DE60301060D1 - CELL - Google Patents
CELLInfo
- Publication number
- DE60301060D1 DE60301060D1 DE60301060T DE60301060T DE60301060D1 DE 60301060 D1 DE60301060 D1 DE 60301060D1 DE 60301060 T DE60301060 T DE 60301060T DE 60301060 T DE60301060 T DE 60301060T DE 60301060 D1 DE60301060 D1 DE 60301060D1
- Authority
- DE
- Germany
- Prior art keywords
- polymeric
- cell
- memory material
- memory
- ferroelectret
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 abstract 4
- 239000002131 composite material Substances 0.000 abstract 1
- 239000002322 conducting polymer Substances 0.000 abstract 1
- 229920001940 conductive polymer Polymers 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Laminated Bodies (AREA)
- Eye Examination Apparatus (AREA)
- Medicinal Preparation (AREA)
- External Artificial Organs (AREA)
Abstract
In a ferroelectret or electret memory cell a polymeric memory material is a blend of two or more polymeric materials, the polymeric material being provided contacting first and second electrodes. Each electrode is a composite multilayer having a first highly conducting layer and a conducting polymer layer, the latter forming a contact between the former and the memory material.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20021057 | 2002-03-01 | ||
NO20021057A NO315399B1 (en) | 2002-03-01 | 2002-03-01 | memory cell |
PCT/NO2003/000052 WO2003075279A1 (en) | 2002-03-01 | 2003-02-11 | A memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60301060D1 true DE60301060D1 (en) | 2005-08-25 |
DE60301060T2 DE60301060T2 (en) | 2006-06-01 |
Family
ID=19913385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60301060T Expired - Fee Related DE60301060T2 (en) | 2002-03-01 | 2003-02-11 | CELL |
Country Status (10)
Country | Link |
---|---|
US (1) | US7126176B2 (en) |
EP (1) | EP1481398B1 (en) |
JP (1) | JP4054311B2 (en) |
AT (1) | ATE300087T1 (en) |
AU (1) | AU2003208672A1 (en) |
DE (1) | DE60301060T2 (en) |
DK (1) | DK1481398T3 (en) |
ES (1) | ES2246042T3 (en) |
NO (1) | NO315399B1 (en) |
WO (1) | WO2003075279A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6920060B2 (en) | 2002-08-14 | 2005-07-19 | Intel Corporation | Memory device, circuits and methods for operating a memory device |
EP1700309B1 (en) * | 2003-12-22 | 2007-05-09 | Koninklijke Philips Electronics N.V. | Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device |
US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
NO20041733L (en) * | 2004-04-28 | 2005-10-31 | Thin Film Electronics Asa | Organic electronic circuit with functional interlayer and process for its manufacture. |
DE102004057790A1 (en) * | 2004-11-30 | 2006-06-08 | Infineon Technologies Ag | Non-volatile memory cell, useful in e.g. digital cameras, comprises a substrate, two electrodes, an active layer (self-organized mono layer of organic compound) between the electrodes and a carbon-containing layer arranged on the compound |
SG157268A1 (en) * | 2008-05-30 | 2009-12-29 | Sony Corp | Ferroelectric polymer |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3602887A1 (en) | 1986-01-31 | 1987-08-06 | Bayer Ag | NON-VOLATILE ELECTRONIC MEMORY |
US5270967A (en) * | 1991-01-16 | 1993-12-14 | National Semiconductor Corporation | Refreshing ferroelectric capacitors |
JPH1022470A (en) | 1996-07-02 | 1998-01-23 | Hitachi Ltd | Semiconductor memory device and manufacture thereof |
NO972803D0 (en) | 1997-06-17 | 1997-06-17 | Opticom As | Electrically addressable logic device, method of electrically addressing the same and use of device and method |
NO309500B1 (en) | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelectric data processing apparatus, methods for its preparation and readout, and use thereof |
JP2000068465A (en) * | 1998-08-21 | 2000-03-03 | Nec Corp | Semiconductor device and method for forming the same |
NO312699B1 (en) | 2000-07-07 | 2002-06-17 | Thin Film Electronics Asa | Addressing memory matrix |
NO20005980L (en) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelectric memory circuit and method of its manufacture |
NO314524B1 (en) * | 2001-11-30 | 2003-03-31 | Thin Film Electronics Asa | Method of reading cells in a passive matrix addressable device, and device for carrying out the method |
-
2002
- 2002-03-01 NO NO20021057A patent/NO315399B1/en unknown
-
2003
- 2003-02-11 ES ES03707258T patent/ES2246042T3/en not_active Expired - Lifetime
- 2003-02-11 WO PCT/NO2003/000052 patent/WO2003075279A1/en active IP Right Grant
- 2003-02-11 AT AT03707258T patent/ATE300087T1/en not_active IP Right Cessation
- 2003-02-11 DK DK03707258T patent/DK1481398T3/en active
- 2003-02-11 DE DE60301060T patent/DE60301060T2/en not_active Expired - Fee Related
- 2003-02-11 AU AU2003208672A patent/AU2003208672A1/en not_active Abandoned
- 2003-02-11 EP EP03707258A patent/EP1481398B1/en not_active Expired - Lifetime
- 2003-02-11 JP JP2003573646A patent/JP4054311B2/en not_active Expired - Fee Related
- 2003-02-11 US US10/504,860 patent/US7126176B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
AU2003208672A1 (en) | 2003-09-16 |
NO20021057D0 (en) | 2002-03-01 |
DK1481398T3 (en) | 2005-10-31 |
NO20021057A (en) | 2003-08-25 |
JP4054311B2 (en) | 2008-02-27 |
WO2003075279A1 (en) | 2003-09-12 |
DE60301060T2 (en) | 2006-06-01 |
EP1481398A1 (en) | 2004-12-01 |
ATE300087T1 (en) | 2005-08-15 |
US7126176B2 (en) | 2006-10-24 |
EP1481398B1 (en) | 2005-07-20 |
ES2246042T3 (en) | 2006-02-01 |
US20050151176A1 (en) | 2005-07-14 |
NO315399B1 (en) | 2003-08-25 |
JP2005519463A (en) | 2005-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |