DE68909043D1 - Vorrichtung für die zuführung von quecksilber auf gleichbleibender höhe in eine verdampfungszelle für epitaxie. - Google Patents

Vorrichtung für die zuführung von quecksilber auf gleichbleibender höhe in eine verdampfungszelle für epitaxie.

Info

Publication number
DE68909043D1
DE68909043D1 DE89905130T DE68909043T DE68909043D1 DE 68909043 D1 DE68909043 D1 DE 68909043D1 DE 89905130 T DE89905130 T DE 89905130T DE 68909043 T DE68909043 T DE 68909043T DE 68909043 D1 DE68909043 D1 DE 68909043D1
Authority
DE
Germany
Prior art keywords
epitaxy
constant height
evaporation cell
supplying mercury
mercury
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE89905130T
Other languages
English (en)
Other versions
DE68909043T2 (de
Inventor
Andre Barski
Pierre Bouchaib
Michel Herbin
Christian Lansade
Alain Leclerc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Riber SA
Original Assignee
Riber SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Riber SA filed Critical Riber SA
Publication of DE68909043D1 publication Critical patent/DE68909043D1/de
Application granted granted Critical
Publication of DE68909043T2 publication Critical patent/DE68909043T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE89905130T 1988-04-15 1989-04-14 Vorrichtung für die zuführung von quecksilber auf gleichbleibender höhe in eine verdampfungszelle für epitaxie. Expired - Lifetime DE68909043T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8805044A FR2630259B1 (fr) 1988-04-15 1988-04-15 Dispositif d'evaporation du mercure sous vide a un niveau constant pour cellule destinee a la croissance epitaxiale de semi-conducteurs
PCT/FR1989/000171 WO1989009847A1 (fr) 1988-04-15 1989-04-14 Dispositif d'alimentation a niveau constant d'une cellule d'evaporation de mercure pour epitaxie

Publications (2)

Publication Number Publication Date
DE68909043D1 true DE68909043D1 (de) 1993-10-14
DE68909043T2 DE68909043T2 (de) 1994-03-17

Family

ID=9365362

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89905130T Expired - Lifetime DE68909043T2 (de) 1988-04-15 1989-04-14 Vorrichtung für die zuführung von quecksilber auf gleichbleibender höhe in eine verdampfungszelle für epitaxie.

Country Status (5)

Country Link
EP (1) EP0409897B1 (de)
JP (1) JPH03503880A (de)
DE (1) DE68909043T2 (de)
FR (1) FR2630259B1 (de)
WO (1) WO1989009847A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5944895A (en) * 1997-03-03 1999-08-31 Mitsuboshi Belting Ltd. Processing liquid application system for use in an apparatus for treating a cord for use in a power transmission belt

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE892023C (de) * 1953-08-20 Robert Bosch G.m. b.H., Stuttgart Vorrichtung zur Erzielung gleichmaßiger Verdampfung von Flüssigkeiten im Vakuum, insbesondere für die Fertigung von Metall 'Papier-Kondensatoren od. dgl
FR2562099B1 (fr) * 1984-03-30 1986-06-20 Commissariat Energie Atomique Cellule d'evaporation d'un compose liquide adaptee a l'epitaxie par jets moleculaires
FR2568545B1 (fr) * 1984-07-31 1987-01-09 Instruments Sa Distributeur de materiau liquide, destine en particulier a remplir un recipient sous vide
FR2568662B1 (fr) * 1984-07-31 1987-02-27 Instruments Sa Dispositif pour isoler temporairement un objet d'une enceinte a vide.

Also Published As

Publication number Publication date
FR2630259A1 (fr) 1989-10-20
FR2630259B1 (fr) 1991-05-03
EP0409897A1 (de) 1991-01-30
DE68909043T2 (de) 1994-03-17
WO1989009847A1 (fr) 1989-10-19
JPH03503880A (ja) 1991-08-29
EP0409897B1 (de) 1993-09-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition