DE69006823T2 - Borquelle für Molekularstrahlepitaxie. - Google Patents

Borquelle für Molekularstrahlepitaxie.

Info

Publication number
DE69006823T2
DE69006823T2 DE69006823T DE69006823T DE69006823T2 DE 69006823 T2 DE69006823 T2 DE 69006823T2 DE 69006823 T DE69006823 T DE 69006823T DE 69006823 T DE69006823 T DE 69006823T DE 69006823 T2 DE69006823 T2 DE 69006823T2
Authority
DE
Germany
Prior art keywords
molecular beam
beam epitaxy
boron source
boron
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69006823T
Other languages
English (en)
Other versions
DE69006823D1 (de
Inventor
Sylvain Laurent Delage
Bruce Allen Ek
Subramanian Sirkanteswara Iyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69006823D1 publication Critical patent/DE69006823D1/de
Application granted granted Critical
Publication of DE69006823T2 publication Critical patent/DE69006823T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69006823T 1989-10-10 1990-06-13 Borquelle für Molekularstrahlepitaxie. Expired - Fee Related DE69006823T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41918889A 1989-10-10 1989-10-10

Publications (2)

Publication Number Publication Date
DE69006823D1 DE69006823D1 (de) 1994-03-31
DE69006823T2 true DE69006823T2 (de) 1994-08-11

Family

ID=23661178

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69006823T Expired - Fee Related DE69006823T2 (de) 1989-10-10 1990-06-13 Borquelle für Molekularstrahlepitaxie.

Country Status (4)

Country Link
US (1) US5135887A (de)
EP (1) EP0427910B1 (de)
JP (1) JPH03135013A (de)
DE (1) DE69006823T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763320A (en) * 1995-12-11 1998-06-09 Stevens; Gary Don Boron doping a semiconductor particle
US6059876A (en) * 1997-02-06 2000-05-09 William H. Robinson Method and apparatus for growing crystals
US6740158B2 (en) * 2002-05-09 2004-05-25 Rwe Schott Solar Inc. Process for coating silicon shot with dopant for addition of dopant in crystal growth
CN111415858A (zh) * 2020-03-12 2020-07-14 中国科学院长春光学精密机械与物理研究所 AlN或AlGaN薄膜材料的制备方法及应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765940A (en) * 1971-11-08 1973-10-16 Texas Instruments Inc Vacuum evaporated thin film resistors
US3949119A (en) * 1972-05-04 1976-04-06 Atomic Energy Of Canada Limited Method of gas doping of vacuum evaporated epitaxial silicon films
SU451778A1 (ru) * 1973-07-26 1974-11-30 Институт Металлургии Ан Гсср Сплав дл раскислени ,легировани и модифицировани стали
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
US4392453A (en) * 1981-08-26 1983-07-12 Varian Associates, Inc. Molecular beam converters for vacuum coating systems
US4775425A (en) * 1987-07-27 1988-10-04 Energy Conversion Devices, Inc. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same

Also Published As

Publication number Publication date
US5135887A (en) 1992-08-04
EP0427910B1 (de) 1994-02-23
JPH03135013A (ja) 1991-06-10
DE69006823D1 (de) 1994-03-31
EP0427910A1 (de) 1991-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee