DE713635C - Electrically semiconducting ground - Google Patents

Electrically semiconducting ground

Info

Publication number
DE713635C
DE713635C DES135175D DES0135175D DE713635C DE 713635 C DE713635 C DE 713635C DE S135175 D DES135175 D DE S135175D DE S0135175 D DES0135175 D DE S0135175D DE 713635 C DE713635 C DE 713635C
Authority
DE
Germany
Prior art keywords
mass
metal particles
electrically semiconducting
semiconducting
masses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DES135175D
Other languages
German (de)
Inventor
Hans Wassmansdorff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to DES135175D priority Critical patent/DE713635C/en
Application granted granted Critical
Publication of DE713635C publication Critical patent/DE713635C/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/24Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Description

Elektrisch halbleitende Masse Für verschiedene elektrische Zwecke' insbesondere zur Abschirmung elektrischer Fernmeldekabel, Hochspannungskabel für Widerstandsmassen o.- dgl., finden halbleitende Massen Verwendung. Derartige Massen bestehen in der Regel aus elastischen oder wärmebildsamen Isolierstoffen, insbesondere Gummi oder gummiähnlichen Stoffen, die durch Beimengung elektrisch leitender Stoffe, wie Graphit. Ruß u. dgl., leitfähig gemacht wurden. Die Leitfähigkeit solcher Massen ist aber auch bei -verhältnismäßig großen Volumenanteilen der leitenden Stoffe gering. Andererseits wurde auch bereits versucht, halbleitende Stoffe durch Beimengung von Metallpulver zu Isolierstoffen zu erzielen, ohne auf diese Weise aber zu befriedigenden Ergebnissen zu gelangen. Ferner sind Widerstandsmassen bekanntgeworden, die aus einem Gemisch aus leitfähigen Stoffen und Isolierstoffen bestehen und denen ein Metall in äußerster. Blattfeinheit beigemischt ist, das als Isoliermaterial wirkt.Electrically semiconducting mass For various electrical purposes' especially for shielding electrical telecommunication cables, high-voltage cables for Resistance masses or the like, semiconducting masses are used. Such masses usually consist of elastic or heat-forming insulating materials, in particular Rubber or rubber-like substances, which by adding electrically conductive substances, like graphite. Soot and the like, were made conductive. The conductivity of such masses but is also small with relatively large proportions of the volume of the conductive substances. On the other hand, attempts have already been made to add semiconducting substances by adding To achieve metal powder for insulating materials, but without being satisfactory in this way To get results. Resistance masses have also become known that consist of consist of a mixture of conductive materials and insulating materials and which are a Metal in the utmost. Leaf fineness is added, which acts as an insulating material.

Gemäß der Erfindung kann die Leitfähigkeit halbleitender Massen dadurch gesteigert werden, daß diesen bereits halbleitenden Massen zusätzlich blättchen- oder drahtförmige Metallteilchen beigemischt werden. Die Leitfähigkeit der Masse kann durch Änderung des Anteils der beigemischten Metallt3ilchen weitgehend beeinflußt werden. Eine weitere Beeinflussung bzw. Erhöhung der Leitfähigkeit in einer Richtung kann dadurch erfolgen, daß z. B. durch entsprechende Behandlung, wie (falzen o. dgl., für eine Ausrichtung der Metallteilchen in einer bevorzugten Richtung gesorgt wird.According to the invention, the conductivity of semiconducting masses can thereby be increased so that these already semiconducting masses are additionally lamellar or wire-shaped metal particles are mixed in. The conductivity of the mass can be largely influenced by changing the proportion of added metal particles will. Another influence or increase in conductivity in one direction can be done in that z. B. by appropriate treatment, such as (folding o. Like., for alignment of the metal particles in a preferred direction will.

Die Wirkung der Maßnahme gemäß der Erfindung beruht darauf, daß die eingebetteten Metallteilchen zu einem wesentlichen Teil die Leitung des Stromes übernehmen. Nur an den LTberbrückungsstellen zwischen den einzelnen Teilchen übernimmt die halbleitende Masse selbst die Stromleitung.The effect of the measure according to the invention is based on the fact that the embedded metal particles to a large extent conduct the electricity take over. Only takes over at the bridging points between the individual particles the semiconducting mass itself is the power line.

Zur Erläuterung dient die Zeichnung, in der in vergrößertem Maßstab ein Ausschnitt aus einer gemäß der Erfindung h-,rgestellten Masse gezeigt ist. In der beispielsweise aus einer Gummirußmischung bestehenden halbleitenden Masse sind kurze Drahtstückchen 2 von einigen Millimetern Länge eingebettet, wobei durch entsprechendes Walzen dafür gesorgt ist, daß diese Drahtstückchen in einer bevorzugten Richtung weitgehend ausgerichtet sind.The drawing serves as an explanation, on an enlarged scale a section of a mass produced according to the invention is shown. In the semiconducting mass consisting, for example, of a rubber soot mixture short pieces of wire 2 of a few millimeters in length embedded, with corresponding Rolling ensures that these pieces of wire are in a preferred direction are largely aligned.

Claims (2)

PATENTANSPRÜCHE: i. Elektrisch halbleitende Masse aus durch Beimengung leitender Stoffe, wie Graphit. Ruß o. dgl., leitfähig gemachtem elektrischem Isolierstoff, gekennzeichnet durch zusätzlich eingebettete blättchen-oder drahtförmige Metallteilchen. PATENT CLAIMS: i. Electrically semiconducting mass made by admixture conductive materials such as graphite. Soot or the like, electrical insulating material made conductive, characterized by additionally embedded lamellar or wire-shaped metal particles. 2. Masse nach Anspruch i, dadurch gekennzeichnet, daß die Metallteilchen z. B. durch geeignete mechanische Behandlung der Masse, wie Walzen o. dgl., in einer bevorzugten Richtung ausgerichtet sind.2. Composition according to claim i, characterized in that the metal particles z. B. by suitable mechanical treatment of the mass, such as rolling or the like, in a preferred Direction are aligned.
DES135175D 1938-12-25 1938-12-25 Electrically semiconducting ground Expired DE713635C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES135175D DE713635C (en) 1938-12-25 1938-12-25 Electrically semiconducting ground

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES135175D DE713635C (en) 1938-12-25 1938-12-25 Electrically semiconducting ground

Publications (1)

Publication Number Publication Date
DE713635C true DE713635C (en) 1941-11-12

Family

ID=7539926

Family Applications (1)

Application Number Title Priority Date Filing Date
DES135175D Expired DE713635C (en) 1938-12-25 1938-12-25 Electrically semiconducting ground

Country Status (1)

Country Link
DE (1) DE713635C (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1028403B (en) * 1956-06-02 1958-04-17 Kabel Und Metallwerke Neumeyer Protective electrode for cathodic corrosion protection of metal pipes laid in the ground or electrical metal-sheathed cables
DE1035251B (en) * 1952-08-23 1958-07-31 Siemens Ag Pressure-dependent resistance element for purposes of regulating, controlling, amplifying, rectifying or the like.
DE1238987B (en) * 1961-08-10 1967-04-20 Siemens Ag Semiconductor body for components with directional electrical properties
DE3613060A1 (en) * 1986-04-18 1987-10-22 Herberts Gmbh COATING AGENTS WITH HIGH ELECTRICAL CONDUCTIVITY AND THE USE THEREOF FOR THE PRODUCTION OF COATING

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1035251B (en) * 1952-08-23 1958-07-31 Siemens Ag Pressure-dependent resistance element for purposes of regulating, controlling, amplifying, rectifying or the like.
DE1028403B (en) * 1956-06-02 1958-04-17 Kabel Und Metallwerke Neumeyer Protective electrode for cathodic corrosion protection of metal pipes laid in the ground or electrical metal-sheathed cables
DE1238987B (en) * 1961-08-10 1967-04-20 Siemens Ag Semiconductor body for components with directional electrical properties
DE3613060A1 (en) * 1986-04-18 1987-10-22 Herberts Gmbh COATING AGENTS WITH HIGH ELECTRICAL CONDUCTIVITY AND THE USE THEREOF FOR THE PRODUCTION OF COATING

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