DE60235721D1 - METHOD FOR FORMING A FLAT DIGIT STRUCTURE WITH IMPROVED ROOTING OF THE GRAY CEILINGS - Google Patents

METHOD FOR FORMING A FLAT DIGIT STRUCTURE WITH IMPROVED ROOTING OF THE GRAY CEILINGS

Info

Publication number
DE60235721D1
DE60235721D1 DE60235721T DE60235721T DE60235721D1 DE 60235721 D1 DE60235721 D1 DE 60235721D1 DE 60235721 T DE60235721 T DE 60235721T DE 60235721 T DE60235721 T DE 60235721T DE 60235721 D1 DE60235721 D1 DE 60235721D1
Authority
DE
Germany
Prior art keywords
ceilings
gray
flat
forming
digit structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60235721T
Other languages
German (de)
Inventor
Unsoon Kim
Yu Sun
Hiroyuki Kinoshita
Kuo-Tung Chang
Harpreet K Sachar
Mark S Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/277,395 external-priority patent/US7439141B2/en
Application filed by Spansion LLC filed Critical Spansion LLC
Application granted granted Critical
Publication of DE60235721D1 publication Critical patent/DE60235721D1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H01L21/76235Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
DE60235721T 2001-12-27 2002-12-11 METHOD FOR FORMING A FLAT DIGIT STRUCTURE WITH IMPROVED ROOTING OF THE GRAY CEILINGS Expired - Lifetime DE60235721D1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3263101A 2001-12-27 2001-12-27
US10/277,395 US7439141B2 (en) 2001-12-27 2002-10-22 Shallow trench isolation approach for improved STI corner rounding
PCT/US2002/039739 WO2003058709A2 (en) 2001-12-27 2002-12-11 Method for forming a shallow trench isolation structure with improved corner rounding

Publications (1)

Publication Number Publication Date
DE60235721D1 true DE60235721D1 (en) 2010-04-29

Family

ID=28038612

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60235721T Expired - Lifetime DE60235721D1 (en) 2001-12-27 2002-12-11 METHOD FOR FORMING A FLAT DIGIT STRUCTURE WITH IMPROVED ROOTING OF THE GRAY CEILINGS

Country Status (1)

Country Link
DE (1) DE60235721D1 (en)

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Legal Events

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