DE69841775D1 - Rf leistungsanordnung mit spannungsgesteuerter linearität - Google Patents

Rf leistungsanordnung mit spannungsgesteuerter linearität

Info

Publication number
DE69841775D1
DE69841775D1 DE69841775T DE69841775T DE69841775D1 DE 69841775 D1 DE69841775 D1 DE 69841775D1 DE 69841775 T DE69841775 T DE 69841775T DE 69841775 T DE69841775 T DE 69841775T DE 69841775 D1 DE69841775 D1 DE 69841775D1
Authority
DE
Germany
Prior art keywords
voltage
power arrangement
linearity
controlled
controlled linearity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841775T
Other languages
English (en)
Inventor
Francois Hebert
James R Parker
Daniel Szehim Ng
Howard D Bartlow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
F Poszat HU LLC
Original Assignee
Rovec Acquisitions Ltd LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rovec Acquisitions Ltd LLC filed Critical Rovec Acquisitions Ltd LLC
Application granted granted Critical
Publication of DE69841775D1 publication Critical patent/DE69841775D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69841775T 1997-08-06 1998-08-05 Rf leistungsanordnung mit spannungsgesteuerter linearität Expired - Lifetime DE69841775D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/906,741 US5898198A (en) 1997-08-04 1997-08-06 RF power device having voltage controlled linearity
PCT/US1998/016295 WO1999008323A1 (en) 1997-08-06 1998-08-05 Rf power device having voltage controlled linearity

Publications (1)

Publication Number Publication Date
DE69841775D1 true DE69841775D1 (de) 2010-09-02

Family

ID=25422905

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841775T Expired - Lifetime DE69841775D1 (de) 1997-08-06 1998-08-05 Rf leistungsanordnung mit spannungsgesteuerter linearität

Country Status (7)

Country Link
US (1) US5898198A (de)
EP (1) EP1016139B1 (de)
JP (1) JP2001512907A (de)
KR (1) KR100550148B1 (de)
AU (1) AU8770098A (de)
DE (1) DE69841775D1 (de)
WO (1) WO1999008323A1 (de)

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US6086886A (en) * 1998-10-22 2000-07-11 Jarrow Formulas, Inc. Composition for promoting intestinal health
KR100340925B1 (ko) 2000-11-04 2002-06-20 오길록 고주파용 전력소자 및 그의 제조 방법
US6649975B2 (en) 2000-11-16 2003-11-18 Silicon Semiconductor Corporation Vertical power devices having trench-based electrodes therein
US6555883B1 (en) * 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6870219B2 (en) * 2002-07-31 2005-03-22 Motorola, Inc. Field effect transistor and method of manufacturing same
US7253486B2 (en) * 2002-07-31 2007-08-07 Freescale Semiconductor, Inc. Field plate transistor with reduced field plate resistance
EP1408552A1 (de) * 2002-10-09 2004-04-14 STMicroelectronics S.r.l. Integriertes MOS-Halbleiterbauelement mit grosser Leistungsfähigkeit und Verfahren zu seiner Herstellung
US7652316B2 (en) * 2003-04-22 2010-01-26 Dsp Group Switzerland Ag Semiconductor transistor (DMOS) device for use as a power amplifier
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
GB0326030D0 (en) * 2003-11-06 2003-12-10 Koninkl Philips Electronics Nv Insulated gate field effect transistor
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US20060043479A1 (en) * 2004-09-02 2006-03-02 Patrice Parris Metal oxide semiconductor device including a shielding structure for low gate-drain capacitance
US20080291973A1 (en) * 2004-11-16 2008-11-27 Acco Integrated Ultra-Wideband (Uwb) Pulse Generator
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP4772110B2 (ja) * 2005-03-31 2011-09-14 ビーエーエスエフ ソシエタス・ヨーロピア 接着促進剤としてのポリペプチド使用方法
US8008731B2 (en) * 2005-10-12 2011-08-30 Acco IGFET device having a RF capability
US7768064B2 (en) * 2006-01-05 2010-08-03 Fairchild Semiconductor Corporation Structure and method for improving shielded gate field effect transistors
JP5105160B2 (ja) * 2006-11-13 2012-12-19 クリー インコーポレイテッド トランジスタ
WO2008076822A2 (en) * 2006-12-15 2008-06-26 Lehigh University Adaptive bias technique for field effect transistor
US8564057B1 (en) * 2007-01-09 2013-10-22 Maxpower Semiconductor, Inc. Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield
US20080185629A1 (en) * 2007-02-01 2008-08-07 Denso Corporation Semiconductor device having variable operating information
US8928410B2 (en) 2008-02-13 2015-01-06 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US7969243B2 (en) * 2009-04-22 2011-06-28 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US9240402B2 (en) 2008-02-13 2016-01-19 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US7863645B2 (en) * 2008-02-13 2011-01-04 ACCO Semiconductor Inc. High breakdown voltage double-gate semiconductor device
US7807576B2 (en) * 2008-06-20 2010-10-05 Fairchild Semiconductor Corporation Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
US8829624B2 (en) * 2008-06-30 2014-09-09 Fairchild Semiconductor Corporation Power device with monolithically integrated RC snubber
US7808415B1 (en) * 2009-03-25 2010-10-05 Acco Semiconductor, Inc. Sigma-delta modulator including truncation and applications thereof
US7952431B2 (en) * 2009-08-28 2011-05-31 Acco Semiconductor, Inc. Linearization circuits and methods for power amplification
US8532584B2 (en) 2010-04-30 2013-09-10 Acco Semiconductor, Inc. RF switches
KR101687772B1 (ko) * 2010-12-31 2016-12-21 에스케이하이닉스 주식회사 반도체 소자
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9786613B2 (en) * 2014-08-07 2017-10-10 Qualcomm Incorporated EMI shield for high frequency layer transferred devices
US9559199B2 (en) 2014-12-18 2017-01-31 Silanna Asia Pte Ltd LDMOS with adaptively biased gate-shield
US11171215B2 (en) 2014-12-18 2021-11-09 Silanna Asia Pte Ltd Threshold voltage adjustment using adaptively biased shield plate
EP3419050A1 (de) * 2017-06-23 2018-12-26 ams International AG Strahlungsgehärtetes gehäuse für eine elektronische vorrichtung und verfahren zur herstellung eines strahlungsgehärteten gehäuses
WO2024037906A1 (en) * 2022-08-15 2024-02-22 Signify Holding B.V. Half bridge switch node shielded from input voltage and ground

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Also Published As

Publication number Publication date
EP1016139A1 (de) 2000-07-05
US5898198A (en) 1999-04-27
KR100550148B1 (ko) 2006-02-08
KR20010022576A (ko) 2001-03-26
WO1999008323A9 (en) 1999-04-29
EP1016139B1 (de) 2010-07-21
WO1999008323A1 (en) 1999-02-18
AU8770098A (en) 1999-03-01
EP1016139A4 (de) 2001-02-21
JP2001512907A (ja) 2001-08-28

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