DE602004018889D1 - Lichtquelle mit abstimmbaren Wellenlängen - Google Patents

Lichtquelle mit abstimmbaren Wellenlängen

Info

Publication number
DE602004018889D1
DE602004018889D1 DE602004018889T DE602004018889T DE602004018889D1 DE 602004018889 D1 DE602004018889 D1 DE 602004018889D1 DE 602004018889 T DE602004018889 T DE 602004018889T DE 602004018889 T DE602004018889 T DE 602004018889T DE 602004018889 D1 DE602004018889 D1 DE 602004018889D1
Authority
DE
Germany
Prior art keywords
light source
tunable wavelengths
tunable
wavelengths
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004018889T
Other languages
English (en)
Inventor
Shinji Mitsuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Publication of DE602004018889D1 publication Critical patent/DE602004018889D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127Lasers; Multiple laser arrays
    • G11B7/1275Two or more lasers having different wavelengths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42Arrays of surface emitting lasers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0065Recording, reproducing or erasing by using optical interference patterns, e.g. holograms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11Comprising a photonic bandgap structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054Methods of obtaining the confinement
    • H01S5/2081Methods of obtaining the confinement using special etching techniques
    • H01S5/2086Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Holo Graphy (AREA)
  • Lasers (AREA)
DE602004018889T 2003-11-17 2004-11-16 Lichtquelle mit abstimmbaren Wellenlängen Active DE602004018889D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003387054A JP2005150472A (ja) 2003-11-17 2003-11-17 波長可変光源及びその製造方法

Publications (1)

Publication Number Publication Date
DE602004018889D1 true DE602004018889D1 (de) 2009-02-26

Family

ID=34431527

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004018889T Active DE602004018889D1 (de) 2003-11-17 2004-11-16 Lichtquelle mit abstimmbaren Wellenlängen

Country Status (4)

Country Link
US (1) US20050105578A1 (de)
EP (1) EP1531466B1 (de)
JP (1) JP2005150472A (de)
DE (1) DE602004018889D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050275916A1 (en) * 2004-06-09 2005-12-15 Alps Electric Co., Ltd. Hologram device
JP4734037B2 (ja) 2005-06-07 2011-07-27 アルプス電気株式会社 ホログラム情報再生装置
JP4599234B2 (ja) * 2005-06-09 2010-12-15 アルプス電気株式会社 ホログラム型再生装置
US9304403B2 (en) * 2013-01-02 2016-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for lithography alignment
US10033158B1 (en) 2016-12-19 2018-07-24 Osram Opto Semiconductors Gmbh Semiconductor laser, laser assembly and method of making a semiconductor laser
US10333277B2 (en) * 2017-10-26 2019-06-25 Omnivision Technologies, Inc. Structure light module using vertical cavity surface emitting laser array
JP2020046308A (ja) * 2018-09-19 2020-03-26 ソニー株式会社 観察装置、観察方法及び観察システム
US20210168338A1 (en) * 2019-11-29 2021-06-03 Seiko Epson Corporation Light emitting apparatus and projector

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62147794A (ja) * 1985-12-20 1987-07-01 Mitsubishi Electric Corp 半導体レ−ザ装置
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
US5416616A (en) * 1990-04-06 1995-05-16 University Of Southern California Incoherent/coherent readout of double angularly multiplexed volume holographic optical elements
US5650612A (en) * 1995-01-11 1997-07-22 The Boeing Company Optical sensor using swept wavelength light source
US6195485B1 (en) * 1998-10-26 2001-02-27 The Regents Of The University Of California Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector
US6560262B1 (en) * 1999-01-26 2003-05-06 Triquint Technology Holding Co. Vertical cavity surface emitting laser array and a process for making same
US6055174A (en) * 1999-06-07 2000-04-25 Holoplex Inc. Solid state holographic memory
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
KR100727907B1 (ko) * 2000-07-20 2007-06-14 삼성전자주식회사 다중 파장 표면광 레이저 및 그 제조방법
JP2002056989A (ja) * 2000-08-11 2002-02-22 Seiko Epson Corp 発光装置
AU2001288727A1 (en) * 2000-09-01 2002-03-13 Photodigm Integrated grating-outcoupled surface-emitting lasers
US6829281B2 (en) * 2002-06-19 2004-12-07 Finisar Corporation Vertical cavity surface emitting laser using photonic crystals

Also Published As

Publication number Publication date
JP2005150472A (ja) 2005-06-09
EP1531466A3 (de) 2007-09-19
US20050105578A1 (en) 2005-05-19
EP1531466A2 (de) 2005-05-18
EP1531466B1 (de) 2009-01-07

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Legal Events

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