DE69106612D1 - Verfahren und Einrichtung zur Ablagerung von Antireflektionsschichten und zur Kontrolle ihrer Dicke. - Google Patents
Verfahren und Einrichtung zur Ablagerung von Antireflektionsschichten und zur Kontrolle ihrer Dicke.Info
- Publication number
- DE69106612D1 DE69106612D1 DE69106612T DE69106612T DE69106612D1 DE 69106612 D1 DE69106612 D1 DE 69106612D1 DE 69106612 T DE69106612 T DE 69106612T DE 69106612 T DE69106612 T DE 69106612T DE 69106612 D1 DE69106612 D1 DE 69106612D1
- Authority
- DE
- Germany
- Prior art keywords
- thickness
- controlling
- reflective layers
- depositing anti
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003667 anti-reflective effect Effects 0.000 title 1
- 238000000151 deposition Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9008947A FR2664710B1 (fr) | 1990-07-13 | 1990-07-13 | Procede et installation de depot de couches antireflet et de controle de leur epaisseur. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69106612D1 true DE69106612D1 (de) | 1995-02-23 |
DE69106612T2 DE69106612T2 (de) | 1995-07-27 |
Family
ID=9398688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69106612T Expired - Fee Related DE69106612T2 (de) | 1990-07-13 | 1991-07-11 | Verfahren und Einrichtung zur Ablagerung von Antireflektionsschichten und zur Kontrolle ihrer Dicke. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5221636A (de) |
EP (1) | EP0466598B1 (de) |
JP (1) | JPH0730201A (de) |
DE (1) | DE69106612T2 (de) |
FR (1) | FR2664710B1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2837677B2 (ja) * | 1987-11-05 | 1998-12-16 | 三井化学株式会社 | 射出成形品 |
JP2674807B2 (ja) * | 1987-11-05 | 1997-11-12 | 三井石油化学工業株式会社 | 摺動材 |
FR2694457B1 (fr) * | 1992-07-31 | 1994-09-30 | Chebbi Brahim | Laser à semi-conducteur pour la détection d'un rayonnement lumineux, procédé pour l'obtention d'un détecteur photosensible, et application d'un tel laser à la détection d'un rayonnement lumineux. |
US5911856A (en) * | 1993-09-03 | 1999-06-15 | Canon Kabushiki Kaisha | Method for forming thin film |
JPH08220304A (ja) | 1995-02-13 | 1996-08-30 | Tadahiro Omi | 光学物品及びそれを用いた露光装置又は光学系並びにその製造方法 |
DE19812562A1 (de) * | 1998-03-21 | 1999-09-23 | Joachim Sacher | Beschichtungs-Verfahren und -Vorrichtung |
US6485565B1 (en) | 1998-05-28 | 2002-11-26 | The Regents Of The University Of California | Process and apparatus for making oriented crystal layers |
US6132805A (en) * | 1998-10-20 | 2000-10-17 | Cvc Products, Inc. | Shutter for thin-film processing equipment |
US20030015139A1 (en) * | 2001-07-17 | 2003-01-23 | 3M Innovative Properties Company | Protective packaging |
US7824730B2 (en) * | 2007-08-31 | 2010-11-02 | United Technologies Corporation | Method and apparatus for measuring coating thickness with a laser |
RU2466207C2 (ru) * | 2010-12-23 | 2012-11-10 | Государственное образовательное учреждение высшего профессионального образования "Тамбовский государственный технический университет" ГОУ ВПО ТГТУ | Способ синтеза наноструктурной пленки на изделии и устройство для его реализации |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3846165A (en) * | 1972-08-21 | 1974-11-05 | Rca Corp | Method of applying an anti-reflective coating on a semiconductor laser |
US4563368A (en) * | 1983-02-14 | 1986-01-07 | Xerox Corporation | Passivation for surfaces and interfaces of semiconductor laser facets or the like |
US4843031A (en) * | 1987-03-17 | 1989-06-27 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating compound semiconductor laser using selective irradiation |
-
1990
- 1990-07-13 FR FR9008947A patent/FR2664710B1/fr not_active Expired - Fee Related
-
1991
- 1991-07-11 DE DE69106612T patent/DE69106612T2/de not_active Expired - Fee Related
- 1991-07-11 EP EP91401941A patent/EP0466598B1/de not_active Expired - Lifetime
- 1991-07-12 US US07/729,435 patent/US5221636A/en not_active Expired - Fee Related
- 1991-07-12 JP JP3198879A patent/JPH0730201A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2664710B1 (fr) | 1993-06-18 |
JPH0730201A (ja) | 1995-01-31 |
DE69106612T2 (de) | 1995-07-27 |
EP0466598A1 (de) | 1992-01-15 |
EP0466598B1 (de) | 1995-01-11 |
US5221636A (en) | 1993-06-22 |
FR2664710A1 (fr) | 1992-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |