DE69413266D1 - Basisstromreglungsschaltung eines Ausgangstransistors - Google Patents

Basisstromreglungsschaltung eines Ausgangstransistors

Info

Publication number
DE69413266D1
DE69413266D1 DE69413266T DE69413266T DE69413266D1 DE 69413266 D1 DE69413266 D1 DE 69413266D1 DE 69413266 T DE69413266 T DE 69413266T DE 69413266 T DE69413266 T DE 69413266T DE 69413266 D1 DE69413266 D1 DE 69413266D1
Authority
DE
Germany
Prior art keywords
control circuit
current control
output transistor
base current
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69413266T
Other languages
English (en)
Other versions
DE69413266T2 (de
Inventor
Changsik Im
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE69413266D1 publication Critical patent/DE69413266D1/de
Application granted granted Critical
Publication of DE69413266T2 publication Critical patent/DE69413266T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
DE69413266T 1993-01-27 1994-01-07 Basisstromreglungsschaltung eines Ausgangstransistors Expired - Fee Related DE69413266T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930001003 1993-01-27

Publications (2)

Publication Number Publication Date
DE69413266D1 true DE69413266D1 (de) 1998-10-22
DE69413266T2 DE69413266T2 (de) 1999-04-01

Family

ID=19350024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413266T Expired - Fee Related DE69413266T2 (de) 1993-01-27 1994-01-07 Basisstromreglungsschaltung eines Ausgangstransistors

Country Status (5)

Country Link
US (1) US5486781A (de)
EP (1) EP0608974B1 (de)
JP (1) JP3363980B2 (de)
CN (1) CN1093996C (de)
DE (1) DE69413266T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4402340C1 (de) * 1994-01-27 1995-05-24 Bosch Gmbh Robert Integrierte Schaltung
CN100341248C (zh) * 2002-04-27 2007-10-03 盛群半导体股份有限公司 电流控制的电流/电压转换装置
US7253678B2 (en) * 2005-03-07 2007-08-07 Analog Devices, Inc. Accurate cascode bias networks
US8519788B2 (en) 2010-04-19 2013-08-27 Rf Micro Devices, Inc. Boost charge-pump with fractional ratio and offset loop for supply modulation
DE102012111989A1 (de) 2012-12-07 2014-06-12 Flex-Elektrowerkzeuge Gmbh Handgehaltene Schleifmaschine
WO2014186765A1 (en) 2013-05-17 2014-11-20 Cirrus Logic, Inc. Single pin control of bipolar junction transistor (bjt)-based power stage
US9735671B2 (en) 2013-05-17 2017-08-15 Cirrus Logic, Inc. Charge pump-based drive circuitry for bipolar junction transistor (BJT)-based power supply
WO2015017315A1 (en) 2013-07-29 2015-02-05 Cirrus Logic, Inc. Compensating for a reverse recovery time period of a bipolar junction transistor (bjt) in switch-mode operation of a light-emitting diode (led)-based bulb
US9496855B2 (en) 2013-07-29 2016-11-15 Cirrus Logic, Inc. Two terminal drive of bipolar junction transistor (BJT) of a light emitting diode (LED)-based bulb
US20160164279A1 (en) * 2014-12-09 2016-06-09 Infineon Technologies Ag Circuit and method for measuring a current
US9504118B2 (en) 2015-02-17 2016-11-22 Cirrus Logic, Inc. Resistance measurement of a resistor in a bipolar junction transistor (BJT)-based power stage
US9609701B2 (en) 2015-02-27 2017-03-28 Cirrus Logic, Inc. Switch-mode drive sensing of reverse recovery in bipolar junction transistor (BJT)-based power converters
US9603206B2 (en) 2015-02-27 2017-03-21 Cirrus Logic, Inc. Detection and control mechanism for tail current in a bipolar junction transistor (BJT)-based power stage

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213068A (en) * 1978-01-30 1980-07-15 Rca Corporation Transistor saturation control
US4733163A (en) * 1987-01-02 1988-03-22 Motorola, Inc. Digitally controlled current source
EP0369048A1 (de) * 1988-11-15 1990-05-23 Siemens Aktiengesellschaft Schaltungsanordnung zur Laststromregelung in einem Leistungs-MOSFET
IT1228842B (it) * 1989-02-21 1991-07-05 Sgs Thomson Microelectronics Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore.
US5021687A (en) * 1990-02-01 1991-06-04 National Semiconductor Corporation High speed inverting hysteresis TTL buffer circuit
IT1248607B (it) * 1991-05-21 1995-01-19 Cons Ric Microelettronica Circuito di pilotaggio di un transistore di potenza con una corrente di base funzione predeterminata di quella di collettore
US5271399A (en) * 1991-11-27 1993-12-21 Trustees Of The University Of Pennsylvania Three dimensional Fourier transform, fast spin echo, black blood magnetic resonance angtography
US5272392A (en) * 1992-12-04 1993-12-21 North American Philips Corporation Current limited power semiconductor device

Also Published As

Publication number Publication date
EP0608974A3 (de) 1994-10-12
JPH06252720A (ja) 1994-09-09
EP0608974A2 (de) 1994-08-03
US5486781A (en) 1996-01-23
CN1093508A (zh) 1994-10-12
DE69413266T2 (de) 1999-04-01
JP3363980B2 (ja) 2003-01-08
EP0608974B1 (de) 1998-09-16
CN1093996C (zh) 2002-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee