DE602005000942D1 - Electron emission device - Google Patents
Electron emission deviceInfo
- Publication number
- DE602005000942D1 DE602005000942D1 DE602005000942T DE602005000942T DE602005000942D1 DE 602005000942 D1 DE602005000942 D1 DE 602005000942D1 DE 602005000942 T DE602005000942 T DE 602005000942T DE 602005000942 T DE602005000942 T DE 602005000942T DE 602005000942 D1 DE602005000942 D1 DE 602005000942D1
- Authority
- DE
- Germany
- Prior art keywords
- electron emission
- electrodes
- emission device
- plane
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
Abstract
An electron emission device includes gate electrodes (6) formed on a substrate (2). The gate electrodes are located on a first plane. An insulating layer (8) is formed on the gate electrodes. Cathode electrodes (10) are formed on the insulating layer. Electron emission regions (12) are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes (18) placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1( mu m)≤D≤28.1553+1.7060t( mu m), where t indicates a thickness of the insulating layer. <IMAGE>
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040012953A KR20050087241A (en) | 2004-02-26 | 2004-02-26 | Electron emission display device |
KR2004012953 | 2004-02-26 | ||
KR1020040086671A KR20060037650A (en) | 2004-10-28 | 2004-10-28 | Electron emission device |
KR2004086671 | 2004-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602005000942D1 true DE602005000942D1 (en) | 2007-06-06 |
DE602005000942T2 DE602005000942T2 (en) | 2008-02-14 |
Family
ID=34752262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005000942T Active DE602005000942T2 (en) | 2004-02-26 | 2005-02-24 | Electron emission device |
Country Status (6)
Country | Link |
---|---|
US (1) | US7279830B2 (en) |
EP (1) | EP1569258B1 (en) |
JP (1) | JP2005243648A (en) |
CN (1) | CN100342472C (en) |
AT (1) | ATE360882T1 (en) |
DE (1) | DE602005000942T2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100908712B1 (en) * | 2003-01-14 | 2009-07-22 | 삼성에스디아이 주식회사 | Field emission display with emitter array structure to improve electron emission characteristics |
KR20050096536A (en) * | 2004-03-31 | 2005-10-06 | 삼성에스디아이 주식회사 | Electron emission display with grid electrode |
KR20060095320A (en) * | 2005-02-28 | 2006-08-31 | 삼성에스디아이 주식회사 | Electron emission device |
US20060220163A1 (en) * | 2005-03-31 | 2006-10-05 | Shih-Yuan Wang | Light sources that use diamond nanowires |
KR20070046670A (en) * | 2005-10-31 | 2007-05-03 | 삼성에스디아이 주식회사 | Electron emission device and electron emission display device having the same |
KR20070070649A (en) * | 2005-12-29 | 2007-07-04 | 삼성에스디아이 주식회사 | Electron emission device, back light unit having the same, flat display apparatus having the same, and method of driving electron emission device |
KR100838069B1 (en) * | 2006-09-11 | 2008-06-16 | 삼성에스디아이 주식회사 | Electron emission device, electron emission type backlight unit, and method of fabricating electron emission device |
KR20080034348A (en) * | 2006-10-16 | 2008-04-21 | 삼성에스디아이 주식회사 | Electron emission device |
JP2011082071A (en) * | 2009-10-08 | 2011-04-21 | Canon Inc | Electron-emitting device, electron beam apparatus and image display apparatus |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0935618A (en) * | 1995-07-20 | 1997-02-07 | Toshiba Corp | Electric field emission cold cathode with gate |
US5828288A (en) * | 1995-08-24 | 1998-10-27 | Fed Corporation | Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications |
DE19536197A1 (en) * | 1995-09-28 | 1997-04-03 | Siemens Ag | Cold cathode electron emission arrangement for e.g. vacuum fluorescent display or electron beam lithography |
US6262530B1 (en) * | 1997-02-25 | 2001-07-17 | Ivan V. Prein | Field emission devices with current stabilizer(s) |
JP2000208025A (en) * | 1999-01-11 | 2000-07-28 | Matsushita Electric Ind Co Ltd | Electron emitting element, electron emitting source, their manufacture, and image display device using them and its manufacture |
JP2000268704A (en) * | 1999-03-17 | 2000-09-29 | Futaba Corp | Field emission display element and its manufacture |
KR100343205B1 (en) * | 2000-04-26 | 2002-07-10 | 김순택 | Field emission array using carbon nanotube and fabricating method thereof |
US6621232B2 (en) | 2002-01-04 | 2003-09-16 | Samsung Sdi Co., Ltd. | Field emission display device having carbon-based emitter |
CN100407362C (en) * | 2002-04-12 | 2008-07-30 | 三星Sdi株式会社 | Field transmission display devices |
KR100852690B1 (en) * | 2002-04-22 | 2008-08-19 | 삼성에스디아이 주식회사 | Carbon nanotube emitter paste composition for field emission device and method of preparing carbon nanotube emitter using same |
-
2005
- 2005-02-24 EP EP05101406A patent/EP1569258B1/en not_active Not-in-force
- 2005-02-24 DE DE602005000942T patent/DE602005000942T2/en active Active
- 2005-02-24 AT AT05101406T patent/ATE360882T1/en not_active IP Right Cessation
- 2005-02-26 US US11/068,067 patent/US7279830B2/en not_active Expired - Fee Related
- 2005-02-28 JP JP2005054779A patent/JP2005243648A/en active Pending
- 2005-02-28 CN CNB2005100656399A patent/CN100342472C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7279830B2 (en) | 2007-10-09 |
US20050189870A1 (en) | 2005-09-01 |
EP1569258A2 (en) | 2005-08-31 |
EP1569258B1 (en) | 2007-04-25 |
JP2005243648A (en) | 2005-09-08 |
DE602005000942T2 (en) | 2008-02-14 |
CN1670885A (en) | 2005-09-21 |
EP1569258A3 (en) | 2005-09-07 |
CN100342472C (en) | 2007-10-10 |
ATE360882T1 (en) | 2007-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de | ||
8370 | Indication related to discontinuation of the patent is to be deleted | ||
8364 | No opposition during term of opposition |