DE69328932T2 - Integrated active clamping structure for the protection of power semiconductor components against overvoltages - Google Patents

Integrated active clamping structure for the protection of power semiconductor components against overvoltages

Info

Publication number
DE69328932T2
DE69328932T2 DE69328932T DE69328932T DE69328932T2 DE 69328932 T2 DE69328932 T2 DE 69328932T2 DE 69328932 T DE69328932 T DE 69328932T DE 69328932 T DE69328932 T DE 69328932T DE 69328932 T2 DE69328932 T2 DE 69328932T2
Authority
DE
Germany
Prior art keywords
protection
power semiconductor
clamping structure
semiconductor components
active clamping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69328932T
Other languages
German (de)
Other versions
DE69328932D1 (en
Inventor
Piero Giorgio Fallica
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69328932D1 publication Critical patent/DE69328932D1/en
Publication of DE69328932T2 publication Critical patent/DE69328932T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69328932T 1993-12-13 1993-12-13 Integrated active clamping structure for the protection of power semiconductor components against overvoltages Expired - Fee Related DE69328932T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830497A EP0657933B1 (en) 1993-12-13 1993-12-13 Integrated structure active clamp for the protection of power semiconductor devices against overvoltages

Publications (2)

Publication Number Publication Date
DE69328932D1 DE69328932D1 (en) 2000-08-03
DE69328932T2 true DE69328932T2 (en) 2000-12-14

Family

ID=8215274

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328932T Expired - Fee Related DE69328932T2 (en) 1993-12-13 1993-12-13 Integrated active clamping structure for the protection of power semiconductor components against overvoltages

Country Status (4)

Country Link
US (1) US5530271A (en)
EP (1) EP0657933B1 (en)
JP (1) JP2680788B2 (en)
DE (1) DE69328932T2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098075A (en) * 1995-06-23 1997-01-10 Toshiba Corp Semiconductor device
US5789951A (en) * 1997-01-31 1998-08-04 Motorola, Inc. Monolithic clamping circuit and method of preventing transistor avalanche breakdown
US6005438A (en) * 1997-12-10 1999-12-21 National Semiconductor Corporation Output high voltage clamped circuit for low voltage differential swing applications in the case of overload
JP3911566B2 (en) * 1998-01-27 2007-05-09 富士電機デバイステクノロジー株式会社 MOS type semiconductor device
DE19919140B4 (en) 1998-04-29 2011-03-31 National Semiconductor Corp.(N.D.Ges.D.Staates Delaware), Santa Clara Low voltage differential signal driver with preamplifier circuit
US6111431A (en) * 1998-05-14 2000-08-29 National Semiconductor Corporation LVDS driver for backplane applications
US6833590B2 (en) * 2001-01-11 2004-12-21 Renesas Technology Corp. Semiconductor device
GB2413699B (en) * 2004-04-29 2006-02-15 Lite On Semiconductor Corp Overvoltage protection device and manufacturing process for the same
JP4620387B2 (en) * 2004-06-15 2011-01-26 ルネサスエレクトロニクス株式会社 Semiconductor protection device
US7342420B2 (en) * 2004-09-24 2008-03-11 Integrated Device Technology, Inc. Low power output driver
US7636005B2 (en) * 2007-09-07 2009-12-22 International Rectifier Corporation Active clamp for semiconductor device
US8665007B2 (en) * 2011-06-10 2014-03-04 Cypress Semiconductor Corporation Dynamic power clamp for RFID power control
US20130240894A1 (en) * 2012-03-13 2013-09-19 Hans Joachim Würfl Overvoltage Protection Device for Compound Semiconductor Field Effect Transistors
US9379541B2 (en) 2013-09-26 2016-06-28 Globalfoundries Inc. EOS protection circuit with FET-based trigger diodes
US9093568B1 (en) * 2014-04-16 2015-07-28 Infineon Technologies Ag Semiconductor diode

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
EP0102696B1 (en) * 1982-06-30 1989-09-13 Kabushiki Kaisha Toshiba Dynamic semiconductor memory and manufacturing method thereof
US4736271A (en) * 1987-06-23 1988-04-05 Signetics Corporation Protection device utilizing one or more subsurface diodes and associated method of manufacture
JPH0642557B2 (en) * 1987-12-14 1994-06-01 日本電気株式会社 Semiconductor device having electrostatic protection diode
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
JPH02230774A (en) * 1989-03-03 1990-09-13 Fujitsu Ltd Insulated gate type semiconductor device
JPH0465878A (en) * 1990-07-06 1992-03-02 Fuji Electric Co Ltd Semiconductor device
JPH04291767A (en) * 1991-03-20 1992-10-15 Fuji Electric Co Ltd Conductivity modulation mosfet
DE69326543T2 (en) * 1993-04-28 2000-01-05 Cons Ric Microelettronica Monolithically integrated structure of an electronic device with a certain unidirectional conduction threshold voltage

Also Published As

Publication number Publication date
EP0657933B1 (en) 2000-06-28
DE69328932D1 (en) 2000-08-03
EP0657933A1 (en) 1995-06-14
JPH07202199A (en) 1995-08-04
JP2680788B2 (en) 1997-11-19
US5530271A (en) 1996-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee