DE68909491D1 - Verfahren zur herstellung von diamantkristall. - Google Patents

Verfahren zur herstellung von diamantkristall.

Info

Publication number
DE68909491D1
DE68909491D1 DE89107219T DE68909491T DE68909491D1 DE 68909491 D1 DE68909491 D1 DE 68909491D1 DE 89107219 T DE89107219 T DE 89107219T DE 68909491 T DE68909491 T DE 68909491T DE 68909491 D1 DE68909491 D1 DE 68909491D1
Authority
DE
Germany
Prior art keywords
diamond crystal
producing diamond
producing
crystal
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89107219T
Other languages
English (en)
Other versions
DE68909491T2 (de
Inventor
Steven Marc Gasworth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE68909491D1 publication Critical patent/DE68909491D1/de
Application granted granted Critical
Publication of DE68909491T2 publication Critical patent/DE68909491T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE89107219T 1988-05-26 1989-04-21 Verfahren zur Herstellung von Diamantkristall. Expired - Fee Related DE68909491T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19896688A 1988-05-26 1988-05-26

Publications (2)

Publication Number Publication Date
DE68909491D1 true DE68909491D1 (de) 1993-11-04
DE68909491T2 DE68909491T2 (de) 1994-05-05

Family

ID=22735641

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89107219T Expired - Fee Related DE68909491T2 (de) 1988-05-26 1989-04-21 Verfahren zur Herstellung von Diamantkristall.

Country Status (4)

Country Link
EP (1) EP0343381B1 (de)
JP (1) JPH0226896A (de)
CA (1) CA1318226C (de)
DE (1) DE68909491T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7354850B2 (en) * 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
JP5822259B2 (ja) * 2011-06-16 2015-11-24 国立研究開発法人物質・材料研究機構 ダイヤモンド結晶成長方法及びダイヤモンド結晶成長装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS60221395A (ja) * 1984-04-19 1985-11-06 Yoshio Imai ダイヤモンド薄膜の製造方法

Also Published As

Publication number Publication date
EP0343381A1 (de) 1989-11-29
EP0343381B1 (de) 1993-09-29
CA1318226C (en) 1993-05-25
JPH0226896A (ja) 1990-01-29
DE68909491T2 (de) 1994-05-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee