DE7836651U1 - Solar cell made from semiconductor material - Google Patents
Solar cell made from semiconductor materialInfo
- Publication number
- DE7836651U1 DE7836651U1 DE7836651U DE7836651U DE7836651U1 DE 7836651 U1 DE7836651 U1 DE 7836651U1 DE 7836651 U DE7836651 U DE 7836651U DE 7836651 U DE7836651 U DE 7836651U DE 7836651 U1 DE7836651 U1 DE 7836651U1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- layer
- cell according
- silicon
- generated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 239000000463 material Substances 0.000 title claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 101150068326 bro1 gene Proteins 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
8521 Spardorf8521 Savings Village
- e8 k - e8 k
Die Hauptanmeldung betrifft eine Solarzelle aus Halbleitermaterial mit einem aktiven Gebiet, in welchemThe main application relates to a solar cell made of semiconductor material with an active region in which Ladungsträger durch die auf die Solarzelle auftreffende und in diese eindringende Energie erzeugt werden, bei der auf dem halbleitenden Körper im aktiven Gebiet eine elektrisch isolierende Schicht mit metallischen Kontakten angeordnet ist, welche als Doppelschicht ausge-Charge carrier through the incident on the solar cell and in this penetrating energy are generated, at the one on the semiconducting body in the active area electrically insulating layer is arranged with metallic contacts, which are designed as a double layer bildet ist und aus einer, auf dem Halbleiterkörper direkt aufgebrachten ersten Schicht aus einer natürlichen oder bei Temperaturen unterhalb 8000C erzeugten Siliziumoxidschicht und einer darüber befindlichen zweiten Schicht aus einem, im Vergleich zur erstenand from a first layer applied directly to the semiconductor body made of a natural silicon oxide layer or a silicon oxide layer produced at temperatures below 800 ° C. and a second layer located above it consisting of a silicon oxide layer compared to the first
Die vorliegende Pmeldung betrifft eine Weiterführung der in der Heaptanmeldung,/insbesondere in Figur 5 beschriebenen Siliziumnitrid-Inversionsschicht-Solarzelle mit pn-Übergängen in den Eontaktbereichen.The present P report relates to a continuation of the heapt report, / in particular in Figure 5 described silicon nitride inversion layer solar cell with pn junctions in the contact areas.
Edt 1 Plr/8.12.1978Edt 1 Plr / December 8th, 1978
- 2 - VPA 78P 8 05 5 BRO- 2 - VPA 78P 8 05 5 BRO
Diese Weiterführung besteht erfindungsgemäß darin, daß im Halbleiterkörper parallel zur Oberfläche ein ganzflächiger pn-übergang angeordnet ist und die zweite isolierende Schicht aus Siliziumnitrid oder Silizium-5 oxinitrid besteht. Die Verbesserung gegenüber herkömmlichen pn-Zellen besteht darin, daß durch die Aufbringung der Siliziumnitridschicht bzw. Siliziumoxinitridschicht die Empfindlichkeit (Quantenwirkungsgrad) Im kurzwelligen Teil des Sonnenspektrums erhöht wird.According to the invention, this continuation consists in that A full-area pn junction is arranged in the semiconductor body parallel to the surface, and the second insulating layer made of silicon nitride or silicon-5 oxinitride. The improvement over conventional pn cells is that the application of the silicon nitride layer or silicon oxynitride layer increases the sensitivity (quantum efficiency) in the short-wave part of the solar spectrum will.
Es liegt im Rahmen des Erfindungsgedankens, daß die Siliziumnitridschicht aus durch Glimmentladung von Silan und Ammoniak erzeugtem Plasmanitrid und der Halbleiterkörper aus einkristallinem, amorphem oder poly kristallinem Silizium besteht.It is within the scope of the inventive concept that the Silicon nitride layer made of plasma nitride produced by a glow discharge of silane and ammonia and the semiconductor body made of monocrystalline, amorphous or poly crystalline silicon.
In einer Weiterbildung des Erfindungsgedankens ist vorgesehen, den pn-übergang durch Ionertfaplantation zu erzeugen und die Tiefe im Halbleiterkörper auf etwa 0.05 bis 0.5 /um einzusxellen.In a further development of the concept of the invention, provision is made for the pn junction to be closed by ionic plantation and the depth in the semiconductor body to about 0.05 to 0.5 / um to ax.
Die weiteren Vorteil der erfindungsgemäßen Solarzelle gegenüber den bekannten Solarzellenanordnungen sind folgende:The further advantage of the solar cell according to the invention compared to the known solar cell arrangements are the following:
1. Die Siliziumnitrid-(Oxid)-Schicht ist ein idealer Antireflexionsbelag für Siliziumsolarzellen (n = 2).1. The silicon nitride (oxide) layer is an ideal anti-reflective coating for silicon solar cells (n = 2).
2. Durch die Siliziumnitridschicht wird ein idealer Schutz gegen das Bindringen von Verunreinigungen in den Halbleiterkörper (Kontaminationsschutz, Oberflächenpassivierung) gewährleistet.2. The silicon nitride layer provides ideal protection against the binding of impurities in the semiconductor body (contamination protection, surface passivation) guaranteed.
3. Elektronische Zustände, sowohl Grenzflächenzustände an der Halbleiter-Isolator Grenzfläche als auch3. Electronic states, both interface states at the semiconductor-insulator interface and
-3- VPA 73P8055 8RO-3- VPA 73P8055 8RO
solche, die die niedrige Lebensdauer der Minoritätsladungsträger im diffundierten Halbleitergebiet bedingen, werden durch den bei der Siliziumnitridabscheidung entstehenden äußerst aktiven Wasserstoffthose which cause the short service life of the minority charge carriers in the diffused semiconductor region are made by the extremely active hydrogen produced during the silicon nitride deposition (3 SiH^ + 4 NH3-* Si3N^ + 12 H2) in ihrer Wirkung als Rekombinationszentren reduziert. Dies hat eine Erniedrigung der Oberflächenrekombinationsgeschwindigkeit und eine Erhöhung der Lebensdauer (Diffusionslänge) der im Oberflächenbereich des Halbleiters(3 SiH ^ + 4 NH 3 - * Si 3 N ^ + 12 H 2 ) reduced in their effect as recombination centers. This has a lowering of the surface recombination speed and an increase in the lifetime (diffusion length) of those in the surface area of the semiconductor erzeugten Minoritätsladungsträger zur Folge, was zu einer höheren Empfindlichkeit der Solarzelle im kurzwelligen Teil des Sonnenspektrums führt.generated minority charge carriers result, which leads to a higher sensitivity of the solar cell in the short-wave part of the solar spectrum.
Weitere Einzelheiten werden an einem Ausführungsbeispiel % 15 anhand der in der Zeichnung befindlichen Figur, welche im Schnittbild eine Siliziumnitrid-Solarzelle mit ganzFurther details will be of an exemplary embodiment with reference to the 15% located in the drawing figure which in a sectional view a silicon solar cell with very flächigem pn-übergang und Metallkontakten darstellt,flat pn junction and metal contacts, noch näher erläutert.explained in more detail.
t 20 In der Figur ist der p-dotierte Siliziumkörper mit 1, § der Rückkontakt der Solarzellenanoi'dnung mit 2 be- t 20 In the figure, the p-doped silicon body is denoted by 1, § the back contact of the solar cell assembly is denoted by 2
zeichnet. Die in der Figur dargestellte Doppelisolatordraws. The double insulator shown in the figure schicht besteht aus der natürlich gewachsenen dünnenlayer consists of the naturally grown thin
r· SiOg-Schicht 3 und einer dickeren (ca. 80 am) Silizium-r SiOg layer 3 and a thicker (approx. 80 am) silicon
nitridschicht 4, welche in einer Glimmentladung durch Reaktion von Silan mit Ammoniak bei ungefähr 3000C hergestellt worden ist. Diese Schicht 4 kann auf der gesamten Zellenoberfläche abgeschieden werden, wobei vor der Abscheidung die Metallkontakte 5 aus Ασηπτη·um aufgedampft werden müssen. Es ist aber auch möglich, daß sich die Siliziumnitridschicht 4 nur zwischen den Metallkontakten (metal grid) befindet, wobei ein Foton&skierungsschritt erforderlich ist, um die Kontaktflächen freizulegen. 35nitride layer 4, which has been produced in a glow discharge by reacting silane with ammonia at about 300 0 C. This layer 4 can be deposited on the entire cell surface, the metal contacts 5 having to be vapor-deposited from Α σ η π τη · um before the deposition. It is also possible, however, for the silicon nitride layer 4 to be located only between the metal contacts (metal grid), a photon and sketching step being required in order to expose the contact areas. 35
- 4 - VPA 78 P 8 O 5 5 8RO- 4 - VPA 78 P 8 O 5 5 8RO
pn-übergang 6 wird erzeugt durch Ionenimplantation von Phosphor oder Arsen in einer Tiefe von 0.2 /um.pn junction 6 is produced by ion implantation of phosphorus or arsenic at a depth of 0.2 μm.
Die Kontaktierung des Metallfingersystems 5 (metal grid) erfolgt durch ein in die Siliziumnitridschicht 4 eingeätztes Fenster im Bereich eines Metallkontaktes.The metal finger system 5 (metal grid) is contacted by means of a layer that is etched into the silicon nitride layer 4 Window in the area of a metal contact.
Im Wellenlängenbereich von 450 - 650 mn konnte gegenüber einer analogen Solarzelle ohne Si-Nitridschicht ein um 50 % höherer Quantenwirkungsgrad erzielt -werden.In the wavelength range from 450 - 650 mn, opposite an analog solar cell without Si nitride layer a 50% higher quantum efficiency can be achieved.
Drastische Verbesserungen durch das Si-Nitrid sind bei Solarzellen aus polykristallinem und amorphem Halbleitermaterial aufgrund der hohen Dichte von Rekombinationszentren zu erwarten. Bei GaAs-Solarzellen, bei denen ein wesentlich größerer Anteil von Ladungsträgern im Oberflächenbereich erzeugt wird, ist diese Methode besonders vorteilhaft.Drastic improvements through the Si nitride are in solar cells made of polycrystalline and amorphous semiconductor material expected due to the high density of recombination centers. For GaAs solar cells, at where a significantly larger proportion of charge carriers is generated in the surface area, this method is particularly advantageous.
8 c sprüche
1 Figur8 c proverbs
1 figure
VPA 78 P 8 0 5 5 BRDVPA 78 P 8 0 5 5 FRG
Die Erfindung betrifft eine Solarzellenanordnung aus Halbleitermaterial mit einem parallel zur Oberfläche verlaufenden ganzflächigen pn-übergang, bei der auf dem halbleitenden Körper eine elektrisch-isolierende Doppelschicht bestehend aus SiO2 und Plasmanitrid angeordnet ist.The invention relates to a solar cell arrangement made of semiconductor material with a full-area pn junction running parallel to the surface, in which an electrically insulating double layer consisting of SiO 2 and plasma nitride is arranged on the semiconducting body.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE7836651U DE7836651U1 (en) | 1978-12-11 | 1978-12-11 | Solar cell made from semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE7836651U DE7836651U1 (en) | 1978-12-11 | 1978-12-11 | Solar cell made from semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE7836651U1 true DE7836651U1 (en) | 1986-08-07 |
Family
ID=6697777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE7836651U Expired DE7836651U1 (en) | 1978-12-11 | 1978-12-11 | Solar cell made from semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE7836651U1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3725338A1 (en) * | 1987-07-30 | 1989-02-09 | Nukem Gmbh | ENCLOSURE OF A PHOTOVOLTAIC ELEMENT |
-
1978
- 1978-12-11 DE DE7836651U patent/DE7836651U1/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3725338A1 (en) * | 1987-07-30 | 1989-02-09 | Nukem Gmbh | ENCLOSURE OF A PHOTOVOLTAIC ELEMENT |
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