DE69510384D1 - Schwebende Diffusionsstruktur niederer Kapazität für einen Festkörperbildwandler - Google Patents

Schwebende Diffusionsstruktur niederer Kapazität für einen Festkörperbildwandler

Info

Publication number
DE69510384D1
DE69510384D1 DE69510384T DE69510384T DE69510384D1 DE 69510384 D1 DE69510384 D1 DE 69510384D1 DE 69510384 T DE69510384 T DE 69510384T DE 69510384 T DE69510384 T DE 69510384T DE 69510384 D1 DE69510384 D1 DE 69510384D1
Authority
DE
Germany
Prior art keywords
solid
imaging device
state imaging
diffusion structure
floating low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69510384T
Other languages
English (en)
Other versions
DE69510384T2 (de
Inventor
Robert M Guidash
Antonio S Ciccarelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE69510384D1 publication Critical patent/DE69510384D1/de
Publication of DE69510384T2 publication Critical patent/DE69510384T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69510384T 1994-01-26 1995-01-14 Schwebende Diffusionsstruktur niederer Kapazität für einen Festkörperbildwandler Expired - Lifetime DE69510384T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/188,500 US5387536A (en) 1994-01-26 1994-01-26 Method of making a low capacitance floating diffusion structure for a solid state image sensor

Publications (2)

Publication Number Publication Date
DE69510384D1 true DE69510384D1 (de) 1999-07-29
DE69510384T2 DE69510384T2 (de) 2000-01-13

Family

ID=22693413

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510384T Expired - Lifetime DE69510384T2 (de) 1994-01-26 1995-01-14 Schwebende Diffusionsstruktur niederer Kapazität für einen Festkörperbildwandler

Country Status (4)

Country Link
US (2) US5387536A (de)
EP (1) EP0665598B1 (de)
JP (1) JP3842826B2 (de)
DE (1) DE69510384T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
US5591997A (en) * 1995-01-17 1997-01-07 Eastman Kodak Company Low capacitance floating diffusion structure for a solid state image sensor
KR100223826B1 (ko) * 1997-06-04 1999-10-15 구본준 씨씨디(ccd) 영상소자의 제조방법
FR2781929B1 (fr) * 1998-07-28 2002-08-30 St Microelectronics Sa Capteur d'image a reseau de photodiodes
JP2002118249A (ja) * 2000-10-06 2002-04-19 Sony Corp 固体撮像素子
FR2820882B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodetecteur a trois transistors
FR2820883B1 (fr) 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
FR2824665B1 (fr) * 2001-05-09 2004-07-23 St Microelectronics Sa Photodetecteur de type cmos
JP4004891B2 (ja) * 2002-08-19 2007-11-07 富士フイルム株式会社 Ｃｃｄ型固体撮像装置
JP4354315B2 (ja) 2004-03-22 2009-10-28 東芝機械株式会社 アルミニウム溶湯接触部材およびその製造方法
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
JP5132102B2 (ja) * 2006-08-01 2013-01-30 キヤノン株式会社 光電変換装置および光電変換装置を用いた撮像システム
JP5305622B2 (ja) * 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2533371B1 (fr) * 1982-09-21 1985-12-13 Thomson Csf Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure
NL8301629A (nl) * 1983-05-09 1984-12-03 Philips Nv Halfgeleiderinrichting.
US4594604A (en) * 1983-10-21 1986-06-10 Westinghouse Electric Corp. Charge coupled device with structures for forward scuppering to reduce noise
JPH079981B2 (ja) * 1985-02-05 1995-02-01 ソニー株式会社 電荷転送装置
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
US5288651A (en) * 1989-11-09 1994-02-22 Kabushiki Kaisha Toshiba Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD
US5151380A (en) * 1991-08-19 1992-09-29 Texas Instruments Incorporated Method of making top buss virtual phase frame interline transfer CCD image sensor
US5341008A (en) * 1993-09-21 1994-08-23 Texas Instruments Incorporated Bulk charge modulated device photocell with lateral charge drain

Also Published As

Publication number Publication date
EP0665598A2 (de) 1995-08-02
JPH07263662A (ja) 1995-10-13
DE69510384T2 (de) 2000-01-13
US5621230A (en) 1997-04-15
US5387536A (en) 1995-02-07
JP3842826B2 (ja) 2006-11-08
EP0665598B1 (de) 1999-06-23
EP0665598A3 (de) 1995-09-13

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