DE69703031T2 - Erzeugung eines gleichmässigen ionenstrahls grosser oberfläche - Google Patents

Erzeugung eines gleichmässigen ionenstrahls grosser oberfläche

Info

Publication number
DE69703031T2
DE69703031T2 DE69703031T DE69703031T DE69703031T2 DE 69703031 T2 DE69703031 T2 DE 69703031T2 DE 69703031 T DE69703031 T DE 69703031T DE 69703031 T DE69703031 T DE 69703031T DE 69703031 T2 DE69703031 T2 DE 69703031T2
Authority
DE
Germany
Prior art keywords
generation
large surface
uniform ion
ion ray
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69703031T
Other languages
English (en)
Other versions
DE69703031D1 (de
Inventor
G Blake
H Purser
A Brailove
H Rose
J Hughey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/756,656 external-priority patent/US5825038A/en
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of DE69703031D1 publication Critical patent/DE69703031D1/de
Application granted granted Critical
Publication of DE69703031T2 publication Critical patent/DE69703031T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69703031T 1996-02-16 1997-02-14 Erzeugung eines gleichmässigen ionenstrahls grosser oberfläche Expired - Fee Related DE69703031T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60198396A 1996-02-16 1996-02-16
US08/756,656 US5825038A (en) 1996-11-26 1996-11-26 Large area uniform ion beam formation
PCT/US1997/002481 WO1997030466A1 (en) 1996-02-16 1997-02-14 Large area uniform ion beam formation

Publications (2)

Publication Number Publication Date
DE69703031D1 DE69703031D1 (de) 2000-10-12
DE69703031T2 true DE69703031T2 (de) 2001-05-03

Family

ID=27084014

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69703031T Expired - Fee Related DE69703031T2 (de) 1996-02-16 1997-02-14 Erzeugung eines gleichmässigen ionenstrahls grosser oberfläche

Country Status (6)

Country Link
EP (1) EP0880793B1 (de)
JP (1) JP4178329B2 (de)
KR (1) KR100439936B1 (de)
AU (1) AU2276797A (de)
DE (1) DE69703031T2 (de)
WO (1) WO1997030466A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100509964B1 (ko) * 2003-03-07 2005-08-24 엘지.필립스 엘시디 주식회사 이온도핑장치
JP5477652B2 (ja) * 2010-09-07 2014-04-23 日新イオン機器株式会社 イオン注入方法及びイオン注入装置
JP5863153B2 (ja) * 2012-10-29 2016-02-16 日新イオン機器株式会社 イオン注入装置
CN114724910A (zh) * 2022-06-10 2022-07-08 浙江中科尚弘离子装备工程有限公司 一种带状离子束注入系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902898A (en) * 1988-04-26 1990-02-20 Microelectronics Center Of North Carolina Wand optics column and associated array wand and charged particle source
US4952843A (en) * 1989-03-08 1990-08-28 Brown Ian G High current ion source
US5026997A (en) * 1989-11-13 1991-06-25 Eaton Corporation Elliptical ion beam distribution method and apparatus

Also Published As

Publication number Publication date
KR19990082591A (ko) 1999-11-25
EP0880793B1 (de) 2000-09-06
JP2001515643A (ja) 2001-09-18
DE69703031D1 (de) 2000-10-12
WO1997030466A1 (en) 1997-08-21
JP4178329B2 (ja) 2008-11-12
AU2276797A (en) 1997-09-02
KR100439936B1 (ko) 2004-11-08
EP0880793A1 (de) 1998-12-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee