DE69921383D1 - Regelung kritischer Abmessungen - Google Patents

Regelung kritischer Abmessungen

Info

Publication number
DE69921383D1
DE69921383D1 DE69921383T DE69921383T DE69921383D1 DE 69921383 D1 DE69921383 D1 DE 69921383D1 DE 69921383 T DE69921383 T DE 69921383T DE 69921383 T DE69921383 T DE 69921383T DE 69921383 D1 DE69921383 D1 DE 69921383D1
Authority
DE
Germany
Prior art keywords
control
critical dimensions
critical
dimensions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69921383T
Other languages
English (en)
Other versions
DE69921383T2 (de
Inventor
Andreas Grassmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE69921383D1 publication Critical patent/DE69921383D1/de
Publication of DE69921383T2 publication Critical patent/DE69921383T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69921383T 1998-03-30 1999-03-22 Regelung kritischer Abmessungen Expired - Fee Related DE69921383T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7994298P 1998-03-30 1998-03-30
US79942P 1998-03-30

Publications (2)

Publication Number Publication Date
DE69921383D1 true DE69921383D1 (de) 2004-12-02
DE69921383T2 DE69921383T2 (de) 2005-10-27

Family

ID=22153808

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69921383T Expired - Fee Related DE69921383T2 (de) 1998-03-30 1999-03-22 Regelung kritischer Abmessungen

Country Status (6)

Country Link
EP (1) EP0947881B1 (de)
JP (1) JPH11312644A (de)
KR (1) KR100598255B1 (de)
CN (1) CN1160763C (de)
DE (1) DE69921383T2 (de)
TW (1) TW451432B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168159A (ja) * 1999-12-03 2001-06-22 Sony Corp 検査装置及び検査方法
CN101826456B (zh) * 2009-03-02 2012-05-30 中芯国际集成电路制造(上海)有限公司 改善栅极特征线宽均匀性的方法
CN111198481B (zh) * 2020-03-10 2023-03-31 田菱精密制版（深圳）有限公司 一种快速测算感光胶基准曝光能量的工艺方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6223126A (ja) * 1985-07-23 1987-01-31 Nec Corp ド−ズ量測定方法
US5124216A (en) * 1990-07-31 1992-06-23 At&T Bell Laboratories Method for monitoring photoresist latent images
US5674652A (en) * 1991-02-28 1997-10-07 University Of New Mexico Diffracted light from latent images in photoresist for exposure control
US6063530A (en) * 1997-06-23 2000-05-16 Siemens Aktiengesellschaft Control of critical dimensions through measurement of absorbed radiation

Also Published As

Publication number Publication date
TW451432B (en) 2001-08-21
EP0947881B1 (de) 2004-10-27
EP0947881A2 (de) 1999-10-06
KR19990078381A (ko) 1999-10-25
CN1245973A (zh) 2000-03-01
KR100598255B1 (ko) 2006-07-07
EP0947881A3 (de) 2001-07-11
CN1160763C (zh) 2004-08-04
DE69921383T2 (de) 2005-10-27
JPH11312644A (ja) 1999-11-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee