Sperrschichtfotozelle Verwendung finden, so wird vorzugsweise die Elektrode q. lichtdurchlässig gemacht.If the arrangement is to be used as a barrier layer photocell, see above is preferably the electrode q. made translucent.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES3953D DE918098C (en) | 1936-08-21 | 1936-08-22 | Reduction semiconductor with an artificial barrier layer |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0003953 | 1936-08-21 | ||
| DES3953D DE918098C (en) | 1936-08-21 | 1936-08-22 | Reduction semiconductor with an artificial barrier layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE918098C true DE918098C (en) | 1954-10-25 |
Family
ID=25994719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES3953D Expired DE918098C (en) | 1936-08-21 | 1936-08-22 | Reduction semiconductor with an artificial barrier layer |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE918098C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1032669B (en) * | 1953-03-17 | 1958-06-19 | Haloid Co | Photosensitive material for generating a latent charge image |
| DE1161363B (en) * | 1959-07-20 | 1964-01-16 | Jenoptik Jena Gmbh | Photo element |
| DE1177253B (en) * | 1958-12-23 | 1964-09-03 | Egyesuelt Izzolampa | Asymmetrically conductive semiconductor arrangement consisting of an aluminum oxide layer and two semiconductor layers |
| DE1246136B (en) * | 1956-03-22 | 1967-08-03 | Philips Nv | Method for producing a radiation-sensitive body |
| US3391309A (en) * | 1963-07-15 | 1968-07-02 | Melpar Inc | Solid state cathode |
| DE1279236B (en) * | 1957-11-21 | 1968-10-03 | Gen Electric | Process for the production of an electron tube which can be used as an X-ray tube |
| DE2444160A1 (en) * | 1973-12-28 | 1975-07-10 | Ibm | RECTIFIER DIODE |
-
1936
- 1936-08-22 DE DES3953D patent/DE918098C/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1032669B (en) * | 1953-03-17 | 1958-06-19 | Haloid Co | Photosensitive material for generating a latent charge image |
| DE1246136B (en) * | 1956-03-22 | 1967-08-03 | Philips Nv | Method for producing a radiation-sensitive body |
| DE1279236B (en) * | 1957-11-21 | 1968-10-03 | Gen Electric | Process for the production of an electron tube which can be used as an X-ray tube |
| DE1177253B (en) * | 1958-12-23 | 1964-09-03 | Egyesuelt Izzolampa | Asymmetrically conductive semiconductor arrangement consisting of an aluminum oxide layer and two semiconductor layers |
| DE1161363B (en) * | 1959-07-20 | 1964-01-16 | Jenoptik Jena Gmbh | Photo element |
| US3391309A (en) * | 1963-07-15 | 1968-07-02 | Melpar Inc | Solid state cathode |
| DE2444160A1 (en) * | 1973-12-28 | 1975-07-10 | Ibm | RECTIFIER DIODE |
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