DE69735986D1 - Method and apparatus for plasma ion implantation by means of a pulsed plate - Google Patents

Method and apparatus for plasma ion implantation by means of a pulsed plate

Info

Publication number
DE69735986D1
DE69735986D1 DE69735986T DE69735986T DE69735986D1 DE 69735986 D1 DE69735986 D1 DE 69735986D1 DE 69735986 T DE69735986 T DE 69735986T DE 69735986 T DE69735986 T DE 69735986T DE 69735986 D1 DE69735986 D1 DE 69735986D1
Authority
DE
Germany
Prior art keywords
ion implantation
plasma ion
pulsed plate
pulsed
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69735986T
Other languages
German (de)
Inventor
Jiqun Shao
Alec Stuart Denholm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eaton Corp
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/728,000 external-priority patent/US5654043A/en
Application filed by Eaton Corp filed Critical Eaton Corp
Application granted granted Critical
Publication of DE69735986D1 publication Critical patent/DE69735986D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
DE69735986T 1996-10-10 1997-10-07 Method and apparatus for plasma ion implantation by means of a pulsed plate Expired - Lifetime DE69735986D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/728,000 US5654043A (en) 1996-10-10 1996-10-10 Pulsed plate plasma implantation system and method

Publications (1)

Publication Number Publication Date
DE69735986D1 true DE69735986D1 (en) 2006-07-06

Family

ID=24925020

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69735986T Expired - Lifetime DE69735986D1 (en) 1996-10-10 1997-10-07 Method and apparatus for plasma ion implantation by means of a pulsed plate

Country Status (4)

Country Link
KR (1) KR19980032745A (en)
DE (1) DE69735986D1 (en)
SG (1) SG101917A1 (en)
TW (1) TW328139B (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091629A (en) * 1983-10-25 1985-05-23 Nec Corp Plasma vapor growing device
JPH01185918A (en) * 1988-01-21 1989-07-25 Fuji Electric Co Ltd Apparatus for introduction of impurity into semiconductor substrate
JPH0536620A (en) * 1991-07-25 1993-02-12 Canon Inc Semiconductor surface treatment method and equipment
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
JPH0786603A (en) * 1993-09-16 1995-03-31 Sharp Corp Manufacture of semiconductor film
KR0137704B1 (en) * 1994-11-25 1998-06-01 κΉ€μ€μ˜ Dual mode plasma source ion implantation apparatus and surface modification

Also Published As

Publication number Publication date
KR19980032745A (en) 1998-07-25
SG101917A1 (en) 2004-02-27
TW328139B (en) 1998-03-11

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Legal Events

Date Code Title Description
8332 No legal effect for de