DE912457C - Method for eliminating flutter phenomena in piezoelectric crystals - Google Patents
Method for eliminating flutter phenomena in piezoelectric crystalsInfo
- Publication number
- DE912457C DE912457C DEZ993D DEZ0000993D DE912457C DE 912457 C DE912457 C DE 912457C DE Z993 D DEZ993 D DE Z993D DE Z0000993 D DEZ0000993 D DE Z0000993D DE 912457 C DE912457 C DE 912457C
- Authority
- DE
- Germany
- Prior art keywords
- piezoelectric crystals
- flutter phenomena
- crystals
- crystal
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 230000009191 jumping Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
Bei der Herstellung von piezoelektrischen Kristallen ergeben sich Schwierigkeiten insofern, als sich Flattererscheinungen bemerkbar machen; die darin bestehen, daß an manchen Stellen des Temperaturintervalls, in dem die Kristalle ihre Frequenz nicht ändern sollen, ein ständiges Hinundherspringen der Frequenz des Kristalls zwischen zwei Werten stattfindet, wobei die Häufigkeit des Umspringens verhältnismäßig niedrig liegt, etwa in der Größenordnung von einem Wechsel pro Sekunde. Bei den sogenannten Facettenkristallen hat man gewisse Erfolge in der Beseitigung der Flattererscheinungen in dem Anschleifen von Facetten verschiedener Form, insbesondere durch individuelles Anschleifen von Facetten mit verschiedenem Radius erzielt, ohne daß für dieses Vorgehen in jedem Einzelfall eine Vorschrift angegeben werden konnte.In the manufacture of piezoelectric crystals arise Difficulties insofar as flutter phenomena become noticeable; those in it exist that in some places of the temperature range in which the crystals shouldn't change their frequency, a constant jumping back and forth in frequency of the crystal takes place between two values, whereby the frequency of jumping over is relatively low, roughly on the order of one change per second. With the so-called facet crystals one has certain successes in the elimination the flutter phenomena in the grinding of facets of various shapes, in particular achieved by individually grinding facets with different radius, without that a rule could be specified for this procedure in each individual case.
Gegenstand der vorliegenden Erfindung ist ein Verfahren zur Beseitigung von Flattererscheinungen bei piezoelektrischen Kristallen, gemäß dem die den Elektroden zugewandten Flächen des Kristalls mit einer dünnen, leitenden Schicht eines Metalls versehen werden. Auf diese Weise läßt sich ein einwandfreies Schwingen der Kristalle auf der vorgeschriebenen Sollfrequenz erreichen, ohne daß Flattererscheinungen auftreten. Mit Rücksicht auf möglichst geringe Beeinflussung der Schwingungseigenschaften der Kristalle, insbesondere hinsichtlich der Kapazität und Selbstinduktion sowie hinsichtlich der Dämpfung, erweist es sich als zweckmäßig, die Schicht so dünn zu wählen, wie es mit Rücksicht auf den notwendigen Zusammenhang innerhalb der Schicht möglich ist Zweckmäßig werden also die durch Aufdampfen. Aufspritzen od. dgl. aufgebrachten Schichten nur eine .solche Stärke aufweisen, daß sie wenigstens Halbleiterschichten darstellen. Zweckmäßig ist es auch: als Metall für die Schichten Chrom wegen seiner guten Haftfähigkeit zu wählen.The present invention relates to a method of disposal of flutter phenomena in piezoelectric crystals, according to which the electrodes facing surfaces of the crystal with a thin, conductive layer of a metal be provided. In this way the crystals can vibrate properly at the prescribed target frequency without fluttering. With regard to the least possible influence on the vibration properties of the Crystals, especially with regard to capacity and self-induction as well as with regard to the attenuation, it proves useful to choose the layer as thin as it is possible with regard to the necessary context within the layer it is therefore expedient to use vapor deposition. Spraying or the like. Applied Layers only have such a thickness that they are at least semiconductor layers represent. It is also useful: as a metal for the layers of chrome because of it good adherence to choose.
In der Abbildung ist im Schnitt ein Beispiel für einen Kristall dargestellt, der nach dem erfindungsgemäßen Verfahren mit je einer dünnen, leitenden Metallschicht auf den den Elektroden zugewandten Flächen versehen ist. in der Abbildung bedeutet i den Kristall, 2 und 3 je eine dünne Metallschicht und ä und 5 die Elektroden.The figure shows an example of a crystal in section, according to the method according to the invention, each with a thin, conductive metal layer is provided on the surfaces facing the electrodes. in the figure means i the crystal, 2 and 3 each a thin metal layer and ä and 5 the electrodes.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEZ993D DE912457C (en) | 1941-08-31 | 1941-08-31 | Method for eliminating flutter phenomena in piezoelectric crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEZ993D DE912457C (en) | 1941-08-31 | 1941-08-31 | Method for eliminating flutter phenomena in piezoelectric crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE912457C true DE912457C (en) | 1954-05-31 |
Family
ID=7617938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEZ993D Expired DE912457C (en) | 1941-08-31 | 1941-08-31 | Method for eliminating flutter phenomena in piezoelectric crystals |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE912457C (en) |
-
1941
- 1941-08-31 DE DEZ993D patent/DE912457C/en not_active Expired
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