DE69125990D1 - Arrangement with quantum interference effect and corresponding method for the treatment of electron waves - Google Patents

Arrangement with quantum interference effect and corresponding method for the treatment of electron waves

Info

Publication number
DE69125990D1
DE69125990D1 DE69125990T DE69125990T DE69125990D1 DE 69125990 D1 DE69125990 D1 DE 69125990D1 DE 69125990 T DE69125990 T DE 69125990T DE 69125990 T DE69125990 T DE 69125990T DE 69125990 D1 DE69125990 D1 DE 69125990D1
Authority
DE
Germany
Prior art keywords
arrangement
treatment
corresponding method
interference effect
quantum interference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125990T
Other languages
German (de)
Other versions
DE69125990T2 (en
Inventor
Kazuhito Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69125990D1 publication Critical patent/DE69125990D1/en
Publication of DE69125990T2 publication Critical patent/DE69125990T2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69125990T 1990-09-12 1991-09-11 Arrangement with quantum interference effect and corresponding method for the treatment of electron waves Expired - Fee Related DE69125990T2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24162590 1990-09-12

Publications (2)

Publication Number Publication Date
DE69125990D1 true DE69125990D1 (en) 1997-06-12
DE69125990T2 DE69125990T2 (en) 1997-11-27

Family

ID=17077108

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125990T Expired - Fee Related DE69125990T2 (en) 1990-09-12 1991-09-11 Arrangement with quantum interference effect and corresponding method for the treatment of electron waves

Country Status (3)

Country Link
US (1) US5157467A (en)
EP (1) EP0475396B1 (en)
DE (1) DE69125990T2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0475403B1 (en) * 1990-09-13 1997-01-08 Canon Kabushiki Kaisha Quantum interference devices and methods for processing interference current
CN1119358A (en) * 1991-05-15 1996-03-27 明尼苏达州采矿制造公司 Blue-green laser diode
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
JP2701633B2 (en) * 1991-12-09 1998-01-21 日本電気株式会社 Semiconductor device
US5321253A (en) * 1991-12-31 1994-06-14 Biota Corp. Method of and means for controlling the electromagnetic output power of electro-optic semiconductor devices
US5309003A (en) * 1992-02-28 1994-05-03 At&T Bell Laboratories Article comprising a real space transfer semiconductor device, and method of making the article
US5453627A (en) * 1992-05-14 1995-09-26 Nippon Telegraph And Telephone Corporation Quantum interference device and complementary logic circuit utilizing thereof
JPH06151821A (en) * 1992-11-11 1994-05-31 Sony Corp Quantum interference semiconductor device
US5908306A (en) * 1993-01-29 1999-06-01 Sony Corporation Method for making a semiconductor device exploiting a quantum interferences effect
US5323030A (en) * 1993-09-24 1994-06-21 The United States Of America As Represented By The Secretary Of The Army Field effect real space transistor
US5459604A (en) * 1994-07-22 1995-10-17 National Research Council Of Canada Coherent switch of currents in semiconductors
JP4789321B2 (en) * 2000-12-27 2011-10-12 キヤノン株式会社 Wireless communication system, access control apparatus, wireless communication apparatus, control method of wireless communication system, control method of access control apparatus, and control method of wireless communication apparatus
JP4273517B2 (en) * 2003-03-25 2009-06-03 横河電機株式会社 Integrated circuit
JP4574197B2 (en) * 2004-03-16 2010-11-04 キヤノン株式会社 Data processing method, program, and apparatus
JP5279296B2 (en) * 2008-02-22 2013-09-04 キヤノン株式会社 COMMUNICATION DEVICE, COMMUNICATION METHOD, PROGRAM, AND STORAGE MEDIUM
CN108346740B (en) * 2018-01-23 2021-04-27 湖北工业大学 Quantum interference transistor based on self-excitation single-electron spin electromagnetic transistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393161A (en) * 1986-10-07 1988-04-23 Mitsubishi Electric Corp Semiconductor switching element
US4882608A (en) * 1987-02-09 1989-11-21 International Business Machines Corporation Multilayer semiconductor device having multiple paths of current flow
JPH07101755B2 (en) * 1987-11-16 1995-11-01 三菱電機株式会社 Semiconductor light receiving element
US4912451A (en) * 1988-03-28 1990-03-27 Nippon Soken, Inc. Heterojunction magnetic field sensor
JPH0226077A (en) * 1988-07-15 1990-01-29 Fujitsu Ltd Semiconductor functional device
US5130766A (en) * 1988-08-04 1992-07-14 Fujitsu Limited Quantum interference type semiconductor device

Also Published As

Publication number Publication date
EP0475396A2 (en) 1992-03-18
DE69125990T2 (en) 1997-11-27
US5157467A (en) 1992-10-20
EP0475396B1 (en) 1997-05-07
EP0475396A3 (en) 1994-04-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee